Diodes SMD Type Silicon PIN diode BAP70-02 SOD-523 +0.05 0.3-0.05 Unit: mm +0.1 1.2-0.1 +0.05 0.8-0.05 Features + +0.1 0.6-0.1 - High voltage, current controlled RF resistor for attenuators +0.1 1.6-0.1 Low diode capacitance 0.77max +0.05 0.1-0.02 0.07max Very low series inductance. Absolute Maxim um Ratings Ta = 25 Parameter Symbol Min Max Unit continuous reverse voltage VR 50 V continuous forward current IF 100 mA P tot 415 mW total power dissipation Ts = 90 storage temperature T stg -65 +150 junction temperature Tj -65 +150 thermal resistance from junction to soldering point R th j-s 145 K/W Electrical Characteristics Ta = 25 Parameter Symbol Conditions Typ Max forward voltage VF IF = 50 mA 0.9 1.1 V reverse leakage current IR V R =50 V 20 nA diode capacitance Cd diode forward resistance rD V R = 0; f = 1 MHz 570 V R = 1 V; f = 1 MHz 400 V R = 5 V; f = 1 MHz 270 V R = 20 V; f = 1 MHz 200 250 77 100 IF = 1 mA; f = 100 MHz; note 1 40 50 IF = 10 mA; f = 100 MHz; note 1 5.4 7 IF = 100 mA; f = 100 MHz; note 1 1.4 1.9 L R L = 100 series inductance LS fF IF = 0.5 mA; f = 100 MHz; note 1 when switched from IF = 10 mA to IR = 6 mA; charge carrier life time 1.25 s 0.6 nH ,measured at IR = 3 mA IF = 100 mA; f = 100 MHz Unit Note 1. Guaranteed on AQL basis: inspection level S4, AQL 1.0. Marking Marking K8 www.kexin.com.cn 1