TI1 LMH6683MA/NOPB Lmh6682/6683 190mhz single supply, dual and triple operational amplifier Datasheet

LMH6682, LMH6683
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SNOSA43A – MAY 2004 – REVISED APRIL 2013
LMH6682/6683 190MHz Single Supply, Dual and Triple Operational Amplifiers
Check for Samples: LMH6682, LMH6683
FEATURES
1
VS = ±5V, TA = 25°C, RL = 100Ω, A = +2 (Typical
Values Unless Specified)
2
•
•
•
•
•
•
•
•
•
DG error 0.01%
DP error 0.08°
−3dB BW (A = +2) 190MHz
Slew rate (VS = ±5V) 940V/μs
Supply Current 6.5mA/amp
Output Current +80/−90mA
Input Common Mode Voltage 0.5V Beyond
V−,1.7V from V+
Output Voltage Swing (RL = 2kΩ) 0.8V from
Rails
Input Voltage Noise (100KHz) 12nV/√Hz
APPLICATIONS
•
•
•
•
•
CD/DVD ROM
ADC Buffer Amp
Portable Video
Current Sense Buffer
Portable Communications
DESCRIPTION
The LMH6682 and LMH6683 are high speed
operational amplifiers designed for use in modern
video systems. These single supply monolithic
amplifiers extend TI's feature-rich, high value video
portfolio to include a dual and a triple version. The
important video specifications of differential gain (±
0.01% typ.) and differential phase (±0.08 degrees)
combined with an output drive current in each
amplifier of 85mA make the LMH6682 and LMH6683
excellent choices for a full range of video
applications.
Voltage feedback topology in operational amplifiers
assures maximum flexibility and ease of use in high
speed amplifier designs. The LMH6682/83 is
fabricated in TI's VIP10 process. This advanced
process provides a superior ratio of speed to
quiescient current consumption and assures the user
of high-value amplifier designs. Advanced technology
and circuit design enables in these amplifiers a −3db
bandwidth of 190MHz, a slew rate of 940V/μsec, and
stability for gains of less than −1 and greater than +2.
The input stage design of the LM6682/83 enables an
input signal range that extends below the negative
rail. The output stage voltage range reaches to within
0.8V of either rail when driving a 2kΩ load. Other
attractive features include fast settling and low
distortion. Other applications for these amplifiers
include servo control designs. These applications are
sensitive to amplifiers that exhibit phase reversal
when the inputs exceed the rated voltage range. The
LMH6682/83 amplifiers are designed to be immune to
phase reversal when the specified input range is
exceeded. See applications section. This feature
makes for design simplicity and flexibility in many
industrial applications.
The LMH6682 dual operational amplifier is offered in
miniature surface mount packages, SOIC-8, and
VSSOP-8. The LMH6683 triple amplifier is offered in
SOIC-14 and TSSOP-14.
1
2
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2004–2013, Texas Instruments Incorporated
LMH6682, LMH6683
SNOSA43A – MAY 2004 – REVISED APRIL 2013
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Connection Diagram
Figure 1. SOIC-8/VSSOP-8 (LMH6682)
Top View
Figure 2. SOIC-14/TSSOP-14 (LMH6683)
Top View
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings (1) (2)
ESD Tolerance
2KV (3)
Human Body Model
200V (4)
Machine Model
VIN Differential
±2.5V
See (5) (6)
Output Short Circuit Duration
Input Current
±10mA
Supply Voltage (V+ - V−)
12.6V
V+ +0.8V, V− −0.8V
Voltage at Input/Output pins
Soldering Information
Infrared or Convection (20 sec.)
Wave Soldering (10 sec.)
Junction Temperature (7)
(2)
(3)
(4)
(5)
(6)
(7)
260°C
−65°C to +150°C
Storage Temperature Range
(1)
235°C
+150°C
Absolute maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is intended to be functional, but specific performance is not ensured. For ensured specifications and the test
conditions, see the Electrical Characteristics.
If Military/Aerospace specified devices are required, please contact the TI Sales Office/ Distributors for availability and specifications.
Human body model, 1.5kΩ in series with 100pF.
Machine Model, 0Ω in series with 200pF.
Applies to both single-supply and split-supply operation. Continuous short circuit operation at elevated ambient temperature can result in
exceeding the maximum allowed junction temperature of 150°C.
Output short circuit duration is infinite for VS < 6V at room temperature and below. For VS > 6V, allowable short circuit duration is 1.5ms.
The maximum power dissipation is a function of TJ(MAX), θJA, and TA. The maximum allowable power dissipation at any ambient
temperature is PD = (TJ(MAX) - TA)/ θJA . All numbers apply for packages soldered directly onto a PC board.
Operating Ratings (1)
Supply Voltage (V+ – V−)
3V to 12V
Operating Temperature Range (2)
Package Thermal Resistance (2)
(1)
(2)
2
−40°C to +85°C
SOIC-8
190°C/W
VSSOP-8
235°C/W
SOIC-14
145°C/W
TSSOP-14
155°C/W
Absolute maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is intended to be functional, but specific performance is not ensured. For ensured specifications and the test
conditions, see the Electrical Characteristics.
The maximum power dissipation is a function of TJ(MAX), θJA, and TA. The maximum allowable power dissipation at any ambient
temperature is PD = (TJ(MAX) - TA)/ θJA . All numbers apply for packages soldered directly onto a PC board.
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5V Electrical Characteristics
Unless otherwise specified, all limits ensured for at TJ = 25°C, V+ = 5V, V− = 0V, VO = VCM = V+/2, and RL = 100Ω to V+/2, RF
= 510Ω. Boldface limits apply at the temperature extremes.
Symbol
SSBW
Parameter
−3dB BW
Conditions
A = +2, VOUT = 200mVPP
Min (1)
Typ (2)
140
180
A = −1, VOUT = 200mVPP
180
Max (1)
Units
MHz
GFP
Gain Flatness Peaking
A = +2, VOUT = 200mVPP
DC to 100MHz
2.1
dB
GFR
Gain Flatness Rolloff
A = +2, VOUT = 200mVPP
DC to 100MHz
0.1
dB
LPD 1°
1° Linear Phase Deviation
A = +2, VOUT = 200mVPP, ±1°
40
MHz
GF 0.1dB
0.1dB Gain Flatness
A = +2, ±0.1dB, VOUT = 200mVPP
25
MHz
FPBW
Full Power −1dB Bandwidth
A = +2, VOUT = 2VPP
110
MHz
DG
Differential Gain
NTSC 3.58MHz
A = +2, RL = 150Ω to V+/2
Pos video only VCM = 2V
0.03
%
DP
Differential Phase
NTSC 3.58MHz
A = +2, RL = 150Ω to V+/2
Pos video only VCM = 2V
0.05
deg
20-80%, VO = 1VPP, AV = +2
2.1
20-80%, VO = 1VPP, AV = −1
2
Time Domain Response
Tr/Tf
Rise and Fall Time
ns
OS
Overshoot
A = +2, VO = 100mVPP
22
%
Ts
Settling Time
VO = 2VPP, ±0.1%, AV = +2
49
ns
SR
Slew Rate (3)
A = +2, VOUT = 3VPP
520
A = −1, VOUT = 3VPP
500
f = 5MHz, VO = 2VPP, A = +2, RL = 2kΩ
−60
f = 5MHz, VO = 2VPP, A = +2, RL =
100Ω
−61
f = 5MHz, VO = 2VPP, A = +2, RL = 2kΩ
−77
f = 5MHz, VO = 2VPP, A = +2, RL =
100Ω
−54
f = 5MHz, VO = 2VPP, A = +2, RL = 2kΩ
−60
f = 5MHz, VO = 2VPP, A = +2, RL =
100Ω
−53
dBc
f = 1kHz
17
nV/√Hz
f = 100kHz
12
f = 1kHz
8
f = 100kHz
3
V/μs
Distortion and Noise Response
HD2
HD3
THD
en
2nd Harmonic Distortion
3rd Harmonic Distortion
Total Harmonic Distortion
Input Referred Voltage Noise
in
Input Referred Current Noise
CT
Cross-Talk Rejection (Amplifier)
dBc
dBc
pA/√Hz
−77
f = 5MHz, A = +2, SND: RL = 100Ω
RCV: RF = RG = 510Ω
dB
Static, DC Performance
AVOL
CMVR
(1)
(2)
(3)
Large Signal Voltage Gain
Input Common-Mode Voltage
Range
VO = 1.25V to 3.75V,
RL = 2kΩ to V+/2
85
95
VO = 1.5V to 3.5V,
RL = 150Ω to V+/2
75
85
VO = 2V to 3V,
RL = 50Ω to V+/2
70
80
−0.2
−0.1
−0.5
3.0
2.8
3.3
CMRR ≥ 50dB
dB
V
All limits are ensured by testing or statistical analysis.
Typical values represent the most likely parametric norm.
Slew rate is the average of the rising and falling slew rates
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5V Electrical Characteristics (continued)
Unless otherwise specified, all limits ensured for at TJ = 25°C, V+ = 5V, V− = 0V, VO = VCM = V+/2, and RL = 100Ω to V+/2, RF
= 510Ω. Boldface limits apply at the temperature extremes.
Symbol
Parameter
Min (1)
Conditions
Typ (2)
Max (1)
Units
±1.1
±5
±7
mV
VOS
Input Offset Voltage
TC VOS
Input Offset Voltage Average
Drift
See (4)
±2
IB
Input Bias Current
See (5)
−5
TC IB
Input Bias Current Drift
IOS
Input Offset Current
CMRR
Common Mode Rejection Ratio
VCM Stepped from 0V to 3.0V
72
82
dB
+PSRR
Positive Power Supply Rejection
Ratio
V+ = 4.5V to 5.5V, VCM = 1V
70
76
dB
IS
Supply Current (per channel)
No load
μV/°C
−20
−30
0.01
50
6.5
μA
nA/°C
300
500
9
11
nA
mA
Miscellaneous Performance
VO
Output Swing
High
Output Swing
Low
RL = 2kΩ to V+/2
4.10
3.8
4.25
RL = 150Ω to V+/2
3.90
3.70
4.19
RL = 75Ω to V+/2
3.75
3.50
4.15
RL = 2kΩ to V+/2
800
920
1100
RL = 150Ω to V+/2
870
970
1200
885
1100
1250
+
R L = 75Ω to V /2
IOUT
Output Current
VO = 1V from either supply rail
±40
+80/−75
ISC
Output Short Circuit
Current (6) (7) (8)
Sourcing to V+/2
−100
−80
−155
Sinking from V+/2
100
80
220
RIN
Common Mode Input Resistance
CIN
Common Mode Input
Capacitance
ROUT
Output Resistance Closed Loop
(4)
(5)
(6)
(7)
(8)
4
V
3
1.6
f = 1kHz, A = +2, RL = 50Ω
0.02
f = 1MHz, A = +2, RL = 50Ω
0.12
mV
mA
mA
MΩ
pF
Ω
Offset Voltage average drift determined by dividing the change in VOS at temperature extremes into the total temperature change.
Positive current corresponds to current flowing into the device.
Short circuit test is a momentary test. See next note.
Output short circuit duration is infinite for VS < 6V at room temperature and below. For VS > 6V, allowable short circuit duration is 1.5ms.
Positive current corresponds to current flowing into the device.
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±5V Electrical Characteristics
Unless otherwise specified, all limits ensured for at TJ = 25°C, V+ = 5V, V− = −5V, VO = VCM = 0V, and RL = 100Ω to 0V, RF =
510Ω. Boldface limits apply at the temperature extremes.
Symbol
SSBW
Parameter
−3dB BW
Conditions
A = +2, VOUT = 200mVPP
Min (1)
Typ (2)
150
190
A = −1, VOUT = 200mVPP
190
Max (1)
Units
MHz
GFP
Gain Flatness Peaking
A = +2, VOUT = 200mVPP
DC to 100MHz
1.7
dB
GFR
Gain Flatness Rolloff
A = +2, VOUT = 200mVPP
DC to 100MHz
0.1
dB
LPD 1°
1° Linear Phase Deviation
A = +2, VOUT = 200mVPP, ±1°
40
MHz
GF 0.1dB
0.1dB Gain Flatness
A = +2, ±0.1dB, VOUT = 200mVPP
25
MHz
FPBW
Full Power −1dB Bandwidth
A = +2, VOUT = 2VPP
120
MHz
DG
Differential Gain
NTSC 3.58MHz
A = +2, RL = 150Ω to 0V
0.01
%
DP
Differential Phase
NTSC 3.58MHz
A = +2, RL = 150Ω to 0V
0.08
deg
20-80%, VO = 1VPP, A = +2
1.9
20-80%, VO = 1VPP, A = −1
2
Time Domain Response
Tr/Tf
Rise and Fall Time
ns
OS
Overshoot
A = +2, VO = 100mVPP
19
%
Ts
Settling Time
VO = 2VPP, ±0.1%, A = +2
42
ns
SR
Slew Rate (3)
A = +2, VOUT = 6VPP
940
A = −1, VOUT = 6VPP
900
f = 5MHz, VO = 2VPP, A = +2, RL = 2kΩ
−63
f = 5MHz, VO = 2VPP, A = +2, RL =
100Ω
−66
f = 5MHz, VO = 2VPP, A = +2, RL = 2kΩ
−82
f = 5MHz, VO = 2VPP, A = +2, RL =
100Ω
−54
f = 5MHz, VO = 2VPP, A = +2, RL = 2kΩ
−63
f = 5MHz, VO = 2VPP, A = +2, RL =
100Ω
−54
dBc
f = 1kHz
18
nV/√Hz
f = 100kHz
12
f = 1kHz
6
f = 100kHz
3
V/μs
Distortion and Noise Response
HD2
HD3
THD
en
2nd Harmonic Distortion
3rd Harmonic Distortion
Total Harmonic Distortion
Input Referred Voltage Noise
in
Input Referred Current Noise
CT
Cross-Talk Rejection (Amplifier)
dBc
dBc
pA/√Hz
−78
f = 5MHz, A = +2, SND: RL = 100Ω
RCV: RF = RG = 510Ω
dB
Static, DC Performance
AVOL
CMVR
(1)
(2)
(3)
Large Signal Voltage Gain
Input Common Mode Voltage
Range
VO = −3.75V to 3.75V,
RL = 2kΩ to V+/2
87
100
VO = −3.5V to 3.5V,
RL = 150Ω to V+/2
80
90
VO = −3V to 3V,
RL = 50Ω to V+/2
75
85
−5.2
−5.1
−5.5
3.0
2.8
3.3
CMRR ≥ 50dB
dB
V
All limits are ensured by testing or statistical analysis.
Typical values represent the most likely parametric norm.
Slew rate is the average of the rising and falling slew rates
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±5V Electrical Characteristics (continued)
Unless otherwise specified, all limits ensured for at TJ = 25°C, V+ = 5V, V− = −5V, VO = VCM = 0V, and RL = 100Ω to 0V, RF =
510Ω. Boldface limits apply at the temperature extremes.
Symbol
Parameter
Min (1)
Conditions
Typ (2)
Max (1)
Units
±1
±5
±7
mV
VOS
Input Offset Voltage
TC VOS
Input Offset Voltage Average
Drift
See (4)
±2
IB
Input Bias Current
See (5)
−5
TC IB
Input Bias Current Drift
IOS
Input Offset Current
CMRR
Common Mode Rejection Ratio
VCM Stepped from −5V to 3.0V
75
84
dB
+PSRR
Positive Power Supply Rejection
Ratio
V+ = 8.5V to 9.5V,
V− = −1V
75
82
dB
−PSRR
Negative Power Supply Rejection V− = −4.5V to −5.5V,
Ratio
V+ = 5V
78
85
dB
IS
Supply Current (per channel)
μV/°C
−20
−30
0.01
50
No load
6.5
μA
nA/°C
300
500
9.5
11
nA
mA
Miscellaneous Performance
VO
Output Swing
High
Output Swing
Low
RL = 2kΩ to 0V
4.10
3.80
4.25
RL = 150Ω to 0V
3.90
3.70
4.20
RL = 75Ω to 0V
3.75
3.50
4.18
RL = 2kΩ to 0V
−4.19
−4.07
−3.80
RL = 150Ω to 0V
−4.05
−3.89
−3.65
R L = 75Ω to 0V
−4.00
−3.70
−3.50
IOUT
Output Current
VO = 1V from either supply rail
±45
+85/−80
ISC
Output Short Circuit
Current (6) (7) (8)
Sourcing to 0V
−120
−100
−180
Sinking from 0V
120
100
230
RIN
Common Mode Input Resistance
CIN
Common Mode Input
Capacitance
ROUT
Output Resistance Closed Loop
(4)
(5)
(6)
(7)
(8)
6
V
4
1.6
f = 1kHz, A = +2, RL = 50Ω
0.02
f = 1MHz, A = +2, RL = 50Ω
0.12
mV
mA
mA
MΩ
pF
Ω
Offset Voltage average drift determined by dividing the change in VOS at temperature extremes into the total temperature change.
Positive current corresponds to current flowing into the device.
Short circuit test is a momentary test. See next note.
Output short circuit duration is infinite for VS < 6V at room temperature and below. For VS > 6V, allowable short circuit duration is 1.5ms.
Positive current corresponds to current flowing into the device.
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Typical Schematic
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Typical Performance Characteristics
At TA = 25°C, V = +5V, V− = −5V, RF = 510Ω for A = +2; unless otherwise specified.
+
8
Non-Inverting Frequency Response
Inverting Frequency Response
Figure 3.
Figure 4.
Non-Inverting Frequency Response for Various Gain
Inverting Frequency Response for Various Gain
Figure 5.
Figure 6.
Non-Inverting Phase vs. Frequency for Various Gain
Inverting Phase vs. Frequency for Various Gain
Figure 7.
Figure 8.
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Typical Performance Characteristics (continued)
+
−
At TA = 25°C, V = +5V, V = −5V, RF = 510Ω for A = +2; unless otherwise specified.
Open Loop Gain & Phase vs. Frequency
Open Loop Gain and Phase vs. Frequency Over
Temperature
Figure 9.
Figure 10.
Non-Inverting Frequency Response Over Temperature
Inverting Frequency Response Over Temperature
Figure 11.
Figure 12.
Gain Flatness 0.1dB
Differential Gain & Phase for A = +2
Figure 13.
Figure 14.
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Typical Performance Characteristics (continued)
+
−
At TA = 25°C, V = +5V, V = −5V, RF = 510Ω for A = +2; unless otherwise specified.
10
Transient Response Negative
Transient Response Positive
Figure 15.
Figure 16.
Noise vs. Frequency
Noise vs. Frequency
Figure 17.
Figure 18.
Harmonic Distortion vs. VOUT
Harmonic Distortion vs. VOUT
Figure 19.
Figure 20.
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Typical Performance Characteristics (continued)
+
−
At TA = 25°C, V = +5V, V = −5V, RF = 510Ω for A = +2; unless otherwise specified.
Harmonic Distortion vs. VOUT
THD vs. for Various Frequencies
Figure 21.
Figure 22.
Harmonic Distortion vs. Frequency
Crosstalk vs. Frequency
Figure 23.
Figure 24.
ROUT vs. Frequency
IOS vs. VSUPPLY Over Temperature
Figure 25.
Figure 26.
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Typical Performance Characteristics (continued)
+
−
At TA = 25°C, V = +5V, V = −5V, RF = 510Ω for A = +2; unless otherwise specified.
12
VOS vs. VS @ −40°C
VOS vs. VS @ 25°C
Figure 27.
Figure 28.
VOS vs. VS @ 85°C
VOS vs. VS @ 125°C
Figure 29.
Figure 30.
VOS vs. VOUT
VOS vs. VOUT
Figure 31.
Figure 32.
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Typical Performance Characteristics (continued)
+
−
At TA = 25°C, V = +5V, V = −5V, RF = 510Ω for A = +2; unless otherwise specified.
ISUPPLY/Amp vs. VCM
ISUPPLY/Amp vs. VSUPPLY
Figure 33.
Figure 34.
VOUT vs. ISOURCE
VOUT vs. ISINK
Figure 35.
Figure 36.
VOUT vs. ISOURCE
VOUT vs. ISINK
Figure 37.
Figure 38.
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Typical Performance Characteristics (continued)
+
−
At TA = 25°C, V = +5V, V = −5V, RF = 510Ω for A = +2; unless otherwise specified.
14
VOS vs. VCM
|IB|vs. VS
Figure 39.
Figure 40.
Short Circuit ISOURCE vs. VS
Short Circuit ISINK vs. VS
Figure 41.
Figure 42.
Linearity Input vs. Output
Linearity Input vs. Output
Figure 43.
Figure 44.
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Typical Performance Characteristics (continued)
+
−
At TA = 25°C, V = +5V, V = −5V, RF = 510Ω for A = +2; unless otherwise specified.
CMRR vs. Frequency
PSRR vs. Frequency
Figure 45.
Figure 46.
Small Signal Pulse Response for A = +2
Small Signal Pulse Response A = −1
Figure 47.
Figure 48.
Large Signal Pulse Response
Large Signal Pulse Response
Figure 49.
Figure 50.
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APPLICATIONS SECTION
LARGE SIGNAL BEHAVIOR
Amplifying high frequency signals with large amplitudes (as in video applications) has some special aspects to
look after. The bandwidth of the Op Amp for large amplitudes is less than the small signal bandwidth because of
slew rate limitations. While amplifying pulse shaped signals the slew rate properties of the OpAmp become more
important at higher amplitude ranges. Due to the internal structure of an Op Amp the output can only change with
a limited voltage difference per time unit (dV/dt). This can be explained as follows: To keep it simple, assume
that an Op Amp consists of two parts; the input stage and the output stage. In order to stabilize the Op Amp, the
output stage has a compensation capacitor in its feedback path. This Miller C integrates the current from the
input stage and determines the pulse response of the Op Amp. The input stage must charge/discharge the
feedback capacitor, as can be seen in Figure 51.
Figure 51.
When a voltage transient is applied to the non inverting input of the Op Amp, the current from the input stage will
charge the capacitor and the output voltage will slope up. The overall feedback will subtract the gradually
increasing output voltage from the input voltage. The decreasing differential input voltage is converted into a
current by the input stage (Gm).
I*Δt = C *ΔV
ΔV/Δt = I/C
I=ΔV*Gm
(1)
(2)
(3)
where I = current
t = time
C = capacitance
V = voltage
Gm = transconductance
Slew rate ΔV/Δt = volt/second
In most amplifier designs the current I is limited for high differential voltages (Gm becomes zero). The slew rate
will than be limited as well:
ΔV/Δt = Imax/C
(4)
The LMH6682/83 has a different setup of the input stage. It has the property to deliver more current to the output
stage when the input voltage is higher (class AB input). The current into the Miller capacitor exhibits an
exponential character, while this current in other Op Amp designs reaches a saturation level at high input levels:
(see Figure 52)
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SNOSA43A – MAY 2004 – REVISED APRIL 2013
Figure 52.
This property of the LMH6682/83 guaranties a higher slew rate at higher differential input voltages.
ΔV/Δt = ΔV*Gm/C
(5)
In Figure 53 one can see that a higher transient voltage than will lead to a higher slew rate.
Figure 53.
HANDLING VIDEO SIGNALS
When handling video signals, two aspects are very important especially when cascading amplifiers in a NTSC- or
PAL video system. A composite video signal consists of both amplitude and phase information. The amplitude
represents saturation while phase determines color (color burst is 3.59MHz for NTSC and 4.58MHz for PAL
systems). In this case it is not only important to have an accurate amplification of the amplitude but also it is
important not to add a varying phase shift to the video signals. It is a known phenomena that at different dc
levels over a certain load the phase of the amplified signal will vary a little bit. In a video chain many amplifiers
will be cascaded and all errors will be added together. For this reason, it is necessary to have strict requirements
for the variation in gain and phase in conjunction to different dc levels. As can be seen in the tables the number
for the differential gain for the LMH6682/83 is only 0.01% and for the differential phase it is only 0.08° at a supply
voltage of ±5V. Note that the phase is very dependent of the load resistance, mainly because of the dc current
delivered by the parts output stage into the load. For more information about differential gain and phase and how
to measure it see Application Note OA-24 SNOA370 which can be found on via TI's home page
http://www.ti.com
Copyright © 2004–2013, Texas Instruments Incorporated
Product Folder Links: LMH6682 LMH6683
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LMH6682, LMH6683
SNOSA43A – MAY 2004 – REVISED APRIL 2013
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OUTPUT PHASE REVERSAL
This is a problem with some operational amplifiers. This effect is caused by phase reversal in the input stage due
to saturation of one or more of the transistors when the inputs exceed the normal expected range of voltages.
Some applications, such as servo control loops among others, are sensitive to this kind of behavior and would
need special safeguards to ensure proper functioning. The LMH6682/6683 is immune to output phase reversal
with input overload. With inputs exceeded, the LMH6682/6683 output will stay at the clamped voltage from the
supply rail. Exceeding the input supply voltages beyond the Absolute Maximum Ratings of the device could
however damage or otherwise adversely effect the reliability or life of the device.
DRIVING CAPACITIVE LOADS
The LMH6682/6683 can drive moderate values of capacitance by utilizing a series isolation resistor between the
output and the capacitive load. Capacitive load tolerance will improve with higher closed loop gain values.
Applications such as ADC buffers, among others, present complex and varying capacitive loads to the Op Amp;
best value for this isolation resistance is often found by experimentation and actual trial and error for each
application.
DISTORTION
Applications with demanding distortion performance requirements are best served with the device operating in
the inverting mode. The reason for this is that in the inverting configuration, the input common mode voltage
does not vary with the signal and there is no subsequent ill effects due to this shift in operating point and the
possibility of additional non-linearity. Moreover, under low closed loop gain settings (most suited to low
distortion), the non-inverting configuration is at a further disadvantage of having to contend with the input
common voltage range. There is also a strong relationship between output loading and distortion performance
(i.e. 2kΩ vs. 100Ω distortion improves by about 15dB @1MHz) especially at the lower frequency end where the
distortion tends to be lower. At higher frequency, this dependence diminishes greatly such that this difference is
only about 5dB at 10MHz. But, in general, lighter output load leads to reduced HD3 term and thus improves
THD. (See Harmonic Distortion plots, Figures 19 through 23).
PRINTED CIRCUIT BOARD LAYOUT AND COMPONENT VALUES SELECTION
Generally it is a good idea to keep in mind that for a good high frequency design both the active parts and the
passive ones are suitable for the purpose you are using them for. Amplifying frequencies of several hundreds of
MHz is possible while using standard resistors but it makes life much easier when using surface mount ones.
These resistors (and capacitors) are smaller and therefore parasitics have lower values and will have less
influence on the properties of the amplifier. Another important issue is the PCB, which is no longer a simple
carrier for all the parts and a medium to interconnect them. The board becomes a real part itself, adding its own
high frequency properties to the overall performance of the circuit. It's good practice to have at least one ground
plane on a PCB giving a low impedance path for all decouplings and other ground connections. Care should be
taken especially that on board transmission lines have the same impedance as the cables they are connected to
(i.e. 50Ω for most applications and 75Ω in case of video and cable TV applications). These transmission lines
usually require much wider traces on a standard double sided PCB than needed for a 'normal' connection.
Another important issue is that inputs and outputs must not 'see' each other or are routed together over the PCB
at a small distance. Furthermore it is important that components are placed as flat as possible on the surface of
the PCB. For higher frequencies a long lead can act as a coil, a capacitor or an antenna. A pair of leads can
even form a transformer. Careful design of the PCB avoids oscillations or other unwanted behavior. When
working with really high frequencies, the only components which can be used will be the surface mount ones (for
more information see OA-15 SNOA367).
As an example of how important the component values are for the behavior of your circuit, look at the following
case: On a board with good high frequency layout, an amplifier is placed. For the two (equal) resistors in the
feedback path, 5 different values are used to set the gain to +2. The resistors vary from 200Ω to 3kΩ.
18
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SNOSA43A – MAY 2004 – REVISED APRIL 2013
Figure 54.
In Figure 54 it can be seen that there's more peaking with higher resistor values, which can lead to oscillations
and bad pulse responses. On the other hand the low resistor values will contribute to higher overall power
consumption.
TI suggests the following evaluation boards as a guide for high frequency layout and as an aid in device testing
and characterization.
Device
Package
Evaluation Board PN
LMH6682MA
8-Pin SOIC
CLC730036
LMH6682MM
8-Pin VSSOP
CLC730123
LMH6683MA
14-Pin SOIC
CLC730031
LMH6683MT
14-Pin TSSOP
CLC730131
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LMH6682, LMH6683
SNOSA43A – MAY 2004 – REVISED APRIL 2013
www.ti.com
REVISION HISTORY
Changes from Original (April 2013) to Revision A
•
20
Page
Changed layout of National Data Sheet to TI format .......................................................................................................... 19
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PACKAGE OPTION ADDENDUM
www.ti.com
25-Feb-2015
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
MSL Peak Temp
(2)
(6)
(3)
Op Temp (°C)
Device Marking
(4/5)
LMH6682MA/NOPB
ACTIVE
SOIC
D
8
95
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 85
LMH66
82MA
LMH6682MAX/NOPB
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 85
LMH66
82MA
LMH6682MM/NOPB
ACTIVE
VSSOP
DGK
8
1000
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 85
A90A
LMH6682MMX/NOPB
ACTIVE
VSSOP
DGK
8
3500
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 85
A90A
LMH6683MA/NOPB
ACTIVE
SOIC
D
14
55
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 85
LMH66
83MA
LMH6683MAX/NOPB
ACTIVE
SOIC
D
14
2500
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 85
LMH66
83MA
LMH6683MT/NOPB
ACTIVE
TSSOP
PW
14
94
Green (RoHS
& no Sb/Br)
CU NIPDAU | CU SN
Level-1-260C-UNLIM
-40 to 85
LMH66
83MT
LMH6683MTX/NOPB
ACTIVE
TSSOP
PW
14
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU | CU SN
Level-1-260C-UNLIM
-40 to 85
LMH66
83MT
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
Addendum-Page 1
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
(4)
25-Feb-2015
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
6-Nov-2015
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
B0
(mm)
K0
(mm)
P1
(mm)
W
Pin1
(mm) Quadrant
LMH6682MAX/NOPB
SOIC
D
8
2500
330.0
12.4
6.5
5.4
2.0
8.0
12.0
Q1
LMH6682MM/NOPB
VSSOP
DGK
8
1000
178.0
12.4
5.3
3.4
1.4
8.0
12.0
Q1
LMH6682MMX/NOPB
VSSOP
DGK
8
3500
330.0
12.4
5.3
3.4
1.4
8.0
12.0
Q1
LMH6683MAX/NOPB
SOIC
D
14
2500
330.0
16.4
6.5
9.35
2.3
8.0
16.0
Q1
LMH6683MTX/NOPB
TSSOP
PW
14
2500
330.0
12.4
6.95
5.6
1.6
8.0
12.0
Q1
LMH6683MTX/NOPB
TSSOP
PW
14
2500
330.0
12.4
6.95
5.6
1.6
8.0
12.0
Q1
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
6-Nov-2015
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
LMH6682MAX/NOPB
SOIC
D
8
2500
367.0
367.0
35.0
LMH6682MM/NOPB
VSSOP
DGK
8
1000
210.0
185.0
35.0
LMH6682MMX/NOPB
VSSOP
DGK
8
3500
367.0
367.0
35.0
LMH6683MAX/NOPB
SOIC
D
14
2500
367.0
367.0
35.0
LMH6683MTX/NOPB
TSSOP
PW
14
2500
367.0
367.0
35.0
LMH6683MTX/NOPB
TSSOP
PW
14
2500
367.0
367.0
35.0
Pack Materials-Page 2
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