Kexin BAP70-02 Silicon pin diode Datasheet

Diodes
SMD Type
Silicon PIN diode
BAP70-02
SOD-523
+0.05
0.3-0.05
Unit: mm
+0.1
1.2-0.1
+0.05
0.8-0.05
Features
+
+0.1
0.6-0.1
-
High voltage, current controlled RF resistor for attenuators
+0.1
1.6-0.1
Low diode capacitance
0.77max
+0.05
0.1-0.02
0.07max
Very low series inductance.
Absolute Maxim um Ratings Ta = 25
Parameter
Symbol
Min
Max
Unit
continuous reverse voltage
VR
50
V
continuous forward current
IF
100
mA
P tot
415
mW
total power dissipation
Ts = 90
storage temperature
T stg
-65
+150
junction temperature
Tj
-65
+150
thermal resistance from junction to soldering point
R th j-s
145
K/W
Electrical Characteristics Ta = 25
Parameter
Symbol
Conditions
Typ
Max
forward voltage
VF
IF = 50 mA
0.9
1.1
V
reverse leakage current
IR
V R =50 V
20
nA
diode capacitance
Cd
diode forward resistance
rD
V R = 0; f = 1 MHz
570
V R = 1 V; f = 1 MHz
400
V R = 5 V; f = 1 MHz
270
V R = 20 V; f = 1 MHz
200
250
77
100
IF = 1 mA; f = 100 MHz; note 1
40
50
IF = 10 mA; f = 100 MHz; note 1
5.4
7
IF = 100 mA; f = 100 MHz; note 1
1.4
1.9
L
R L = 100
series inductance
LS
fF
IF = 0.5 mA; f = 100 MHz; note 1
when switched from IF = 10 mA to IR = 6 mA;
charge carrier life time
1.25
s
0.6
nH
,measured at IR = 3 mA
IF = 100 mA; f = 100 MHz
Unit
Note
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
Marking
Marking
K8
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