SOT23 PNP SILICON PLANAR SWITCHING TRANSISTORS FMMT3905 FMMT3906 ISSUE 4 – MARCH 2000 SWITCHING CHARACTERISTICS (at Tamb=25 °C unless otherwise stated) PARAMETER FMMT3905 FMMT3906 SYMBOL FMMT3905 MIN MAX FMMT3906 MIN VCC=-3V, VBE(off)=-0.5V IC=-10mA, IB1=-1mA (See Fig.1) COMPLEMENTARY TYPES - VCC=-3V, IC=-10mA IB1=-IB2=-1mA (See Fig.2) ABSOLUTE MAXIMUM RATINGS. td 35 35 ns tr 35 35 ns Storage Time ts 200 225 ns Fall Time tf 60 75 ns E C MAX Delay Time Equivalent Test Circuit FMMT3905 - 2W FMMT3906 - 2A CONDITIONS Rise Time Delay and Rise Time PARTMARKING DETAILS - UNIT FMMT3905 - FMMT3903 FMMT3906 - FMMT3904 B PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -40 V CollectorEmitter Voltage VCEO -40 V Emitter-Base Voltage VEBO Continuous Collector Current IC Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg -5 V -200 mA 330 mW -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL FMMT3905 MIN Equivalent Test Circuit MAX MIN MAX BreakdownVoltages V(BR)CBO -40 -40 V IC=-10µ A, IE=0 V(BR)CEO -40 -40 V IC=-1mA, IB=0* V(BR)EBO -5 -5 V IE=-10µ A, IC=0 Cut-Off Currents Storage and Fall Time FMMT3906. UNIT CONDITIONS. ICEX -50 -50 nA VCE=-30V, VBE(off)=-3V IBEX -50 -50 nA VCE=-30V, VEB(off)=-3V Static Forward Current Transfer Ratio hFE Saturation Voltages VCE(sat) Transition Frequency 30 40 50 30 15 150 60 80 100 60 30 -0.25 -0.4 IC=-0.1mA, VCE=-1V* IC=-1mA, VCE=-1V* IC=-10mA, VCE=-1V* IC=-50mA, VCE=-1V* IC=-100mA, VCE=-1V* 300 0.25 0.4 V V IC=-10mA, IB=-1mA* IC=-50mA, IB=-5mA* VBE(sat) -0.65 -0.85 -0.65 -0.85 V -0.95 -0.95 V IC=-10mA, IB=-1mA* IC=-50mA, IB=-5mA* fT 200 250 MHz IC=-10mA, VCE=-20V f=100MHz Output Capacitance Cobo 4.5 4.5 pF VCB=-5V, IE=0, f=100KHz Input Capacitance Cibo 10 10 pF VBE=0.5V, IC=0, f=100KHz Noise Figure N 5 4 dB IC=-200mA, VCE=-5V Rg=2kΩ , f=30Hz to 15kHz at -3dB points *Measured under pulsed conditions. Pulse width=200µs. Duty cycle =1% PAGE NUMBER PAGE NUMBER SOT23 NPN SILICON PLANAR SWITCHING TRANSISTORS FMMT3905 FMMT3906 SWITCHING CHARACTERISTICS (at Tamb=25 °C unless otherwise stated) PARAMETER SYMBOL FMMT3905 MIN MAX FMMT3906 MIN PARTMARKING DETAILS - FMMT3905 - 2W FMMT3906 - 2A CONDITIONS VCC=-3V, VBE(off)=-0.5V IC=-10mA, IB1=-1mA (See Fig.1) COMPLEMENTARY TYPES - VCC=-3V, IC=-10mA IB1=-IB2=-1mA (See Fig.2) ABSOLUTE MAXIMUM RATINGS. td 35 35 ns tr 35 35 ns Storage Time ts 200 225 ns Fall Time tf 60 75 ns E C MAX Delay Time Equivalent Test Circuit ✪ UNIT Rise Time Delay and Rise Time ISSUE 3 NOVEMBER 1995 FMMT3905 FMMT3906 FMMT3905 - FMMT3903 FMMT3906 - FMMT3904 B PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -40 V CollectorEmitter Voltage VCEO -40 V Emitter-Base Voltage VEBO Continuous Collector Current IC Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg -5 V -200 mA 330 mW -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL FMMT3905 MIN Equivalent Test Circuit MAX MIN MAX BreakdownVoltages V(BR)CBO -40 -40 V IC=-10µ A, IE=0 V(BR)CEO -40 -40 V IC=-1mA, IB=0* V(BR)EBO -5 -5 V IE=-10µ A, IC=0 Cut-Off Currents Storage and Fall Time FMMT3906. UNIT CONDITIONS. ICEX -50 -50 nA VCE=-30V, VBE(off)=-3V IBEX -50 -50 nA VCE=-30V, VEB(off)=-3V Static Forward Current Transfer Ratio hFE Saturation Voltages VCE(sat) Transition Frequency 30 40 50 30 15 150 60 80 100 60 30 -0.25 -0.4 IC=-0.1mA, VCE=-1V* IC=-1mA, VCE=-1V* IC=-10mA, VCE=-1V* IC=-50mA, VCE=-1V* IC=-100mA, VCE=-1V* 300 0.25 0.4 V V IC=-10mA, IB=-1mA* IC=-50mA, IB=-5mA* VBE(sat) -0.65 -0.85 -0.65 -0.85 V -0.95 -0.95 V IC=-10mA, IB=-1mA* IC=-50mA, IB=-5mA* fT 200 250 MHz IC=-10mA, VCE=-20V f=100MHz Output Capacitance Cobo 4.5 4.5 pF VCB=-5V, IE=0, f=100KHz Input Capacitance Cibo 10 10 pF VBE=0.5V, IC=0, f=100KHz Noise Figure N 5 4 dB IC=-200mA, VCE=-5V Rg=2kΩ , f=30Hz to 15kHz at -3dB points *Measured under pulsed conditions. Pulse width=200µs. Duty cycle =1% PAGE NUMBER PAGE NUMBER