KEC BC559 Epitaxial planar pnp transistor Datasheet

SEMICONDUCTOR
BC559/560
TECHNICAL DATA
EPITAXIAL PLANAR PNP TRANSISTOR
LOW NOISE APPLICATION.
FEATURE
B
C
A
For Complementary with NPN Type BC549/550.
N
E
K
MAXIMUM RATING (Ta=25
G
)
J
D
SYMBOL
-30
VCBO
Collector-Base Voltage
BC560
BC559
V
-50
VEBO
-5
V
Collector Current
IC
-100
mA
Collector Power Dissipation
PC
625
mW
Junction Temperature
Tj
150
Tstg
-55 150
Emitter-Base Voltage
Storage Temperature Range
F
V
-45
L
BC560
H
F
-30
VCEO
Collector-Emitter Voltage
UNIT
1
2
C
BC559
RATING
3
MILLIMETERS
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
_ 0.50
14.00 +
0.55 MAX
2.30
0.45 MAX
1.00
M
CHARACTERISTIC
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
1. COLLECTOR
2. BASE
3. EMITTER
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Emitter
BC559
Breakdown Voltage
BC560
Collector-Base
BC559
Breakdown Voltage
BC560
TEST CONDITION
MIN.
TYP.
MAX.
-30
-
-
-45
-
-
-30
-
-
-50
-
-
UNIT
V(BR)CEO
IC=-10mA, IB=0
V(BR)CBO
IC=-10 A, IE=0
V(BR)EBO
IE=-10 A, IC=0
-5.0
-
-
V
Collector Cut-off Current
ICBO
VCB=-30V, IE=0
-
-
-15
nA
DC Current Gain
hFE
IC=-2mA, VCE=-5V
110
-
800
Base-Emitter Voltage
VBE(ON)
IC=-2mA, VCE=-5V
-0.55
-
-0.7
V
Collector-Emitter Saturation Voltage
VCE(sat)
IC=-100mA, IB=-5mA
-
-
-0.6
V
Base-Emitter Saturation Voltage
VBE(sat)
IC=-100mA, IB=-5mA
-
-0.9
-
V
IC=-10mA, VCE=-5V, f=100MHz
-
300
-
MHz
VCB=-10V, IE=0, f=1MHz
-
-
7.0
pF
-
-
4.0
dB
Emitter-Base Breakdown Voltage
fT
Transition Frequency
Collector Output Capacitance
Cob
Noise Figure
NF
IC=-200 A, VCE=-5V
Rg=10k
Note : hFE Classification A:110
1999. 11. 30
220,
B:200
Revision No : 2
450,
V
V
, f=1kHz
C:420 800
1/1
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