Fairchild FDS4559 60v complementary powertrenchï mosfet Datasheet

FDS4559_F085
tm
60V Complementary PowerTrenchMOSFET
General Description
Features
This complementary MOSFET device is produced using
Fairchild’s advanced PowerTrench process that has
been especially tailored to minimize the on-state
resistance and yet maintain low gate charge for
superior switching performance.
•
Q1: N-Channel
4.5 A, 60 V
RDS(on) = 75 mΩ @ VGS = 4.5V
•
Applications
Q2: P-Channel
–3.5 A, –60 V RDS(on) = 105 mΩ @ VGS = –10V
• DC/DC converter
RDS(on) = 135 mΩ @ VGS = –4.5V
• Power management
• LCD backlight inverter
•
Qualified to AEC Q101
•
RoHS Compliant
DD2
D1
D
3
Q1
Pin 1 SO-8
G1
S1 S
S
Drain-Source Voltage
Gate-Source Voltage
ID
Drain Current
2
8
1
TA = 25°C unless otherwise noted
Parameter
VDSS
VGSS
7
S
Absolute Maximum Ratings
Q1
- Continuous
- Pulsed
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
Q2
Units
60
–60
±20
4.5
20
±20
–3.5
–20
V
V
A
2
1.6
1.2
2
W
-55 to +150
°C
(Note 1a)
78
°C/W
(Note 1)
40
°C/W
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
4
6
G2
S2 G
Symbol
Q2
5
DD2
DD1
SO-8
PD
RDS(on) = 55 mΩ @ VGS = 10V
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
FDS4559
2008 Fairchild Semiconductor Corporation
Device
FDS4559_ F085
Reel Size
Tape width
Quantity
13”
12mm
2500 units
FDS4559_F085 Rev A (W)
FDS4559_F085 60V Complementary PowerTrench ® MOSFET
October 2008
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Type Min
Typ Max Units
Drain-Source Avalanche Ratings (Note 1)
W DSS
IAR
Single Pulse Drain-Source
Avalanche Energy
Maximum Drain-Source
Avalanche Current
VDD = 30 V,
ID = 4.5 A
Q1
90
mJ
Q1
4.5
A
Off Characteristics
BVDSS
∆BVDSS
∆TJ
IDSS
IGSS
Drain-Source Breakdown
Voltage
Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain
Current
Gate-Body Leakage
On Characteristics
VGS = 0 V, ID = 250 µA
VGS = 0 V, ID = –250 µA
ID = 250 µA, Referenced to 25°C
ID = –250 µA, Referenced to 25°C
VDS = 48 V, VGS = 0 V
VDS = –48 V, VGS = 0 V
VGS = +20 V, VDS = 0 V
VGS = +20 V, VDS = 0 V
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
60
–60
VDS = VGS, ID = 250 µA
VDS = VGS, ID = –250 µA
ID = 250 µA, Referenced to 25°C
ID = –250 µA, Referenced to 25°C
VGS = 10 V, ID = 4.5 A
VGS = 10 V, ID = 4.5 A, TJ = 125°C
VGS = 4.5 V, ID = 4 A
VGS = –10 V, ID = –3.5 A
VGS = –10 V, ID = –3.5 A, TJ = 125°C
VGS = –4.5 V, ID = –3.1 A
VGS = 10 V, VDS = 5 V
VGS = –10 V, VDS = –5 V
VDS = 10 V, ID = 4.5 A
VDS = –5 V, ID = –3 5 A
Q1
Q2
Q1
Q2
Q1
1
–1
Q1
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Q2
VDS = –30 V, VGS = 0 V,
f = 1.0 MHz
Q1
VDD = 30 V, ID = 1 A,
VGS = 10V, RGEN = 6 Ω
V
58
–49
mV/°C
1
–1
+100
+100
µA
3
–3
V
nA
(Note 2)
VGS(th)
Gate Threshold Voltage
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
ID(on)
On-State Drain Current
gFS
Forward Transconductance
Q2
Q1
Q2
Q1
Q2
2.2
–1.6
–5.5
4
42
72
55
82
130
105
mV/°C
55
94
75
105
190
135
20
–20
mΩ
A
14
9
S
Q1
Q2
Q1
Q2
Q1
Q2
650
759
80
90
35
39
pF
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
11
7
8
10
19
19
6
12
12.5
15
2.4
2.5
2.6
3.0
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer
Capacitance
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
pF
pF
(Note 2)
Q2
VDD = –30 V, ID = –1 A,
VGS = –10 V, RGEN = 6 Ω
Q1
VDS = 30 V, ID = 4.5 A, VGS = 10 V
Q2
VDS = –30 V, ID = –3.5 A, VGS = –10V
20
14
18
20
35
34
15
22
18
21
ns
ns
ns
ns
nC
nC
nC
FDS4559_F085 Rev A (W)
FDS4559_F085 60V Complementary PowerTrench ® MOSFET
Electrical Characteristics
Symbol
Parameter
(continued)
TA = 25°C unless otherwise noted
Test Conditions
Type Min
Typ Max Units
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward VGS = 0 V, IS = 1.3 A (Note 2)
Voltage
VGS = 0 V, IS = –1.3 A (Note 2)
Q1
Q2
Q1
Q2
0.8
–0.8
1.3
–1.3
1.2
–1.2
A
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 78°C/W when
mounted on a
2
0.5 in pad of 2 oz
copper
b) 125°C/W when
2
mounted on a .02 in
pad of 2 oz copper
c) 135°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDS4559_F085 Rev A (W)
FDS4559_F085 60V Complementary PowerTrench ® MOSFET
Electrical Characteristics
1.8
-ID, DRAIN CURRENT (A)
VGS = -10V
-6.0V
12
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
15
-4.5V
-4.0V
-5.0V
-3.5V
9
6
-3.0V
3
-2.5V
VGS = -3.5V
1.6
-4.0V
1.4
-4.5V
-5.0V
1.2
-6.0V
0
-10V
1
2
3
4
0
5
2
4
6
8
10
-ID, DRAIN CURRENT (A)
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
2
0.4
ID = -3.5A
VGS = -10V
1.8
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
-8.0V
1
0.8
0
1.6
1.4
1.2
1
0.8
0.6
0.4
ID = -1.5A
0.3
TA = 125oC
0.2
0.1
TA = 25oC
0
-50
-25
0
25
50
75
100
125
150
175
2
4
o
TJ, JUNCTION TEMPERATURE ( C)
6
8
10
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
TA = -55oC
VDS = -5V
-IS, REVERSE DRAIN CURRENT (A)
15
-ID, DRAIN CURRENT (A)
-7.0V
25oC
12
125oC
9
6
3
0
VGS = 0V
10
TA = 125oC
25oC
1
-55oC
0.1
0.01
0.001
1
2
3
4
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
5
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS4559_F085 Rev A (W)
FDS4559_F085 60V Complementary PowerTrench ® MOSFET
Typical Characteristics: Q2
1200
VDS = 10V
ID = -3.0A
20V
f = 1 MHz
V GS = 0 V
1000
8
30V
CAPACITANCE (pF)
-VGS, GATE-SOURCE VOLTAGE (V)
10
6
4
800
C ISS
600
400
2
200
C OSS
C RSS
0
0
0
4
8
12
16
0
10
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
30
40
50
60
Figure 8. Capacitance Characteristics.
40
P(pk), PEAK TRANSIENT POWER (W)
100
100µs
ID, DRAIN CURRENT (A)
20
-V DS , DRAIN TO SOURCE VOLTAGE (V)
RDS(ON) LIMIT
10
10ms
100ms
1
1s
10s
VGS = -10V
SINGLE PULSE
RθJA = 135oC/W
0.1
DC
TA = 25oC
0.01
0.1
1
10
100
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
SINGLE PULSE
RθJA = 135°C/W
TA = 25°C
30
20
10
0
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 10. Single Pulse Maximum
Power Dissipation.
FDS4559_F085 Rev A (W)
FDS4559_F085 60V Complementary PowerTrench ® MOSFET
Typical Characteristics: Q2
1.8
VGS = 10V
6.0V
16
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
ID, DRAIN-SOURCE CURRENT (A)
20
4.5V
5.0V
4.0V
12
8
3.5V
4
1.6
VGS = 4.0V
1.4
4.5V
5.0V
1.2
6.0V
8.0V
0.8
0
0
1
2
3
0
4
4
8
12
16
20
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 11. On-Region Characteristics.
Figure 12. On-Resistance Variation with
Drain Current and Gate Voltage.
0.14
2.2
ID = 2.3A
ID = 4.5A
VGS = 10V
2
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
10V
1
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
-50
-25
0
25
50
75
100
125
150
0.12
0.1
TA = 125oC
0.08
0.06
0.04
TA = 25oC
0.02
0
175
2
4
6
8
10
o
TJ, JUNCTION TEMPERATURE ( C)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 13. On-Resistance Variation with
Temperature.
Figure 14. On-Resistance Variation with
Gate-to-Source Voltage.
100
20
ID, DRAIN CURRENT (A)
25oC
IS, REVERSE DRAIN CURRENT (A)
TA = -55oC
VDS = 5V
o
16
125 C
12
8
4
VGS = 0V
10
TA = 125oC
1
25oC
0.1
-55oC
0.01
0.001
0.0001
0
1
2
3
4
5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 15. Transfer Characteristics.
6
0
0.2
0.4
0.6
0.8
1
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 16. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS4559_F085 Rev A (W)
FDS4559_F085 60V Complementary PowerTrench ® MOSFET
Typical Characteristics: Q1
ID = 4.5A
900
VDS = 10V
8
30V
f = 1MHz
VGS = 0 V
800
20V
CAPACITANCE (pF)
VGS, GATE-SOURCE VOLTAGE (V)
10
6
4
2
700
CISS
600
500
400
300
200
COSS
100
0
CRSS
0
0
2
4
6
8
10
12
14
0
10
Qg, GATE CHARGE (nC)
20
30
40
50
Figure 17. Gate Charge Characteristics.
Figure 18. Capacitance Characteristics.
100
40
SINGLE PULSE
RθJA = 135oC/W
RDS(ON) LIMIT
100µs
10
TA = 25oC
30
1m
POWER (W)
ID, DRAIN CURRENT (A)
60
VDS, DRAIN TO SOURCE VOLTAGE (V)
10ms
100ms
1
1s
DC
VGS= 10V
SINGLE PULSE
RθJA= 135oC/W
0.1
20
10
TA= 25oC
0.01
0.1
1
10
0
0.01
100
0.1
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 19. Maximum Safe Operating Area.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
1
10
100
1000
SINGLE PULSE TIME (SEC)
Figure 20. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RθJA(t) = r(t) + RθJA
RθJA = 135°C/W
0.2
0.1
0.1
0.05
P(pk)
0.02
0.01
t1
0.01
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 21. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS4559_F085 Rev A (W)
FDS4559_F085 60V Complementary PowerTrench ® MOSFET
Typical Characteristics: Q1
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As used herein:
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intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2.
A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
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Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
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Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
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Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I37
FDS4559_F085 Rev A (W)
FDS4559_F085 60V Complementary PowerTrench ® MOSFET
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