AP4543GEM-HF Halogen-Free Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement N-CH BVDSS D2 D2 ▼ Lower Gate Charge D1 RDS(ON) D1 ▼ Fast Switching Performance SO-8 S1 25mΩ ID G2 ▼ RoHS Compliant & Halogen-Free 40V S2 G1 7A P-CH BVDSS Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design,low on-resistance and costeffectiveness. -40V RDS(ON) 42mΩ ID -5.5A D1 G1 D2 G2 The SO-8 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. S1 S2 Absolute Maximum Ratings Symbol Parameter Rating N-channel VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25℃ ID@TA=70℃ Units P-channel 40 -40 V +20 +20 V Continuous Drain Current 3 7.0 -5.5 A Continuous Drain Current 3 5.5 -4.4 A 30 -30 A 1 IDM Pulsed Drain Current PD@TA=25℃ Total Power Dissipation TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ 2.0 W Thermal Data Symbol Rthj-a Parameter 3 Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice Value Unit 62.5 ℃/W 1 200909011 AP4543GEM-HF o N-CH Electrical Characteristics@ Tj=25 C(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Test Conditions Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Min. Typ. 40 - - V VGS=10V, ID=7A - - 25 mΩ VGS=4.5V, ID=5A - - 38 mΩ VGS=0V, ID=250uA 2 Max. Units VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance VDS=10V, ID=7A - 14 - S IDSS Drain-Source Leakage Current VDS=40V, VGS=0V - - 10 uA IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +30 uA Qg Total Gate Charge ID=7A - 7.5 12 nC Qgs Gate-Source Charge VDS=20V - 2 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 3.7 - nC 2 2 td(on) Turn-on Delay Time VDS=20V - 6 - ns tr Rise Time ID=1A - 6.5 - ns td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 19 - ns tf Fall Time RD=20Ω - 6.5 - ns Ciss Input Capacitance VGS=0V - 605 970 pF Coss Output Capacitance VDS=25V - 115 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 75 - pF Rg Gate Resistance f=1.0MHz - 2.1 - Ω Min. Typ. IS=1.7A, VGS=0V - - 1.2 V Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 2 Test Conditions Max. Units trr Reverse Recovery Time IS=7A, VGS=0V - 21 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 16 - nC 2 AP4543GEM-HF P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Test Conditions Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Min. Typ. -40 - - V VGS=-10V, ID=-5A - - 42 mΩ VGS=-4.5V, ID=-3A - - 65 mΩ VGS=0V, ID=-250uA 2 Max. Units VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1 - -3 V gfs Forward Transconductance VDS=-10V, ID=-5A - 10 - S IDSS Drain-Source Leakage Current VDS=-40V, VGS=0V - - -10 uA IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +30 uA ID=-5A - 11.5 18.5 nC 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=-20V - 2 - nC Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 7 - nC 2 td(on) Turn-on Delay Time VDS=-20V - 10 - ns tr Rise Time ID=-1A - 8 - ns td(off) Turn-off Delay Time RG=3.3Ω,VGS=-10V - 25 - ns tf Fall Time RD=20Ω - 30 - ns Ciss Input Capacitance VGS=0V - 690 1100 pF Coss Output Capacitance VDS=-25V - 160 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 135 - pF Rg Gate Resistance f=1.0MHz - 6 - Ω Min. Typ. IS=-1.7A, VGS=0V - - -1.2 V Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 2 Test Conditions Max. Units trr Reverse Recovery Time IS=-5A, VGS=0V - 29 - ns Qrr Reverse Recovery Charge dI/dt=-100A/µs - 24 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 2 3.Surface mounted on 1 in copper pad of FR4 board , t <10sec ; 135℃/W when mounted on min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 3 AP4543GEM-HF N-Channel 40 40 ID , Drain Current (A) 30 V G = 4.0 V 20 30 V G = 4.0V 20 10 10 0 0 0 1 2 3 0 4 1 V DS , Drain-to-Source Voltage (V) 3 4 5 6 Fig 2. Typical Output Characteristics 42 2.0 ID=5A ID=7A V G =10V T A =25 o C Normalized RDS(ON) 34 RDS(ON) (mΩ) 2 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 26 1.6 1.2 0.8 18 0.4 10 2 4 6 8 -50 10 Fig 3. On-Resistance v.s. Gate Voltage 0 25 50 75 100 125 150 Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.4 8 1.2 Normalized VGS(th) (V) 10 6 T j =150 o C -25 T j , Junction Temperature ( o C) V GS , Gate-to-Source Voltage (V) IS(A) 10V 7.0V 6.0V 5.0V T A = 150 o C ID , Drain Current (A) 10V 7.0V 6.0V 5.0V o T A = 25 C T j =25 o C 4 1 0.8 0.6 2 0.4 0 0 0.2 0.4 0.6 0.8 1 1.2 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.4 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 4 AP4543GEM-HF N-Channel f=1.0MHz 1000 8 800 I D =7A V DS =20V C (pF) VGS , Gate to Source Voltage (V) 10 6 600 C iss 4 400 2 200 C oss C rss 0 0 0 4 8 12 1 16 5 Q G , Total Gate Charge (nC) 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 100 Operation in this area limited by RDS(ON) 10 ID (A) 100us 1ms 1 10ms 100ms 0.1 1s T A =25 o C Single Pulse DC 0.01 Normalized Thermal Response (Rthja) Duty factor=0.5 0.2 0.1 0.1 0.05 0.02 0.01 PDM 0.01 t Single Pulse T Duty factor = t/T Peak Tj = PDM x Rthja + T a Rthja=135 oC/W 0.001 0.01 0.1 1 10 100 0.0001 0.001 V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area VDS 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG 90% QG 4.5V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 5 AP4543GEM-HF P-Channel 40 40 -10V -7.0V -6.0V -5.0V -ID , Drain Current (A) 30 o T A = 150 C -ID , Drain Current (A) o T A = 25 C V G = - 4.0V 20 -10V -7.0V -6.0V -5.0V 30 V G = - 4.0V 20 10 10 0 0 0 1 2 3 4 0 5 2 -V DS , Drain-to-Source Voltage (V) 4 6 8 -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 2.0 70 I D = -5A V G = -10V I D = -3 A T A =25 o C 60 Normalized RDS(ON) RDS(ON) (mΩ) 1.6 50 40 1.2 0.8 30 0.4 20 2 4 6 8 -50 10 0 50 100 150 o -V GS ,Gate-to-Source Voltage (V) T j , Junction Temperature ( C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 10 1.6 1.4 Normalized -VGS(th) (V) -IS(A) 8 6 T j =150 o C T j =25 o C 4 1.2 1.0 0.8 2 0.6 0 0.4 0 0.2 0.4 0.6 0.8 1 1.2 -V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.4 -50 0 50 100 150 o T j , Junction Temperature ( C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 6 AP4543GEM-HF P-Channel f=1.0MHz 1000 8 800 I D = -5 A V DS = -20 V C (pF) -VGS , Gate to Source Voltage (V) 10 6 C iss 600 . 4 400 2 200 0 C oss C rss 0 0 4 8 12 16 20 1 24 5 9 Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics 17 21 25 29 Fig 8. Typical Capacitance Characteristics 1 Operation in this area limited by RDS(ON) 10 100us 1ms 10ms 1 100ms 1s 0.1 o T c =25 C Single Pulse DC 0.01 Normalized Thermal Response (Rthja) 100 -ID (A) 13 -V DS , Drain-to-Source Voltage (V) Duty factor=0.5 0.2 0.1 0.1 0.05 PDM t 0.02 T 0.01 Duty factor = t/T Peak Tj = PDM x Rthja + T a Single Pulse Rthja=135 oC/W 0.01 0.01 0.1 1 10 100 0.001 0.01 0.1 -V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area 1 10 100 1000 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG -4.5V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 7