NSS1C201L, NSV1C201L 100 V, 3.0 A, Low VCE(sat) NPN Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications are DC−DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU’s control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers. www.onsemi.com 100 VOLTS, 3.0 AMPS NPN LOW VCE(sat) TRANSISTOR COLLECTOR 3 1 BASE Features • NSV Prefix for Automotive and Other Applications Requiring • Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 2 EMITTER 3 MAXIMUM RATINGS (TA = 25°C) 1 Symbol Max Unit 2 Collector-Emitter Voltage VCEO 100 Vdc Collector-Base Voltage VCBO 140 Vdc SOT−23 (TO−236) CASE 318 STYLE 6 Emitter-Base Voltage VEBO 7.0 Vdc IC 2.0 A ICM 3.0 A Symbol Max Unit Total Device Dissipation TA = 25°C Derate above 25°C PD (Note 1) 490 mW 3.7 mW/°C Thermal Resistance, Junction−to−Ambient RqJA (Note 1) 255 °C/W Total Device Dissipation TA = 25°C Derate above 25°C PD (Note 2) 710 mW 4.3 mW/°C Thermal Resistance, Junction−to−Ambient RqJA (Note 2) 176 °C/W Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C Rating Collector Current − Continuous Collector Current − Peak MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR− 4 @ 100 mm2, 1 oz. copper traces. 2. FR− 4 @ 500 mm2, 1 oz. copper traces. © Semiconductor Components Industries, LLC, 2014 December, 2014 − Rev. 5 1 VT MG G 1 VT = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping† NSS1C201LT1G, NSV1C201LT1G SOT−23 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: NSS1C201L/D NSS1C201L, NSV1C201L ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Characteristic Min Typ Max Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) V(BR)CEO Collector −Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) V(BR)CBO Emitter −Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) V(BR)EBO Vdc 100 Vdc 140 Vdc 7.0 Collector Cutoff Current (VCB = 140 Vdc, IE = 0) ICBO Emitter Cutoff Current (VEB = 6.0 Vdc) IEBO nAdc 100 nAdc 50 ON CHARACTERISTICS hFE DC Current Gain (Note 3) (IC = 10 mA, VCE = 2.0 V) (IC = 500 mA, VCE = 2.0 V) (IC = 1.0 A, VCE = 2.0 V) (IC = 2.0 A, VCE = 2.0 V) 150 120 80 40 Collector −Emitter Saturation Voltage (Note 3) (IC = 0.1 A, IB = 0.01 A) (IC = 0.5 A, IB = 0.05 A) (IC = 1.0 A, IB = 0.100 A) (IC = 2.0 A, IB = 0.200 A) VCE(sat) Base −Emitter Saturation Voltage (Note 3) (IC = 1.0 A, IB = 0.100 A) VBE(sat) Base −Emitter Turn−on Voltage (Note 3) (IC = 1.0 A, VCE = 2.0 V) VBE(on) 240 360 V 0.030 0.060 0.090 0.150 V 0.950 V 0.850 Cutoff Frequency (IC = 100 mA, VCE = 5.0 V, f = 100 MHz) fT MHz 110 Input Capacitance (VEB = 2.0 V, f = 1.0 MHz) Cibo 230 pF Output Capacitance (VCB = 10 V, f = 1.0 MHz) Cobo 14 pF Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%. TYPICAL CHARACTERISTICS PD, POWER DERATING (W) 0.8 0.7 Note 2 0.6 0.5 0.4 Note 1 0.3 0.2 0.1 0 0 20 40 60 80 100 120 TA, AMBIENT TEMPERATURE (°C) Figure 1. Power Derating www.onsemi.com 2 140 NSS1C201L, NSV1C201L TYPICAL CHARACTERISTICS 400 400 VCE = 2 V 150°C 300 25°C 250 200 150 −55°C 100 25°C 250 200 150 −55°C 100 0 0 0.01 0.1 1 0.001 10 1 Figure 2. DC Current Gain Figure 3. DC Current Gain IC/IB = 10 150°C 25°C 0.1 −55°C 0.01 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) IC/IB = 20 150°C 25°C 0.1 −55°C 0.01 0.001 VBE(sat), BASE−EMITTER SATURATION (V) IC/IB = 10 −55°C 0.8 25°C 0.6 150°C 0.4 0.2 0.01 0.1 1 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) Figure 5. Collector−Emitter Saturation Voltage 1.2 1.0 10 1 Figure 4. Collector−Emitter Saturation Voltage 0.001 0.1 IC, COLLECTOR CURRENT (A) 1 0.001 0.01 IC, COLLECTOR CURRENT (A) VCE(sat), COLLECTOR−EMITTER SATURATION (V) 0.001 VCE(sat), COLLECTOR−EMITTER SATURATION (V) 300 50 50 VBE(sat), BASE−EMITTER SATURATION (V) VCE = 4 V 150°C 350 hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN 350 10 1.2 IC/IB = 50 1.0 −55°C 0.8 25°C 0.6 150°C 0.4 0.2 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 6. Base−Emitter Saturation Voltage Figure 7. Base−Emitter Saturation Voltage www.onsemi.com 3 10 NSS1C201L, NSV1C201L 1.2 1 VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) VBE(on), BASE−EMITTER VOLTAGE (V) TYPICAL CHARACTERISTICS VCE = 2 V 1.0 −55°C 0.8 25°C 0.6 150°C 0.4 0.2 0.01 0.1 1 IC = 0.1 A 0.0001 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) IB, BASE CURRENT (A) Figure 8. Base Emitter Voltage Figure 9. Collector Saturation Region 50 COB, OUTPUT CAPACITANCE (pF) CIB, INPUT CAPACITANCE (pF) 0.5 A 0.1 10 400 TJ = 25°C fTEST = 1 MHz 350 300 250 200 150 100 50 0 0 1 2 3 4 5 6 7 45 TJ = 25°C fTEST = 1 MHz 40 35 30 25 20 15 10 5 0 0 8 10 20 30 40 50 60 70 80 VEB, EMITTER BASE VOLTAGE (V) VCB, COLLECTOR BASE VOLTAGE (V) Figure 10. Input Capacitance Figure 11. Output Capacitance 140 90 100 10 TJ = 25°C fTEST = 1 MHz VCE = 2 V IC, COLLECTOR CURRENT (A) fTau, CURRENT GAIN BANDWIDTH (MHz) 1A 0.01 0.001 120 3A 2A 100 80 60 40 20 0 10 mS 1 mS 100 mS 1 Thermal Limit 0.1 0.01 0.001 0.01 0.1 1 0.1 1 10 IC, COLLECTOR CURRENT (A) VCE, COLLECTOR EMITTER VOLTAGE (V) Figure 12. Current−Gain Bandwidth Product Figure 13. Safe Operating Area www.onsemi.com 4 100 NSS1C201L, NSV1C201L 1000 D = 0.5 R(t), (°C/W) 100 D = 0.2 D = 0.1 D = 0.05 10 D = 0.02 D = 0.01 1 0.1 0.000001 Single Pulse 0.00001 0.0001 0.001 0.01 0.1 t, PULSE TIME (s) Figure 14. Transient Thermal Resistnce www.onsemi.com 5 1.0 10 100 1000 NSS1C201L, NSV1C201L PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AP NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. D SEE VIEW C 3 HE E DIM A A1 b c D E e L L1 HE q c 1 2 b 0.25 e q A L A1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 0° INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 10° STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR L1 VIEW C SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. 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