DA114/DA121/DA227/DAN202K/DAN202U DAN212K/DAN222/DAP202K/DAP202U/DAP222 Diodes Ultra high-speed switching diode arrays DA114 / DA121 / DA227 DAN202K / DAN202U / DAN212K / DAN222 DAP202K / DAP202U / DAP222 DAN202K / DAP202K / DAN212K 2.9±0.2 1.9±0.2 1.1 0.95 0.95 DA114 / DAN202U / DAP202U +0.2 -0.1 2.0±0.2 0.65 DA227 0.6 0.15 +0.1 -0.06 0~0.1 (3) 0.1Min. +0.1 -0.05 0.3~0.6 0.4 2.1±0.1 (2) (3) 0.15±0.05 0.3±0.1 (All pins have the same dimensions) ROHM : SMD3 EIAJ : SC - 59 ROHM : UMD3 EIAJ : SC - 70 JEDEC : SOT - 323 DA227 DA121 / DAN222 / DAP222 !Marking 1.25±0.1 0.65 0.9±0.1 0~0.1 (2) (3) 0.2±0.1 0.2±0.1 N20 1.3±0.1 0.15±0.05 0.5 0.5 (1) (2) +0.1 0.2 -0.05 0.55±0.1 0~0.1 (3) 0.3 +0.1 -0.05 2.0±0.2 ROHM : UMD4 EIAJ : SC - 82 JEDEC : SOT - 343 0.7±0.1 ROHM : EMD3 EIAJ : SC - 75 0.15±0.05 0.1Min. 2.1±0.1 +0.1 0.2 -0.05 0.65 0.65 AV 1.0±0.1 (4) 0.1Min. P 1.6±0.2 0.7 (1) 0.8±0.1 0.2±0.1 N 1.6±0.2 0.6 0.3±0.1 1.25±0.1 DAN222 DAN202U DAN202K DAP222 DAP202U DAP202K DA121 DA114 DAN212K (1) 1.25±0.1 0~0.1 (All pins have the same dimensions) !Construction Silicon epitaxial planar 0.3 0.65 (2) 2.8±0.2 (1) 0.9±0.1 1.3±0.1 0.8±0.1 +0.2 -0.1 !Features 1) Four types of packaging are available. 2) High reliability. 3) High speed. (Typical recovery time= 1.5ns) 4) Suitable for high packing density layout. !External dimensions (Units : mm) 1.6 !Applications Ultra high speed switching DA114/DA121/DA227/DAN202K/DAN202U DAN212K/DAN222/DAP202K/DAP202U/DAP222 Diodes !Equivalent circuits (1) (2) (2) (1) (4) (2) (3) (2) (1) (3) (3) (3) DAN202K DAN202U DAN222 DAP202K DAP202U DAP222 DA114 DA121 DAN212K DA227 !Absolute maximum ratings (Ta=25°C) Type Junction Storage Peak reverse DC reverse Peak forward Mean rectifying Surge current Power dissipation temperature temperature voltage voltage current current (1µs) (TOTAL) Tj (ºC) Tstg (ºC) VRM (V) VR (V) IFM (mA) IO (mA) Isurge (A) Pd(mW) TYPE DA114 80 80 300 100 4 200 150 −55~+150 N DA121 80 80 300 100 4 150 150 −55~+150 N DAN202K 80 80 300 100 4 200 150 −55~+150 N P DAP202K 80 80 300 100 4 200 150 −55~+150 DAN202U 80 80 300 100 4 150 150 −55~+150 N DAP202U 80 80 300 100 4 150 150 −55~+150 P DAN212K 80 80 300 100 4 200 150 −55~+150 N DAN222 80 80 300 100 4 150 150 −55~+150 N DAP222 80 80 300 100 4 150 150 −55~+150 P DA227 80 80 300 100 4 150 150 −55~+150 N !Electrical characteristics (Ta=25°C) Forward voltage Type VF (V) Max. Cond. IF (mA) Reverse current IR (µA) Max. Cond. VR (V) Capacitance between terminals CT (pF) Max. Cond. VR (V) f (MHz) Reverse recovery time trr (ns) Max. Cond. VR (V) IF (mA) DA114 1.2 100 0.1 70 3.5 6 1 4 6 5 DA121 1.2 100 0.1 70 3.5 6 1 4 6 5 DAN202K 1.2 100 0.1 70 3.5 6 1 4 6 5 DAP202K 1.2 100 0.1 70 3.5 6 1 4 6 5 DAN202U 1.2 100 0.1 70 3.5 6 1 4 6 5 DAP202U 1.2 100 0.1 70 3.5 6 1 4 6 5 DAN212K 1.2 100 0.1 70 3.5 6 1 4 6 5 DAN222 1.2 100 0.1 70 3.5 6 1 4 6 5 DAP222 1.2 100 0.1 70 3.5 6 1 4 6 5 DA227 1.2 100 0.1 70 3.5 6 1 4 6 5 DA114/DA121/DA227/DAN202K/DAN202U DAN212K/DAN222/DAP202K/DAP202U/DAP222 Diodes 1 000 50 125 Ta=100ºC 75 50 25 0 0 25 50 75 100 125 10 5 Ta=85ºC 50ºC 25ºC 0ºC −30ºC 2 1 0.5 0.2 0.1 0 150 REVERSE CURRENT : IR (nA) 100 20 AMBIENT TEMPERATURE :Ta (ºC) Fig. 1 Derating curve (mounting on glass epoxy PCBs) 0.2 0.4 0.6 0.8 1.0 1.2 1.4 REVERSE CURRENT : IR (nA) 5 Ta=85ºC 50ºC 25ºC 2 1 0ºC −30ºC 0.5 0.2 0.4 0.6 0.8 1.0 1.6 1.4 1.2 (V) FORWARD VOLTAGE : VF Fig. 4 Forward current vs. forward voltage (N TYPE) 75ºC 50ºC 10 25ºC 0ºC 1 −25ºC 0.1 10 20 30 40 10 20 50 2 P TYPE N TYPE 0 0 2 4 6 8 10 12 14 16 18 20 Fig. 5 Reverse current vs. reverse voltage (N TYPE) Fig. 6 Capacitance between terminals vs. reverse voltage D.U.T. 5Ω PULSE GENERATOR OUTPUT 50Ω 7 50Ω SAMPLING OSCILLOSCOPE 6 5 INPUT 4 E P TYP 3 2 N TYPE 1 2 3 4 5 6 7 FORWARD CURRENT : IF 8 9 10 100ns OUTPUT (mA) Fig. 7 Reverse recovery time vs. forward current trr 0 IR 1 50 f=1MHz REVERSE VOLTAGE : VR (V) 0.01µF 8 40 4 VR=6V 9 0 0 30 REVERSE VOLTAGE : VR (V) 10 REVERSE RECOVERY TIME : trr (ns) 0.1 Fig. 3 Reverse current vs. reverse voltage (P TYPE) 100 0.01 0 −25ºC Fig. 2 Forward current vs. forward voltage (P TYPE) 0.2 0.1 0 0ºC 1 0.1IR FORWARD CURRENT : IF (mA) 10 25ºC REVERSE VOLTAGE : VR (V) Ta=100ºC 20 50ºC 10 0.01 0 1.6 1 000 50 75ºC 100 FORWARD VOLTAGE : VF (V) CAPACITANCE BETWEEN TERMINALS : CT (pF) FORWARD CURRENT : IF (mA) POWER DISSIPATION : Pd / Pd Max.(%) !Electrical characteristic curves (Ta=25°C unless specified otherwise) Fig. 8 Reverse recovery time (trr) measurement circuit