SEMICONDUCTOR BC559/560 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR LOW NOISE APPLICATION. FEATURE B C A For Complementary with NPN Type BC549/550. N E K MAXIMUM RATING (Ta=25 G ) J D SYMBOL -30 VCBO Collector-Base Voltage BC560 BC559 V -50 VEBO -5 V Collector Current IC -100 mA Collector Power Dissipation PC 625 mW Junction Temperature Tj 150 Tstg -55 150 Emitter-Base Voltage Storage Temperature Range F V -45 L BC560 H F -30 VCEO Collector-Emitter Voltage UNIT 1 2 C BC559 RATING 3 MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 0.50 14.00 + 0.55 MAX 2.30 0.45 MAX 1.00 M CHARACTERISTIC DIM A B C D E F G H J K L M N 1. COLLECTOR 2. BASE 3. EMITTER TO-92 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Emitter BC559 Breakdown Voltage BC560 Collector-Base BC559 Breakdown Voltage BC560 TEST CONDITION MIN. TYP. MAX. -30 - - -45 - - -30 - - -50 - - UNIT V(BR)CEO IC=-10mA, IB=0 V(BR)CBO IC=-10 A, IE=0 V(BR)EBO IE=-10 A, IC=0 -5.0 - - V Collector Cut-off Current ICBO VCB=-30V, IE=0 - - -15 nA DC Current Gain hFE IC=-2mA, VCE=-5V 110 - 800 Base-Emitter Voltage VBE(ON) IC=-2mA, VCE=-5V -0.55 - -0.7 V Collector-Emitter Saturation Voltage VCE(sat) IC=-100mA, IB=-5mA - - -0.6 V Base-Emitter Saturation Voltage VBE(sat) IC=-100mA, IB=-5mA - -0.9 - V IC=-10mA, VCE=-5V, f=100MHz - 300 - MHz VCB=-10V, IE=0, f=1MHz - - 7.0 pF - - 4.0 dB Emitter-Base Breakdown Voltage fT Transition Frequency Collector Output Capacitance Cob Noise Figure NF IC=-200 A, VCE=-5V Rg=10k Note : hFE Classification A:110 1999. 11. 30 220, B:200 Revision No : 2 450, V V , f=1kHz C:420 800 1/1