TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/544 Devices Qualified Level 2N5152 2N5152L JAN JANTX JANTXV 2N5154 2N5154L MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +250C(1) @ TC = +250C(2) Operating & Storage Temperature Range Symbol All Units Units VCEO VCBO VEBO IC(3, 4) 80 100 5.5 2.0 1.0 11.8 -65 to +200 Vdc Vdc Vdc Adc W W °C PT Tj, Tstg TO- 5* 2N5152L, 2N5154L THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly 5.7 mW/0C for TA > +250C 2) Derate linearly 66.7 mW/0C for TC > +250C 3) Derate linearly 80 mW/0C for TC > +250C 4) This value applies for PW ≤ 8.3 ms, duty cycle ≤ 1% Symbol RθJC Max. 15 Unit C/W 0 2N5152, 2N5154 TO-39* (TO-205AD) *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics Symbol Min. V(BR)CEO 80 Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 100 mAdc, IB = 0 Emitter-Base Cutoff Current VEB = 4.0 Vdc, IC = 0 VEB = 5.5 Vdc, IC = 0 Collector-Emitter Cutoff Current VCE = 60 Vdc, VBE = 0 VCE = 100 Vdc, VBE = 0 Collector-Base Cutoff Current VCE = 40 Vdc, IB = 0 Vdc IEBO 1.0 1.0 µAdc mAdc ICES 1.0 1.0 µAdc mAdc ICEO 50 µAdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 2 2N5152, 2N5154 JAN SERIES ELECTRICAL CHARACTERISTICS (con’t) Characteristics Symbol Min. Max. Unit ON CHARACTERISTICS Forward Current Transfer Ratio IC = 50 mAdc, VCE = 5 Vdc 20 50 2N5152 2N5154 IC = 2.5 Adc, VCE = 5 Vdc 2N5152 2N5154 30 70 hFE IC = 5 Adc, VCE = 5 Vdc 20 40 2N5152 2N5154 Collector-Emitter Saturation Voltage VCE = 5 Vdc, IC = 2.5 Adc IC = 5 Adc, IB = 500 Adc Base-Emitter Voltage non-saturated IC = 2.5 Adc, IB = 250 mAdc IC = 5 Adc, IB = 500 mAdc Base-Emitter Saturation Voltage IC = 2.5 Adc, IB = 250 mAdc IC = 5 Adc, IB = 500 mAdc 90 200 VCE(sat) 0.75 1.5 Vdc VBE 1.45 Vdc VBE(sat) 1.45 2.2 Vdc 250 pF on 0.5 µs off 1.5 µs t 1.4 0.5 µs µs DYNAMIC CHARACTERISTICS Magnitude of Common Emitter Small-Signal Short Circuit Forward-Current Transfer Ratio IC = 500 mAdc, VCE = 5 Vdc, f = 10 MHz 2N5152 2N5154 Small-Signal Short Circuit Forward-Current Transfer Ratio IC = 100 mAdc, VCE = 5 Vdc, f = 1 kHz 2N5152 2N5154 Output Capacitance VCB = 10 Vdc, IE = 0, f = 1.0 MHz hfe 6 7 hfe 20 50 Cobo SWITCHING CHARACTERISTICS Turn-On Time IC = 5 Adc, IB1= 500 mAdc Turn-Off Time RL = 6Ω Storage Time IB2= -500 mAdc Fall Time V BE(OFF) = 3.7 Vdc t t s f t SAFE OPERATING AREA DC Tests TC = +250C, 1 Cycle, t p= 1.0 s Test 1 VCE = 5.8Vdc, IC = 2.0 Adc Test 2 VCE = 32 Vdc, IC = 340 mAdc Test 3 VCE = 80 Vdc, IC = 20 mAdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 2 of 2