ACCUTEK AK581024G 262,144 x 8 bit mos dynamic random access memory Datasheet

Accutek
Microcircuit
Corporation
AK48256S / AK48256G
262,144 X 8 Bit MOS
Dynamic Random Access Memory
DESCRIPTION
Front View
The Accutek AK48256 high density memory modules is a random
access memory organized in 256K x 8 bit words. The assembly
consists of eight standard 256K x 1 DRAMs in plastic leaded chip
carriers (PLCC) mounted on the front side of a printed circuit board.
The module can be configured as a leadless 30 pad SIM or a leaded
30 pin SIP. This packaging approach provides a 6 to 1 density increase over standard DIP packaging.
30-Pin SIM
30
1
30-Pin SIP
The operation of the AK48256 is identical to eight 256K x 1 DRAMs.
The data input is tied to the data output and brought out separately
for each device, with common RAS, CAS and WE control. This
common I/O feature dictates the use of early-write cycles to prevent
contention of D and Q. Since the Write-Enable (WE) signal must always go low before CAS in a write cycle, Read-Write and
Read-Modify-Write operation is not possible.
1
FEATURES
· 262,144 by 8 bit organization
· Optional 30 Pad leadless SIM (Single In-Line Module) or 30
Pin leaded SIP (Single In-Line Package)
· JEDEC standard pinout
· Each device has common D and Q lines with common RAS,
CAS and WE control
· 2.8 Watt active and 180 mW standby (max)
· Operating free air temperature 00C to 700C
· Upward compatible with AK481024, AK581024, AK584096 and
AK5816384
· Functionally and Pin compatible with AK58256A
PIN NOMENCLATURE
PIN ASSIGNMENT
FUNCTIONAL DIAGRAM
PIN #
SYMBOL
PIN #
SYMBOL
1
Vcc
16
DQ5
Data In / Data Out
2
CAS
17
A8
CAS
Column Address Strobe
3
DQ!
18
NC
RAS
Row Address Strobe
4
A0
19
NC
5
A1
20
DQ6
A0 - A8
Address Inputs
DQ1 - DQ8
WE
Write Enable
6
DQ2
21
WE
Vcc
5v Supply
7
A2
22
Vss
Vss
Ground
DQ7
NC
No Connect
MODULE OPTIONS
Leadless SIM: AK48256S
Leaded SIP: AK48256G
8
A3
23
9
Vss
24
NC
10
DQ3
25
DQ8
11
A4
26
NC
12
A5
27
RAS
13
DQ4
28
NC
14
A6
29
NC
15
A7
30
Vcc
MECHANICAL DIMENSIONS
ORDERING INFORMATION
PART NUMBER CODING INTERPRETATION
Position
1
2
3
6
Inches
7
8
0.425
0.375
.100
.060
0.325
0.275
1
1
0.100
T.P.
3.525
3.475
3.100
3.090
30
0.100
TYP
0.200"
MAX
0.053
0.047
Product
AK = Accutek Memory
Type
4 = Dynamic RAM
5 = CMOS Dynamic RAM
6 = Static RAM
Organization/Word Width
1 = by 1 16 = by 16
4 = by 4 32 = by 32
8 = by 8 36 = by 36
9 = by 9
Size/Bits Depth
64 = 64K
4096 = 4 MEG
256 = 256K
8192 = 8 MEG
1024 = 1 MEG 16384 = 16 MEG
Package Type
G = Single In-Line Package (SIP)
S = Single In-Line Module (SIM)
D = Dual In-Line Package (DIP)
W = .050 inch Pitch Edge Connect
Z = Zig-Zag In-Line Package (ZIP)
Special Designation
P = Page Mode
N = Nibble Mode
K = Static Column Mode
W = Write Per Bit Mode
V = Video Ram
Separator
- = Commercial 00C to +700C
M = Military Equivalent Screened
(-550C to +1250C)
I = Industrial Temperature Tested
(-450C to +850C)
X = Burned In
Speed (first two significant digits)
DRAMS
SRAMS
50 = 50 nS
8 =
8 nS
60 = 60 nS
10 = 10 nS
70 = 70 nS
12 = 12 nS
80 = 80 nS
15 = 15 nS
0.024
0.016
8
5
0.685
0.635
7
4
0.100
TYP
6
3
0.100
TYP
5
2
0.685
0.635
4
1
The numbers and coding on this page do not include all variations
available but are show as examples of the most widely used variations.
Contact Accutek if other information is required.
EXAMPLES:
AK48256SP-10
256K x 8, 100 nSEC DRAM 30 pin SIM Configuration, Page Mode
AK48256GK-80
256K x 8, 80 nSEC DRAM 30 pin SIP Configuration, Static Column Mode
ACCUTEK MICROCIRCUIT CORPORATION
BUSINESS CENTER at NEWBURYPORT
2 NEW PASTURE ROAD, SUITE 1
NEWBURYPORT, MA 01950-4054
VOICE: 978-465-6200 FAX: 978-462-3396
Email:
[email protected]
Internet: www.accutekmicro.com
Accutek reserves the right to make changes in specifications at any
time and without notice. Accutek does not assume any responsibility for the use of any circuitry described; no circuit patent licenses
are implied. Preliminary data sheets contain minimum and maximum limits based upon design objectives, which are subject to
change upon full characterization over the specific operating conditions.
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