ON NTB75N06T4 Power mosfet Datasheet

NTP75N06, NTB75N06
Power MOSFET
75 Amps, 60 Volts, N−Channel
TO−220 and D2PAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
http://onsemi.com
75 AMPERES, 60 VOLTS
RDS(on) = 9.5 m
Features
• Pb−Free Packages are Available
N−Channel
D
Typical Applications
•
•
•
•
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
G
S
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
60
Vdc
Drain−to−Gate Voltage (RGS = 10 M)
VDGR
60
Vdc
Gate−to−Source Voltage
− Continuous
− Non−Repetitive (tp10 ms)
Drain Current
− Continuous @ TA = 25°C
− Continuous @ TA = 100°C
− Single Pulse (tp10 s)
Total Power Dissipation @ TA = 25°C
Derate above 25°C
Total Power Dissipation @ TA = 25°C
VGS
VGS
4
ID
ID
IDM
PD
20
30
75
50
225
Adc
214
1.4
2.4
W
W/°C
W
TO−220
CASE 221A
STYLE 5
−55 to
+175
°C
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 50 Vdc, VGS = 10 Vdc, L = 0.3 mH
IL(pk) = 75 A, VDS = 60 Vdc)
EAS
844
mJ
1
2
1
Gate
3
°C/W
0.7
62.5
TL
260
4
Drain
2
3
D2PAK
CASE 418B
STYLE 2
75N06
AYWW
2
1
3
Drain
Gate
Source
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
3
Source
2
Drain
4
RJC
RJA
75N06
AYWW
Apk
TJ, Tstg
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
4
Drain
Vdc
Operating and Storage Temperature Range
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient
MARKING
DIAGRAMS
75N06
A
Y
WW
= Device Code
= Assembly Location
= Year
= Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
 Semiconductor Components Industries, LLC, 2004
August, 2004 − Rev. 2
1
Publication Order Number:
NTP75N06/D
NTP75N06, NTB75N06
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Drain−to−Source Breakdown Voltage (Note 1)
(VGS = 0 Vdc, ID = 250 Adc)
Temperature Coefficient (Positive)
V(BR)DSS
Min
Typ
Max
Unit
60
−
71
73
−
−
−
−
−
−
10
100
−
−
±100
2.0
−
2.8
8.0
4.0
−
−
8.2
9.5
−
−
0.72
0.63
0.86
−
gFS
−
40.2
−
mhos
Ciss
−
3220
4510
pF
Coss
−
1020
1430
Crss
−
234
330
td(on)
−
16
25
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)
IDSS
Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
IGSS
Vdc
mV/°C
Adc
nAdc
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage (Note 1)
(VDS = VGS, ID = 250 Adc)
Threshold Temperature Coefficient (Negative)
VGS(th)
Static Drain−to−Source On−Resistance (Note 1)
(VGS = 10 Vdc, ID = 37.5 Adc)
RDS(on)
Static Drain−to−Source On−Voltage (Note 1)
(VGS = 10 Vdc, ID = 75 Adc)
(VGS = 10 Vdc, ID = 37.5 Adc, TJ = 150°C)
VDS(on)
Forward Transconductance (Note 1) (VDS = 15 Vdc, ID = 37.5 Adc)
Vdc
mV/°C
m
Vdc
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)
Output Capacitance
Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 2)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
(VDD = 30 Vdc, ID = 75 Adc,
VGS = 10 Vdc, RG = 9.1 ) (Note 1)
Fall Time
Gate Charge
(VDS = 48 Vdc,
Vd ID = 75 Adc,
Ad
VGS = 10 Vdc) (Note 1)
ns
tr
−
112
155
td(off)
−
90
125
tf
−
100
140
QT
−
92
130
Q1
−
14
−
Q2
−
44
−
VSD
−
−
1.0
0.9
1.1
−
Vdc
trr
−
77
−
ns
ta
−
49
−
tb
−
28
−
QRR
−
0.16
−
nC
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(IS = 75 Adc, VGS = 0 Vdc) (Note 1)
(IS = 75 Adc, VGS = 0 Vdc, TJ = 150°C)
Reverse Recovery Time
(IS = 75 Adc,
Ad VGS = 0 Vdc,
Vd
dIS/dt = 100 A/s) (Note 1)
Reverse Recovery Stored Charge
1. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperatures.
http://onsemi.com
2
C
NTP75N06, NTB75N06
160
VGS = 10 V
140
VGS = 6.5 V
120
VGS = 7 V
100
ID, DRAIN CURRENT (AMPS)
ID, DRAIN CURRENT (AMPS)
160
VGS = 6 V
VGS = 8 V
80
VGS = 5.5 V
VGS = 9 V
60
40
VGS = 5 V
20
VGS = 4.5 V
2
3
4
80
60
40
TJ = 25°C
20
TJ = 100°C
3.5
3
TJ = −55°C
4
4.5
5
5.5
6
6.5
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
VGS = 10 V
TJ = 100°C
0.013
0.011
TJ = 25°C
0.009
RDS(on), DRAIN−TO−SOURCE RESISTANCE ()
VGS, GATE−TO−SOURCE VOLTAGE (V)
0.015
7
0.015
VGS = 15 V
0.013
TJ = 100°C
0.011
0.009
TJ = 25°C
0.007
0.007
TJ = −55°C
0.005
TJ = −55°C
0.005
0.003
0.003
0
20
40
60
80
100
120
140
160
0
20
40
60
80
100
120
140
160
ID, DRAIN CURRENT (AMPS)
ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
10000
2
1.8
100
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
ID = 37.5 A
VGS = 10 V
VGS = 0 V
1.6
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE RESISTANCE ()
RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
1
120
0
2.5
0
0
VDS 10 V
140
1.4
1.2
1
TJ = 150°C
1000
TJ = 125°C
TJ = 100°C
100
0.8
0.6
−50
10
−25
0
25
50
75
100
125
150
0
175
10
20
30
40
50
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
http://onsemi.com
3
60
VGS, GATE−TO−SOURCE VOLTAGE (V)
NTP75N06, NTB75N06
10000
C, CAPACITANCE (pF)
VDS = 0 V
VGS = 0 V
TJ = 25°C
8000
Ciss
6000
Crss
Ciss
4000
Coss
2000
Crss
0
10
VGS 0 VDS
5
5
10
15
20
25
VGS
8
Q1
Q2
6
4
2
0
ID = 75 A
TJ = 25°C
0
tr
td(off)
10
td(on)
VDS = 30 V
ID = 75 A
VGS = 5 V
1
1
10
70
40
50
60
70
80
90
100
VGS = 0 V
TJ = 25°C
60
50
40
30
20
10
0
0.6
100
0.64 0.68 0.72 0.76 0.8
0.84 0.86 0.92 0.96
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variations
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
EAS, SINGLE PULSE DRAIN−TO−SOURCE
AVALANCHE ENERGY (mJ)
RG, GATE RESISTANCE ()
1000
VGS = 20 V
SINGLE PULSE
TC = 25°C
10 s
100
100 s
1 ms
10
10 ms
dc
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1
0.1
30
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
tf
1000
20
Figure 7. Capacitance Variation
80
100
10
Qg, TOTAL GATE CHARGE (nC)
IS, SOURCE CURRENT (AMPS)
t, TIME (ns)
QT
10
GATE−TO−SOURCE OR DRAIN−TO−SOURCE (V)
1000
ID, DRAIN CURRENT (AMPS)
12
1
10
100
ID = 75 A
800
600
400
200
0
25
50
75
100
125
150
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
http://onsemi.com
4
1
175
r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
NTP75N06, NTB75N06
1.0
D = 0.5
0.2
0.1
0.1
P(pk)
0.05
0.02
t1
0.01
t2
DUTY CYCLE, D = t1/t2
SINGLE PULSE
0.01
0.00001
0.0001
0.001
0.01
t, TIME (s)
0.1
RJC(t) = r(t) RJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) RJC(t)
1.0
10
Figure 13. Thermal Response
ORDERING INFORMATION
Package
Shipping†
TO−220
50 Units/Rail
TO−220
(Pb−Free)
50 Units/Rail
NTB75N06
D2PAK
50 Units/Rail
NTB75N06G
D2PAK
50 Units/Rail
Device
NTP75N06
NTP75N06G
(Pb−Free)
NTB75N06T4
NTB75N06T4G
D2PAK
800 Tape & Reel
D2PAK
(Pb−Free)
800 Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
5
NTP75N06, NTB75N06
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AA
−T−
B
SEATING
PLANE
C
F
T
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
1 2 3
U
H
K
Z
L
R
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
J
G
D
N
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.018
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
−−−
−−−
0.080
STYLE 5:
PIN 1.
2.
3.
4.
http://onsemi.com
6
GATE
DRAIN
SOURCE
DRAIN
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
−−−
−−−
2.04
NTP75N06, NTB75N06
PACKAGE DIMENSIONS
D2PAK
CASE 418B−04
ISSUE J
C
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 418B−01 THRU 418B−03 OBSOLETE,
NEW STANDARD 418B−04.
E
V
W
−B−
4
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
S
V
A
1
2
S
3
−T−
SEATING
PLANE
K
W
J
G
D
H
3 PL
0.13 (0.005)
M
T B
M
INCHES
MIN
MAX
0.340 0.380
0.380 0.405
0.160 0.190
0.020 0.035
0.045 0.055
0.310 0.350
0.100 BSC
0.080
0.110
0.018 0.025
0.090
0.110
0.052 0.072
0.280 0.320
0.197 REF
0.079 REF
0.039 REF
0.575 0.625
0.045 0.055
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
VARIABLE
CONFIGURATION
ZONE
N
R
P
U
L
L
M
L
M
M
F
F
F
VIEW W−W
1
VIEW W−W
2
VIEW W−W
3
SOLDERING FOOTPRINT*
8.38
0.33
1.016
0.04
10.66
0.42
5.08
0.20
3.05
0.12
17.02
0.67
SCALE 3:1
mm inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
7
MILLIMETERS
MIN
MAX
8.64
9.65
9.65 10.29
4.06
4.83
0.51
0.89
1.14
1.40
7.87
8.89
2.54 BSC
2.03
2.79
0.46
0.64
2.29
2.79
1.32
1.83
7.11
8.13
5.00 REF
2.00 REF
0.99 REF
14.60 15.88
1.14
1.40
NTP75N06, NTB75N06
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 61312, Phoenix, Arizona 85082−1312 USA
Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada
Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
Japan: ON Semiconductor, Japan Customer Focus Center
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Phone: 81−3−5773−3850
http://onsemi.com
8
For additional information, please contact your
local Sales Representative.
NTP75N06/D