LESHAN RADIO COMPANY, LTD. Schottky barrier diode LRB751G-40T1G zApplications General rectification LRB751G-40T1G S-LRB751G-40T1G zFeatures 1) Small power mold type. (SO D-723) 2) Low VF 3) High reliability 1 2 4) Pb-Free package is available SOD-723 5) S- Prefix for Automotive and O ther Applications Req uiring Uniq ue Site and Control Change Req uirements; AE C -Q 101 Q ualified and PPAP Capable. zConstruction Silicon epitaxial planar zAbsolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current Forward current surge peak （60Hz・1cyc） Junction temperature Storage temperature Limits 40 30 30 200 125 -40 to +125 Symbol VRM VR Io IFSM Tj Tstg Unit V V mA mA ℃ ℃ zElectrical characteristic (Ta=25°C) Parameter Forward voltage Reverse current Capacitance between terminals Symbol VF IR Min. - Typ. - Max. 0.37 0.5 Unit V µA Ct - 2 - pF Conditions IF=1mA VR=30V VR=1V , f=1MHz z DEVICE MARKING AND ORDERING INFORMATION Device LRB751G-40T1G S-LRB751G-40T1G Marking 5 Shipping 4000/Tape&Reel Rev.O 1/4 LESHAN RADIO COMPANY, LTD. LRB751G-40T1G , S-LRB751G-40T1G Electricalcharacteristiccurves(Ta=25OC) 100 Ta=125℃ 100000 10 Ta=125℃ Ta=25℃ 1 Ta=-25℃ 0.1 0.01 0.001 10000 1000 Ta=25℃ 100 Ta=-25℃ 10 100 200 300 400 500 600 700 800 5 10 15 20 25 30 35 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 0 40 310 300 290 AVE:304.2mV 800 700 600 500 400 300 200 AVE:111.0nA 8.3ms AVE:3.40A 5 0 4 3 Ct DISPERSION MAP 10 Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 25 20 15 10 5 AVE:11.7ns Ifsm 8 8.3ms 8.3ms 1cyc 6 4 2 0 0 1 IFSM DISRESION MAP AVE:1.81pF 2 0 PEAK SURGE FORWARD CURRENT:IFSM(A) 15 RESERVE RECOVERY TIME:trr(ns) 1cyc 10 5 1 30 Ifsm 30 6 IR DISPERSION MAP 20 25 Ta=25℃ f=1MHz VR=0V n=10pcs 7 0 VF DISPERSION MAP 20 8 100 280 15 9 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 320 10 10 Ta=25℃ VR=30V n=30pcs 900 REVERSE CURRENT:IR(nA) Ta=25℃ IF=1mA n=30pcs 5 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 1000 330 1 0.1 0 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS FORWARD VOLTAGE:VF(mV) Ta=75℃ 1 0 PEAK SURGE FORWARD CURRENT:IFSM(A) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 0REVERSE CURRENT:IR(nA) FORWARD CURRENT:IF(mA) f=1MHz Ta=75℃ 10 trr DISPERSION MAP 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS Rev.O 2/4 100 LESHAN RADIO COMPANY, LTD. LRB751G-40T1G , S-LRB751G-40T1G Electricalcharacteristiccurves(Ta=25OC) 1000 Ifsm t TRANSIENT 8 THAERMAL IMPEDANCE:Rth (℃/W) PEAK SURGE FORWARD CURRENT:IFSM(A) 10 6 4 2 1 10 100 TIME:t(ms) IFSM-t CHARACTERISTICS Rth(j-c) 100 Mounted on epoxy board IM=1mA IF=10mA 1ms time 300us 10 0.001 0 0.1 Rth(j-a) 0.1 10 TIME:t(s) Rth-t CHARACTERISTICS 1000 0.003 0.05 DC D=1/2 0.03 REVERSE POWER DISSIPATION:PR (W) FORWARD POWER DISSIPATION:Pf(W) 0.04 Sin(θ＝180) 0.02 0.002 D=1/2 DC Sin(θ＝180) 0.001 0.01 0 0 0 0.01 0.02 0.03 0.04 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 0 0.05 20 30 40 0.1 0.1 0A 0V 0.08 0.06 DC 0.04 Io t T VR D=t/T VR=20V Tj=125℃ D=1/2 0.02 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 10 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 0A 0V 0.08 0.06 Io t T DC 0.04 VR D=t/T VR=20V Tj=125℃ D=1/2 0.02 Sin(θ＝180) Sin(θ＝180) 0 0 0 25 50 75 100 125 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 0 25 50 75 100 125 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) Rev.O 3/4 LESHAN RADIO COMPANY, LTD. LRB751G-40T1G , S-LRB751G-40T1G SOD−723 D −X− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. −Y− E b 2X 0.08 (0.0032) X Y DIM A b c D E HE L A c L MILLIMETERS INCHES MIN NOM MAX MIN NOM MAX 0.49 0.52 0.55 0.019 0.020 0.022 0.25 0.28 0.32 0.0098 0.011 0.013 0.08 0.12 0.15 0.0032 0.0047 0.0059 0.95 1.00 1.05 0.037 0.039 0.041 0.55 0.60 0.65 0.022 0.024 0.026 1.35 1.40 1.45 0.053 0.055 0.057 0.15 0.20 0.25 0.006 0.0079 0.010 HE SOLDERING FOOTPRINT* 1.1 0.043 0.45 0.0177 0.50 0.0197 SCALE 10:1 mm Ǔ ǒinches Rev.O 4/4