APT6021BFLL
APT6021SFLL
600V 29A 0.210Ω
POWER MOS 7
R
FREDFET
BFLL
D3PAK
®
Power MOS 7 is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
®
losses are addressed with Power MOS 7 by significantly lowering RDS(ON)
®
and Qg. Power MOS 7 combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
SFLL
• Increased Power Dissipation
• Easier To Drive
• TO-247 or Surface Mount D3PAK Package
• FAST RECOVERY BODY DIODE
MAXIMUM RATINGS
Symbol
TO-247
D
G
S
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT6021BFLL_SFLL
UNIT
Drain-Source Voltage
600
Volts
ID
Continuous Drain Current @ TC = 25°C
29
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
VGSM
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
400
Watts
Linear Derating Factor
3.20
W/°C
VDSS
PD
TJ,TSTG
1
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
EAS
1
Amps
116
-55 to 150
°C
300
Amps
29
(Repetitive and Non-Repetitive)
1
Single Pulse Avalanche Energy
Volts
30
4
mJ
1300
STATIC ELECTRICAL CHARACTERISTICS
MIN
BVDSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
600
RDS(on)
Drain-Source On-State Resistance
IDSS
IGSS
VGS(th)
2
(VGS = 10V, ID = 14.5A)
TYP
MAX
UNIT
Volts
0.210
Ohms
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V)
250
Zero Gate Voltage Drain Current (VDS = 480V, VGS = 0V, TC = 125°C)
1000
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
±100
nA
5
Volts
Gate Threshold Voltage (VDS = VGS, ID = 1mA)
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
µA
9-2004
Characteristic / Test Conditions
050-7068 Rev C
Symbol
APT6021BFLL_SFLL
DYNAMIC CHARACTERISTICS
Symbol
C iss
Characteristic
Test Conditions
Input Capacitance
Coss
VGS = 0V
Output Capacitance
VDS = 25V
C rss
Reverse Transfer Capacitance
f = 1 MHz
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain ("Miller ") Charge
td(on)
Turn-on Delay Time
tr
3
RESISTIVE SWITCHING
VGS = 15V
VDD = 300V
ID = 29A @ 25°C
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
6
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
6
nC
ns
4
RG = 1.6Ω
Eon
UNIT
pF
50
80
20
44
10
7
25
VDD = 300V
Fall Time
MAX
3470
635
ID = 29A @ 25°C
Turn-off Delay Time
tf
TYP
VGS = 10V
Rise Time
td(off)
MIN
INDUCTIVE SWITCHING @ 25°C
325
VDD = 400V, VGS = 15V
ID = 29A, RG = 5Ω
205
INDUCTIVE SWITCHING @ 125°C
500
VDD = 400V, VGS = 15V
ID = 29A, RG = 5Ω
µJ
250
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
Characteristic / Test Conditions
MIN
TYP
MAX
UNIT
IS
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current
1
(Body Diode)
116
VSD
Diode Forward Voltage
2
(VGS = 0V, IS = -29A)
1.3
Volts
dv/
Peak Diode Recovery
15
V/ns
dt
dv/
dt
29
5
t rr
Reverse Recovery Time
(IS = -29A, di/dt = 100A/µs)
Tj = 25°C
250
Tj = 125°C
525
Q rr
Reverse Recovery Charge
(IS = -29A, di/dt = 100A/µs)
Tj = 25°C
1.5
Tj = 125°C
5.5
IRRM
Peak Recovery Current
(IS = -29A, di/dt = 100A/µs)
Tj = 25°C
13
Tj = 125°C
23
Amps
ns
µC
Amps
THERMAL CHARACTERISTICS
Symbol
Characteristic
RθJC
Junction to Case
RθJA
Junction to Ambient
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
MIN
TYP
MAX
0.31
40
0.9
0.25
0.7
0.20
0.5
0.3
0.10
0.05
0
Note:
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-7068 Rev C
9-2004
0.35
0.15
0.1
t1
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
0.05
10-5
°C/W
4 Starting Tj = +25°C, L = 3.09mH, RG = 25Ω, Peak IL = 29A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -ID29A di/dt ≤ 700A/µs VR ≤ VDSS TJ ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.30
UNIT
SINGLE PULSE
10-4
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
Junction
temp. (°C)
0.00789F
Power
(watts)
0.180
0.161F
Case temperature. (°C)
ID, DRAIN CURRENT (AMPERES)
RC MODEL
0.131
APT6021BFLL_SFLL
80
VGS =15 &10V
60
8V
7.5V
40
7V
6.5V
20
6V
5.5V
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
100
VDS> ID (ON) x RDS (ON)MAX.
250 µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
80
70
60
50
40
TJ = +125°C
30
TJ = +25°C
20
10
0
2
4
6
8
10
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
25
20
15
10
5
0
25
1.10
VGS=10V
1.05
VGS=20V
1.00
0.95
0.90
0
I
D
V
10
20
30
40
50
60
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.10
1.05
1.00
0.95
0.90
-50
-25
0
25
50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
= 14.5A
GS
= 10V
2.0
1.5
1.0
0.5
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
2.5
NORMALIZED TO
= 10V @ 14.5A
GS
1.15
1.15
30
0.0
-50
V
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25
50
75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
9-2004
0
TJ = -55°C
0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.2
050-7068 Rev C
ID, DRAIN CURRENT (AMPERES)
90
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
0
10
C, CAPACITANCE (pF)
100µS
10mS
16
= 29A
12
VDS=120V
VDS=300V
8
VDS=480V
4
0
20
40
60
80
100
120
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
10
0
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
70
50
V
10
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
V
DD
G
DD
R
G
40
T = 125°C
J
L = 100µH
= 5Ω
T = 125°C
J
L = 100µH
30
= 400V
= 5Ω
40
= 400V
tr and tf (ns)
td(on) and td(off) (ns)
TJ =+25°C
50
tf
30
tr
20
20
td(on)
0
10
10
0
30
40
50
ID (A)
FIGURE 14, DELAY TIMES vs CURRENT
20
0
10
20
30
40
50
ID (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
1400
V
DD
R
G
= 400V
V
= 5Ω
1200
T = 125°C
800
J
L = 100µH
SWITCHING ENERGY (µJ)
SWITCHING ENERGY (µJ)
TJ =+150°C
td(off)
1000
9-2004
100
R
10
050-7068 Rev C
200
60
60
0
100
Crss
1
10
100
600
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
D
Coss
1mS
TC =+25°C
TJ =+150°C
SINGLE PULSE
I
1,000
IDR, REVERSE DRAIN CURRENT (AMPERES)
ID, DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Ciss
OPERATION HERE
LIMITED BY RDS (ON)
50
1
APT6021BFLL_SFLL
10,000
116
Eon
E ON includes
diode reverse recovery.
600
400
Eoff
200
I
DD
D
= 400V
= 29A
T = 125°C
J
L = 100µH
E ON includes
1000
Eoff
diode reverse recovery.
800
Eon
600
400
200
0
0
10
20
30
40
50
ID (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
0
0
10
20
30
40
50
RG, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
APT6021BFLL_SFLL
Gate Voltage
10 %
90%
T = 125 C
J
td(on)
tr
Gate Voltage
td(off)
90%
Drain Current
90%
T = 125 C
J
Drain Voltage
tf
5%
5%
10%
Drain Current
Drain Voltage
10 %
0
Switching Energy
Switching Energy
Figure 19, Turn-off Switching Waveforms and Definitions
Figure 18, Turn-on Switching Waveforms and Definitions
APT15DF60
ID
V DD
V DS
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
3
TO-247 Package Outline
15.49 (.610)
16.26 (.640)
6.15 (.242) BSC
5.38 (.212)
6.20 (.244)
Drain
(Heat Sink)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
D PAK Package Outline
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
15.95 (.628)
16.05 (.632)
Revised
4/18/95
Drain
20.80 (.819)
21.46 (.845)
1.04 (.041)
1.15 (.045)
13.79 (.543)
13.99 (.551)
13.41 (.528)
13.51 (.532)
Revised
8/29/97
11.51 (.453)
11.61 (.457)
3.50 (.138)
3.81 (.150)
0.40 (.016)
0.79 (.031)
2.21 (.087)
2.59 (.102)
19.81 (.780)
20.32 (.800)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
0.020 (.001)
0.178 (.007)
2.67 (.105)
2.84 (.112)
Gate
Drain
Source
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
1.27 (.050)
1.40 (.055)
1.22 (.048)
1.32 (.052)
1.98 (.078)
2.08 (.082)
5.45 (.215) BSC
{2 Plcs.}
Source
Drain
Gate
Dimensions in Millimeters (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
3.81 (.150)
4.06 (.160)
(Base of Lead)
Heat Sink (Drain)
and Leads
are Plated
9-2004
4.50 (.177) Max.
050-7068 Rev C
0.46 (.018)
0.56 (.022) {3 Plcs}