AP15N03GH/J-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low Gate Charge
D
▼ Simple Drive Requirement
▼ Fast Switching
30V
RDS(ON)
80mΩ
ID
G
▼ RoHS Compliant
BVDSS
15A
S
Description
TO-252 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP15N03GJ) is
available for low-profile applications.
G
G
D
D
S
TO-252(H)
S
TO-251(J)
Rating
Units
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
+20
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V
15
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V
9
A
50
A
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
26
W
Linear Derating Factor
0.21
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-c
Parameter
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
3
Value
Unit
4.8
℃/W
62.5
℃/W
110
℃/W
1
200811193
AP15N03GH/J-HF
Electrical Characteristics@T j=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
30
-
-
V
-
0.037
-
V/℃
VGS=10V, ID=8A
-
-
80
mΩ
VGS=4.5V, ID=6A
-
-
100
mΩ
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
VGS=0V, ID=250uA
Static Drain-Source On-Resistance
2
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=8A
-
7
-
S
IDSS
Drain-Source Leakage Current
VDS=30V, VGS=0V
`
-
1
uA
Drain-Source Leakage Current (Tj=150 C) VDS=24V, VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS=+20V
-
-
+100
nA
ID=8A
-
4.6
nC
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=24V
-
1.1
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=5V
-
3
nC
VDS=15V
-
4.9
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=8A
-
22.5
-
ns
td(off)
Turn-off Delay Time
RG=3.4Ω,VGS=10V
-
12.2
-
ns
tf
Fall Time
RD=1.9Ω
-
3.3
-
ns
Ciss
Input Capacitance
VGS=0V
-
160
-
pF
Coss
Output Capacitance
VDS=25V
-
107
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
32
-
pF
Min.
Typ.
-
-
15
A
-
-
50
A
-
-
1.3
V
Source-Drain Diode
Symbol
IS
ISM
VSD
Parameter
Test Conditions
VD=VG=0V , VS=1.3V
Continuous Source Current ( Body Diode )
1
Pulsed Source Current ( Body Diode )
Forward On Voltage
2
IS=15A, VGS=0V
Max. Units
Notes:
1.Pulse width limited by Maximum junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP15N03GH/J-HF
30
40
10V
8.0V
ID , Drain Current (A)
10V
8.0V
T C = 1 50 o C
ID , Drain Current (A)
o
T C = 25 C
30
6.0V
20
V G =4.0V
6.0V
20
10
V G =4.0V
10
0
0
0
1
2
3
4
5
0
6
1
Fig 1. Typical Output Characteristics
3
4
5
6
Fig 2. Typical Output Characteristics
2.0
90
I D =8A
I D =8A
V G =10V
T C =25 o C
Normalized RDS(ON)
80
RDS(ON) (mΩ)
2
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
70
60
1.6
1.2
0.8
50
40
0.4
2
4
6
8
-50
10
0
50
100
150
T j , Junction Temperature ( o C)
V GS Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2
12
10
1.8
o
T j =150 C
T j =25 C
VGS(th) (V)
8
IS (A)
o
6
1.6
1.4
4
1.2
2
0
1
0
0.4
0.8
1.2
V SD (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.6
-50
-25
0
25
50
75
100
125
150
T j , Junction Temperature( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP15N03GH/J-HF
f=1.0MHz
16
500
400
V DS =16V
V DS =20V
V DS =24V
12
C (pF)
VGS , Gate to Source Voltage (V)
I D =8A
8
300
200
C iss
4
C oss
100
C rss
0
0
0
2
4
6
8
1
10
5
9
13
17
21
25
29
V DS (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
Normalized Thermal Response (Rthjc)
1
100us
10
ID (A)
1ms
10ms
100ms
DC
1
o
T C =25 C
Single Pulse
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0.1
0.1
1
10
100
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4
ADVANCED POWER ELECTRONICS CORP.
Package Outline : TO-252
D
D1
E2
E3
B1
F1
e
Millimeters
SYMBOLS
E1
MIN
NOM
MAX
A2
1.80
2.30
2.80
A3
0.40
0.50
0.60
B1
0.40
0.70
1.00
D
6.00
6.50
7.00
D1
4.80
5.35
5.90
E3
3.50
4.00
4.50
F
2.20
2.63
3.05
F1
0.50
0.85
1.20
E1
5.10
5.70
6.30
E2
0.50
1.10
1.80
e
--
2.30
--
C
0.35
0.50
0.65
F
e
1.All Dimensions Are in Millimeters.
2.Dimension Does Not Include Mold Protrusions.
R : 0.127~0.381
A2
A3
(0.1mm
C
Part Marking Information & Packing : TO-252
Laser Marking
Part Number
15N03GH
Package Code
Meet Rohs requirement
for low voltage MOSFET only
LOGO
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
If last "S" is numerical letter : Rohs product
If last "S" is English letter : HF & Rohs product
5
ADVANCED POWER ELECTRONICS CORP.
Package Outline : TO-251
D
Millimeters
A
SYMBOLS
c1
D1
E2
E1
E
A1
B2
F
B1
c
e
MIN
NOM
MAX
A
2.20
2.30
2.40
A1
0.90
1.20
1.50
B1
0.40
0.60
0.80
B2
0.60
0.85
1.05
c
c1
0.40
0.50
0.60
0.40
0.50
0.60
D
6.40
6.60
6.80
D1
4.80
5.20
5.50
E
6.70
7.00
7.30
E1
5.40
5.60
5.80
E2
1.30
1.50
1.70
e
----
2.30
----
F
7.00
8.30
9.60
1.All Dimensions Are in Millimeters.
2.Dimension Does Not Include Mold Protrusions.
e
Part Marking Information & Packing : TO-251
Part Number
15N03GJ
YWWSSS
meet Rohs requirement
for low voltage MOSFET only
Package Code
LOGO
Date Code (YWWSSS)
Y ：Last Digit Of The Year
WW ：Week
SSS ：Sequence
If last "S" is numerical letter : Rohs product
If last "S" is English letter : HF & Rohs product
6