AD AD8072ARM Low cost, dual/triple video amplifier Datasheet

a
PIN CONFIGURATIONS
8-Lead Plastic (N), SOIC (R), and ␮SOIC (RM) Packages
Both will operate from a single 5 V to 12 V power supply. The
outputs of each amplifier swing to within 1.3 volts of either supply rail to accommodate video signals on a single 5 V supply.
The high bandwidth of 100 MHz, 500 V/µs of slew rate, along
with settling to 0.1% in 25 ns, make the AD8072 and AD8073
useful in many general purpose, high speed applications where a
single 5 V or dual power supplies up to ± 6 V are needed. The
AD8072 is available in 8-lead plastic DIP, SOIC, and µSOIC
packages while the AD8073 is available in 14-lead plastic DIP and
SOIC packages. Both operate over the commercial temperature
range of 0°C to 70°C. Additionally, the AD8072ARM operates
over the industrial temperature range of –40°C to +85°C.
+VS
7
OUT2
+IN1 3
6
–IN2
–VS 4
5
+IN2
AD8072
14-Lead Plastic (N), and SOIC (R) Packages
NC 1
14
OUT2
NC
2
13
–IN2
NC 3
12
+IN2
AD8073
+VS 4
TOP VIEW 11 –VS
(Not to Scale)
10 +IN3
+IN1 5
–IN1 6
9
–IN3
7
8
OUT3
OUT1
PRODUCT DESCRIPTION
NC = NO CONNECT
GAIN FLATNESS – dB
These devices provide 30 mA of output current per amplifier,
and are optimized for driving one back terminated video load
(150 Ω) each. These current feedback amplifiers feature gain
flatness of 0.1 dB to 10 MHz while offering differential gain and
phase error of 0.05% and 0.1°. This makes the AD8072 and
AD8073 ideal for business and consumer video electronics.
8
–IN1 2
TOP VIEW
(Not to Scale)
APPLICATIONS
Video Line Driver
Computer Video Plug-In Boards
RGB or S-Video Amplifier in Component Systems
The AD8072 (dual) and AD8073 (triple) are low cost, current
feedback amplifiers intended for high volume, cost sensitive
applications. In addition to being low cost, these amplifiers
deliver solid video performance into a 150 Ω load while consuming
only 3.5 mA per amplifier of supply current. Furthermore, the
AD8073 is three amplifiers in a single 14-lead narrow-body
SOIC package. This makes it ideal for applications where small
size is essential. Each amplifier’s inputs and output are accessible providing added gain setting flexibility.
OUT1 1
6.1
7
6.0
6
5.9
5
5.8
4
5.7
5.6
5.5
VS = ⴞ5V
VO = 2V p-p
RF = RG = 1k⍀
RL = 150⍀
AV = ⴙ2
3
1 dB
DIV
2
0.1 dB
DIV
1
0
5.4
5.3
0.1
CLOSED-LOOP GAIN – dB
FEATURES
Very Low Cost
Good Video Specifications (RL = 150 ⍀)
Gain Flatness of 0.1 dB to 10 MHz
0.05% Differential Gain Error
0.1ⴗ Differential Phase Error
Low Power
3.5 mA/Amplifier Supply Current
Operates on Single 5 V to 12 V Supply
High Speed
100 MHz, –3 dB Bandwidth (G = +2)
500 V/␮s Slew Rate
Fast Settling Time of 25 ns (0.1%)
Easy to Use
30 mA Output Current
Output Swing to 1.3 V of Rails on Single 5 V Supply
Low Cost, Dual/Triple
Video Amplifiers
AD8072/AD8073
1
10
FREQUENCY – MHz
100
–1
500
Figure 1. Large Signal Frequency Response
REV. D
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties that
may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Analog Devices.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700
www.analog.com
Fax: 781/326-8703
© Analog Devices, Inc., 2002
AD8072/AD8073–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS (@ T = 25ⴗC, V = ⴞ5 V, R = 150 ⍀, unless otherwise noted.)
A
S
L
Parameter
Conditions
Min
DYNAMIC PERFORMANCE
–3 dB Bandwidth, Small Signal
0.1 dB Bandwidth, Small Signal
Slew Rate
Settling Time to 0.1%
RF = 1 kΩ
No Peaking, G = +2
No Peaking, G = +2
VO = 4 V Step
VO = 2 V Step
DISTORTION/NOISE PERFORMANCE
Differential Gain
Differential Phase
Crosstalk
Input Voltage Noise
Input Current Noise
RF = 1 kΩ
f = 3.58 MHz, G = +2
f = 3.58 MHz, G = +2
f = 5 MHz
f = 10 kHz
f = 10 kHz (± IIN)
80
8
AD8072/AD8073
Typ
Max
100
10
500
25
0.05
0.1
60
3
6
DC PERFORMANCE
Transimpedance
Input Offset Voltage
0.3
2
TMIN to TMAX
Offset Drift
Input Bias Current (± )
Input Bias Current Drift (± )
INPUT CHARACTERISTICS
–Input Resistance
+Input Resistance
Input Capacitance
Common-Mode Rejection Ratio
Input Common-Mode Voltage Range
OUTPUT CHARACTERISTICS
+Output Voltage Swing
–Output Voltage Swing
Output Current
Short Circuit Current
POWER SUPPLY
Operating Range
Power Supply Rejection Ratio
Quiescent Current per Amplifier
11
4
12
VCM = –3.8 V to +3.8 V
3
2.25
RL = 10 Ω
VS = ± 4 V to ± 6 V
OPERATING TEMPERATURE RANGE
0
Unit
MHz
MHz
V/µs
ns
0.15
0.3
6
8
12
%
Degrees
dB
nV/√Hz
pA/√Hz
MΩ
mV
mV
µV/°C
µA
nA/°C
120
1
1.6
56
± 3.8
Ω
MΩ
pF
dB
V
3.3
3
30
80
V
V
mA
mA
± 2.5 to ± 6
70
3.5
5
V
dB
mA
70
°C
Specifications subject to change without notice.
–2–
REV. D
AD8072/AD8073
ELECTRICAL CHARACTERISTICS (@ T = 25ⴗC, V = 5 V, R = 150 ⍀ to 2.5 V, unless otherwise noted.)
A
S
L
Parameter
Conditions
Min
DYNAMIC PERFORMANCE
–3 dB Bandwidth, Small Signal
0.1 dB Bandwidth, Small Signal
Slew Rate
Settling Time to 0.1%
RF = 1 kΩ
No Peaking, G = +2
No Peaking, G = +2
VO = 2 V Step
VO = 2 V Step
DISTORTION/NOISE PERFORMANCE
Differential Gain
Differential Phase
Crosstalk
Input Voltage Noise
Input Current Noise
RF = 1 kΩ
f = 3.58 MHz, G = +2, RL to 1.5 V
f = 3.58 MHz, G = +2, RL to 1.5 V
f = 5 MHz
f = 10 kHz
f = 10 kHz (± IIN)
AD8072/AD8073
Typ
78
7.8
DC PERFORMANCE
Transimpedance
Input Offset Voltage
MHz
MHz
V/µs
ns
0.1
0.1
60
3
6
%
Degrees
dB
nV/√Hz
pA/√Hz
TMIN to TMAX
INPUT CHARACTERISTICS
–Input Resistance
+Input Resistance
Input Capacitance
Common-Mode Rejection Ratio
Input Common-Mode Voltage Range
OUTPUT CHARACTERISTICS
Output Voltage Swing
Output Voltage Swing
Output Current
Short Circuit Current
POWER SUPPLY
Operating Range
Power Supply Rejection Ratio
Quiescent Current per Amplifier
9
3
10
VCM = 1.2 V to 3.8 V
RL = 150 Ω
RL = 1 kΩ TMIN to TMAX
RL = 10 Ω
VS = 4 V to 6 V
OPERATING TEMPERATURE RANGE
0
Specifications subject to change without notice.
REV. D
1.5 to 3.5
1.3 to 3.7
–3–
Unit
100
10
350
25
0.25
1.5
Offset Drift
Input Bias Current (± )
Input Bias Current Drift (± )
Max
4
6
10
MΩ
mV
mV
µV/°C
µA
nA/°C
120
1
1.6
54
1.2 to 3.8
Ω
MΩ
pF
dB
V
1.3 to 3.7
1.1 to 3.9
20
60
V
V
mA
mA
± 2.5 to ± 6
64
3
4.5
V
dB
mA
70
°C
AD8072/AD8073
ABSOLUTE MAXIMUM RATINGS 1
MAXIMUM POWER DISSIPATION
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13.2 V
Internal Power Dissipation2
AD8072 8-Lead Plastic (N) . . . . . . . . . . . . . . . . . . 1.3 Watts
AD8072 8-Lead Small Outline (SO-8) . . . . . . . . . 0.9 Watts
AD8072 8-Lead µSOIC (RM) . . . . . . . . . . . . . . . . 0.6 Watts
AD8073 14-Lead Plastic (N) . . . . . . . . . . . . . . . . . 1.6 Watts
AD8073 14-Lead Small Outline (R) . . . . . . . . . . . 1.0 Watts
Input Voltage (Common Mode) . . . . . . . . . . . . . . . . . . . . ± VS
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . ± 1.25 V
Output Short Circuit Duration . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . Observe Power Derating Curves
Storage Temperature Range
N, R, RM Packages . . . . . . . . . . . . . . . . . . –65°C to +125°C
Lead Temperature Range (Soldering 10 sec) . . . . . . . . . 300°C
The maximum power that can be safely dissipated by the AD8072
and AD8073 is limited by the associated rise in junction temperature. The maximum safe junction temperature for plastic
encapsulated devices is determined by the glass transition temperature of the plastic, approximately 150°C. Exceeding this
limit temporarily may cause a shift in parametric performance
due to a change in the stresses exerted on the die by the package.
Exceeding a junction temperature of 175°C for an extended
period can result in device failure.
While the AD8072 and AD8073 are internally short circuit protected, this may not be sufficient to guarantee that the maximum
junction temperature (150°C) is not exceeded under all conditions. To ensure proper operation, it is necessary to observe the
maximum power derating curves shown in Figures 2 and 3.
NOTES
1
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
2
Specification is for device in free air:
8-Lead Plastic Package: θJA = 90°C/W
8-Lead SOIC Package: θJA = 140°C/W
8-Lead µSOIC Package: θJA = 214°C/W
14-Lead Plastic Package: θJA = 75°C/W
14-Lead SOIC Package: θJA = 120°C/W
2.0
MAXIMUM POWER DISSIPATION – W
8-LEAD MINI-DIP PACKAGE
ORDERING GUIDE
Temperature
Range
Package
Description
Package
Option
*AD8072ARM
*AD8072ARM-REEL
*AD8072ARM-REEL7
AD8072JN
AD8072JR
AD8072JR-REEL
AD8072JR-REEL7
AD8073JN
AD8073JR
AD8073JR-REEL
AD8073JR-REEL7
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
0°C to 70°C
0°C to 70°C
0°C to 70°C
0°C to 70°C
0°C to 70°C
0°C to 70°C
0°C to 70°C
0°C to 70°C
8-Lead µSOIC
13" Reel 8-Lead µSOIC
7" Reel 8-Lead µSOIC
8-Lead Plastic DIP
8-Lead SOIC
13" Reel 8-Lead SOIC
7" Reel 8-Lead SOIC
14-Lead Plastic DIP
14-Lead Narrow SOIC
13" Reel 14-Lead SOIC
7" Reel 14-Lead SOIC
RM-8
RM-8
RM-8
N-8
SO-8
SO-8
SO-8
N-14
R-14
R-14
R-14
1.5
8-LEAD SOIC PACKAGE
1.0
0.5
␮SOIC
0
–50 –40 –30 –20 –10 0 10 20 30 40 50 60
AMBIENT TEMPERATURE – ⴗC
70 80 90
Figure 2. AD8072 Maximum Power Dissipation vs.
Temperature
2.5
TJ = 150ⴗC
MAXIMUM POWER DISSIPATION – W
Model
TJ = 150ⴗC
*Brand Code: HLA
2.0
14-LEAD DIP PACKAGE
1.5
14-LEAD SOIC
1.0
0.5
–50 –40 –30 –20 –10 0 10 20 30 40 50 60 70
AMBIENT TEMPERATURE – ⴗC
80 90
Figure 3. AD8073 Maximum Power Dissipation vs.
Temperature
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD8072/AD8073 feature proprietary ESD protection circuitry, permanent damage
may occur on devices subjected to high-energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
–4–
WARNING!
ESD SENSITIVE DEVICE
REV. D
7
6.1
6
6.0
5
5.9
GAIN FLATNESS – dB
CLOSED-LOOP GAIN – dB
Typical Performance Characteristics– AD8072/AD8073
4
3
2
1
VS = 5V
RF = 1k⍀
RL = 150⍀ TO 2.5V
AV = 2
VIN = 100mV p-p
0ⴗC
70ⴗC
0
0.1
0.1
1.0
10
FREQUENCY – MHz
100
DIFFERENTIAL PHASE – deg DIFFERENTIAL GAIN – %
CLOSED-LOOP GAIN – dB
5
4
3
0
0.1
0.1
1.0
0ⴗC
70ⴗC
25ⴗC
10
FREQUENCY – MHz
100
1000
TPC 2. Frequency Response Over Temperature; VS = ±5 V
DIFFERENTIAL PHASE – deg DIFFERENTIAL GAIN – %
GAIN FLATNESS – dB
5.9
5.8
5.5
VS = 5V
RF = 1k⍀
RL = 150⍀ TO 2.5V
AV = 2
VIN = 100mV p-p
0ⴗC, 25ⴗC
70ⴗC
5.4
5.3
0.1
1.0
10
FREQUENCY – MHz
100
500
5.5
1.0
10
FREQUENCY – MHz
100
500
0.00
0.12
0.10
0.08
0.06
0.04
0.02
0.00
–0.02
0.03
0.07
0.08
MIN = 0.00
0.08 0.08
MAX = 0.09
p-p/MAX = 0.09
0.09 0.08 0.08 0.07 0.06
VS = 5V, RF = 1k⍀, RL = 150⍀ TO 1.5V, AV = 2
MIN = 0.00
0.00
0.12
0.10
0.08
0.06
0.04
0.02
0.00
–0.02
0.05 0.09
0.10
0.09
0.08
MAX = 0.10
0.06
0.06
0.05
p-p = 0.10
0.04
0.02
VS = 5V, RF = 1k⍀, RL = 150⍀ TO 1.5V, AV = 2
1ST
2ND
3RD 4TH 5TH 6TH 7TH 8TH 9TH
MODULATING RAMP LEVEL – IRE
10TH 11TH
0.00
0.00
0.00 –0.00
MAX = 0.00
p-p/MAX = 0.03
0.00 –0.01 –0.01 –0.02 –0.03 –0.03 –0.03
0.00
–0.01
–0.02
–0.03
VS = ⴞ5V
RF = 1k⍀
RL = 150⍀
AV = 2
MIN = –0.10
0.00
0.02
0.00
–0.02
–0.04
–0.06
–0.08
–0.10
–0.12
MAX = 0.00
p-p = 0.10
0.00 –0.00 –0.02 –0.03 –0.05 –0.07 –0.08 –0.10 –0.10 –0.10
VS = ⴞ5V
RF = 1k⍀
RL = 150⍀
AV = 2
1ST
2ND
3RD 4TH 5TH 6TH 7TH 8TH 9TH
MODULATING RAMP LEVEL – IRE
10TH 11TH
TPC 6. Differential Gain and Phase, VS = ± 5 V
TPC 3. 0.1 dB Flatness vs. Frequency Over Temperature;
VS = 5 V
REV. D
RF = 1k⍀
MIN = –0.03
6.0
5.6
RL = 150⍀
AV = 2
VIN = 100mV p-p
TPC 5. Differential Gain and Phase, VS = 5 V
6.1
5.7
5.6
TPC 4. 0.1 dB Flatness vs. Frequency Over Temperature;
VS = ±5 V
6
1
VS = ⴞ5V
5.3
0.1
1000
7
VS = ⴞ5V
RF = 1k⍀
RL = 150⍀
AV = 2
VIN = 100mV p-p
0ⴗC, 25ⴗC
70ⴗC
5.7
5.4
25ⴗC
TPC 1. Frequency Response Over Temperature; VS = 5 V
2
5.8
–5–
AD8072/AD8073
0
–50
–40
–60
DEGREES
10k
–80
–100
1k
–60
–120
–70
–140
100
–80
–160
–90
–100
0.1
1.0
10
FREQUENCY – MHz
100
10
1k
500
NORMALIZED CLOSED-LOOP GAIN – dB
DISTORTION – dBc
3RD
HARMONIC
2ND
HARMONIC
–80
–90
1
FREQUENCY – MHz
3RD
HARMONIC
GAIN FLATNESS – dB
DISTORTION – dBc
VS = 5V
RF = 1k⍀
RL = 150⍀ TO 2.5V
AV = 2
VOUT = 2V p-p
AV = 1
1
0
–1
–2
VS = ⴞ5V
AV = 10
RF = 1k⍀
–3
AV = 2
RL = 150⍀
VOUT = 200mV p-p
–4
AV = 5
–5
1
10
FREQUENCY – MHz
100
1k
TPC 11. Normalized Frequency Response; VS = ± 5 V
–70
–80
2ND
HARMONIC
6.1
7
6.0
6
5.9
5
5.8
4
5.7
3
VS = 5V
VO = 2V p-p
5.6
1 dB
DIV
RF = RG = 1k⍀
RL = 150⍀ TO 2.5V
5.5
AV = 2
0.1 dB
DIV
0
5.4
1
FREQUENCY – MHz
5.3
0.1
10
2
1
–90
–100
0.1
1G
2
0.1
–40
–60
100M
–6
10
TPC 8. Distortion vs. Frequency; VS = ± 5 V
–50
10M
3
VS = ⴞ5V
RF = 1k⍀
RL = 150⍀
AV = 2
VOUT = 2V p-p
–70
–100
0.1
1M
TPC 10. Open-Loop Transimpedance vs. Frequency
–40
–60
100k
FREQUENCY – Hz
TPC 7. Crosstalk vs. Frequency
–50
–180
10k
CLOSED-LOOP GAIN – dB
–40
OHMS (⍀)
100k
TZ – ⍀
CROSSTALK – dB
–30
–20
SOIC PACKAGE
DRIVE AMP 2
RECEIVE AMPS 1, 3 AD8073
RECEIVE AMP 1 AD8072
VS = 5V, ⴞ5V
RF = 1k⍀, RL = 150⍀
AV = 2
VIN = 1V p-p
DEGREES
–10
–20
0
1M
AMP 2 OUTPUT
1
10
FREQUENCY – MHz
100
–1
500
TPC 12. Large Signal Frequency Response
TPC 9. Distortion vs. Frequency; VS = 5 V
–6–
REV. D
AD8072/AD8073
100
VS = ⴞ5V
RF = 1k⍀
AV = 2
INPUT CURRENT NOISE – pA/ Hz
OUTPUT RESISTANCE – ⍀
100
10
1
80
60
40
20
0
0.1
0.1
1
10
FREQUENCY – MHz
100
1
500
TPC 13. Output Resistance vs. Frequency; VS = ± 5 V
100
1k
FREQUENCY – Hz
10k
100k
TPC 15. Noise vs. Frequency; VS = ± 5 V
50
10
0
40
–10
30
PSRR – dB
INPUT VOLTAGE NOISE – nV/ Hz
10
20
–20
VS = ⴞ5V
RF = 1k⍀
RL = 150⍀
AV = 2
100mV p-p ON TOP
OF VS
–PSRR
–30
–40
ⴙPSRR
–50
10
–60
0
1
10
100
1k
FREQUENCY – Hz
–70
0.02
100k
10k
0.1
TPC 14. Noise vs. Frequency; VS = ± 5 V
1
10
FREQUENCY – MHz
TPC 16. PSRR vs. Frequency
–5
VIN
2V p-p
–10
60.4⍀
–20
CMRR – dB
1k⍀
1k⍀
VOUT
154⍀
–15
154⍀
150⍀
–25
–30
–35
–40
–45
–50
–55
0.02
0.1
1
10
FREQUENCY – MHz
100
TPC 17. CMRR vs. Frequency; VS = ± 5 V
REV. D
100
–7–
500
500
AD8072/AD8073
1k⍀
1k⍀
VOUT
RL
150⍀
VIN
50⍀
0.1␮F
0.001␮F
0.1␮F
0.001␮F
+
+
ⴙVS
10␮F
10␮F
–VS
TPC 18. Test Circuit; Gain = +2
250mV
20ns
250mV
TPC 19. 2 V Step Response; G = +2, VS = ± 5 V
50mV
TPC 22. 2 V Step Response; G = +2, VS = ± 2.5 V*
50mV
20ns
TPC 20. 200 mV Step Response; G = +2, VS = ± 5 V
1V
10ns
20ns
TPC 23. 200 mV Step Response; G = +2, VS = ± 2.5 V*
250mV
20ns
TPC 21. Sine Response; G = +2, VS = ± 5 V
20ns
TPC 24. Sine Response; G = +2, VS = ± 2.5 V*
*VS = ± 2.5 V operation is identical to VS = 5 V single supply operation.
–8–
REV. D
AD8072/AD8073
APPLICATIONS
Overdrive Recovery
Overdrive of an amplifier occurs when the output and/or input
range are exceeded. The amplifier must recover from this overdrive
condition and resume normal operation. As shown in Figure 4,
the AD8072 and AD8073 recover within 75 ns from positive
overdrive and 30 ns from negative overdrive.
On the other hand, the bandwidth of a current feedback amplifier can be decreased by increasing the feedback resistance. This
can sometimes be useful where it is desired to reduce the noise
bandwidth of a system. As a practical matter, the maximum
value of feedback resistor was found to be 2 kΩ. Figure 5 shows
the frequency response of an AD8072/AD8073 at a gain of two
with both feedback and gain resistors equal to 2 kΩ.
Capacitive Load Drive
When an op amp output drives a capacitive load, extra phase shift
due to the pole formed by the op amp’s output impedance and
the capacitor can cause peaking or even oscillation. The top trace
of Figure 6, RS = 0 Ω, shows the output of one of the amplifiers of
the AD8072/AD8073 when driving a 50 pF capacitor as shown in
the schematic of Figure 7.
VIN
VOUT
1V
The amount of peaking can be significantly reduced by adding
a resistor in series with the capacitor. The lower trace of Figure 6
shows the same capacitor being driven with a 25 Ω resistor
in series with it. In general, the resistor value will have to be
experimentally determined, but 10 Ω to 50 Ω is a practical range
of values to experiment with for capacitive loads of up to a few
hundred pF.
25ns
Figure 4. Overload Recovery; VS = ± 5 V, VIN = 8 V p-p,
RF = 1 kΩ, RL = 150 Ω, G = +2
RS = 0Ω
Bandwidth vs. Feedback Resistor Value
RS = 25Ω
6.1
7
6.0
6
5.9
RF = 649⍀ 5
5.8
4
0.1 dB
DIV
5.7
5.6
3
VS = ⴞ5V
AV = 2
RL = 150⍀
VO = 0.2V p-p
1 dB
DIV
5.5
5.4
0.1
2
50mV
1k⍀
1
10
FREQUENCY – MHz
100
VIN = 100mV p-p
50⍀
CL
50pF
RL
1k⍀
Figure 7. Capacitive Load Drive Circuit
0
500
Figure 5. Frequency Response vs. RF
REV. D
1k⍀
RS
1
RF = 2k⍀
20ns
Figure 6. Capacitive Low Drive
CLOSED-LOOP GAIN – dB
GAIN FLATNESS – dB
The closed-loop frequency response of a current feedback amplifier
is a function of the feedback resistor. A smaller feedback resistor
will produce a wider bandwidth response. However, if the feedback resistance becomes too small, the gain flatness can be
affected. As a practical consideration, the minimum value of
feedback resistance for the AD8072/AD8073 was found to be
649 Ω. For resistances below this value, the gain flatness will be
affected and more significant lot-to-lot variations in device performance will be noticed. Figure 5 shows a plot of the frequency
response of an AD8072/AD8073 at a gain of two with both feedback and gain resistors equal to 649 Ω.
–9–
AD8072/AD8073
Crosstalk
Layout Considerations
Crosstalk between internal amplifiers may vary depending on
which amplifier is being driven and how many amplifiers are
being driven. This variation typically stems from pin location on
the package and the internal layout of the IC itself. Table I
illustrates the typical crosstalk results for a combination of
conditions.
The specified high speed performance of the AD8072 and
AD8073 require careful attention to board layout and component selection. Proper RF design techniques and low parasitic
component selection are mandatory.
Table I. AD8073JR Crosstalk Table (dB)
1
Receive Amplifier
1
2
3
X
–60
–56
2
–60
X
–60
3
–54
–60
X
All Hostile
–53
–55
–54
AD8073JR
Drive
Amplifier
CONDITIONS
VS = ± 5 V
RF = 1 kΩ, RL = 150 Ω
AV = 2
VOUT = 2 V p-p on Drive Amplifier
The PCB should have a ground plane covering all unused portions
of the component side of the board to provide a low impedance
ground path. The ground plane should be removed from the
area near the input pins to reduce stray capacitance.
Chip capacitors should be used for supply bypassing. One end
of the capacitor should be connected to the ground plane and
the other within 1/8 inches of each power pin. An additional
large (4.7 µF–10 µF) tantalum electrolytic capacitor should be
connected in parallel, but not necessarily as close to the supply
pins, to provide current for fast large-signal changes at the
device’s output.
The feedback resistor should be located close to the inverting
input pin in order to keep the stray capacitance at this node to a
minimum. Capacitance variations of less than 1 pF at the inverting input will affect high speed performance.
Stripline design techniques should be used for long signal traces
(greater than approximately 1 inch). These should be designed
with a characteristic impedance of 50 Ω or 75 Ω and be properly
terminated at each end.
–10–
REV. D
AD8072/AD8073
OUTLINE DIMENSIONS
Dimensions shown in inches and (mm).
8-Lead Plastic DIP
(N-8)
14-Lead Plastic DIP
(N-14)
0.430 (10.92)
0.348 (8.84)
8
0.795 (20.19)
0.725 (18.42)
5
1
4
0.060 (1.52)
0.015 (0.38)
PIN 1
0.210 (5.33)
MAX
14
8
1
7
0.280 (7.11)
0.240 (6.10)
0.325 (8.25)
0.300 (7.62)
0.130
(3.30)
MIN
0.160 (4.06)
0.115 (2.93)
0.022 (0.558) 0.100 0.070 (1.77)
0.014 (0.356) (2.54) 0.045 (1.15)
BSC
PIN 1
0.100 0.070 (1.77)
(2.54) 0.045 (1.15)
BSC
8-Lead Plastic SOIC
(R-8)
PIN 1
0.0098 (0.25)
0.0040 (0.10)
SEATING
PLANE
8
5
1
4
0.3444 (8.75)
0.3367 (8.55)
0.1574 (4.00)
0.1497 (3.80)
0.2440 (6.20)
0.2284 (5.80)
0.0688 (1.75)
0.0532 (1.35)
0.0500 0.0192 (0.49)
(1.27) 0.0138 (0.35)
BSC
8°
0°
8
1
7
PIN 1
0.0196 (0.50)
x 45°
0.0099 (0.25)
0.0098 (0.25)
0.0075 (0.19)
14
0.0098 (0.25)
0.0040 (0.10)
SEATING
PLANE
0.0500 (1.27)
0.0160 (0.41)
0.0500
(1.27)
BSC
8-Lead ␮SOIC
(RM-8)
0.122 (3.10)
0.114 (2.90)
8
5
0.122 (3.10)
0.114 (2.90)
0.199 (5.05)
0.187 (4.75)
1
4
PIN 1
0.0256 (0.65) BSC
0.120 (3.05)
0.112 (2.84)
0.006 (0.15)
0.002 (0.05)
0.018 (0.46)
SEATING 0.008 (0.20)
PLANE
REV. D
0.015 (0.381)
0.008 (0.204)
SEATING
PLANE
14-Lead SOIC
(R-14)
0.1968 (5.00)
0.1890 (4.80)
0.1574 (4.00)
0.1497 (3.80)
0.325 (8.25)
0.300 (7.62) 0.195 (4.95)
0.115 (2.93)
0.130
(3.30)
MIN
0.160 (4.06)
0.115 (2.93)
0.022 (0.558)
0.014 (0.356)
0.015 (0.381)
0.008 (0.204)
SEATING
PLANE
0.060 (1.52)
0.015 (0.38)
0.210 (5.33)
MAX
0.195 (4.95)
0.115 (2.93)
0.280 (7.11)
0.240 (6.10)
0.120 (3.05)
0.112 (2.84)
0.043 (1.09)
0.037 (0.94)
0.011 (0.28)
0.003 (0.08)
–11–
33ⴗ
27ⴗ
0.028 (0.71)
0.016 (0.41)
0.2440 (6.20)
0.2284 (5.80)
0.0688 (1.75)
0.0532 (1.35)
0.0192 (0.49)
0.0138 (0.35)
0.0099 (0.25)
0.0075 (0.19)
0.0196 (0.50)
x 45°
0.0099 (0.25)
8°
0°
0.0500 (1.27)
0.0160 (0.41)
AD8072/AD8073
Revision History
Location
Page
3/02—Data Sheet changed from REV. C to REV. D.
10/01—Data Sheet changed from REV. B to REV. C.
PRINTED IN U.S.A.
Edits to ELECTRICAL CHARACTERISTICS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
C01066–0–3/02(D)
Edits to Package Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
–12–
REV. D