NEC NE33200M Super low noise hj fet Datasheet

SUPER LOW NOISE HJ FET
FEATURES
NE33200
NOISE FIGURE & ASSOCIATED
GAIN vs. FREQUENCY
VDS = 2 V, IDS = 10 mA
• GATE LENGTH: 0.3 µm
• GATE WIDTH: 280 µm
DESCRIPTION
The NE33200 is a Hetero-Junction FET chip that utilizes the
junction between Si-doped AlGaAs and undoped InGaAs to
create a two-dimensional electron gas layer with very high
electron mobility. Its excellent low noise figure and high
associated gain make it suitable for commercial and industrial
applications.
Optimum Noise Figure, NFOPT (dB)
4
• HIGH ASSOCIATED GAIN:
10.5 dB Typical at 12 GHz
24
21
3.5
Ga
3
18
2.5
15
2
12
1.5
9
1
Associated Gain, GA (dB)
• VERY LOW NOISE FIGURE:
0.75 dB typical at 12 GHz
6
NF
3
0.5
0
0
1
10
30
Frequency, f (GHz)
NEC's stringent quality assurance and test procedures assure the highest reliability and performance.
ELECTRICAL CHARACTERISTICS
(TA = 25°C)
PART NUMBER
NE33200
PACKAGE OUTLINE
SYMBOLS
NFOPT1
GA 1
P1dB
G1dB
IDSS
PARAMETERS AND CONDITIONS
00 (Chip)
UNITS
Noise Figure, VDS = 2 V, ID = 10 mA,
f = 4 GHz
f = 12 GHz
dB
dB
Associated Gain, VDS = 2 V, ID = 10 mA,
f = 4 GHz
f = 12 GHz
dB
dB
Output Power at 1 dB Gain Compression Point, f = 12 GHz
VDS = 2 V, IDS = 10 mA
VDS = 2 V, IDS = 20 mA
MIN
9.5
TYP
MAX
0.35
0.75
1.0
15.0
10.5
dBm
dBm
11.2
12.0
Gain at P1dB, f = 12 GHz
VDS = 2 V, IDS = 10 mA
VDS = 2 V, IDS = 20 mA
dB
dB
11.8
12.8
Saturated Drain Current, VDS = 2 V, VGS = 0 V
mA
15
40
80
VP
Pinch-off Voltage, VDS = 2 V, ID = 100 µA
V
-2.0
-0.8
-0.2
gm
Transconductance, VDS = 2 V, ID = 10 mA
mS
45
Gate to Source Leakage Current, VGS = -5 V
µA
IGSO
RTH(CH-C)2
Thermal Resistance (Channel to Case)
°C/W
70
0.5
10
240
Notes:
1. RF performance is determined by packaging and testing 10 samples per wafer. Wafer rejection criteria for standard devices is 2 rejects for
10 samples.
2. Chip mounted on infinite heat sink.
California Eastern Laboratories
NE33200
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
TYPICAL NOISE PARAMETERS1 (TA = 25°C)
VDS = 2 V, IDS = 10 mA
SYMBOLS
PARAMETERS
UNITS
RATINGS
FREQ.
NFOPT
GA
VDS
Drain to Source Voltage
V
4.0
(GHz)
(dB)
(dB)
MAG
ANG
VGS
Gate to Source Voltage
V
-3.0
1
0.29
21.3
0.82
8
0.39
IDS
Drain Current
mA
IDSS
2
0.31
18.3
0.81
17
0.36
IGRF
Gate Current
µA
280
4
0.35
15.3
0.76
41
0.33
15
6
0.42
13.5
0.71
63
0.30
8
0.52
12.2
0.64
77
0.27
10
0.63
11.3
0.55
95
0.24
12
0.75
10.5
0.48
112
0.22
RF Input (CW)
dBm
TCH
Channel Temperature
°C
175
TSTG
Storage Temperature
°C
-65 to +175
PT2
Total Power Dissipation
mW
240
Note:
1. Operation in excess of any one of these parameters may result in
permanent damage.
2. With chip mounted on infinite heat sink.
TYPICAL PERFORMANCE CURVES
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
200
150
Mounted on
Infinite
Heat sink
100
14
0.9
9.9
0.41
130
0.19
16
1.05
9.3
0.37
144
0.18
18
1.25
8.8
0.35
164
0.15
20
1.5
8.3
0.37
180
0.13
22
1.8
7.9
0.38
-166
0.11
24
2.2
7.6
0.39
-154
0.10
26
2.6
7.3
0.40
-142
0.08
Note:
1. Noise Parameters include Bond Wires:
Gate: Total 2 wires, 1 per bond pad 0.0129" (327 µm)
long each wire.
Drain: Total 2 wires, 1 per bond pad 0.0118" (300 µm)
long each wire.
Source: Total 4 wires, 2 per side, 0.0071" (180 µm)
long each wire.
Wire: 0.0007" (17.8 µm) dia. gold.
NOISE FIGURE and GAIN
vs. DRAIN CURRENT
VDS = 2 V, f = 12 GHz
Noise Figure, NF (dB)
Total Power Dissipation, (PT) mW
250
(TA = 25°C)
50
2.0
16
1.6
14
1.2
12
NF
0.8
10
GA
Tuned at each IDS
0.4
8
Tuned at 10 mA only
0
0
50
100 117
150
200
0
250
6
0
5
Ambient Temperature, TA (°C)
10
15
20
25
30
35
TRANSCONDUCTANCE vs. DRAIN CURRENT
VDS = 2.0 V
50
120
Transconductance, gm (mS)
VGS = 0 V
40
-0.1 V
30
-0.2 V
20
-0.3 V
10
-0.4 V
100
80
60
40
20
-0.5 V
0
0
0
0.5
1
1.5
2
Drain to Source Voltage,
2.5
VDS (V)
40
Drain Current, IDS (mA)
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
Drain Current, IDS (mA)
Rn/50
3
0
10
20
30
40
Drain Current, IDS (mA)
50
Associated Gain, GA (dB)
PIN
ΓOPT
NE33200
TYPICAL COMMON SOURCE SCATTERING PARAMETERS1 (TA = 25°C)
+90˚
j50
j25
+60˚
+120˚
j100
+30˚
+150˚
j10
0
26.5 GHz
10
25
50
26.5 GHz
100
S22
.1 GHz
S11
.1 GHz
S21
.1 GHz
S12
.1 GHz
0˚
26.5 GHz
26.5 GHz
-j10
-30˚
-150˚
-j25
-j100
-60˚
-120˚
-90˚
-j50
VDS = 2 V, IDS = 10 mA
FREQUENCY
S11
S21
(GHz)
MAG
ANG
0.1
0.2
0.5
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
12.0
14.0
16.0
18.0
20.0
22.0
24.0
26.0
26.5
.999
.999
.998
.994
.974
.940
.903
.861
.822
.798
.750
.728
.724
.722
.724
.714
.695
.676
.665
.648
.632
.641
-1.8
-3.6
-8.9
-17.7
-34.6
-49.9
-63.2
-75.1
-85.9
-93.2
-102.2
-110.1
-117.8
-132.6
-146.6
-158.3
-169.5
-179.4
168.5
158.1
147.8
145.0
S12
MAG
ANG
MAG
5.854
5.850
5.846
5.797
5.614
5.299
4.919
4.512
4.210
3.900
3.642
3.420
3.304
3.045
2.876
2.668
2.483
2.296
2.115
1.897
1.817
1.832
178.8
177.2
173.5
167.0
154.1
142.1
131.1
121.4
112.5
105.5
97.8
89.9
83.8
69.8
57.2
46.2
35.7
26.5
13.7
0.4
-12.1
-14.3
.003
.005
.011
.022
.044
.063
.079
.089
.099
.103
.103
.104
.109
.115
.120
.125
.132
.143
.153
.163
.167
.168
S22
ANG
87.5
86.2
84.6
82.0
71.2
62.4
52.5
46.4
39.7
35.2
27.7
23.9
21.9
14.7
4.9
-2.4
-9.8
-10.5
-14.9
-17.7
-19.9
-18.3
MAG
.631
.632
.632
.628
.618
.598
.578
.556
.532
.528
.495
.479
.468
.433
.398
.376
.373
.394
.401
.388
.378
.372
K
S21
MAG2
0.05
0.04
0.02
0.00
0.04
0.09
0.17
0.23
0.29
0.35
0.48
0.55
0.54
0.56
0.57
0.61
0.66
0.66
0.68
0.75
0.79
0.76
(dB)
15.3
15.4
15.3
15.3
15.0
14.5
13.8
13.1
12.5
11.8
11.2
10.7
10.4
9.7
9.2
8.5
7.9
7.2
6.5
5.5
5.2
5.3
(dB)
32.9
30.7
27.3
24.2
21.1
19.2
17.9
17.0
16.3
15.8
15.5
15.2
14.8
14.2
13.8
13.3
12.7
12.1
11.4
10.7
10.4
10.4
ANG
-1.4
-2.5
-6.1
-12.1
-23.8
-34.9
-43.9
-51.5
-59.1
-60.8
-65.1
-69.1
-74.6
-86.7
-101.2
-112.4
-119.5
-124.8
-130.3
-139.5
-148.9
-152.5
VDS = 2 V, IDS = 30 mA
FREQUENCY
S11
(GHz)
MAG
0.1
0.2
0.5
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
12.0
14.0
16.0
18.0
20.0
22.0
24.0
26.0
26.5
.999
.999
.997
.991
.968
.929
.889
.846
.805
.777
.728
.709
.708
.707
.710
.704
.680
.667
.661
.654
.639
.641
See notes on back page.
S21
ANG
-2.0
-3.9
-9.5
-18.8
-36.6
-52.7
-66.4
-78.7
-89.3
-98.8
-107.8
-115.5
-123.2
-137.7
-151.1
-162.7
-173.2
177.0
164.9
153.8
144.0
142.2
S12
MAG
ANG
MAG
7.441
7.436
7.422
7.317
7.041
6.570
6.058
5.518
5.083
4.686
4.335
4.046
3.879
3.551
3.293
3.055
2.835
2.598
2.384
2.141
2.020
2.059
178.7
177.1
173.1
166.4
153.1
140.6
129.9
120.2
111.5
103.6
96.3
88.8
82.9
69.6
57.0
46.0
35.9
27.1
15.4
3.1
-9.2
-11.6
.002
.003
.009
.017
.032
.047
.059
.067
.076
.083
.082
.084
.089
.097
.102
.110
.118
.134
.149
.162
.171
.175
S22
ANG
87.9
86.5
84.7
82.2
72.3
63.9
56.1
50.5
44.2
39.5
32.5
30.6
30.2
23.8
15.7
8.8
2.4
-0.5
-4.0
-6.8
-10.4
-11.7
MAG
.484
.483
.483
.482
.472
.458
.447
.431
.411
.403
.375
.365
.359
.333
.311
.294
.300
.320
.336
.327
.310
.308
K
ANG
-1.1
-2.7
-6.5
-12.8
-24.8
-36.3
-45.3
-52.3
-60.0
-64.1
-67.7
-70.9
-76.6
-89.5
-105.0
-117.1
-124.4
-128.7
-133.8
-141.0
-150.5
-156.2
0.06
0.04
0.04
0.04
0.09
0.16
0.23
0.31
0.38
0.44
0.59
0.65
0.63
0.64
0.65
0.67
0.71
0.69
0.67
0.70
0.75
0.72
S21
MAG2
(dB)
(dB)
17.4
17.4
17.4
17.3
16.9
16.3
15.6
14.8
14.1
13.4
12.7
12.1
11.8
11.0
10.4
9.7
9.1
8.3
7.5
6.6
6.1
6.3
35.7
33.9
29.2
26.3
23.4
21.4
20.1
19.1
18.2
17.5
17.2
16.8
16.4
15.6
15.1
14.4
13.8
12.9
12.0
11.2
10.7
10.7
NE33200
TYPICAL COMMON SOURCE, REVERSE CHANNEL SCATTERING PARAMETERS1 (TA = 25°C)
j50
+90˚
j25
+60˚
+120˚
j100
+30˚
+150˚
j10
26.5 GHz
10
0
25
50
S22
.1 GHz
S11
.1 GHz
100
S21
.1 GHz
+180
˚
–
26.5 GHz
0˚
S12
.1 GHz
26.5 GHz
26.5 GHz
-30˚
-150˚
-j25
-j100
-60˚
-120˚
-90˚
-j50
VDS = -2 V, IDS = 10 mA
FREQUENCY
(GHz)
0.1
0.2
0.5
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
12.0
14.0
16.0
18.0
20.0
22.0
24.0
26.0
26.5
S11
MAG
0.998
0.999
0.998
1.000
0.998
0.997
0.992
0.987
0.979
0.965
0.960
0.955
0.954
0.968
0.982
0.986
0.970
0.962
0.978
1.039
1.109
1.112
S21
ANG
-0.8
-1.6
-3.8
-7.7
-15.3
-22.
-29.5
-36.3
-42.9
-48.9
-55.1
-60.7
-66.6
-77.1
-87.3
-98.1
-108.8
-120.3
-130.6
-141.1
-152.1
-154.7
MAG
1.492
1.490
1.489
1.480
1.480
1.474
1.464
1.439
1.428
1.390
1.379
1.320
1.323
1.298
1.301
1.302
1.268
1.199
1.119
1.071
1.076
1.068
ANG
-0.5
-1.3
-3.1
-5.9
-11.9
-17.9
-23.8
-29.2
-34.7
-40.2
-46.4
-52.2
-56.2
-66.4
-75.6
-85.8
-95.9
-104.0
-113.2
-123.5
-137.0
-140.6
S12
MAG
.003
.005
.013
.024
.051
.075
.101
.127
.151
.172
.191
.212
.243
.295
.348
.395
.453
.484
.518
.545
.574
.569
S22
ANG
93.9
86.2
89.7
88.7
80.6
78.3
73.5
69.2
64.8
59.2
55.5
51.8
47.2
36.7
24.6
12.1
1.1
-7.5
-16.8
-23.7
-33.5
-36.8
MAG
.586
.587
.585
.588
.585
.582
.577
.573
.575
.573
.573
.574
.577
.578
.571
.530
.493
.465
.467
.497
.485
.477
ANG
179.5
179.3
177.7
175.6
171.0
167.0
162.7
158.5
154.5
151.1
147.3
143.4
137.8
125.1
111.9
99.8
90.0
80.7
67.9
55.5
40.8
37.3
K
S21
MAG2
0.25
0.12
0.05
-0.03
0.02
0.01
0.04
0.06
0.09
0.15
0.17
0.18
0.16
0.13
0.11
0.14
0.21
0.20
0.14
-0.00
-0.11
-0.11
(dB)
3.5
3.5
3.4
3.4
3.4
3.4
3.3
3.2
3.1
2.9
2.8
2.4
2.4
2.3
2.3
2.3
2.1
1.6
1.0
0.6
0.6
0.6
(dB)
27.0
24.7
20.6
17.9
14.6
12.9
11.6
10.5
9.7
9.1
8.6
7.9
7.4
6.4
5.7
5.2
4.5
3.9
3.0
2.9
2.7
2.7
K
S21
MAG2
(dB)
(dB)
3.9
3.9
3.9
3.9
3.9
3.8
3.8
3.7
3.6
3.4
3.3
2.9
2.9
2.8
2.8
2.8
2.6
2.1
1.4
1.0
1.0
1.0
29.0
25.0
21.2
18.5
15.6
13.7
12.5
11.4
10.6
9.8
9.3
8.6
8.0
7.1
6.3
5.8
5.1
4.5
3.8
3.4
3.2
3.2
VDS = -2 V, IDS = 30 mA
FREQUENCY
S11
(GHz)
MAG
0.1
0.2
0.5
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
12.0
14.0
16.0
18.0
20.0
22.0
24.0
26.0
26.5
0.999
1.000
0.998
0.997
0.998
0.998
0.993
0.990
0.982
0.966
0.964
0.961
0.961
0.974
0.990
0.998
0.985
0.982
0.995
1.056
1.132
1.123
See notes on back page.
S21
ANG
-0.7
-1.5
-3.6
-7.4
-14.7
-21.6
-28.3
-34.8
-41.3
-48.0
-54.4
-59.9
-65.9
-76.3
-86.5
-97.1
-107.9
-119.1
-129.7
-140.0
-150.8
-153.5
MAG
ANG
1.574
1.575
1.569
1.565
1.562
1.558
1.550
1.525
1.518
1.472
1.463
1.395
1.401
1.376
1.378
1.383
1.350
1.273
1.173
1.121
1.118
1.119
-0.3
-1.3
-2.9
-6.1
-12.0
-17.8
-23.6
-28.9
-34.4
-39.7
-46.0
-52.0
-56.2
-65.7
-75.6
-85.8
-96.1
-104.0
-112.5
-122.6
-135.6
-139.9
S12
MAG
.002
.005
.012
.022
.043
.066
.087
.110
.132
.155
.172
.193
.220
.268
.319
.364
.417
.448
.485
.513
.537
.539
S22
ANG
135.9
96.9
87.2
87.9
82.0
79.8
75.1
71.7
67.0
61.7
57.8
55.0
51.0
40.8
28.9
17.1
6.0
-2.0
-11.7
-18.5
-27.8
-30.6
MAG
.687
.686
.687
.685
.684
.685
.680
.678
.680
.677
.680
.684
.690
.700
.696
.651
.612
.582
.582
.611
.606
.584
ANG
179.7
179.2
177.8
175.9
171.3
167.5
164.0
159.7
156.3
153.1
149.6
145.7
140.6
128.7
116.0
104.3
95.2
87.1
74.2
61.8
48.3
45.2
-0.33
-0.09
0.06
0.02
0.01
-0.01
0.03
0.02
0.06
0.11
0.13
0.13
0.10
0.07
0.07
0.10
0.17
0.15
0.08
-0.07
-0.18
-0.15
NE33200
NE33200 LINEAR MODEL
SCHEMATIC
LG
0.19
RG
CDG
0.16
0.04
GATE
GGS
1E-5
RD
0.24
0.22
CDC
0.065
RDS
g
t
f= 281GHz
CDS
0.05
RS
0.19
LS
0.03
SOURCE
BIAS DEPENDENT MODEL PARAMETERS
g
2 V, 10 mA
73 mS
t
RDS
2 V, 20 mA
96 mS
2.5 pSec
3.5 pSec
220 ohms
160 ohms
UNITS
MODEL RANGE
Parameter
capacitance
inductance
resistance
conductance
0.2
DRAIN
CGS
RI
0.52
Parameters
LD
Units
picofarads
nanohenries
ohms
millisiemans
Frequency:
Bias:
Date:
0.1 to 26.5 GHz
VDS = 2 V, ID = 10, 20 mA
7/19/96
NE33200
NE33200 NONLINEAR MODEL
SCHEMATIC
LG
2
GATE
LD
5
0.08
DRAIN
1
Q1
RD
R COMP
270
0.17
3
CRF X
10000
RS
1
LS
0.03
SOURCE
FET NONLINEAR MODEL PARAMETERS (1)
Parameters
Q1
Parameters
Q1
BETA
0.0989
CGD
0
VTO
-0.6
KF
0
ALPHA
8
AF
1
LAMBDA
0.2
TNOM
27
THETA2
0
XTI
3
TAU
4e-12
EG
1.43
VBR
Infinity
VTOTC
0
IS
8e-14
BETATCE
0
FFE
1
N
1
VBI
1
FC
0.5
RC
Infinity
CRF
0
RD
0
RG
0
RS
0
RIN
0
CGSO3
0.4e-12
CGDO4
0.05e-12
DELTA1
0.3
DELTA25
0.5
CDS
0.16e-12
CGS
0
(1) Series IV Libra TOM Model
The parameter in Libra corresponds to the parameter in PSpice:
(2) THETA
B
(3) CGSO
CGS
(4) CGDO
CGD
(5) DELTA2
VDELTA
UNITS
Parameter
capacitance
inductance
resistance
Units
picofarads
nanohenries
ohms
MODEL RANGE
Frequency:
Bias:
Date:
0.1 to 10 GHz
VDS = 2 V, ID = 10 mA to 20 mA
8/6/96
NE33200
CHIP DIMENSIONS (Units in µm)
ORDERING INFORMATION
PART NUMBER
NE33200 (CHIP)
NE33200
400±40 mm
120
IDSS RANGE (mA)
Standard (15 - 80)
NE33200N
15 - 50
NE33200M
50 - 80
56
66
56
D
D
350±35
G
S
G
61
S
88
45
31 47
25
13
Chip Thickness: 140 µm typical
Note: All dimensions are typical unless otherwise specified
Notes:
1. S-Parameters include Bond Wires:
Gate: Total 2 wires, 1 per bond pad 0.0129" (327 µm) long, each wire.
Drain: Total 2 wires, 1 per bond pad 0.0118" (300 µm) long, each wire.
Source: Total 4 wires, 2 per side, 0.0071" (180 µm) each wire.
Wire: 0.0007" (17.8 µm) dia. gold.
2.
Gain Calculations:
MAG =
|S21|
|S12|
(K ±
K 2- 1
). When K ≤ 1, MAG is undefined and MSG values are used. MSG =
2
2
2
|S21|
, K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12
|S12|
2 |S12 S21|
MAG = Maximum Available gain
MSG = Maximum Stable Gain
EXCLUSIVE NORTH AMERICAN AGENT FOR
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM
04/12/2001
DATA SUBJECT TO CHANGE WITHOUT NOTICE