MSA-0736 Cascadable Silicon Bipolar MMIC Amplifier Data Sheet Description Features The MSA-0736 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a cost effective, microstrip package. This MMIC is designed for use as a general purpose 50Ω gain block. Typical applications include narrow and broad band IF and RF amplifiers in industrial and military applications. • Cascadable 50Ω Gain Block • Low Operating Voltage: 4.0 V Typical Vd • 3 dB Bandwidth: DC to 2.4 GHz • 13.0 dB Typical Gain at 1.0 GHz • Unconditionally Stable (k>1) • Cost Effective Ceramic Microstrip Package The MSA-series is fabricated using Avago’s 10 GHz fT, 25 GHz fMAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. 36 micro-X Package Typical Biasing Configuration R bias VCC > 5 V RFC (Optional) 4 C block C block 3 IN 1 OUT MSA 2 Vd = 4.0 V 2 MSA-0736 Absolute Maximum Ratings Absolute Maximum[1] 60 mA 275 mW +13 dBm 150°C –65 to 150°C Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature Thermal Resistance[2,5]: θjc = 155°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25°C. 3. Derate at 6.5 mW/°C for TC > 157°C. 4. Storage above +150°C may tarnish the leads of this package making it difficult to solder into a circuit. 5. Ths small spot size of this technique results in a higher, though more accurate determination of θjc than do alternate methods. Electrical Specifications[1], TA = 25°C Symbol Parameters and Test Conditions: Id = 22 mA, ZO = 50 Ω GP Power Gain (|S21 ∆GP Gain Flatness f3 dB 3 dB Bandwidth VSWR | 2) Units Min. f = 0.1 GHz dB 12.5 f = 0.1 to 1.3 GHz dB GHz Input VSWR f = 0.1 to 2.5 GHz Output VSWR f = 0.1 to 2.5 GHz NF 50 Ω Noise Figure f = 1.0 GHz Typ. Max. 13.5 14.5 ±0.6 ±1.0 2.4 2.0:1 1.8:1 dB 4.5 P1 dB Output Power at 1 dB Gain Compression f = 1.0 GHz dBm 5.5 IP3 Third Order Intercept Point f = 1.0 GHz dBm 19.0 tD Group Delay f = 1.0 GHz psec Vd Device Voltage dV/dT Device Voltage Temperature Coefficient V mV/°C 140 3.6 4.0 4.4 –7.0 Note: 1. The recommended operating current range for this device is 15 to 40 mA. Typical performance as a function of current is on the following page. Ordering Information Part Numbers No. of Devices Comments MSA-0736-BLKG 100 Bulk MSA-0736-TR1G 1000 7" Reel 3 MSA-0736 Typical Scattering Parameters (ZO = 50 Ω, TA = 25°C, Id = 22 mA) S11 Freq. GHz Mag 0.1 0.2 0.4 0.6 0.8 1.0 1.5 2.0 2.5 3.0 3.5 4.0 5.0 6.0 .13 .13 .14 .16 .19 .21 .27 .32 .37 .43 .47 .49 .51 .60 S21 S12 S22 Ang dB Mag Ang dB Mag Ang Mag Ang –3 –6 –13 –20 –29 –40 –71 –107 –134 –160 –179 167 134 96 13.5 13.4 13.4 13.3 13.2 12.9 12.2 11.5 10.3 8.8 7.5 6.2 4.0 2.1 4.71 4.69 4.68 4.64 4.60 4.42 4.07 3.74 3.26 2.76 2.37 2.05 1.59 1.27 175 170 160 150 140 129 104 79 62 44 27 12 –15 –42 –19.0 –18.5 –18.6 –18.4 –18.1 –17.6 –16.5 –15.6 –15.3 –15.4 –15.3 –15.2 –15.2 –14.6 .112 .119 .118 .120 .125 .131 .149 .165 .173 .171 .173 .168 .173 .185 2 3 6 7 8 10 10 7 5 0 –4 –6 –11 –16 .29 .29 .29 .28 .28 .27 .24 .19 .15 .14 .16 .21 .28 .29 –7 –12 –24 –35 –47 –58 –83 –103 –113 –120 –120 –121 –135 –167 Typical Performance, TA = 25°C (unless otherwise noted) 40 Gain Flat to DC 12 30 8 Id (mA) G p (dB) 10 6 16 TC = +125°C TC = +25°C TC = –55°C G p (dB) 14 20 12 2.0 GHz 10 10 2 6 0 0 0.1 0.3 0.5 1.0 3.0 6.0 4 0 1 2 FREQUENCY (GHz) 3 4 10 5 6.0 I d = 40 mA 12 GP 4 6 P1 dB I d = 15 mA I d = 22 mA I d = 40 mA 9 6 NF (dB) 5 P1 dB (dBm) 5.5 6 NF (dB) NF 40 Figure 3. Power Gain vs. Current. 15 13 30 I d (mA) Figure 2. Device Current vs. Voltage. 14 12 20 Vd (V) Figure 1. Typical Power Gain vs. Frequency, Id = 22 mA. G p (dB) 0.1 GHz 0.5 GHz 1.0 GHz 8 4 P1 dB (dBm) 14 I d = 22 mA 5.0 3 4.5 5 0 4 3 –55 –25 I d = 15 mA +25 +85 +125 –3 0.1 4.0 0.2 0.3 0.5 1.0 2.0 4.0 0.1 0.2 0.3 0.5 1.0 2.0 TEMPERATURE (°C) FREQUENCY (GHz) FREQUENCY (GHz) Figure 4. Output Power at 1 dB Gain Compression, NF and Power Gain vs. Case Temperature, f = 1.0 GHz, Id = 22 mA. Figure 5. Output Power at 1 dB Gain Compression vs. Frequency. Figure 6. Noise Figure vs. Frequency. 36 micro-X Package Dimensions 2.15 (0.085) SOURCE 2.11 (0.083) DIA. 4 DRAIN 3 GATE 1 SOURCE 1.45 ± 0.25 (0.057 ± 0.010) 0.56 (0.022) 2 2.54 (0.100) 0.508 (0.020) 0.15 ± 0.05 (0.006 ± 0.002) 4.57 ± 0.25 0.180 ± 0.010 Notes: 1. Dimensions are in millimeters (inches) 2. Tolerances: in .xxx = ± 0.005 mm .xx = ± 0.13 For product information and a complete list of distributors, please go to our web site: www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Limited in the United States and other countries. Data subject to change. Copyright © 2007 Avago Technologies, Limited. All rights reserved. Obsoletes 5989-2741EN AV02-0305EN - April 12, 2007