APT8011JLL
800V 51A 0.110Ω
POWER MOS 7
R
S
S
MOSFET
27
2
T-
D
G
®
Power MOS 7 is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
®
losses are addressed with Power MOS 7 by significantly lowering RDS(ON)
®
and Qg. Power MOS 7 combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
SO
"UL Recognized"
ISOTOP ®
D
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
• Increased Power Dissipation
• Easier To Drive
• Popular SOT-227 Package
MAXIMUM RATINGS
Symbol
VDSS
ID
G
S
All Ratings: TC = 25°C unless otherwise specified.
Parameter
Drain-Source Voltage
APT8011JLL
UNIT
800
Volts
51
Continuous Drain Current @ TC = 25°C
1
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
VGSM
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
694
Watts
Linear Derating Factor
5.56
W/°C
PD
TJ,TSTG
204
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
EAR
EAS
1
-55 to 150
Amps
51
1
Single Pulse Avalanche Energy
°C
300
(Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
Volts
50
4
mJ
3600
STATIC ELECTRICAL CHARACTERISTICS
MIN
BVDSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
800
RDS(on)
Drain-Source On-State Resistance
IDSS
IGSS
VGS(th)
2
(VGS = 10V, 25.5A)
TYP
MAX
Volts
0.110
Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V)
100
Zero Gate Voltage Drain Current (VDS = 640V, VGS = 0V, TC = 125°C)
500
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 5mA)
Ohms
µA
±100
nA
5
Volts
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
UNIT
2-2004
Characteristic / Test Conditions
050-7093 Rev A
Symbol
DYNAMIC CHARACTERISTICS
Symbol
APT8011JLL
Test Conditions
Characteristic
MIN
TYP
Ciss
Input Capacitance
Coss
Output Capacitance
VDS = 25V
1890
Reverse Transfer Capacitance
f = 1 MHz
340
VGS = 10V
650
VDD = 400V
100
C rss
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain ("Miller ") Charge
td(on)
Turn-on Delay Time
tr
ID = 51A @ 25°C
tf
23
VDD = 400V
ID = 51A @ 25°C
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
19
INDUCTIVE SWITCHING @ 25°C
6
1390
VDD = 533V, VGS = 15V
ID = 51A, RG = 5Ω
1545
INDUCTIVE SWITCHING @ 125°C
6
ns
83
RG = 0.6Ω
Fall Time
nC
23
VGS = 15V
Turn-off Delay Time
pF
525
RESISTIVE SWITCHING
Rise Time
td(off)
UNIT
9480
VGS = 0V
3
MAX
µJ
2095
VDD = 533V, VGS = 15V
ID = 51A, RG = 5Ω
1800
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
MIN
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current
1
VSD
Diode Forward Voltage
2
t rr
Reverse Recovery Time (IS = -ID51A, dl S /dt = 100A/µs)
Q
Reverse Recovery Charge (IS = -ID51A, dl S/dt = 100A/µs)
Peak Diode Recovery
dv/
MAX
51
IS
rr
dv/
dt
TYP
204
(Body Diode)
1.3
(VGS = 0V, IS = -ID51A)
dt
UNIT
Amps
Volts
1000
ns
34
µC
10
V/ns
MAX
UNIT
5
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
RθJC
Junction to Case
RθJA
Junction to Ambient
TYP
0.18
40
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 2.77mH, RG = 25Ω, Peak IL = 51A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -ID51A di/dt ≤ 700A/µs VR ≤ 800V TJ ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.9
0.7
0.12
0.5
Note:
0.08
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-7093 Rev A
2-2004
0.20
0.16
0.3
0.1
0
t1
t2
0.04
SINGLE PULSE
10-5
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
0.05
10-4
°C/W
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
10
Typical Performance Curves
APT8011JLL
RC MODEL
Junction
temp. (°C)
0.0375
0.0554F
Power
(watts)
0.142
0.751F
Case temperature. (°C)
ID, DRAIN CURRENT (AMPERES)
160
6V
140
VGS =15 & 10V
120
5.5V
100
5V
80
60
4.5V
40
20
4V
0
100
80
TJ = -55°C
60
TJ = +25°C
40
TJ = +125°C
20
0
0
1
2
3
4
5
6
7
8
9
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
NORMALIZED TO
= 10V @ 25.5A
GS
1.30
1.20
VGS=10V
1.10
1.00
VGS=20V
0.90
0.80
0
20
40
60
80
100 120 140
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.15
60
50
40
30
20
10
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
2.5
I
D
V
1.05
1.00
0.95
0.90
= 25.5A
GS
= 10V
2.0
1.5
1.0
0.5
0.0
-50
1.10
-50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
V
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25
50
75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
2-2004
120
VDS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
050-7093 Rev A
ID, DRAIN CURRENT (AMPERES)
140
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.40
APT8011JLL
30,000
OPERATION HERE
LIMITED BY RDS (ON)
100
100µS
50
1mS
10
5
Coss
1,000
10mS
TC =+25°C
TJ =+150°C
SINGLE PULSE
Crss
1
100
16
I
D
= 51A
12
VDS= 160V
VDS= 400V
8
VDS= 640V
4
0
0
100 200 300 400 500 600 700 800
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
200
IDR, REVERSE DRAIN CURRENT (AMPERES)
1
10
100
800
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Ciss
10,000
C, CAPACITANCE (pF)
ID, DRAIN CURRENT (AMPERES)
204
100
TJ =+150°C
TJ =+25°C
10
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
120
350
V
DD
R
300
G
td(off)
100
= 533V
= 5Ω
T = 125°C
J
V
DD
R
G
200
= 5Ω
T = 125°C
J
L = 100µH
150
60
40
100
20
50
3500
20
0
10
40
50
60
70
80
ID (A)
FIGURE 14, DELAY TIMES vs CURRENT
4000
tr
td(on)
0
10
V
DD
R
G
30
40
50
60
70
80
ID (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
V
DD
I
D
12,000
E ON includes
diode reverse recovery.
Eon
2000
1500
1000
Eoff
Eoff
L = 100µH
EON includes
10,000
diode reverse recovery.
8,000
6,000
4,000
Eon
2,000
500
0
10
= 533V
= 51A
J
L = 100µH
SWITCHING ENERGY (µJ)
SWITCHING ENERGY (µJ)
2-2004
2500
30
T = 125°C
J
3000
20
14,000
= 533V
= 5Ω
T = 125°C
050-7093 Rev A
tf
80
= 533V
tr and tf (ns)
td(on) and td(off) (ns)
L = 100µH
250
0
20
30
40
50
60
70
80
ID (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
0
5
10 15 20 25 30 35 40 45 50
RG, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
Typical Performance Curves
APT8011JLL
10%
Gate Voltage
90%
TJ = 125°C
Gate Voltage
TJ = 125°C
td(off)
td(on)
tr
DrainVoltage
Drain Current
90%
90%
5%
10%
tf
5%
10%
DrainVoltage
Drain Current
Switching Energy
Switching Energy
0
Figure 19, Turn-off Switching Waveforms and Definitions
Figure 18, Turn-on Switching Waveforms and Definitions
APT30DF60
V DD
IC
V CE
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
SOT-227 (ISOTOP®) Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
25.2 (0.992)
0.75 (.030) 12.6 (.496) 25.4 (1.000)
0.85 (.033) 12.8 (.504)
4.0 (.157)
4.2 (.165)
(2 places)
3.3 (.129)
3.6 (.143)
14.9 (.587)
15.1 (.594)
1.95 (.077)
2.14 (.084)
* Source
30.1 (1.185)
30.3 (1.193)
Drain
* Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
38.0 (1.496)
38.2 (1.504)
* Source
Gate
Dimensions in Millimeters and (Inches)
ISOTOP® is a Registered Trademark of SGS Thomson.
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
2-2004
r = 4.0 (.157)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
050-7093 Rev A
7.8 (.307)
8.2 (.322)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)