NTMFS4120N Power MOSFET 30 V, 31 A, Single N-Channel, SO-8 Flat Lead Features •Low RDS(on) •Optimized Gate Charge •Low Inductance SO-8 Package •These are Pb-Free Devices http://onsemi.com V(BR)DSS Applications •Notebooks, Graphics Cards •DC-DC Converters •Synchronous Rectification ID Max (Note 1) RDS(on) Typ 3.5 mW @ 10 V 30 V 31 A 4.2 mW @ 4.5 V D MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGS $20 V ID 18 A Continuous Drain Current (Note 1 ) Power Dissipation (Note 1) Steady State TA = 25°C t v10 s TA = 25°C Steady State TA = 85°C Steady State Power Dissipation (Note 2) Pulsed Drain Current S 13 31 PD 2.2 W 6.9 TA = 25°C ID TA = 85°C 11 D 1 PD 0.9 W IDM 94 A TJ, Tstg -55 to 150 °C IS 7.0 A EAS 450 mJ TL 260 °C tp = 10 ms Source Current (Body Diode) Single Pulse Drain-to-Source Avalanche Energy (VDD = 30 V, VGS = 10 V, IPK = 30 A, L = 1 mH, RG = 25 W) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) Symbol 4120N A Y WW G D D = Specific Device Code = Assembly Location = Year = Work Week = Pb-Free Package (Note: Microdot may be in either location) Value Unit Device Package Shipping† °C/W NTMFS4120NT1G SO-8 FL (Pb-Free) 1500 Tape & Reel NTMFS4120NT3G SO-8 FL (Pb-Free) 5000 Tape & Reel Junction-to-Case - Steady State RqJC 1.7 Junction-to-Ambient - Steady State (Note 1) RqJA 55.8 Junction-to-Ambient - t v10 s (Note 1) RqJA 18 Junction-to-Ambient - Steady State (Note 2) RqJA 139.1 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). 2. Surface mounted on FR4 board using the minimum recommended pad size (Cu area = 1.0 in sq). © Semiconductor Components Industries, LLC, 2007 SO-8 FLAT LEAD CASE 488AA STYLE 1 D 4120N AYWWG G ORDERING INFORMATION THERMAL RESISTANCE MAXIMUM RATINGS Parameter S S S G A 8.0 TA = 25°C Operating Junction and Storage Temperature July, 2007 - Rev. 3 MARKING DIAGRAM TA = 25°C t v10 s Continuous Drain Current (Note 2) G 1 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: NTMFS4120N/D NTMFS4120N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Test Condition Min Drain-to-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 30 Drain-to-Source Breakdown Voltage T emperature Coefficient V(BR)DSS/TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current V 21 VGS = 0 V, VDS = 24 V TJ = 25°C 1.0 TJ = 125°C IGSS VDS = 0 V, VGS = 20 V VGS(TH) VGS = VDS, ID = 250 mA mV/°C mA 10 100 nA ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient VGS(TH)/TJ Drain-to-Source On Resistance Forward Transconductance RDS(on) gFS 1.0 2.5 7.4 V mV/°C VGS = 10 V, ID = 26 A 3.5 4.5 VGS = 4.5 V, ID = 24 A 4.2 5.5 VDS = 15 V, ID = 26 A 35 S 3600 pF mW CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS VGS = 0 V, f = 1.0 MHz, VDS = 24 V 640 380 QG(TOT) 33 Threshold Gate Charge QG(TH) 4.4 Gate-to-Source Charge QGS Gate-to-Drain Charge QGD 14 RG 1.0 W td(ON) 24 ns Gate Resistance VGS = 4.5 V, VDS = 15 V, ID = 24 A 50 nC Total Gate Charge 13 SWITCHING CHARACTERISTICS (Note 4) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time tr td(OFF) VGS = 4.5 V, VDS = 15 V, ID = 1.0 A, RG = 3.0 W tf 32 27 31 DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD TJ = 25°C 0.74 TJ = 125°C 0.6 tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 6.0 A 36 VGS = 0 V, dIS/dt = 100 A/ms, IS = 6.0 A QRR http://onsemi.com 2 V ns 18 18 34 3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures. 1.0 nC NTMFS4120N TYPICAL PERFORMANCE CURVES 80 70 3.6 V ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) 80 TJ = 25°C VGS = 3.8 V to 10 V 60 50 3.4 V 40 30 3.2 V 20 3.0 V 10 2.8 V 0 VDS ≥ 10 V 70 60 50 40 30 TJ = -55°C 20 TJ = 25°C 10 TJ = 125°C 0 2 4 6 8 10 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 3 2 4 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 1 RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0 0.008 VGS = 10 V 0.007 TJ = 125°C 0.006 0.005 TJ = 25°C 0.004 0.003 TJ = -55°C 0.002 0.001 10 20 30 40 50 60 70 80 0.007 TJ = 25°C 0.006 VGS = 4.5 V 0.005 0.004 VGS = 10 V 0.003 0.002 10 30 40 50 60 70 80 Figure 4. On-Resistance vs. Drain Current and Gate Voltage Figure 3. On-Resistance vs. Drain Current and Temperature 1.6 10000 VGS = 0 V ID = 26 A VGS = 10 V 1.4 IDSS, LEAKAGE (nA) RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 20 ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) 1.2 1 0.8 0.6 -50 5 TJ = 150°C 1000 TJ = 125°C 100 -25 0 25 50 75 100 125 150 5 10 15 20 25 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current vs. Voltage http://onsemi.com 3 30 NTMFS4120N 6000 TJ = 25°C C, CAPACITANCE (pF) 5000 Ciss 4000 3000 2000 Coss 1000 Crss VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) TYPICAL PERFORMANCE CURVES 5 QT 4 QGS 2 VDD = 15 V VGS = 4.5 V ID = 24 A TJ = 25°C 1 5 Figure 7. Capacitance Variation IS, SOURCE CURRENT (AMPS) t, TIME (ns) 30 35 45 VDD = 15 V ID = 1 A VGS = 4.5 V tr 100 tf td(off) 1 td(on) 10 RG, GATE RESISTANCE (OHMS) 40 30 25 20 15 10 5 0 0.5 100 10 ms 100 ms 1 ms 10 ms 0.1 RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.01 0.1 1 dc 10 100 EAS, SINGLE PULSE DRAIN-TO-SOURCE AVALANCHE ENERGY (mJ) 100 VGS = 20 V SINGLE PULSE TC = 25°C 0.7 0.9 0.6 0.8 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) 1.0 Figure 10. Diode Forward Voltage vs. Current 1000 10 VGS = 0 V TJ = 25°C 35 Figure 9. Resistive Switching Time Variation vs. Gate Resistance ID, DRAIN CURRENT (AMPS) 20 25 10 15 QG, TOTAL GATE CHARGE (nC) Figure 8. Gate-To-Source and Drain-To-Source Voltage vs. Total Charge 1000 1 VGS 3 0 0 0 5 10 15 20 25 0 GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS) 10 QGD 500 450 ID = 30 A 400 350 300 250 200 150 100 50 0 25 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 11. Maximum Rated Forward Biased Safe Operating Area 50 75 100 125 TJ, JUNCTION TEMPERATURE (°C) Figure 12. Maximum Avalanche Energy vs Starting Junction Temperature http://onsemi.com 4 150 NTMFS4120N 1 Rthja(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.001 1E-04 SINGLE PULSE 1E-03 1E-02 1E-01 t, TIME (seconds) 1E+00 Figure 13. Thermal Response http://onsemi.com 5 1E+01 1E+02 1E+03 NTMFS4120N PACKAGE DIMENSIONS DFN6 5x6, 1.27P (SO8 FL) CASE 488AA-01 ISSUE C 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D A 2 B D1 6 2X 0.20 C 5 4X E1 q E 2 c 1 2 3 A1 4 TOP VIEW 0.10 C 3X C e SEATING PLANE DETAIL A A DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q MILLIMETERS MIN NOM MAX 0.90 1.00 1.10 0.00 --0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.15 BSC 4.50 4.90 5.10 3.50 --4.22 6.15 BSC 5.50 5.80 6.10 3.45 --4.30 1.27 BSC 0.51 0.61 0.71 0.51 ----0.51 0.61 0.71 0.05 0.17 0.20 3.00 3.40 3.80 0_ --12 _ 0.10 C SOLDERING FOOTPRINT* SIDE VIEW 8X DETAIL A b 0.10 C A B 0.05 c 3X 4X 1.270 0.750 4X STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 6. DRAIN e/2 L 1 4 K 1.000 0.965 1.330 2X 0.905 2X 0.495 E2 L1 6 G M 4.530 3.200 0.475 5 D2 2X 1.530 BOTTOM VIEW 4.560 *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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