DMG4800LSD DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS(on) max ID max TA = +25°C 16mΩ @ VGS = 10V 9.8A Low Qg - minimizes switching losses 8.4A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) V(BR)DSS 30V Features and Benefits 22mΩ @ VGS = 4.5V 100% avalanche rated part Low RDS(on) - minimizes conduction losses Description Qualified to AEC-Q101 standards for High Reliability PPAP Capable (Note 4) This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it Mechanical Data ideal for high efficiency power management applications. Applications Case: SO-8 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Backlighting Power Management Functions DC-DC Converters Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See Diagram Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e3 Weight: 0.076 grams (approximate) Top View D1 SO-8 G1 Top View G2 S1 Pin Configuration Internal Schematic D2 N-Channel MOSFET S2 N-Channel MOSFET Ordering Information (Notes 4 & 5) Part Number DMG4800LSD-13 DMG4800LSDQ-13 Notes: Compliance Standard Automotive Case SO-8 SO-8 Packaging 2,500 / Tape & Reel 2,500 / Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q10x and standard products are electrically and thermally the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/. 5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information 8 5 8 5 G4800LD G4800LD YY WW YY WW 1 4 Chengdu A/T Site DMG4800LSD Document number: DS31858 Rev. 7 - 2 = Manufacturer’s Marking G4800LD = Product Type Marking Code YYWW = Date Code Marking YY or YY = Year (ex: 14 = 2014) WW = Week (01 - 53) YY = Date Code Marking for SAT (Shanghai Assembly/ Test site) YY = Date Code Marking for CAT (Chengdu Assembly/ Test site) 1 4 Shanghai A/T Site 1 of 6 www.diodes.com July 2014 © Diodes Incorporated DMG4800LSD Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 7) VGS = 10V Steady State t<10s Continuous Drain Current (Note 7) VGS = 4.5V Steady State t<10s TA = +25°C TA = +70°C TA = +25°C TA = +70°C TA = +25°C TA = +70°C TA = +25°C TA = +70°C ID Value 30 ±25 7.5 6.0 ID 9.8 7.7 A ID 6.4 5.0 A 8.4 6.6 2 42 17 14 ID Maximum Continuous Body Diode Forward Current (Note 7) Pulsed Drain Current (10µs pulse, duty cycle = 1%) Avalanche Current (Notes 8 & 9) L = 0.1mH Repetitive Avalanche Energy (Notes 8 & 9) L = 0.1mH IS IDM IAR EAR Units V V A A A A A mJ Thermal Characteristics Characteristic Symbol PD Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Steady State t<10s RθJA Total Power Dissipation (Note 7) Thermal Resistance, Junction to Ambient (Note 7) Value 1.17 107 61 1.5 83 49 14.5 -55 to 150 PD Steady State t<10s Thermal Resistance, Junction to Case Operating and Storage Temperature Range RθJA RθJC TJ, TSTG Units W °C/W W °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 10) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 10) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 11) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: Symbol Min Typ Max Unit BVDSS IDSS IGSS 30 — — — — — — 1.0 ±100 V μA nA VGS = 0V, ID = 250μA VDS = 30V, VGS = 0V VGS = ±20V, VDS = 0V VGS(th) 0.8 — 1.6 V RDS(on) — 12 16 16 22 mΩ |Yfs| VSD — — 8 0.72 — 0.94 S V VDS = VGS, ID = 250μA VGS = 10V, ID = 9A VGS = 4.5V, ID = 7A VDS = 10V, ID = 9A VGS = 0V, IS = 1A Ciss Coss Crss Rg Qg Qgs Qgd — — — — — — — — — — — 798 128 122 1.37 8.56 1.8 2.5 5.03 4.50 26.33 8.55 — — — — — — — — — — — pF pF pF Ω nC nC nC ns ns ns ns tD(on) tr tD(off) tf Test Condition VDS = 10V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VGS = 5V, VDS = 15V, ID = 9A VDD = 15V, VGEN = 10V, RL = 15Ω, RG = 6Ω, ID = 1A 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 8. IAR and EAR rating are based on low frequency and duty cycles to keep TJ = +25°C. 9. Applicable to products manufactured with Data Code “1146” (Nov, 2011) and newer. 10. Short duration pulse test used to minimize self-heating effect. 11. Guaranteed by design. Not subject to product testing. DMG4800LSD Document number: DS31858 Rev. 7 - 2 2 of 6 www.diodes.com July 2014 © Diodes Incorporated DMG4800LSD 30 30 VGS = 10V 25 25 20 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS = 4.5V VGS = 3.0V 15 10 VGS = 2.5V 0 15 10 5 VGS = 2.0V 0 0.5 1 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristic 2 1 0.1 VGS = 2.5V 0.01 VGS = 4.5V 0 5 10 15 20 25 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 30 RDSON, DRAIN-SOURCE ON-RESISTANCE () 1.4 1.2 VGS = 4.5V ID = 10A 0.8 VGS = 10V ID = 11.6A 0.6 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 5 On-Resistance Variation with Temperature DMG4800LSD Document number: DS31858 Rev. 7 - 2 TA = 125°C TA = 85°C T A = 25°C TA = -55°C 0 0.5 1 1.5 2 2.5 3 3.5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristic 4 0.06 VGS = 4.5V 0.05 0.04 0.03 TA = 150°C TA = 125°C 0.02 T A = 85°C T A = 25°C 0.01 0 T A = -55°C 0 5 10 15 20 ID, DRAIN CURRENT (A) 25 30 Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 1.6 1.0 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 20 TA = 150°C 5 RDSON , DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) VDS = 5V 0.05 0.04 0.03 VGS = 4.5V ID = 10A 0.02 0.01 VGS = 10V ID = 11.6A 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 6 On-Resistance Variation with Temperature 3 of 6 www.diodes.com July 2014 © Diodes Incorporated DMG4800LSD 20 TA = 25°C 1.6 1.2 IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) 2.0 ID = 1mA ID = 250µA 0.8 0.4 10,000 8 4 0 0.2 0.4 0.6 0.8 1 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.2 10 VGS, GATE-SOURCE VOLTAGE (V) C, CAPACITANCE (pF) 12 0 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature 1,000 Ciss Coss 100 10 16 Crss 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Total Capacitance 30 8 6 ID = 9A 4 2 0 0 2 4 6 8 10 12 14 16 18 QG, TOTAL GATE CHARGE (nC) Fig. 10 Total Gate Charge IDSS, LEAKAGE CURRENT (nA) 100,000 10,000 TA = 150°C 1,000 TA = 125°C 100 TA = 85°C 10 TA = -55°C T A = 25°C 1 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) 30 Fig. 11 Typical Leakage Current vs. Drain-Source Voltage DMG4800LSD Document number: DS31858 Rev. 7 - 2 4 of 6 www.diodes.com July 2014 © Diodes Incorporated DMG4800LSD r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 RJA(t) = r(t) * RJA R JA = 106°C/W D = 0.02 0.01 P(pk) D = 0.01 t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t 1/t2 D = 0.005 D = Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) Fig. 12 Transient Thermal Response 10 100 1,000 Package Outline Dimensions 0.254 Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. E1 E A1 L Gauge Plane Seating Plane Detail ‘A’ h 7°~9° 45° Detail ‘A’ A2 A A3 b e D SO-8 Dim Min Max A 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25 b 0.3 0.5 D 4.85 4.95 E 5.90 6.10 E1 3.85 3.95 e 1.27 Typ h 0.35 L 0.62 0.82 0 8 All Dimensions in mm Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. X C1 C2 Dimensions X Y C1 C2 Value (in mm) 0.60 1.55 5.4 1.27 Y DMG4800LSD Document number: DS31858 Rev. 7 - 2 5 of 6 www.diodes.com July 2014 © Diodes Incorporated DMG4800LSD IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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