Rohm DAN212K Ultra high-speed switching diode array Datasheet

DA114/DA121/DA227/DAN202K/DAN202U
DAN212K/DAN222/DAP202K/DAP202U/DAP222
Diodes
Ultra high-speed switching diode arrays
DA114 / DA121 / DA227
DAN202K / DAN202U / DAN212K / DAN222
DAP202K / DAP202U / DAP222
DAN202K / DAP202K / DAN212K
2.9±0.2
1.9±0.2
1.1
0.95 0.95
DA114 / DAN202U / DAP202U
+0.2
-0.1
2.0±0.2
0.65
DA227
0.6
0.15
+0.1
-0.06
0~0.1
(3)
0.1Min.
+0.1
-0.05
0.3~0.6
0.4
2.1±0.1
(2)
(3)
0.15±0.05
0.3±0.1
(All pins have the same dimensions)
ROHM : SMD3
EIAJ : SC - 59
ROHM : UMD3
EIAJ : SC - 70
JEDEC : SOT - 323
DA227
DA121 / DAN222 / DAP222
!Marking
1.25±0.1
0.65
0.9±0.1
0~0.1
(2)
(3)
0.2±0.1 0.2±0.1
N20
1.3±0.1
0.15±0.05
0.5 0.5
(1)
(2)
+0.1
0.2 -0.05
0.55±0.1
0~0.1
(3)
0.3 +0.1
-0.05
2.0±0.2
ROHM : UMD4
EIAJ : SC - 82
JEDEC : SOT - 343
0.7±0.1
ROHM : EMD3
EIAJ : SC - 75
0.15±0.05
0.1Min.
2.1±0.1
+0.1
0.2 -0.05
0.65 0.65
AV
1.0±0.1
(4)
0.1Min.
P
1.6±0.2
0.7
(1)
0.8±0.1
0.2±0.1
N
1.6±0.2
0.6
0.3±0.1
1.25±0.1
DAN222
DAN202U
DAN202K
DAP222
DAP202U
DAP202K
DA121
DA114
DAN212K
(1)
1.25±0.1
0~0.1
(All pins have the same dimensions)
!Construction
Silicon epitaxial planar
0.3
0.65
(2)
2.8±0.2
(1)
0.9±0.1
1.3±0.1
0.8±0.1
+0.2
-0.1
!Features
1) Four types of packaging are available.
2) High reliability.
3) High speed. (Typical recovery time=
1.5ns)
4) Suitable for high packing density layout.
!External dimensions (Units : mm)
1.6
!Applications
Ultra high speed switching
DA114/DA121/DA227/DAN202K/DAN202U
DAN212K/DAN222/DAP202K/DAP202U/DAP222
Diodes
!Equivalent circuits
(1)
(2)
(2)
(1)
(4)
(2)
(3)
(2)
(1)
(3)
(3)
(3)
DAN202K
DAN202U
DAN222
DAP202K
DAP202U
DAP222
DA114
DA121
DAN212K
DA227
!Absolute maximum ratings (Ta=25°C)
Type
Junction
Storage
Peak reverse DC reverse Peak forward Mean rectifying Surge current Power
dissipation temperature temperature
voltage
voltage
current
current
(1µs)
(TOTAL)
Tj (ºC)
Tstg (ºC)
VRM (V)
VR (V)
IFM (mA)
IO (mA)
Isurge (A)
Pd(mW)
TYPE
DA114
80
80
300
100
4
200
150
−55~+150
N
DA121
80
80
300
100
4
150
150
−55~+150
N
DAN202K
80
80
300
100
4
200
150
−55~+150
N
P
DAP202K
80
80
300
100
4
200
150
−55~+150
DAN202U
80
80
300
100
4
150
150
−55~+150
N
DAP202U
80
80
300
100
4
150
150
−55~+150
P
DAN212K
80
80
300
100
4
200
150
−55~+150
N
DAN222
80
80
300
100
4
150
150
−55~+150
N
DAP222
80
80
300
100
4
150
150
−55~+150
P
DA227
80
80
300
100
4
150
150
−55~+150
N
!Electrical characteristics (Ta=25°C)
Forward voltage
Type
VF (V)
Max.
Cond.
IF (mA)
Reverse current
IR (µA)
Max.
Cond.
VR (V)
Capacitance between terminals
CT (pF)
Max.
Cond.
VR (V) f (MHz)
Reverse recovery time
trr (ns)
Max.
Cond.
VR (V)
IF (mA)
DA114
1.2
100
0.1
70
3.5
6
1
4
6
5
DA121
1.2
100
0.1
70
3.5
6
1
4
6
5
DAN202K
1.2
100
0.1
70
3.5
6
1
4
6
5
DAP202K
1.2
100
0.1
70
3.5
6
1
4
6
5
DAN202U
1.2
100
0.1
70
3.5
6
1
4
6
5
DAP202U
1.2
100
0.1
70
3.5
6
1
4
6
5
DAN212K
1.2
100
0.1
70
3.5
6
1
4
6
5
DAN222
1.2
100
0.1
70
3.5
6
1
4
6
5
DAP222
1.2
100
0.1
70
3.5
6
1
4
6
5
DA227
1.2
100
0.1
70
3.5
6
1
4
6
5
DA114/DA121/DA227/DAN202K/DAN202U
DAN212K/DAN222/DAP202K/DAP202U/DAP222
Diodes
1 000
50
125
Ta=100ºC
75
50
25
0
0
25
50
75
100
125
10
5
Ta=85ºC
50ºC
25ºC
0ºC
−30ºC
2
1
0.5
0.2
0.1
0
150
REVERSE CURRENT : IR (nA)
100
20
AMBIENT TEMPERATURE :Ta (ºC)
Fig. 1 Derating curve
(mounting on glass epoxy
PCBs)
0.2
0.4
0.6
0.8
1.0
1.2
1.4
REVERSE CURRENT : IR (nA)
5
Ta=85ºC
50ºC
25ºC
2
1
0ºC
−30ºC
0.5
0.2
0.4
0.6
0.8
1.0
1.6
1.4
1.2
(V)
FORWARD VOLTAGE : VF
Fig. 4 Forward current vs.
forward voltage
(N TYPE)
75ºC
50ºC
10
25ºC
0ºC
1
−25ºC
0.1
10
20
30
40
10
20
50
2
P TYPE
N TYPE
0
0
2
4
6
8
10 12 14 16 18 20
Fig. 5 Reverse current vs.
reverse voltage
(N TYPE)
Fig. 6 Capacitance between
terminals vs.
reverse voltage
D.U.T.
5Ω
PULSE GENERATOR
OUTPUT 50Ω
7
50Ω
SAMPLING
OSCILLOSCOPE
6
5
INPUT
4
E
P TYP
3
2
N TYPE
1
2
3
4
5
6
7
FORWARD CURRENT : IF
8
9
10
100ns
OUTPUT
(mA)
Fig. 7 Reverse recovery time vs.
forward current
trr
0
IR
1
50
f=1MHz
REVERSE VOLTAGE : VR (V)
0.01µF
8
40
4
VR=6V
9
0
0
30
REVERSE VOLTAGE : VR (V)
10
REVERSE RECOVERY TIME : trr (ns)
0.1
Fig. 3 Reverse current vs.
reverse voltage
(P TYPE)
100
0.01
0
−25ºC
Fig. 2 Forward current vs.
forward voltage
(P TYPE)
0.2
0.1
0
0ºC
1
0.1IR
FORWARD CURRENT : IF (mA)
10
25ºC
REVERSE VOLTAGE : VR (V)
Ta=100ºC
20
50ºC
10
0.01
0
1.6
1 000
50
75ºC
100
FORWARD VOLTAGE : VF (V)
CAPACITANCE BETWEEN TERMINALS : CT (pF)
FORWARD CURRENT : IF (mA)
POWER DISSIPATION : Pd / Pd Max.(%)
!Electrical characteristic curves (Ta=25°C unless specified otherwise)
Fig. 8 Reverse recovery time (trr) measurement circuit
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