BDX33, BDX33A, BDX33B, BDX33C, BDX33D NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDX34, BDX34A, BDX34B, BDX34C and BDX34D ● 70 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3 A TO-220 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL 60 BDX33A BDX33B V CBO 100 BDX33D 120 BDX33 45 BDX33B 80 V 100 120 BDX33D Continuous collector current V 60 VCEO BDX33C Emitter-base voltage 80 BDX33C BDX33A Collector-emitter voltage (IB = 0) UNIT 45 BDX33 Collector-base voltage (IE = 0) VALUE VEBO 5 V IC 10 A IB 0.3 A Continuous device dissipation at (or below) 25°C case temperature (see Note 1) Ptot 70 W Continuous device dissipation at (or below) 25°C free air temperature (see Note 2) Ptot 2 W Operating free air temperature range TJ -65 to +150 °C Tstg -65 to +150 °C TA -65 to +150 °C Continuous base current Storage temperature range Operating free-air temperature range NOTES: 1. Derate linearly to 150°C case temperature at the rate of 0.56 W/°C. 2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. AUGUST 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 BDX33, BDX33A, BDX33B, BDX33C, BDX33D NPN SILICON POWER DARLINGTONS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER V(BR)CEO ICEO ICBO IEBO hFE VBE(on) Collector-emitter breakdown voltage TEST CONDITIONS IC = 100 mA VEC (see Note 3) 45 BDX33A 60 BDX33B 80 BDX33C 100 BDX33D 120 TYP MAX IB = 0 BDX33 0.5 VCE = 30 V IB = 0 BDX33A 0.5 VCE = 40 V IB = 0 BDX33B 0.5 VCE = 50 V IB = 0 BDX33C 0.5 Collector-emitter VCE = 60 V IB = 0 BDX33D 0.5 cut-off current VCE = 30 V IB = 0 TC = 100°C BDX33 10 VCE = 30 V IB = 0 TC = 100°C BDX33A 10 VCE = 40 V IB = 0 TC = 100°C BDX33B 10 VCE = 50 V IB = 0 TC = 100°C BDX33C 10 VCE = 60 V IB = 0 TC = 100°C BDX33D 10 VCB = 45 V IE = 0 BDX33 1 VCB = 60 V IE = 0 BDX33A 1 VCB = 80 V IE = 0 BDX33B 1 VCB = 100 V IE = 0 BDX33C 1 Collector cut-off VCB = 120 V IE = 0 BDX33D 1 current VCB = 45 V IE = 0 TC = 100°C BDX33 5 VCB = 60 V IE = 0 TC = 100°C BDX33A 5 VCB = 80 V IE = 0 TC = 100°C BDX33B 5 VCB = 100 V IE = 0 TC = 100°C BDX33C 5 VCB = 120 V IE = 0 TC = 100°C BDX33D 5 VEB = 5V IC = 0 Emitter cut-off current Forward current transfer ratio Base-emitter voltage VCE = 3V IC = 4 A BDX33 750 VCE = 3V IC = 4 A BDX33A 750 VCE = 3V IC = 3 A BDX33B 750 VCE = 3V IC = 3 A BDX33C 750 VCE = 3V IC = 3 A BDX33D 750 VCE = 3V IC = 4 A BDX33 2.5 VCE = 3V IC = 4 A BDX33A 2.5 VCE = 3V IC = 3 A BDX33B 2.5 VCE = 3V IC = 3 A BDX33C 2.5 Collector-emitter saturation voltage Parallel diode forward voltage (see Notes 3 and 4) 3V IC = 3 A BDX33D 2.5 IB = 8 mA IC = 4 A BDX33 2.5 IB = 8 mA IC = 4 A BDX33A 2.5 IB = 6 mA IC = 3 A BDX33B 2.5 IB = 6 mA IC = 3 A BDX33C 2.5 IB = 6 mA IC = 3 A BDX33D 2.5 IE = 8A (see Notes 3 and 4) IB = 0 4 mA mA 10 (see Notes 3 and 4) UNIT V VCE = 30 V VCE = VCE(sat) IB = 0 MIN BDX33 mA V V V NOTES: 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. 2 AUGUST 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. BDX33, BDX33A, BDX33B, BDX33C, BDX33D NPN SILICON POWER DARLINGTONS thermal characteristics PARAMETER MIN TYP MAX UNIT RθJC Junction to case thermal resistance 1.78 °C/W RθJA Junction to free air thermal resistance 62.5 °C/W MAX UNIT resistive-load-switching characteristics at 25°C case temperature PARAMETER † TEST CONDITIONS † MIN TYP ton Turn-on time IC = 3 A IB(on) = 12 mA IB(off) = -12 mA 1 µs toff Turn-off time VBE(off) = -3.5 V RL = 10 Ω tp = 20 µs, dc ≤ 2% 5 µs Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. AUGUST 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 3 BDX33, BDX33A, BDX33B, BDX33C, BDX33D NPN SILICON POWER DARLINGTONS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT VCE(sat) - Collector-Emitter Saturation Voltage - V TCS130AF 50000 hFE - Typical DC Current Gain COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT TC = -40°C TC = 25°C TC = 100°C 10000 1000 VCE = 3 V tp = 300 µs, duty cycle < 2% 100 0·5 1·0 10 TCS130AH 2·0 tp = 300 µs, duty cycle < 2% IB = IC / 100 1·5 1·0 TC = -40°C TC = 25°C TC = 100°C 0·5 0·5 IC - Collector Current - A 1·0 10 IC - Collector Current - A Figure 1. Figure 2. BASE-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT TCS130AJ VBE(sat) - Base-Emitter Saturation Voltage - V 3·0 2·5 TC = -40°C TC = 25°C TC = 100°C 2·0 1·5 1·0 IB = IC / 100 tp = 300 µs, duty cycle < 2% 0·5 0·5 1·0 10 IC - Collector Current - A Figure 3. 4 AUGUST 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. BDX33, BDX33A, BDX33B, BDX33C, BDX33D NPN SILICON POWER DARLINGTONS THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE TIS130AB Ptot - Maximum Power Dissipation - W 80 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 TC - Case Temperature - °C Figure 4. AUGUST 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 5