Taychipst EGF20M Super fast rectifier Datasheet

EGF20A THRU EGF20M
50V-1000V 2.0A
SUPER FAST RECTIFIER
FEATURES
GPRC( Glass Passivated Rectifier Chip) inside
Glass passivated cavity-free junction
For Surface Mount Applications
Easy to pick and place
Low forward voltage drop,High current capability
High surge current capability
Super fast recovery time
Plastic package has Underwriters Laboratory Flammability
Classification 94V-0
MECHANICAL DATA
Case : JEDEC DO-214AA molded plastic over passivated chip
Terminals : Solder plated , solderable per MIL-STD-750,
Method 2026
Polarity : Color band denotes cathode end
Mounting Position : Any
Weight : 0.003 ounes , 0.093 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Rating at 25 C ambient temperature unless otherwise specified ,Single phase ,half wave ,60HZ,resistive or inductive
load. For capacitive load,derate current by 20%.)
Symbols
EGF
20A
EGF
20B
EGF
20D
EGF
20F
EGF
20G
EGF
20J
EGF
20K
EGF
20M
50
100
200
300
400
600
800
1000
480
700
800
1000
Maximum DC Blocking Voltage
VRRM
VRMS
VDC
Maximum Average Forward Rectified Current
0.375"(9.5mm)lead Length at Ta=55 C
I(AV)
Peak Forward Surge Current 8.3ms single half
sine-wave superimposed on rated load
(JEDEC method)
IFSM
65.0
VF
0.95
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum Instantaneous Forward Voltage
at 1.0 A
Maximum DC Reverse
Current At Rated DC
Blocking Voltage
TA=25 C
35
70
140
210
280
420
50
100
200
300
400
600
Volts
Volts
Volts
Amp
2.0
1.25
60.0
Amps
1.7
Volts
5.0
IR
A
100
TA=100 C
Typical Junction Capacitance(Note2)
Trr
CJ
Operating Junction and Storage Temperature
Range
TJ
TSTG
Maximum Reverse Recovery Time(Note1)
Units
50
75
45
-65 to+125
-65 to+150
ns
PF
C
Note: 1.Test conditions: IF=0.5A,IR=1.0A,IRR=0.25A.
2.Measured at 1MHZ and applied reverse voltage of 4.0 Volts.
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EGF20A THRU EGF20M
50V-1000V 2.0A
SUPER FAST RECTIFIER
RATINGS AND CHARACTERISTICS CURVES
FIG.2 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
FIG.1 - FORWARD CURRENT DERATING CURVE
70
PEAK FORWARD SURGE CURRENT,
AMPERES
AVERAGE FORWARD RECTIFIED
CURRENT, AMPERES
2.0
RESISTIVE OR
INDUCTIVE LOAD
1.5
EGF20A~EGF20G
1.0
EGF20J~EGF20M
0.5
0
TJ=TJ max.
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
60
50
EGF20A~EGF20G
40
EGF20J~EGF20M
30
20
10
0
0
25
50
75
100
125
150
1
175
10
AMBIENT TEMPERATURE, C
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
FIG.3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
100
PULSE WIDTH=300uS
1% DUTY CYCLE
INSTANTANEOUS REVERSE LEAKAGE
CURRENT, MICROAMPERES
IINSTANTANEOUS FORWARD CURRENT,
AMPERES
10.00
1.00
0.10
0.01
0.2
EGF20J~EGF20M
EGF20G
EGF20A~EGF20F
0.4
0.6
0.8
1.0
1.2
1.4
1.6
10
1
o
TJ=125 C
o
TJ=150 C
0.1
0
TRANSIENT THERMAL IMPEDANCE( C/W)
o
60
40
20
10
6
4
2
1
.4
1.0
2
4
10
20
40
100
REVERSE VOLTAGE, VOLTS
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60
80
100 110
FIG.6 - TYPICAL TRANSIENT THERMAL IMPEDANCE
100
o
TJ = 25 C
100
.2
40
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
FIG.5 - TYPICAL JUNCTION CAPACITANCE
200
20
1.8
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
.1
100
NUMBER OF CYCLES AT 60Hz
o
JUNCTION CAPACITANCE, pF
EGF20A THRU EGF20M
10
1
0.1
0.01
0.10
1.0
10
100
t , PULSE DURATION, sec
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