ON NTJS4405N Small signal mosfet 25 v, 1.2 a, single, n−channel, sc−88 Datasheet

NTJS4405N
Small Signal MOSFET
25 V, 1.2 A, Single, N−Channel, SC−88
Features
• Advance Planar Technology for Fast Switching, Low RDS(on)
• Higher Efficiency Extending Battery Life
• Pb−Free Packages are Available
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V(BR)DSS
RDS(on) Typ
ID Max
249 mW @ 4.5 V
25 V
1.2 A
299 mW @ 2.7 V
Applications
• Boost and Buck Converter
• Load Switch
• Battery Protection
N−Channel
Drain 1 2 5 6
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
25
V
Gate−to−Source Voltage
VGS
"8.0
V
Rating
Drain Current
t<5s
TA = 25°C
ID
1.2
A
Continuous Drain Current
(Note 1)
Steady
State
TA = 25°C
ID
1.0
A
TA = 75°C
Steady State
PD
0.63
W
Power Dissipation (Note 1)
tv5s
PD
0.89
W
tp = 10 ms
IDM
3.7
A
TJ,
TSTG
−55 to
+150
°C
Source Current (Body Diode) (Note 1)
IS
0.8
A
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
260
°C
250
V
Operating Junction and Storage Temperature
ESD Rating − Machine Model
MARKING DIAGRAM &
PIN ASSIGNMENT
D
D
S
6
1
SC−88/SOT−363
CASE 419B
TS M G
G
1
D
TS
M
G
D
G
= Device Code
= Date Code
= Pb−Free Package
(Note: Microdot may be in either location)
THERMAL RESISTANCE RATINGS
Rating
Source 4
0.80
Power Dissipation (Note 1)
Pulsed Drain Current
Gate 3
Symbol
Max
Unit
Junction−to−Lead – Steady State (Note 1)
RqJL
102
°C/W
Junction−to−Ambient – Steady State (Note 1)
RqJA
200
Junction−to−Ambient − t v 5 s (Note 1)
RqJA
140
ORDERING INFORMATION
Device
NTJS4405NT1
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
NTJS4405NT1G
NTJS4405NT4
NTJS4405NT4G
Package
Shipping†
SC−88
3000 / Tape & Reel
SC−88 3000 / Tape & Reel
(Pb−Free)
SC−88
10,000 / Tape & Reel
SC−88 10,000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 4
1
Publication Order Number:
NTJS4405N/D
NTJS4405N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
25
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
Characteristic
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
IDSS
Gate−to−Source Leakage Current
V
30
VGS = 0 V,
VDS = 20 V
mV/°C
TJ = 25°C
1.0
TJ = 125°C
10
IGSS
VDS = 0 V, VGS = 8.0 V
VGS(TH)
VGS = VDS, ID = 250 mA
mA
100
nA
1.5
V
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
VGS(TH)/TJ
Drain−to−Source On Resistance
RDS(on)
Forward Transconductance
gFS
0.65
−2.0
mV/°C
VGS = 4.5 V, ID = 0.6 A
249
350
VGS = 2.7 V, ID = 0.2 A
299
400
VGS = 4.5 V, ID = 1.2 A
260
VDS = 5.0 V, ID = 0.5 A
0.5
49
60
VGS = 0 V, f = 1.0 MHz,
VDS = 10 V
22.4
30
8.0
12
0.75
1.5
mW
S
CHARGES AND CAPACITANCES
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
VGS = 4.5 V, VDS = 5.0 V,
ID = 0.95 A
pF
nC
0.10
0.30
0.50
QGD
0.20
0.40
td(ON)
6.0
12
4.7
8.0
25
35
41
60
0.82
1.20
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
tr
td(OFF)
VGS = 4.5 V, VDS = 6.0 V,
ID = 0.5 A, RG = 50 W
tf
ns
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
VGS = 0 V,
IS = 0.6 A
TJ = 25°C
2. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
3. Switching characteristics are independent of operating junction temperatures.
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2
V
NTJS4405N
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
4
3.5
4V
3.5 V
VGS = 2.5 V
3
2.5
2
VGS = 2 V
1.5
1
0.5
TJ = 25°C
0
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
2
VGS = 3 V
ID, DRAIN CURRENT (AMPS)
7V
6V
5.5 V
4.5 V
1.0
0.5
1.5
1
2.5
2
3
3.5
4
4.5
1.5
TJ = 125°C
1
0.5
25°C
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
1.5
0.5
1
2
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0
VGS = 4.5 V
0.8
0.6
TJ = 125°C
0.4
TJ = 25°C
0.2
TJ = −55°C
0
1.0
0
2.0
3.0
4.0
ID, DRAIN CURRENT (AMPS)
5.0
0.4
TJ = 25°C
VGS = 2.7 V
VGS = 4.5 V
0.2
0.1
0.2
0.4
1
0.6
0.8
1.2 1.4 1.6
ID, DRAIN CURRENT (AMPS)
1.8
2
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
10000
ID = 0.6 A
VGS = 4.5 V
VGS = 0 V
1000
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
1.6
2.5
0.3
Figure 3. On−Resistance vs. Drain Current and
Temperature
1.8
TJ = −55°C
VDS ≥ 5 V
0
5
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
ID, DRAIN CURRENT (AMPS)
5
4.5
1.4
1.2
1
TJ = 150°C
100
TJ = 125°C
10
0.8
0.6
−50
−25
0
25
50
75
100
125
150
1
0
5
10
15
20
25
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
NTJS4405N
150
VDS = 0 V
C, CAPACITANCE (pF)
125
VGS = 0 V
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
TJ = 25°C
Ciss
100
Crss
75
50
Ciss
25
Coss
0
10
Crss
5
VGS
0
VDS
10
5
15
20
25
5
3
QGS
1
0
ID = 0.95 A
TJ = 25°C
0
0.2
0.4
0.6
Qg, TOTAL GATE CHARGE (nC)
1.2
IS, SOURCE CURRENT (AMPS)
t, TIME (ns)
0.8
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
VDD = 6.0 V
ID = 0.5 A
VGS = 4.5 V
100
tf
td(off)
td(on)
tr
1
1
QGD
2
Figure 7. Capacitance Variation
10
VDS = 5.0 V
4
GATE−TO−SOURCE OR DRAIN−TO−SOURCE
VOLTAGE (VOLTS)
1000
QG(TOT)
VGS = 4.5 V
10
100
1.1
VGS = 0 V
1
0.9
TJ = 25°C
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.2
0.3
RG, GATE RESISTANCE (OHMS)
0.4
0.5
0.6
0.7
0.8
0.9
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
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4
1
NTJS4405N
PACKAGE DIMENSIONS
SC−88/SC70−6/SOT−363
CASE 419B−02
ISSUE W
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419B−01 OBSOLETE, NEW STANDARD 419B−02.
D
e
A3
6
5
4
HE
C
−E−
1
2
DIM
A
A1
A3
b
C
D
E
e
L
HE
3
L
b 6 PL
0.2 (0.008)
M
E
M
MILLIMETERS
MIN
NOM MAX
0.80
0.95
1.10
0.00
0.05
0.10
0.20 REF
0.10
0.21
0.30
0.10
0.14
0.25
1.80
2.00
2.20
1.15
1.25
1.35
0.65 BSC
0.10
0.20
0.30
2.00
2.10
2.20
INCHES
NOM MAX
0.037 0.043
0.002 0.004
0.008 REF
0.004 0.008 0.012
0.004 0.005 0.010
0.070 0.078 0.086
0.045 0.049 0.053
0.026 BSC
0.004 0.008 0.012
0.078 0.082 0.086
MIN
0.031
0.000
A
SOLDERING FOOTPRINT*
A1
0.50
0.0197
0.65
0.025
0.65
0.025
0.40
0.0157
1.9
0.0748
SCALE 20:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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NTJS4405N/D
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