APT30M17JFLL
300V 135A
POWER MOS 7
R
FREDFET
®
VDSS
ID
27
2
T-
D
G
SO
"UL Recognized"
ISOTOP ®
• Increased Power Dissipation
• Easier To Drive
• Popular SOT-227 Package
•FAST RECOVERY BODY DIODE
MAXIMUM RATINGS
Symbol
S
S
Power MOS 7 is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
®
losses are addressed with Power MOS 7 by significantly lowering RDS(ON)
®
and Qg. Power MOS 7 combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
0.017Ω
D
G
S
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT30M17JFLL
UNIT
300
Volts
Drain-Source Voltage
135
Continuous Drain Current @ TC = 25°C
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
VGSM
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
694
Watts
Linear Derating Factor
5.56
W/°C
PD
TJ,TSTG
1
540
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
EAS
Single Pulse Avalanche Energy
1
Volts
-55 to 150
°C
300
Amps
135
(Repetitive and Non-Repetitive)
1
50
4
mJ
3600
STATIC ELECTRICAL CHARACTERISTICS
MIN
BVDSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
300
RDS(on)
Drain-Source On-State Resistance
IDSS
IGSS
VGS(th)
2
(VGS = 10V, ID = 67.5A)
TYP
MAX
UNIT
Volts
0.017
Ohms
Zero Gate Voltage Drain Current (VDS = 300V, VGS = 0V)
250
Zero Gate Voltage Drain Current (VDS = 240V, VGS = 0V, TC = 125°C)
1000
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
±100
nA
5
Volts
Gate Threshold Voltage (VDS = VGS, ID = 5mA)
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
µA
4-2004
Characteristic / Test Conditions
050-7159 Rev A
Symbol
APT30M17JFLL
DYNAMIC CHARACTERISTICS
Symbol
Ciss
Characteristic
Test Conditions
Input Capacitance
Coss
VGS = 0V
Output Capacitance
VDS = 25V
Crss
Reverse Transfer Capacitance
f = 1 MHz
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain ("Miller") Charge
td(on)
Turn-on Delay Time
tr
3
RESISTIVE SWITCHING
VGS = 15V
VDD = 150V
ID = 135A @ 25°C
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
INDUCTIVE SWITCHING @ 25°C
6
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
ns
1120
VDD = 200V, VGS = 15V
1250
ID = 100A, RG = 5Ω
INDUCTIVE SWITCHING @ 125°C
6
nC
13
RG = 0.6Ω
Eon
UNIT
pF
185
230
85
105
19
31
44
VDD =150V
Fall Time
MAX
14100
3285
ID = 135A @ 25°C
Turn-off Delay Time
tf
TYP
VGS = 10V
Rise Time
td(off)
MIN
µJ
1325
VDD = 200V, VGS = 15V
ID = 100A, RG = 5Ω
1460
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
IS
Characteristic / Test Conditions
TYP
ISM
Pulsed Source Current
VSD
Diode Forward Voltage
2
Peak Diode Recovery
dt
dv/
MAX
135
Continuous Source Current (Body Diode)
1
dv/
MIN
UNIT
Amps
(Body Diode)
540
(VGS = 0V, IS = -135A)
1.3
Volts
8
V/ns
dt
5
t rr
Reverse Recovery Time
(IS = -135A, di/dt = 100A/µs)
Tj = 25°C
200
300
Tj = 125°C
250
525
Q rr
Reverse Recovery Charge
(IS = -135A, di/dt = 100A/µs)
Tj = 25°C
1.5
Tj = 125°C
4.4
IRRM
Peak Recovery Current
(IS = -135A, di/dt = 100A/µs)
Tj = 25°C
15
Tj = 125°C
25
ns
µC
Amps
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
RθJC
Junction to Case
RθJA
Junction to Ambient
TYP
MAX
0.18
40
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
0.9
0.7
0.12
0.5
Note:
0.08
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-7159 Rev A
4-2004
0.20
0.3
0.1
0
t1
t2
0.04
SINGLE PULSE
0.05
10-5
10-4
°C/W
4 Starting Tj = +25°C, L = .40mH, RG = 25Ω, Peak IL = 135A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ ID-135A di/dt ≤ 700A/µs VR ≤ 300 TJ ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and inforation contained herein.
0.16
UNIT
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
10
Typical Performance Curves
VGS =15 & 10V
RC MODEL
0.0268
Power
(watts)
0.109
0.0426
0.0456F
0.765F
23.5F
ID, DRAIN CURRENT (AMPERES)
Junction
temp. (°C)
Case temperature. (°C)
VDS> ID (ON) x RDS (ON)MAX.
250 µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
300
250
200
TJ = -55°C
150
TJ = +25°C
100
TJ = +125°C
50
0
2
4
6
8
10
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
150
7V
100
6.5V
50
6V
5.5V
0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.40
V
120
100
80
60
40
20
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
2.5
1.30
1.20
1.10
VGS=10V
1.00
VGS=20V
0.90
0.80
0
D
1.10
1.05
1.00
0.95
0.90
= 10V
2.0
1.5
1.0
0.5
0.0
-50
1.15
1.2
= 67.5A
GS
50
100
150
200
250
300
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
-50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
I
V
NORMALIZED TO
= 10V @ 67.5A
GS
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25
50
75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
4-2004
ID, DRAIN CURRENT (AMPERES)
7.5V
200
1.20
140
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
8V
250
050-7159 Rev A
0
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
ID, DRAIN CURRENT (AMPERES)
350
300
0
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
400
APT30M17JFLL
350
Ciss
10,000
100µS
100
50
1mS
TC =+25°C
TJ =+150°C
SINGLE PULSE
10
I
Crss
= 135A
D
VDS= 60V
12
1,000
100
VDS= 150V
VDS= 240V
8
4
0
0
50
100
150
200
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
400
IDR, REVERSE DRAIN CURRENT (AMPERES)
16
Coss
10mS
1
10
100
300
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
APT30M17JFLL
30,000
OPERATION HERE
LIMITED BY RDS (ON)
C, CAPACITANCE (pF)
ID, DRAIN CURRENT (AMPERES)
540
TJ =+150°C
100
TJ =+25°C
10
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
100
250
V
DD
R
G
td(off)
V
150
DD
R
G
tf
T = 125°C
J
80
L = 100µH
= 200V
tr and tf (ns)
td(on) and td(off) (ns)
200
= 200V
= 5Ω
= 5Ω
T = 125°C
J
L = 100µH
100
60
40
tr
20
50
td(on)
0
40
0
40
60
80
100
120
ID (A)
FIGURE 14, DELAY TIMES vs CURRENT
80
100
120
ID (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
1500
6,000
V
I
SWITCHING ENERGY (µJ)
4-2004
050-7159 Rev A
900
Eon
Eoff
600
V
DD
R
G
= 200V
= 5Ω
T = 125°C
300
J
L = 100µH
SWITCHING ENERGY (µJ)
5,000
1200
60
DD
D
= 200V
= 50A
T = 125°C
J
L = 100µH
E ON includes
4,000
Eoff
diode reverse recovery.
3,000
2,000
Eon
1,000
E ON includes
0
40
diode reverse recovery.
50
60
70
80
90 100 110 120
ID (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
0
0
5
10 15 20 25 30 35 40 45 50
RG, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
Typical Performance Curves
APT30M17JFLL
90%
10%
Gate Voltage
Gate Voltage
TJ125°C
td(off)
td(on)
tr
5%
tf
Drain Current
90%
Drain Voltage
90%
10%
0
5%
10%
T 125°C
J
Drain Voltage
Switching Energy
Drain Current
Switching Energy
Figure 19, Turn-off Switching Waveforms and Definitions
Figure 18, Turn-on Switching Waveforms and Definitions
APT30DF60
V DD
IC
V CE
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
SOT-227 (ISOTOP®) Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
25.2 (0.992)
0.75 (.030) 12.6 (.496) 25.4 (1.000)
0.85 (.033) 12.8 (.504)
4.0 (.157)
4.2 (.165)
(2 places)
3.3 (.129)
3.6 (.143)
14.9 (.587)
15.1 (.594)
1.95 (.077)
2.14 (.084)
* Source
30.1 (1.185)
30.3 (1.193)
Drain
* Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
38.0 (1.496)
38.2 (1.504)
* Source
Gate
Dimensions in Millimeters and (Inches)
ISOTOP® is a Registered Trademark of SGS Thomson.
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
4-2004
r = 4.0 (.157)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
050-7159 Rev A
7.8 (.307)
8.2 (.322)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)