H11AA1M, H11AA2M, H11AA3M, H11AA4M AC Input/Phototransistor Optocouplers Features Description ■ Bi-polar emitter input The H11AAXM series consists of two gallium-arsenide infrared emitting diodes connected in inverse parallel driving a single silicon phototransistor output. ■ Built-in reverse polarity input protection ■ Underwriters Laboratory (UL) recognized File #E90700, Volume 2 ■ VDE approved File #102497 (ordering option ‘V’) Applications ■ AC line monitor ■ Unknown polarity DC sensor ■ Telephone line interface Schematic Package Outlines 1 6 BASE 2 5 COLL 3 4 EMITTER ©2006 Fairchild Semiconductor Corporation H11AA1M, H11AA2M, H11AA3M, H11AA4M Rev. 1.0.3 www.fairchildsemi.com H11AA1M, H11AA2M, H11AA3M, H11AA4M — AC Input/Phototransistor Optocouplers September 2009 Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Symbol Parameter Device Value Units -40 to +150 °C TOTAL DEVICE TSTG Storage Temperature All TOPR Operating Temperature All -40 to +100 °C TSOL Lead Solder Temperature All 260 for 10 sec °C Total Device Power Dissipation All 250 mW 2.94 mW/°C PD Derate Linearly From 25°C EMITTER IF IF(pk) PD Continuous Forward Current All 60 mA Forward Current – Peak (1µs pulse, 300 pps) All ±1.0 A LED Power Dissipation All 120 mW 1.41 mW/°C Derate Linearly From 25°C DETECTOR IC Continuous Collector Current All 50 mA PD Detector Power Dissipation All 150 mW 1.76 mW/°C Derate linearity from 25°C ©2006 Fairchild Semiconductor Corporation H11AA1M, H11AA2M, H11AA3M, H11AA4M Rev. 1.0.3 www.fairchildsemi.com 2 H11AA1M, H11AA2M, H11AA3M, H11AA4M — AC Input/Phototransistor Optocouplers Absolute Maximum Ratings (TA =25°C Unless otherwise specified) Individual Component Characteristics Symbol Parameter Test Conditions Device Min. Typ.* Max. 1.5 Unit EMITTER VF Input Forward Voltage IF = ±10mA All 1.17 CJ Capacitance VF = 0 V, f = 1.0MHz All 80 pF V DETECTOR BVCEO Breakdown Voltage Collector to Emitter IC = 1.0mA, IF = 0 All 30 100 V BVCBO Collector to Base IC = 100µA, IF = 0 All 70 120 V BVEBO Emitter to Base IE = 100µA, IF = 0 All 5 10 V BVECO Emitter to Collector IE = 100µA, IF = 0 All 7 10 V ICEO Leakage Current Collector to Emitter VCE = 10 V, IF = 0 H11AA1M H11AA3M H11AA4M 1 50 H11AA2M 1 200 nA CCE Capacitance Collector to Emitter VCE = 0, f = 1MHz All 10 pF CCB Collector to Base VCB = 0, f = 1MHz All 80 pF CEB Emitter to Base VEB = 0, f = 1MHz All 15 pF *Typical values at TA = 25°C Transfer Characteristics Symbol CTRCE VCE(SAT) Characteristics Current Transfer Ratio, Collector to Emitter Test Conditions Device Min. IF = ±10mA, VCE = 10V H11AA4M 100 H11AA3M 50 H11AA1M 20 H11AA2M 10 .33 Current Transfer Ratio, Symmetry IF = ±10mA, VCE = 10V (Figure 11) All Saturation Voltage, Collector to Emitter IF = ±10mA, ICE = 0.5mA All Typ.* Max. Units % 3.0 .40 V Isolation Characteristics Symbol Characteristic Test Conditions Min. Typ.* Units CI-O Package Capacitance Input/Output VI-O = 0, f = 1MHz VISO Isolation Voltage f = 60Hz, t = 1 sec. 7500 Vac(pk) VI-O = 500 VDC 1011 Ω RISO Isolation Resistance 0.7 Max. pF *Typical values at TA = 25°C ©2006 Fairchild Semiconductor Corporation H11AA1M, H11AA2M, H11AA3M, H11AA4M Rev. 1.0.3 www.fairchildsemi.com 3 H11AA1M, H11AA2M, H11AA3M, H11AA4M — AC Input/Phototransistor Optocouplers Electrical Characteristics (TA = 25°C Unless otherwise specified.) As per IEC 60747-5-2, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits. Symbol Parameter Min. Typ. Max. Unit Installation Classifications per DIN VDE 0110/1.89 Table 1 For Rated Main Voltage < 150Vrms I-IV For Rated Main voltage < 300Vrms I-IV Climatic Classification 55/100/21 Pollution Degree (DIN VDE 0110/1.89) 2 CTI Comparative Tracking Index 175 VPR Input to Output Test Voltage, Method b, VIORM x 1.875 = VPR, 100% Production Test with tm = 1 sec, Partial Discharge < 5pC 1594 Vpeak Input to Output Test Voltage, Method a, VIORM x 1.5 = VPR, Type and Sample Test with tm = 60 sec, Partial Discharge < 5pC 1275 Vpeak VIORM Max. Working Insulation Voltage 850 Vpeak VIOTM Highest Allowable Over Voltage 6000 Vpeak External Creepage 7 mm External Clearance 7 mm Insulation Thickness 0.5 mm Insulation Resistance at Ts, VIO = 500V 109 Ω RIO ©2006 Fairchild Semiconductor Corporation H11AA1M, H11AA2M, H11AA3M, H11AA4M Rev. 1.0.3 www.fairchildsemi.com 4 H11AA1M, H11AA2M, H11AA3M, H11AA4M — AC Input/Phototransistor Optocouplers Safety and Insulation Ratings Fig. 2 Normalized CTR vs. Forward Current Fig. 1 Input Voltage vs. Input Current 100 1.4 TA = 25°C TA = 25°C VCE = 5V 80 Normalized to IF = 10mA 60 1.0 40 NORMALIZED CTR I F – INPUT CURRENT (mA) 1.2 20 0 -20 -40 0.8 0.6 0.4 -60 0.2 -80 0.0 -100 -2.0 -1.5 -1.0 -0.5 0.0 0.5 1.0 1.5 0 2.0 5 20 1.0 NORMALIZED CTR ( CTRRBE / CTRRBE(OPEN)) VCE = 5V Normalized to IF = 10mA, TA = 25°C 1.2 IF = 10mA NORMALIZED CTR 15 Fig. 4 CTR vs. RBE (Unsaturated) Fig. 3 Normalized CTR vs. Ambient Temperature 1.4 1.0 IF = 5mA 0.8 IF = 20mA 0.6 0.4 0.2 -60 -40 -20 0 20 40 60 80 V 0.9 CE = 5V TA = 25°C 0.8 0.7 IF = 20mA 0.6 IF = 10mA 0.5 IF = 5mA 0.4 0.3 0.2 0.1 0.0 100 10 100 Fig. 6 Collector-Emitter Saturation Voltage vs Collector Current VCE (SAT) – COLLECTOR-EMITTER SATURATION VOLTAGE (V) Fig. 5 CTR vs. RBE (Saturated) 1.0 V 0.9 CE = 0.3V TA = 25°C 0.8 0.7 IF = 20mA 0.6 IF = 10mA 0.5 IF = 5mA 0.4 0.3 0.2 0.1 0.0 10 100 1000 RBE- BASE RESISTANCE (k Ω) ©2006 Fairchild Semiconductor Corporation H11AA1M, H11AA2M, H11AA3M, H11AA4M Rev. 1.0.3 1000 RBE – BASE RESISTANCE (kΩ) TA – AMBIENT TEMPERATURE (°C) NORMALIZED CTR ( CTRRBE / CTRRBE(OPEN)) 10 IF – FORWARD CURRENT (mA) VF – INPUT VOLTAGE (V) 100 T = 25°C A 10 1 IF = 2.5mA IF = 5mA 0.1 IF = 10mA 0.01 0.001 0.01 0.1 IF = 20mA 1 10 IC - COLLECTOR CURRENT (mA) www.fairchildsemi.com 5 H11AA1M, H11AA2M, H11AA3M, H11AA4M — AC Input/Phototransistor Optocouplers Typical Performance Characteristics Fig. 7 Switching Speed vs. Load Resistor Fig. 8 Normalized ton vs. RBE 1000 7 SWITCHING SPEED (µs) A NORMALIZED ton – (ton(RBE) / ton(open)) IF = 10mA VCC = 10V T = 25°C Toff 100 Tf 10 Ton Tr 1 VCC = 10V IC = 2mA RL = 100Ω T = 25°C 6 A 5 4 3 2 1 0 0.1 0.1 1 10 10 100 100 10000 100000 Fig. 10 Dark Current vs. Ambient Temperature Fig. 9 Normalized toff vs. RBE 10000 3.0 VCC = 10V IC = 2mA RL = 100Ω T = 25°C 2.5 ICEO – COLLECTOR -EMITTER DARK CURRENT (nA) NORMALIZED toff – (toff(RBE) / toff(open)) 1000 RBE- BASE RESISTANCE (k Ω) R – LOAD RESISTOR (kΩ) A 2.0 1.5 1.0 0.5 1000 100 VCE = 10V VCE = 30V 10 1 0.1 0.0 10 100 1000 10000 0 100000 20 40 60 80 100 TA – AMBIENT TEMPERATURE (°C) RBE – BASE RESISTANCE (kΩ) Fig. 11 Output Symmetry Characteristics 10 NORMALIZED OUTPUT CURRENT 5 1 IF = I - 10mA I IF = I 10mA I .5 NORMALIZED TO: VCE = 10 V IF = 10 mA .1 .05 THE MAXIMUM PEAK OUTPUT CURRENT WILL BE NO MORE THAN THREE TIMES THE MINIMUM PEAK OUTPUT CURRENT AT IF = ±10 mA .01 .005 .01 .05 .1 .5 1 5 10 VCE – COLLECTOR TO EMITTER VOLTAGE (V) ©2006 Fairchild Semiconductor Corporation H11AA1M, H11AA2M, H11AA3M, H11AA4M Rev. 1.0.3 www.fairchildsemi.com 6 H11AA1M, H11AA2M, H11AA3M, H11AA4M — AC Input/Phototransistor Optocouplers Typical Performance Characteristics (Continued) Through Hole 0.4" Lead Spacing 8.13–8.89 6 4 8.13–8.89 6 4 1 3 6.10–6.60 6.10–6.60 Pin 1 1 3 Pin 1 5.08 (Max.) 0.25–0.36 7.62 (Typ.) 3.28–3.53 5.08 (Max.) 0.25–0.36 3.28–3.53 0.38 (Min.) 2.54–3.81 0.38 (Min.) 2.54–3.81 0.20–0.30 2.54 (Bsc) (0.86) 15° (Typ.) 2.54 (Bsc) (0.86) 0.41–0.51 1.02–1.78 0.20–0.30 0.41–0.51 0.76–1.14 10.16–10.80 1.02–1.78 0.76–1.14 Surface Mount (1.78) 8.13–8.89 6 4 (1.52) (2.54) (7.49) 6.10–6.60 8.43–9.90 (10.54) 1 3 (0.76) Pin 1 Rcommended Pad Layout 0.25–0.36 3.28–3.53 5.08 (Max.) 0.38 (Min.) 0.20–0.30 2.54 (Bsc) (0.86) 0.16–0.88 (8.13) 0.41–0.51 1.02–1.78 0.76–1.14 Note: All dimensions in mm. ©2006 Fairchild Semiconductor Corporation H11AA1M, H11AA2M, H11AA3M, H11AA4M Rev. 1.0.3 www.fairchildsemi.com 7 H11AA1M, H11AA2M, H11AA3M, H11AA4M — AC Input/Phototransistor Optocouplers Package Dimensions Option Order Entry Identifier (Example) No option H11AA1M S H11AA1SM SR2 H11AA1SR2M T H11AA1TM 0.4" Lead Spacing V H11AA1VM VDE 0884 TV H11AA1TVM VDE 0884, 0.4" Lead Spacing SV H11AA1SVM VDE 0884, Surface Mount SR2V H11AA1SR2VM Description Standard Through Hole Device Surface Mount Lead Bend Surface Mount; Tape and Reel VDE 0884, Surface Mount, Tape and Reel Marking Information 1 V 3 H11AA1 2 X YY Q 6 4 5 Definitions 1 Fairchild logo 2 Device number 3 VDE mark (Note: Only appears on parts ordered with VDE option – See order entry table) 4 One digit year code, e.g., ‘3’ 5 Two digit work week ranging from ‘01’ to ‘53’ 6 Assembly package code *Note – Parts that do not have the ‘V’ option (see definition 3 above) that are marked with date code ‘325’ or earlier are marked in portrait format. ©2006 Fairchild Semiconductor Corporation H11AA1M, H11AA2M, H11AA3M, H11AA4M Rev. 1.0.3 www.fairchildsemi.com 8 H11AA1M, H11AA2M, H11AA3M, H11AA4M — AC Input/Phototransistor Optocouplers Ordering Information 12.0 ± 0.1 4.5 ± 0.20 2.0 ± 0.05 Ø1.5 MIN 4.0 ± 0.1 0.30 ± 0.05 1.75 ± 0.10 11.5 ± 1.0 21.0 ± 0.1 9.1 ± 0.20 Ø1.5 ± 0.1/-0 10.1 ± 0.20 0.1 MAX 24.0 ± 0.3 User Direction of Feed Reflow Profile 300 260°C 280 260 >245°C = 42 Sec 240 220 200 180 °C Time above 183°C = 90 Sec 160 140 120 1.822°C/Sec Ramp up rate 100 80 60 40 33 Sec 20 0 0 60 120 180 270 360 Time (s) ©2006 Fairchild Semiconductor Corporation H11AA1M, H11AA2M, H11AA3M, H11AA4M Rev. 1.0.3 www.fairchildsemi.com 9 H11AA1M, H11AA2M, H11AA3M, H11AA4M — AC Input/Phototransistor Optocouplers Carrier Tape Specification Auto-SPM™ Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® EfficentMax™ EZSWITCH™* ™* ® ® Fairchild Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FETBench™ FlashWriter®* FPS™ F-PFS™ FRFET® SM Global Power Resource Green FPS™ Green FPS™ e-Series™ Gmax™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC® ® OPTOPLANAR ® PDP SPM™ Power-SPM™ PowerTrench® PowerXS™ Programmable Active Droop™ QFET® QS™ Quiet Series™ RapidConfigure™ ™ Saving our world, 1mW/W/kW at a time™ SmartMax™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS™ SyncFET™ Sync-Lock™ ® * The Power Franchise® TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ TriFault Detect™ TRUECURRENT™* µSerDes™ UHC® Ultra FRFET™ UniFET™ VCX™ VisualMax™ XS™ * Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I40 ©2006 Fairchild Semiconductor Corporation H11AA1M, H11AA2M, H11AA3M, H11AA4M Rev. 1.0.3 www.fairchildsemi.com 10 H11AA1M, H11AA2M, H11AA3M, H11AA4M — AC Input/Phototransistor Optocouplers TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.