Micronas HAL207JQ-K Hall-effect sensor family Datasheet

Hardware
Documentation
Data Sheet
®
HAL 2xy
Hall-Effect Sensor Family
Edition Jan. 11, 2010
DSH000141_003EN
HAL 2xy
DATA SHEET
Copyright, Warranty, and Limitation of Liability
The information and data contained in this document
are believed to be accurate and reliable. The software
and proprietary information contained therein may be
protected by copyright, patent, trademark and/or other
intellectual property rights of Micronas. All rights not
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– HAL
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suitability of its products for any particular purpose due
to these specifications.
By this publication, Micronas does not assume responsibility for patent infringements or other rights of third
parties which may result from its use. Commercial conditions, product availability and delivery are exclusively
subject to the respective order confirmation.
Any information and data which may be provided in the
document can and do vary in different applications,
and actual performance may vary over time.
All operating parameters must be validated for each
customer application by customers’ technical experts.
Any new issue of this document invalidates previous
issues. Micronas reserves the right to review this document and to make changes to the document’s content at any time without obligation to notify any person
or entity of such revision or changes. For further
advice please contact us directly.
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Micronas’ products are not designed, intended or
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could create a situation where personal injury or death
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No part of this publication may be reproduced, photocopied, stored on a retrieval system or transmitted
without the express written consent of Micronas.
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HAL 2xy
DATA SHEET
Contents
Page
Section
Title
4
4
4
5
5
5
1.
1.1.
1.2.
1.3.
1.4.
1.5.
Introduction
Features
Family Overview
Marking Code
Operating Junction Temperature Range
Solderability and Welding
6
2.
Functional Description
7
7
9
9
9
9
10
10
12
3.
3.1.
3.2.
3.3.
3.4.
3.4.1.
3.5.
3.6.
3.7.
Specifications
Outline Dimensions
Dimensions of Sensitive Area
Positions of Sensitive Areas
Absolute Maximum Ratings
Storage and Shelf Life
Recommended Operating Conditions
Characteristics
Magnetic Characteristics Overview
15
15
15
15
15
15
15
15
16
4.
4.1.
4.2.
4.2.1.
4.2.2.
4.3.
4.3.1.
4.3.2.
4.4.
Application Notes
Ambient Temperature
HAL20y, HAL21y Operation
Extended Operating Conditions
Start-up Behavior
HAL22y Operation
Extended Operating Conditions
Start-up Behavior
EMC and ESD
17
5.
Data Sheet History
Micronas
Jan. 11, 2010; DSH000141_003EN
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HAL 2xy
DATA SHEET
Hall-Effect Sensor Family
– superior temperature stability for automotive or
industrial applications
Release Note: Revision bars indicate significant
changes to the previous edition.
– high ESD rating
– EMC corresponding to ISO 7637
1. Introduction
1.2. Family Overview
The HAL 2xy Hall switch family is produced in CMOS
technology. The sensors include a temperature-compensated Hall plate with active offset compensation, a
comparator, and an open-drain output transistor. The
comparator compares the actual magnetic flux through
the Hall plate (Hall voltage) with the fixed reference
values (switching points). Accordingly, the output transistor is switched on or off. In addition the HAL22y
sensors features a power-on and undervoltage reset.
The active offset compensation leads to magnetic
parameters which are robust against mechanical
stress effects. In addition, the magnetic characteristics
are constant in the full supply voltage and temperature
range.
The sensors are designed for industrial and automotive applications and operate with supply voltages
from 3.8 V to 24 V in the ambient temperature range
from −40 °C up to 125 °C. For HAL22y the minimum
supply voltage is 4.3 V.
The HAL 2xy family is available in the SMD package
SOT89B-3 and in the leaded versions TO92UA-5 and
TO92UA-6.
This sensor family consists of sensors with latching
and unipolar output behavior.
Type
Switching
Behavior
Sensitivity
see
Page
201
unipolar
low
12
202
latching
high
12
203
latching
medium
12
204
latching
low
12
206
unipolar
high
12
207
unipolar
low
12
208
unipolar
medium
12
210
unipolar
high
12
211
unipolar with
inverted output
(north polarity)
high
12
212
unipolar
low
12
1.1. Features
– switching offset compensation
– operates from 3.8 V to 24 V supply voltage (HAL22y
minimum supply voltage is 4.3 V)
Family members with power-on and undervoltage
reset (HAL22y):
– power-on and undervoltage reset in case of HAL22y
Type
Sensitivity
– operates with static magnetic fields and dynamic
magnetic fields up to 10 kHz
Switching
Behavior
see
Page
220
latching
high
12
221
unipolar
low
12
– overvoltage protection at all pins
– reverse-voltage protection at VDD-pin
– magnetic characteristics are robust against
mechanical stress effects
– short-circuit protected open-drain output by thermal
shut down
– constant switching points over a wide supply voltage and temperature range
– the decrease of magnetic flux density caused by
rising temperature in the sensor system is compensated by a built-in negative temperature coefficient
of the magnetic characteristics
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HAL 2xy
DATA SHEET
Unipolar Sensors:
1.4. Operating Junction Temperature Range
The output turns low with the magnetic south pole on
the branded side of the package and turns high if the
magnetic field is removed. The sensor does not
respond to the magnetic north pole on the branded side.
The Hall sensors from Micronas are specified to the
chip temperature (junction temperature TJ).
Latching Sensors:
Note: Due to power dissipation, there is a difference
between the ambient temperature (TA) and
junction temperature. Please refer to section
4.1. on page 15 for details.
The sensors have a latching behavior and require a
magnetic north and south pole for correct functioning.
The output turns low with the magnetic south pole on
the branded side of the package and turns high with
the magnetic north pole on the branded side. The
output does not change if the magnetic field is
removed. For changing the output state, the opposite
magnetic field polarity must be applied.
K: TJ = −40 °C to +140 °C
Hall Sensor Package Codes
HALXXXPA-T
Temperature Range: K
Package: TQ for SOT89B-3
JQ for TO92UA-5/6
Unipolar Switching Sensors with Inverted Output
Sensitive to North Pole:
Type: 2xy
The output turns high with the magnetic north pole on
the branded side of the package and turns low if the
magnetic field is removed. The sensor does not
respond to the magnetic south pole on the brandedside.
Example: HAL202JQ-K
→ Type: 202
→ Package: TO92UA-6
→ Temperature Range: TJ = −40 °C to +140 °C
1.3. Marking Code
All Hall sensors have a marking on the package
surface (branded side). This marking includes the
name of the sensor and the temperature range.
Type
Temperature Range
1.5. Solderability and Welding
K
During soldering reflow processing and manual
reworking, a component body temperature of 260 °C
should not be exceeded.
HAL201
201K
HAL202
202K
HAL203
203K
HAL204
204K
HAL206
206K
HAL207
207K
HAL208
208K
HAL210
210K
HAL211
211K
HAL212
212K
HAL220
220K
HAL221
221K
Micronas
Hall sensors are available in a wide variety of packaging versions and quantities. For more detailed information, please refer to the brochure: “Hall Sensors.
Ordering Codes, Packaging, Handling”.
Device terminals shall be compatible with laser and
electrical welding. Please, note that the success of the
welding process is subject to different welding parameters which will vary according to the welding technique
used. A very close control of the welding parameters is
absolutely necessary in order to reach satisfying
results. Micronas, therefore, does not give any implied
or express warranty as to the ability to weld the component.
1 VDD
3
OUT
2 GND
Fig. 1–1: Pin configuration
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HAL 2xy
DATA SHEET
2. Functional Description
The Hall effect sensor is a monolithic integrated circuit
that switches in response to magnetic fields. If a magnetic field with flux lines perpendicular to the sensitive
area is applied to the sensor, the biased Hall plate
forces a Hall voltage proportional to this field. The Hall
voltage is compared with the actual threshold level in
the comparator. The temperature-dependent bias
increases the supply voltage of the Hall plates and
adjusts the switching points to the decreasing induction of magnets at higher temperatures. If the magnetic
field exceeds the threshold levels, the open drain
output switches to the appropriate state. The built-in
hysteresis eliminates oscillation and provides switching behavior of output without bouncing.
1
VDD
Reverse
Voltage &
Overvoltage
Protection
Temperature
Dependent
Bias
Short Circuit
and
Overvoltage
Protection
Hysteresis
Control
Hall Plate
Comparator
3
Switch
Output
OUT
Clock
2
GND
Magnetic offset caused by mechanical stress is compensated for by using the “switching offset compensation technique”. Therefore, an internal oscillator provides a two phase clock. The Hall voltage is sampled
at the end of the first phase. At the end of the second
phase, both sampled and actual Hall voltages are
averaged and compared with the actual switching
point. Subsequently, the open drain output switches to
the appropriate state. The time from crossing the magnetic switching level to switching of output can vary
between zero and 1/fosc.
Shunt protection devices clamp voltage peaks at the
Output pin and VDD-pin together with external series
resistors. Reverse current is limited at the VDD-pin by
an internal series resistor up to −15 V. No external
reverse protection diode is needed at the VDD-pin for
reverse voltages ranging from 0 V to −15 V.
Fig. 2–1: HAL20y and HAL21y block diagram
VDD
1
Reverse
Voltage &
Overvoltage
Protection
Temperature
Dependent
Bias
Hall Plate
Hysteresis
Control
Power-on &
Undervoltage
Reset
Short Circuit &
Overvoltage
Protection
Comparator
Switch
OUT
Output
3
Clock
GND
2
Fig. 2–2: HAL22y block diagram
In case of HAL22y a built-in reset-circuit clamps the
output to the “high” state (reset state) during power-on
or when the supply voltage drops below the reset voltage of Vreset < 4.3 V. For supply voltages between
Vreset and 4.3 V, the output state of the device
responds to the magnetic field. For supply voltages
above 4.3 V, the device works according to the specified characteristics.
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HAL 2xy
DATA SHEET
3. Specifications
3.1. Outline Dimensions
Fig. 3–1:
SOT89B-3: Plastic Small Outline Transistor package, 4 leads, with one sensitive area
Weight approximately 0.034 g.
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HAL 2xy
DATA SHEET
Fig. 3–2:
TO92UA-6: Plastic Transistor Standard UA package, 3 leads
Weight approximately 0.106 g
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HAL 2xy
DATA SHEET
3.2. Dimensions of Sensitive Area
0.25 mm × 0.12 mm (on chip)
3.3. Positions of Sensitive Areas
SOT89B-3
TO92UA-5/6
y
0.95 mm nominal
1.08 mm nominal
A4
0.33 mm nominal
0.30 mm nominal
3.4. Absolute Maximum Ratings
Stresses beyond those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. This
is a stress rating only. Functional operation of the device at these conditions is not implied. Exposure to absolute
maximum rating conditions for extended periods will affect device reliability.
This device contains circuitry to protect the inputs and outputs against damage due to high static voltages or electric
fields; however, it is advised that normal precautions be taken to avoid application of any voltage higher than absolute maximum-rated voltages to this high-impedance circuit.
All voltages listed are referenced to ground (GND).
Symbol
Parameter
Pin Name
Min.
Max.
Unit
VDD
Supply Voltage
1
−15
281)
V
VO
Output Voltage
3
−0.3
281)
V
IO
Continuous Output On Current
3
−
501)
mA
TJ
Junction Temperature Range
−40
1702)
°C
1)
2)
as long as TJmax is not exceeded
t < 1000 h
3.4.1. Storage and Shelf Life
The permissible storage time (shelf life) of the sensors is unlimited, provided the sensors are stored at a maximum of
30 °C and a maximum of 85% relative humidity. At these conditions, no Dry Pack is required.
Solderability is guaranteed for one year from the date code on the package.
Micronas
Jan. 11, 2010; DSH000141_003EN
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HAL 2xy
DATA SHEET
3.5. Recommended Operating Conditions
Functional operation of the device beyond those indicated in the “Recommended Operating Conditions/Characteristics” is not implied and may result in unpredictable behavior, reduce reliability and lifetime of the device.
All voltages listed are referenced to ground (GND).
Symbol
Parameter
Pin Name
Min.
Max.
Unit
Comment
VDD
Supply Voltage
1
3.8
24
V
for HAL20y and
HAL21y only
VDD
Supply Voltage
1
4.3
24
V
for HAL22y only
IO
Continuous Output on Current
3
0
20
mA
VO
Output Voltage
(output switched off)
3
0
24
V
3.6. Characteristics
at TJ = −40 °C to +140 °C, VDD = 3.8 V to 24 V (HAL22y: VDD = 4.3 V to 24 V), GND = 0 V
at Recommended Operation Conditions if not otherwise specified in the column “Conditions”.
Typical Characteristics for TJ = 25 °C and VDD = 12 V.
Symbol
Parameter
Pin No.
Min.
Typ.
Max.
Unit
IDD
Supply Current over
Temperature Range
1
1.6
3
5.2
mA
VDDZ
Overvoltage Protection
at Supply
1
−
28.5
32
V
IDD = 25 mA, TJ = 25 °C,
t = 20 ms
VOZ
Overvoltage Protection at Output
3
−
28
32
V
IOH = 25 mA, TJ = 25 °C,
t = 20 ms
VOL
Output Voltage over
Temperature Range
3
−
130
400
mV
IOL = 20 mA
IOH
Output Leakage Current over
Temperature Range
3
−
−
10
µA
Output switched off,
TJ ≤150 °C, VOH = 3.8 to 24
fosc
Internal Oscillator Chopper
Frequency over Temperature
Range
−
−
62
−
kHz
HAL20y, HAL21y, HAL22y
−
140
−
kHz
HAL204
−
35
−
µs
1)
For HAL20y, HAL21y only
−
70
−
µs
1)
For HAL 22y only
ten(O)
Enable Time of Output after
Setting of VDD
1
Conditions
Vreset
Reset Voltage
1
−
3.8
−
V
For HAL 22y only
tr
Output Rise Time
3
−
75
400
ns
tf
Output Fall Time
3
−
50
400
ns
VDD = 12 V,
RL = 820 Ohm,
CL = 20 pF
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HAL 2xy
DATA SHEET
Symbol
Parameter
Pin No.
Min.
Typ.
Max.
Unit
Conditions
Measured with a 1s0p board
30 mm x 10 mm x 1.5 mm,
pad size (see Fig. 3–3)
SOT89B Package
Thermal Resistance
Rthja
Junction to Ambient
−
−
−
212
K/W
Rthjc
Junction to Case
−
−
−
73
K/W
TO92UA Package
Thermal Resistance
Measured with a 1s0p board
Rthja
Junction to Ambient
−
−
−
225
K/W
Rthjc
Junction to Case
−
−
−
63
K/W
1)
VDD = 12 V, B > BON + 2 mT or B < BOFF − 2 mT and B > BOFF + 2 mT or B < BON - 2 mT for HAL 212
1.80
1.05
1.45
2.90
1.05
0.50
1.50
Fig. 3–3: Recommended footprint SOT89B-3,
Dimensions in mm
All dimensions are for reference only. The pad size may
vary depending on the requirements of the soldering
process.
Micronas
Jan. 11, 2010; DSH000141_003EN
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HAL 2xy
DATA SHEET
3.7. Magnetic Characteristics Overview
at TJ = −40 °C to +140 °C, VDD = 3.8 V to 24 V, (HAL22y: VDD = 4.3 V to 24 V)
Typical Characteristics for VDD = 12 V. Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
Sensor
Switching Type
Parameter
TJ
On point BON
Off point BOFF
Hysteresis BHYS
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Unit
HAL201
−40 °C
28
33
42
18
23
30
−
10.0
−
mT
unipolar
25 °C
28
34
42
18
24
30
−
10.0
−
mT
140 °C
26
32
42
17.5
22
30
−
10.0
−
mT
HAL202
−40 °C
0.5
2.8
6.5
−6.5
−2.8
−0.5
−
5.6
−
mT
latching
25 °C
0.5
2.6
6
−6
−2.6
−0.5
−
5.2
−
mT
140 °C
0.1
2.4
5.5
−5.5
−2.4
−0.1
−
4.8
−
mT
HAL203
−40 °C
5.5
8.4
12.5
−12.5
−8.6
−5.5
−
17
−
mT
latching
25 °C
5
7.6
11.5
−11.5
−7.6
−5
−
15.2
−
mT
140 °C
3.5
6.7
11.0
−11.0
−6.4
−3.5
−
13.1
−
mT
HAL204
−40 °C
10.5
15.8
21.5
−21.5
−15.8
−10.5
−
31.6
−
mT
latching
25 °C
10
14
18.5
−18.5
−14
−10
−
28
−
mT
140 °C
6.0
10
15.5
−15.5
−10
−6.0
−
20
−
mT
HAL206
−40 °C
8.8
12.5
18.0
4.5
7.0
11.0
−
5.5
−
mT
unipolar
25 °C
8.1
12.0
16.5
4.2
6.5
10.4
−
5.5
−
mT
140 °C
7.4
10.0
16.0
3.4
6.0
9.9
−
4.0
−
mT
HAL207
−40 °C
19.6
27.5
35.8
16.9
23.0
31.3
−
4.5
−
mT
unipolar
25 °C
19.6
26.5
35.0
16.9
22.5
30.6
−
4.0
−
mT
140 °C
18.4
26.0
33.6
15.8
22.0
29.4
−
4.0
−
mT
HAL208
−40 °C
13.1
17.5
25.0
11.9
15.7
23.0
−
1.8
−
mT
unipolar
25 °C
12.7
17.0
23.8
11.4
15.0
21.9
−
2.0
−
mT
140 °C
10.8
14.6
23.0
9.7
13.0
21.0
−
1.6
−
mT
HAL210
−40 °C
2.3
8.1
12.0
1.8
5.9
11.5
−
2.2
−
mT
unipolar
25 °C
2.3
7.9
12.0
1.8
5.7
11.5
−
2.2
−
mT
140 °C
2.3
7.7
12.0
1.8
5.7
11.5
−
2.0
−
mT
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HAL 2xy
DATA SHEET
Sensor
Switching Type
Parameter
TJ
On point BON
Off point BOFF
Hysteresis BHYS
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Unit
HAL211
−40 °C
−11.5
−4.9
−1.8
−12.0
−7.4
−2.3
−
2.5
−
mT
unipolar
25 °C
−11.5
−5.2
−1.8
−12.0
−7.6
−2.3
−
2.4
−
mT
inverted
140 °C
−11.5
−5.5
−1.8
−12.0
−7.7
−2.3
−
2.3
−
mT
HAL 212
−40 °C
25.8
30.6
35.2
23.8
28.6
33.2
−
2.0
−
mT
unipolar
25 °C
24.1
28.9
34.5
22.3
27.1
32.7
−
1.8
−
mT
140 °C
20.4
25.6
32.0
18.9
24.1
30.5
−
1.5
−
mT
HAL220
−40 °C
0.5
2.8
6.5
−6.5
−2.8
−0.5
−
5.6
−
mT
latching
25 °C
0.5
2.6
6
−6
−2.6
−0.5
−
5.2
−
mT
140 °C
0.3
2.4
5.5
−5.5
−2.4
−0.3
−
4.8
−
mT
HAL221
−40 °C
13.0
19.0
23.0
7.5
12.0
17.5
−
7.0
−
mT
unipolar
25 °C
13.0
18.5
23.0
7.5
12.0
17.5
−
6.5
−
mT
140 °C
13.0
17.5
23.0
7.5
11.5
17.5
−
6.0
−
mT
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Jan. 11, 2010; DSH000141_003EN
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HAL 2xy
DATA SHEET
mA
25
mA
5
HAL 2xy
HAL 2xy
20
IDD
IDD
TA = –40 °C
15
4
TA = 25 °C
TA = 140 °C
10
3
5
2
0
VDD = 3.8 V
VDD = 12 V
–5
VDD = 24 V
1
–10
–15
–15–10 –5 0
0
–50
5 10 15 20 25 30 35 V
50
100
150
200 °C
TA
VDD
Fig. 3–4: Typical supply current
versus supply voltage
mA
5.0
0
Fig. 3–6: Typical supply current
versus ambient temperature
HAL 2xy
4.5
IDD
4.0
TA = –40 °C
3.5
TA = 25 °C
3.0
TA = 100 °C
2.5
TA = 140 °C
2.0
1.5
1.0
0.5
0
1
2
3
4
5
6
7
8 V
VDD
Fig. 3–5: Typical supply current
versus supply voltage
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HAL 2xy
DATA SHEET
4. Application Notes
4.2.2. Start-up Behavior
4.1. Ambient Temperature
Due to the active offset compensation, the sensors
have an initialization time (enable time ten(O)) after
applying the supply voltage. The parameter ten(O) is
specified in Section 3.6.: Characteristics on page 10.
Due to the internal power dissipation, the temperature
on the silicon chip (junction temperature TJ) is higher
than the temperature outside the package (ambient
temperature TA).
T J = T A + ΔT
At static conditions and continuous operation, the following equation applies:
ΔT = I DD × V DD × R th
During the initialization time, the output state is not
defined and the output can toggle. After ten(O), the output will be low if the applied magnetic field B is above
BON. The output will be high if B is below BOFF. In case
of sensors with an inverted switching behavior
(HAL211), the output state will be high if B > BOFF and
low if B < BON.
For magnetic fields between BOFF and BON, the output
state of the HAL sensor after applying VDD will be
either low or high. In order to achieve a well-defined
output state, the applied magnetic field must be above
BONmax, respectively, below BOFFmin.
If IOUT > IDD, please contact Micronas application support for detailed instructions on calculating ambient
temperature.
4.3. HAL22y Operation
For typical values, use the typical parameters. For
worst case calculation, use the max. parameters for
IDD and Rth, and the max. value for VDD from the
application.
All sensors fulfill the electrical and magnetic characteristics when operated within the Recommended Operating Conditions (see page 10).
For all sensors, the junction temperature range TJ is
specified. The maximum ambient temperature TAmax
can be calculated as:
Supply Voltage Below 4.3 V
T Amax = T Jmax – ΔT
4.3.1. Extended Operating Conditions
The devices contain a Power-on Reset (POR) and a
undervoltage reset. For VDD < Vreset the output state is
high. For Vreset < VDD < 4.3 V the device responds to
the magnetic field according to the specified magnetic
characteristics.
Note: The functionality of the sensor below 4.3 V is not
tested. For special test conditions, please contact Micronas.
4.2. HAL20y, HAL21y Operation
4.2.1. Extended Operating Conditions
All sensors fulfill the electrical and magnetic characteristics when operated within the Recommended Operating Conditions (see page 10).
Supply Voltage Below 3.8 V
Typically, the sensors operate with supply voltages
above 3 V, however, below 3.8 V some characteristics
may be outside the specification.
4.3.2. Start-up Behavior
Due to the active offset compensation, the sensors
have an initialization time (enable time ten(O)) after
applying the supply voltage. The parameter ten(O) is
specified in Section 3.6.: Characteristics on page 10.
During the initialization time, the output state for the
HAL22y is ‘Off-state‘ (i.e. Output High). After ten(O), the
output will high. The output will be switched to low if
the magnetic field B is above BON.
Note: The functionality of the sensor below 3.8 V is
not tested. For special test conditions, please
contact Micronas.
Micronas
Jan. 11, 2010; DSH000141_003EN
15
HAL 2xy
DATA SHEET
4.4. EMC and ESD
For applications with disturbances on the supply line or
radiated disturbances, a series resistor and a capacitor
are recommended (see Fig. 4–1). The series resistor
and the capacitor should be placed as closely as
possible to the HAL sensor.
Applications with this arrangement passed the EMC
tests according to the product standards ISO 7637.
Please contact Micronas for the detailed investigation
reports with the EMC and ESD results.
RV
220 Ω
1
RL
VDD
VEMC
VP
1.2 kΩ
OUT
3
4.7 nF
20 pF
2 GND
Fig. 4–1: Test circuit for EMC investigations
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Jan. 11, 2010; DSH000141_003EN
Micronas
HAL 2xy
DATA SHEET
5. Data Sheet History
1. Advance Information: “HAL2xy Hall-Effect Sensor
Family”, June 21, 2006, 6251-703-1AI. First release
of the advance information.
2. Advance Information: “HAL2xy Hall-Effect Sensor
Family”, Jan. 17, 2007, AI000007_002EN. Second
release of the advance information. Major changes:
– Type HAL220 added
3. Data Sheet: “HAL2xy Hall-Effect Sensor Family”,
Aug. 24, 2007, DSH000141_001EN. First release of
the data sheet. Major changes:
– Section 3.1. Outline Dimensions updated
– Section 3.2. Dimensions of Sensitive Area updated
– Section 3.6. Characteristics updated
– Section 3.7. Magnetic Characteristics Overview
updated
– Type HAL206 added
– Type HAL207 added
– Type HAL221 added
4. Data Sheet: “HAL 2xy Hall-Effect Sensor Family”,
June 11, 2008, DSH000141_002EN. Second
release of the data sheet. Major changes:
– Type HAL208 added
– Type HAL210 added
– Section 3.1. Outline Dimensions:
drawing TO92UA-5 (spread leads) removed
– Section 3.7. Magnetic Characteristics Overview:
HAL 221 and values for hysteresis BHYS updated
5. Data Sheet: “HAL 2xy Hall-Effect Sensor Family”,
Jan. 11, 2010, DSH000141_003EN. Second
release of the data sheet. Major changes:
– Type HAL 211 added
– Type HAL 212 added
– Explanation on page 5 added: “Unipolar Switching
Sensors with Inverted Output Sensitive to North
Pole”
Micronas GmbH
Hans-Bunte-Strasse 19 ⋅ D-79108 Freiburg ⋅ P.O. Box 840 ⋅ D-79008 Freiburg, Germany
Tel. +49-761-517-0 ⋅ Fax +49-761-517-2174 ⋅ E-mail: [email protected] ⋅ Internet: www.micronas.com
17
Jan. 11, 2010; DSH000141_003EN
Micronas
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