ON NCP716 80 ma ultra-low iq, wide input voltage low dropout regulator Datasheet

NCP716
80 mA Ultra-Low Iq, Wide
Input Voltage Low Dropout
Regulator
The NCP716 is 80 mA LDO Linear Voltage Regulator. It is a very
stable and accurate device with ultra−low ground current consumption
(4.7 mA over the full output load range) and a wide input voltage range
(up to 24 V). The regulator incorporates several protection features
such as Thermal Shutdown and Current Limiting.
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MARKING
DIAGRAMS
Features
• Operating Input Voltage Range: 2.5 V to 24 V
• Fixed Voltage Options Available:
•
•
•
•
•
•
•
1
WDFN6
CASE 511BR
1.2 V to 5.0 V
Ultra Low Quiescent Current: Max. 4.7 mA over Temperature
±2% Accuracy over Full Load, Line and Temperature Variations
PSRR: 60 dB at 100 kHz
Noise: 200 mVRMS from 200 Hz to 100 kHz
Thermal Shutdown and Current Limit Protection
Available in WDFN6, 2x2x0.8 mm Package
This is a Pb−Free Device
XX M
XX = Specific Device Code
M = Date Code
PIN CONNECTIONS
1
2
3
6
EXP
5
4
Typical Applicaitons
• Portable Equipment
• Communication Systems
2.5 V < Vin < 24 V
WDFN6 2x2 mm
(Top View)
1 Vin
Vout 6
1.2 V < Vout < 5 V / 80 mA
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 17 of this data sheet.
NCP716MT
NCP716MTG*
Cin
Cout
1 mF
NC/GND*
GND
2
1 mF
3
Figure 1. Typical Application Schematic
© Semiconductor Components Industries, LLC, 2016
June, 2016 − Rev. 4
1
Publication Order Number:
NCP716/D
NCP716
IN
UVLO
BANDGAP
REFERENCE
THERMAL
SHUTDOWN
MOSFET
DRIVER WITH
CURRENT LIMIT
OUT
EEPROM
GND
Figure 2. Simplified Block Diagram
Table 1. PIN FUNCTION DESCRIPTION
Pin No.
wDFN6, 2 x 2
Pin
Name
6
OUT
2
Description
Regulated output voltage pin. A small 0.47 mF ceramic capacitor is needed from this pin to ground to
assure stability.
NC/GND* No connection at NCP716MT devices. This pin can be tied to ground to improve thermal dissipation or
left disconnected. *Power supply ground at NCP716MTG devices.
3, EXP
GND
Power supply ground. Exposed pad EXP must be tied with GND pin 3.
4
N/C
No connection. This pin can be tied to ground to improve thermal dissipation or left disconnected.
5
N/C
No connection. This pin can be tied to ground to improve thermal dissipation or left disconnected.
1
IN
Input pin. A small capacitor is needed from this pin to ground to assure stability.
Table 2. ABSOLUTE MAXIMUM RATINGS
Rating
Input Voltage (Note 1)
Output Voltage
Output Short Circuit Duration
Symbol
Value
Unit
VIN
−0.3 to 24
V
VOUT
−0.3 to 6
V
tSC
Indefinite
s
TJ(MAX)
150
°C
TA
−40 to 125
°C
TSTG
−55 to 150
°C
ESD Capability, Human Body Model (Note 2)
ESDHBM
2000
V
ESD Capability, Machine Model (Note 2)
ESDMM
200
V
Maximum Junction Temperature
Operating Ambient Temperature Range
Storage Temperature Range
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area.
2. This device series incorporates ESD protection and is tested by the following methods:
ESD Human Body Model tested per EIA/JESD22−A114
ESD Machine Model tested per EIA/JESD22−A115
ESD Charged Device Model tested per EIA/JESD22−C101E
Latch up Current Maximum Rating tested per JEDEC standard: JESD78.
Table 3. THERMAL CHARACTERISTICS
Rating
Thermal Characteristics, WDFN6, 2 mm x 2 mm
Thermal Resistance, Junction−to−Air
Symbol
Value
Unit
RqJA
120
°C/W
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2
NCP716
Table 4. ELECTRICAL CHARACTERISTICS Voltage version 1.2 V
−40°C ≤ TJ ≤ 125°C; VIN = 3.0 V; IOUT = 1 mA, CIN = COUT = 1.0 mF, unless otherwise noted. Typical values are at TJ = +25°C. (Note 5)
Parameter
Operating Input Voltage
Test Conditions
Symbol
Min
Max
Unit
IOUT ≤ 10 mA
VIN
2.5
24
V
3.0
24
10 mA < IOUT < 80 mA
Output Voltage Accuracy
Turn−On Time
Undervoltage Lock−Out
Typ
3.0 V < VIN < 24 V, 0 < IOUT < 80 mA
VOUT
1.164
1.2
1.236
V
IOUT = 1 mA
tON
−
700
−
ms
VIN rising
UVLO
−
2.1
−
V
Line Regulation
3.0 V ≤ VIN ≤ 24 V, IOUT = 1 mA
RegLINE
30
mV
Load Regulation
IOUT = 0 mA to 80 mA
RegLOAD
20
mV
Dropout voltage (Note 3)
Maximum Output Current
Ground current
VDO
(Note 6)
IOUT
0 < IOUT < 80 mA, −40 < TA < 85°C
IGND
−
110
mA
3.2
0 < IOUT < 80 mA, VIN = 24 V
Power Supply Rejection Ratio
Output Noise Voltage
Thermal Shutdown Temperature (Note 4)
Thermal Shutdown Hysteresis (Note 4)
VIN = 3.0 V, VOUT = 1.2 V
VPP = 200 mV modulation
IOUT = 1 mA, COUT = 10 mF
f = 100 kHz
mV
4.2
mA
5.8
mA
PSRR
63
dB
VOUT = 1.2 V, IOUT = 80 mA
f = 200 Hz to 100 kHz
VN
105
mVrms
Temperature increasing from TJ = +25°C
TSD
155
°C
Temperature falling from TSD
TSDH
−
25
−
°C
3. Not Characterized at VIN = 3.0 V, VOUT = 1.2 V, IOUT = 80 mA
4. Guaranteed by design and characterization.
5. Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at TJ = TA =
25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.
6. Respect SOA
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3
NCP716
Table 5. ELECTRICAL CHARACTERISTICS Voltage version 1.5 V
−40°C ≤ TJ ≤ 125°C; VIN = 3.0 V; IOUT = 1 mA, CIN = COUT = 1.0 mF, unless otherwise noted. Typical values are at TJ = +25°C. (Note 9)
Parameter
Operating Input Voltage
Test Conditions
Symbol
Min
Max
Unit
IOUT ≤ 10 mA
VIN
2.5
24
V
3.0
24
10 mA < IOUT < 80 mA
Output Voltage Accuracy
Turn−On Time
Undervoltage Lock−Out
Typ
3.0 V < VIN < 24 V, 0 < IOUT < 80 mA
VOUT
1.455
1.5
1.545
V
IOUT = 1 mA
tON
−
700
−
ms
VIN rising
UVLO
−
2.1
−
V
Line Regulation
3.0 V ≤ VIN ≤ 24 V, IOUT = 1 mA
RegLINE
20
mV
Load Regulation
IOUT = 0 mA to 80 mA
RegLOAD
20
mV
(Note 10)
IOUT
0 < IOUT < 80 mA, −40 < TA < 85°C
IGND
Dropout voltage (Note 7)
Maximum Output Current
Ground current
110
mA
3.2
0 < IOUT < 80 mA, VIN = 24 V
Power Supply Rejection Ratio
Output Noise Voltage
Thermal Shutdown Temperature (Note 8)
Thermal Shutdown Hysteresis (Note 8)
VIN = 3.0 V, VOUT = 1.5 V
VPP = 200 mV modulation
IOUT = 1 mA, COUT = 10 mF
f = 100 kHz
4.2
mA
5.8
mA
PSRR
60
dB
VOUT = 1.5 V, IOUT = 80 mA
f = 200 Hz to 100 kHz
VN
120
mVrms
Temperature increasing from TJ = +25°C
TSD
155
°C
Temperature falling from TSD
TSDH
−
25
−
°C
7. Not Characterized at VIN = 3.0 V, VOUT = 1.5 V, IOUT = 80 mA
8. Guaranteed by design and characterization.
9. Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at TJ = TA =
25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.
10. Respect SOA
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4
NCP716
Table 6. ELECTRICAL CHARACTERISTICS Voltage version 1.8 V
−40°C ≤ TJ ≤ 125°C; VIN = 3.0 V; IOUT = 1 mA, CIN = COUT = 1.0 mF, unless otherwise noted. Typical values are at TJ = +25°C. (Note 13)
Parameter
Operating Input Voltage
Test Conditions
Symbol
Min
Max
Unit
IOUT ≤ 10 mA
VIN
2.8
24
V
3.0
24
10 mA < IOUT < 80 mA
Output Voltage Accuracy
Turn−On Time
Undervoltage Lock−Out
Typ
3.0 V < VIN < 24 V, 0 < IOUT < 80 mA
VOUT
1.746
1.8
1.854
V
IOUT = 1 mA
tON
−
700
−
ms
VIN rising
UVLO
−
2.1
−
V
Line Regulation
3.0 V ≤ VIN ≤ 24 V, IOUT = 1 mA
RegLINE
15
mV
Load Regulation
IOUT = 0 mA to 80 mA
RegLOAD
15
mV
(Note 14)
IOUT
0 < IOUT < 80 mA, −40 < TA < 85°C
IGND
Dropout voltage (Note 11)
Maximum Output Current
Ground current
110
mA
3.2
0 < IOUT < 80 mA, VIN = 24 V
Power Supply Rejection Ratio
Output Noise Voltage
Thermal Shutdown Temperature (Note 12)
Thermal Shutdown Hysteresis (Note 12)
VIN = 3.0 V, VOUT = 1.8 V
VPP = 200 mV modulation
IOUT = 1 mA, COUT = 10 mF
f = 100 kHz
4.2
mA
5.8
mA
PSRR
60
dB
VOUT = 1.8 V, IOUT = 80 mA
f = 200 Hz to 100 kHz
VN
140
mVrms
Temperature increasing from TJ = +25°C
TSD
155
°C
Temperature falling from TSD
TSDH
−
25
−
°C
11. Not Characterized at VIN = 3.0 V, VOUT = 1.8 V, IOUT = 80 mA
12. Guaranteed by design and characterization.
13. Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at TJ = TA =
25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.
14. Respect SOA
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NCP716
Table 7. ELECTRICAL CHARACTERISTICS Voltage version 2.5 V
−40°C ≤ TJ ≤ 125°C; VIN = 3.5 V; IOUT = 1 mA, CIN = COUT = 1.0 mF, unless otherwise noted. Typical values are at TJ = +25°C. (Note 17)
Parameter
Operating Input Voltage
Output Voltage Accuracy
Turn−On Time
Undervoltage Lock−Out
Line Regulation
Load Regulation
Dropout voltage (Note 15)
Maximum Output Current
Ground current
Test Conditions
Symbol
Min
0 < IOUT < 80 mA
VIN
3.5
3.5 V < VIN < 24 V, 0 < IOUT < 80 mA
VOUT
2.45
IOUT = 1 mA
tON
VIN rising
UVLO
VOUT + 1 V ≤ VIN ≤ 24 V, IOUT = 1mA
RegLINE
15
15
IOUT = 0 mA to 80 mA
RegLOAD
VDO = VIN – (VOUT(NOM) – 75 mV)
IOUT = 80 mA
VDO
(Note 18)
IOUT
0 < IOUT < 80 mA, −40 < TA < 85°C
IGND
Typ
Max
Unit
24
V
2.5
2.55
V
−
700
−
ms
−
2.1
−
V
Output Noise Voltage
Thermal Shutdown Temperature (Note 16)
Thermal Shutdown Hysteresis (Note 16)
VIN = 3.5 V, VOUT = 2.5 V
VPP = 200 mV modulation
IOUT = 1 mA, COUT = 10 mF
f = 100 kHz
mV
640
mV
400
110
mA
3.2
0 < IOUT < 80 mA, VIN = 24 V
Power Supply Rejection Ratio
mV
4.2
mA
5.8
mA
PSRR
60
dB
VOUT = 2.5 V, IOUT = 80 mA
f = 200 Hz to 100 kHz
VN
160
mVrms
Temperature increasing from TJ = +25°C
TSD
155
°C
Temperature falling from TSD
TSDH
−
25
−
°C
15. Characterized when VOUT falls 75 mV below the regulated voltage and only for devices with VOUT = 2.5 V
16. Guaranteed by design and characterization.
17. Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at TJ = TA =
25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.
18. Respect SOA
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NCP716
Table 8. ELECTRICAL CHARACTERISTICS Voltage version 3.0 V
−40°C ≤ TJ ≤ 125°C; VIN = 4.0 V; IOUT = 1 mA, CIN = COUT = 1.0 mF, unless otherwise noted. Typical values are at TJ = +25°C. (Note 21)
Parameter
Test Conditions
Symbol
Min
Operating Input Voltage
0 < IOUT < 80 mA
VIN
4.0
Output Voltage Accuracy
4.3 V < VIN < 24 V, 0 < IOUT < 80 mA
VOUT
2.94
IOUT = 1 mA
tON
VIN rising
UVLO
VOUT + 1 V ≤ VIN ≤ 24 V, IOUT = 1 mA
Turn−On Time
Undervoltage Lock−Out
Line Regulation
Load Regulation
Dropout voltage (Note 19)
Maximum Output Current
Ground current
Max
Unit
24
V
3.0
3.06
V
−
700
−
ms
−
2.1
−
V
RegLINE
4
10
mV
10
30
mV
580
mV
IOUT = 0 mA to 80 mA
RegLOAD
VDO = VIN – (VOUT(NOM) – 90 mV)
IOUT = 80 mA
VDO
(Note 22)
IOUT
0 < IOUT < 80 mA, −40 < TA < 85°C
IGND
Typ
370
110
mA
3.2
0 < IOUT < 80 mA, VIN = 24 V
Power Supply Rejection Ratio
Output Noise Voltage
Thermal Shutdown Temperature (Note 20)
Thermal Shutdown Hysteresis (Note 20)
VIN = 4.3 V, VOUT = 3.3 V
VPP = 200 mV modulation
IOUT = 1 mA, COUT = 10 mF
f = 100 kHz
4.2
mA
5.8
mA
PSRR
58
dB
VOUT = 4.3 V, IOUT = 80 mA
f = 200 Hz to 100 kHz
VN
190
mVrms
Temperature increasing from TJ = +25°C
TSD
155
°C
Temperature falling from TSD
TSDH
−
25
−
°C
19. Characterized when VOUT falls 90 mV below the regulated voltage and only for devices with VOUT = 3.0 V
20. Guaranteed by design and characterization.
21. Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at TJ = TA =
25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.
22. Respect SOA
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NCP716
Table 9. ELECTRICAL CHARACTERISTICS Voltage version 3.3 V
−40°C ≤ TJ ≤ 125°C; VIN = 4.3 V; IOUT = 1 mA, CIN = COUT = 1.0 mF, unless otherwise noted. Typical values are at TJ = +25°C. (Note 25)
Parameter
Test Conditions
Symbol
Min
Operating Input Voltage
0 < IOUT < 80 mA
VIN
4.3
Output Voltage Accuracy
4.3 V < VIN < 24 V, 0 < IOUT < 80 mA
VOUT
3.234
IOUT = 1 mA
tON
VIN rising
UVLO
VOUT + 1 V ≤ VIN ≤ 24 V, IOUT = 1 mA
Turn−On Time
Undervoltage Lock−Out
Line Regulation
Load Regulation
Dropout voltage (Note 23)
Maximum Output Current
Ground current
Max
Unit
24
V
3.3
3.366
V
−
700
−
ms
−
2.1
−
V
RegLINE
4
10
mV
10
30
mV
560
mV
IOUT = 0 mA to 80 mA
RegLOAD
VDO = VIN – (VOUT(NOM) – 99 mV)
IOUT = 80 mA
VDO
(Note 26)
IOUT
0 < IOUT < 80 mA, −40 < TA < 85°C
IGND
Typ
350
110
mA
3.2
0 < IOUT < 80 mA, VIN = 24 V
Power Supply Rejection Ratio
Output Noise Voltage
Thermal Shutdown Temperature (Note 24)
Thermal Shutdown Hysteresis (Note 24)
VIN = 4.3 V, VOUT = 3.3 V
VPP = 200 mV modulation
IOUT = 1 mA, COUT = 10 mF
f = 100 kHz
4.2
mA
5.8
mA
PSRR
60
dB
VOUT = 4.3 V, IOUT = 80 mA
f = 200 Hz to 100 kHz
VN
200
mVrms
Temperature increasing from TJ = +25°C
TSD
155
°C
Temperature falling from TSD
TSDH
−
25
−
°C
23. Characterized when VOUT falls 99 mV below the regulated voltage and only for devices with VOUT = 3.3 V
24. Guaranteed by design and characterization.
25. Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at TJ = TA =
25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.
26. Respect SOA
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NCP716
Table 10. ELECTRICAL CHARACTERISTICS Voltage version 5.0 V
−40°C ≤ TJ ≤ 125°C; VIN = 6.0 V; IOUT = 1 mA, CIN = COUT = 1.0 mF, unless otherwise noted. Typical values are at TJ = +25°C. (Note 29)
Parameter
Test Conditions
Symbol
Min
Operating Input Voltage
0 < IOUT < 80 mA
VIN
6.0
Output Voltage Accuracy
6.0 V < VIN < 24 V, 0 < IOUT < 80 mA
VOUT
4.9
IOUT = 1 mA
tON
VIN rising
UVLO
VOUT + 1 V ≤ VIN ≤ 24 V, IOUT = 1 mA
Turn−On Time
Undervoltage Lock−Out
Line Regulation
Load Regulation
Dropout voltage (Note 27)
Maximum Output Current
Ground current
Max
Unit
24
V
5.0
5.1
V
−
700
−
ms
−
2.1
−
V
RegLINE
4
10
mV
10
30
mV
500
mV
IOUT = 0 mA to 80 mA
RegLOAD
VDO = VIN – (VOUT(NOM) – 150 mV)
IOUT = 80 mA
VDO
(Note 30)
IOUT
0 < IOUT < 80 mA, −40 < TA < 85°C
IGND
Typ
310
110
mA
3.2
0 < IOUT < 80 mA, VIN = 24 V
Power Supply Rejection Ratio
Output Noise Voltage
Thermal Shutdown Temperature (Note 28)
Thermal Shutdown Hysteresis (Note 28)
VIN = 6.0 V, VOUT = 5.0 V
VPP = 200 mV modulation
IOUT = 1 mA, COUT =10 mF
f = 100 kHz
4.2
mA
5.8
mA
PSRR
54
dB
VOUT = 5.0 V, IOUT = 80 mA
f = 200 Hz to 100 kHz
VN
220
mVrms
Temperature increasing from TJ = +25°C
TSD
155
°C
Temperature falling from TSD
TSDH
−
25
−
°C
27. Characterized when VOUT falls 150 mV below the regulated voltage and only for devices with VOUT = 5.0 V
28. Guaranteed by design and characterization.
29. Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at TJ = TA =
25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.
30. Respect SOA
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NCP716
TYPICAL CHARACTERISTICS
1.220
2.514
IOUT = 1 mA
CIN = COUT = 1 mF
2.510
OUTPUT VOLTAGE (V)
OUTPUT VOLTAGE (V)
1.215
1.210
VIN = 2.5 V
1.205
VIN = (5 V − 24 V)
1.200
1.195
2.506
VIN = (5 V − 24 V)
2.502
2.498
2.494
1.190
−40 −20
0
20
40
60
80
2.490
−40 −20
120
100
0
20
40
60
80
100
120
TEMPERATURE (°C)
TEMPERATURE (°C)
Figure 3. NCP716x12xxx Output Voltage vs.
Temperature
Figure 4. NCP716x25xxx Output Voltage vs.
Temperature
3.308
5.005
3.304
4.995
OUTPUT VOLTAGE (V)
OUTPUT VOLTAGE (V)
IOUT = 1 mA
CIN = COUT = 1 mF
VIN = 3.5 V
VIN = (4.3 V − 24 V)
3.300
3.296
3.292
IOUT = 1 mA
CIN = COUT = 1 mF
3.288
3.284
−40 −20
0
20
40
IOUT = 1 mA
CIN = COUT = 1 mF
VIN = (8 V − 24 V)
4.985
VIN = 6.0 V
4.975
4.965
4.955
60
80
100
4.945
−40 −20
120
0
20
40
60
80
100
120
TEMPERATURE (°C)
TEMPERATURE (°C)
Figure 5. NCP716x33xxx Output Voltage vs.
Temperature
Figure 6. NCP716x50xxx Output Voltage vs.
Temperature
1.214
2.52
20 V
20 V
10 V
4.0 V
2.51
VIN = 3.0 V
24 V
15 V
OUTPUT VOLTAGE (V)
OUTPUT VOLTAGE (V)
1.210
5.0 V
1.206
1.202
1.198
TA = 25°C
CIN = COUT = 1 mF
1.194
VIN = 3.5 V
15 V
5.0 V
2.50
2.49
2.48
TA = 25°C
CIN = COUT = 1 mF
2.47
1.190
24 V
10 V
2.46
0
10
20
30
40
50
60
70
80
0
10
20
30
40
50
60
70
OUTPUT CURRENT (mA)
OUTPUT CURRENT (mA)
Figure 7. NCP716x12xxx Output Voltage vs.
Output Current
Figure 8. NCP716x25xxx Output Voltage vs.
Output Current
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10
80
NCP716
3.304
5.000
3.300
4.995
3.296
OUTPUT VOLTAGE (V)
OUTPUT VOLTAGE (V)
TYPICAL CHARACTERISTICS
VIN = 4.3 V
5.0 V
3.292
3.288
10 V
TA = 25°C
CIN = COUT = 1 mF
3.284
15 V
20 V
VIN = 6.0 V
4.985
8.0 V
10 V
4.980
20 V
24 V
15 V
24 V
4.970
0
10
20
30
40
50
60
70
80
0
20
30
40
50
60
Figure 9. NCP7163V3 Output Voltage vs.
Output Current
Figure 10. NCP716x50xxx Output Voltage vs.
Output Current
0.6
DROPOUT VOLTAGE (V)
CIN = COUT = 1 mF
TA = 25°C
0.4
0.3
TA = −40°C
0.2
80
70
OUTPUT CURRENT (mA)
TA = 125°C
0.5
10
OUTPUT CURRENT (mA)
0.6
DROPOUT VOLTAGE (V)
4.990
4.975
3.280
0.1
0
TA = 125°C
CIN = COUT = 1 mF
0.5
0.4
TA = 25°C
0.3
0.2
TA = −40°C
0.1
0
0
10
20
30
40
50
60
70
80
0
10
20
30
40
50
60
80
70
OUTPUT CURRENT (mA)
OUTPUT CURRENT (mA)
Figure 11. NCP716x25xxx Dropout Voltage vs.
Output Current
Figure 12. NCP716x33xxx Dropout Voltage vs.
Output Current
0.6
30
CIN = COUT = 1 mF
0.5
QUIESCENT CURRENT (mA)
DROPOUT VOLTAGE (V)
TA = 25°C
CIN = COUT = 1 mF
TA = 125°C
0.4
TA = 25°C
0.3
0.2
TA = −40°C
0.1
TA = 25°C
CIN = COUT = 1 mF
25
20
15
10
IOUT = 80 mA
5
IOUT = 0
0
0
0
10
20
30
40
50
60
70
80
0
5
10
15
20
25
OUTPUT CURRENT (mA)
INPUT VOLTAGE (V)
Figure 13. NCP716x50xxx Dropout Voltage vs.
Output Current
Figure 14. NCP716x12xxx Ground Current vs.
Input Voltage
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11
NCP716
TYPICAL CHARACTERISTICS
40
TA = 25°C
CIN = COUT = 1 mF
25
QUIESCENT CURRENT (mA)
QUIESCENT CURRENT (mA)
30
20
15
10
IOUT = 80 mA
5
IOUT = 0
0
30
25
20
15
10
IOUT = 80 mA
5
IOUT = 0
0
0
5
10
15
20
25
0
5
10
15
20
25
INPUT VOLTAGE (V)
INPUT VOLTAGE (V)
Figure 15. NCP716x25xxx Ground Current vs.
Input Voltage
Figure 16. NCP716x50xxx Ground Current vs.
Input Voltage
30
5.5
TA = 25°C
CIN = COUT = 1 mF
25
QUIESCENT CURRENT (mA)
QUIESCENT CURRENT (mA)
TA = 25°C
CIN = COUT = 1 mF
35
20
15
10
IOUT = 80 mA
5
5.0
IOUT = 0
CIN = COUT = 1 mF
4.5
VIN = 24 V
4.0
VIN = 10 V
3.5
VIN = 3.0 V
3.0
IOUT = 0
0
0
5
10
15
20
2.5
−40 −20
25
20
40
60
80
100
120
INPUT VOLTAGE (V)
TEMPERATURE (°C)
Figure 17. NCP716x33xxx Ground Current vs.
Input Voltage
Figure 18. NCP716x12xxx Quiescent Current
vs. Temperature
5.5
5.5
IOUT = 0
CIN = COUT = 1 mF
5.0
4.5
QUIESCENT CURRENT (mA)
QUIESCENT CURRENT (mA)
0
VIN = 24 V
4.0
VIN = 10 V
3.5
VIN = 3.5 V
3.0
2.5
−40
−20
0
20
40
60
80
100
5.0
IOUT = 0
CIN = COUT = 1 mF
4.5
VIN = 24 V
4.0
VIN = 10 V
3.5
VIN = 4.3 V
3.0
2.5
−40 −20
120
0
20
40
60
80
100
120
TEMPERATURE (°C)
TEMPERATURE (°C)
Figure 19. NCP716x25xxx Quiescent Current
vs. Temperature
Figure 20. NCP716x33xxx Quiescent Current
vs. Temperature
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12
NCP716
TYPICAL CHARACTERISTICS
100
IOUT = 0
CIN = COUT = 1 mF
5.0
VIN = 24 V
4.5
4.0
VIN = 10 V
3.5
VIN = 6.0 V
IOUT = 10 mA
60
40
IOUT = 80 mA
20
3.0
2.5
−40
0
−20
0
20
40
60
80
100
120
0.1
1
10
100
1000
TEMPERATURE (°C)
FREQUENCY (kHz)
Figure 21. NVP716x50xxx Quiescent Current
vs. Temperature
Figure 22. NCP716x12xxx PSRR vs. Frequency
100
100
VIN = 3.5 V + 200 mVpp modulation
COUT = 10 mF
TA = 25°C
IOUT = 1 mA
60
40
60
IOUT = 1 mA
40
IOUT = 10 mA
IOUT = 80 mA
IOUT = 80 mA
20
VIN = 4.3 V + 200 mVpp modulation
COUT = 10 mF
TA = 25°C
80
PSRR (dB)
80
PSRR (dB)
VIN = 3.0 V + 200 mVpp modulation
COUT = 10 mF
TA = 25°C
IOUT = 1 mA
80
PSRR (dB)
QUIESCENT CURRENT (mA)
5.5
20
IOUT = 10 mA
0
0
0.1
1
10
100
1000
0.1
10
100
1000
FREQUENCY (kHz)
FREQUENCY (kHz)
Figure 23. NCP716x25xxx PSRR vs. Frequency
Figure 24. NCP716x33xxx PSRR vs. Frequency
1.6
100
VIN = 6.0 V + 200 mVpp modulation
COUT = 10 mF
TA = 25°C
1.2
60
IOUT = 1 mA
IOUT = 10 mA
40
1.0
0.8
0.6
0.4
IOUT = 80 mA
20
IOUT = 80 mA
TA = 25°C
VIN = 3.0 V
1.4
mV/sqrt (Hz)
80
PSRR (dB)
1
COUT = 4.7 mF
0.2
0
0.1
1
10
100
1000
0
0.01
COUT = 10 mF
0.1
1
10
100
1000
FREQUENCY (kHz)
FREQUENCY (kHz)
Figure 25. NCP716x50xxx PSRR vs. Frequency
Figure 26. NCP716x12xxx Output Spectral
Noise Density vs. Frequency
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13
NCP716
TYPICAL CHARACTERISTICS
4.0
5.0
4.0
3.5
mV/sqrt (Hz)
mV/sqrt (Hz)
3.0
IOUT = 80 mA
TA = 25°C
VIN = 4.3 V
4.5
IOUT = 80 mA
TA = 25°C
VIN = 3.5 V
3.5
2.5
2.0
1.5
3.0
2.5
2.0
1.5
1.0
COUT = 4.7 mF
0.5
1.0
COUT = 10 mF
0
0.01
0.1
1
10
COUT = 4.7 mF
0.5
0
100
1000
COUT = 10 mF
0.01
0.1
1
10
100
FREQUENCY (kHz)
FREQUENCY (kHz)
Figure 27. NCP716x25xxx Output Spectral
Noise Density vs. Frequency
Figure 28. NCP716x33xxx Output Spectral
Noise Density vs. Frequency
8
IOUT = 80 mA
TA = 25°C
VIN = 6.0 V
7
6
mV/sqrt (Hz)
1000
5
4
3
2
COUT = 4.7 mF
1
COUT = 10 mF
0
0.01
0.1
1
10
100
1000
FREQUENCY (kHz)
Figure 29. NCP716x50xxx Output Spectral
Noise Density vs. Frequency
Figure 30. Load Transient Response
Figure 31. Load Transient Response
Figure 32. Load Transient Response
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14
NCP716
TYPICAL CHARACTERISTICS
Figure 33. Load Transient Response
Figure 34. Line Transient Response
Figure 35. Line Transient Response
Figure 36. Line Transient Response
Figure 37. Line Transient Response
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15
NCP716
TYPICAL CHARACTERISTICS
Figure 38. Input Voltage Turn−On Response
Figure 39. Input Voltage Turn−On Response
Figure 40. Input Voltage Turn−On Response
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16
NCP716
APPLICATIONS INFORMATION
Power Dissipation and Heat sinking
The NCP716 is the member of new family of Wide Input
Voltage Range Low Dropout Regulators which delivers
Ultra Low Ground Current consumption, Good Noise and
Power Supply Rejection Ratio Performance.
The maximum power dissipation supported by the device
is dependent upon board design and layout. Mounting pad
configuration on the PCB, the board material, and the
ambient temperature affect the rate of junction temperature
rise for the part. The maximum power dissipation the
NCP716 can handle is given by:
Input Decoupling (CIN)
It is recommended to connect at least 0.1 mF Ceramic X5R
or X7R capacitor between IN and GND pin of the device.
This capacitor will provide a low impedance path for any
unwanted AC signals or Noise superimposed onto constant
Input Voltage. The good input capacitor will limit the
influence of input trace inductances and source resistance
during sudden load current changes.
Higher capacitance and lower ESR Capacitors will
improve the overall line transient response.
P D(MAX) +
ƪTJ(MAX) * TAƫ
(eq. 1)
R qJA
The power dissipated by the NCP716 for given
application conditions can be calculated from the following
equations:
P D [ V INǒI GND(I OUT)Ǔ ) I OUTǒV IN * V OUTǓ
(eq. 2)
or
Output Decoupling (COUT)
The NCP716 does not require a minimum Equivalent
Series Resistance (ESR) for the output capacitor. The device
is designed to be stable with standard ceramics capacitors
with values of 0.47 mF or greater up to 10 mF. The X5R and
X7R types have the lowest capacitance variations over
temperature thus they are recommended.
V IN(MAX) [
P D(MAX) ) ǒV OUT
I OUTǓ
I OUT ) I GND
(eq. 3)
For reliable operation, junction temperature should be
limited to +125°C maximum.
Hints
VIN and GND printed circuit board traces should be as
wide as possible. When the impedance of these traces is
high, there is a chance to pick up noise or cause the regulator
to malfunction. Place external components, especially the
output capacitor, as close as possible to the NCP716, and
make traces as short as possible.
ORDERING INFORMATION
Device
Voltage Option
Marking
NCP716MT12TBG
1.2 V
6A
NCP716MT15TG
1.5 V
6C
NCP716MT18TBG
1.8 V
6D
NCP716MT25TBG
2.5 V
6E
NCP716MT30TBG
3.0 V
6F
NCP716MT33TBG
3.3 V
6G
NCP716MT50TBG
5.0 V
6H
NCP716MTG50TBG
5.0 V
GH
Package
Shipping†
WDFN6
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
17
NCP716
PACKAGE DIMENSIONS
WDFN6 2x2, 0.65P
CASE 511BR
ISSUE B
D
ÇÇ
ÉÉ
A
B
A1
0.10 C
0.10 C
MOLD CMPD
ALTERNATE B−2
DETAIL B
ALTERNATE
CONSTRUCTIONS
E
L
L
TOP VIEW
ALTERNATE A−1
ALTERNATE A−2
DETAIL A
A3
ALTERNATE
CONSTRUCTIONS
A
6X
0.05 C
A1
NOTE 4
C
SIDE VIEW
SEATING
PLANE
1
MILLIMETERS
MIN
MAX
0.70
0.80
0.00
0.05
0.20 REF
0.25
0.35
2.00 BSC
1.50
1.70
2.00 BSC
0.90
1.10
0.65 BSC
0.40
0.20
--0.15
RECOMMENDED
MOUNTING FOOTPRINT*
D2
DETAIL A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED TERMINAL AND
IS MEASURED BETWEEN 0.15 AND 0.25 mm FROM
THE TERMINAL TIP.
4. COPLANARITY APPLIES TO THE EXPOSED PAD AS
WELL AS THE TERMINALS.
5. FOR DEVICES CONTAINING WETTABLE FLANK
OPTION, DETAIL A ALTERNATE CONSTRUCTION
A-2 AND DETAIL B ALTERNATE CONSTRUCTION
B-2 ARE NOT APPLICABLE.
DIM
A
A1
A3
b
D
D2
E
E2
e
L
L1
L1
DETAIL B
0.05 C
ÉÉ
ÇÇ
EXPOSED Cu
ALTERNATE B−1
ÍÍÍ
ÍÍÍ
ÍÍÍ
PIN ONE
REFERENCE
A3
1.72
L
3
6X
0.45
E2
1.12
6
4
6X
e
BOTTOM VIEW
2.30
b
0.10
M
C A
0.05
M
C
B
PACKAGE
OUTLINE
NOTE 3
6X
1
0.40
0.65
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
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For additional information, please contact your local
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NCP716/D