CYStech Electronics Corp. Spec. No. : C140H8 Issued Date : 2016.01.18 Revised Date : Page No. : 1/ 9 Dual N-Channel Enhancement Mode Power MOSFET MTD07A04DH8 Features • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • Pb-free lead plating and Halogen-free package Equivalent Circuit BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TC=100°C ID@VGS=10V, TA=25°C ID@VGS=10V, TA=70°C RDS(ON)@VGS=10V, ID=17A RDS(ON)@VGS=4.5V, ID=10A 40V 40A 25.3A 9A 7.2A 6.7mΩ(typ) 8.7mΩ(typ) Outline DFN5×6 MTD07A04DH8 Pin 1 G：Gate D：Drain S：Source Ordering Information Device MTD07A04DH8-0-T6-G Package DFN 5 ×6 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T6 : 3000 pcs / tape & reel,13” reel Product rank, zero for no rank products Product name MTD07A04DH8 CYStek Product Specification Spec. No. : C140H8 Issued Date : 2016.01.18 Revised Date : Page No. : 2/ 9 CYStech Electronics Corp. Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @TC=25°C, VGS=10V (Note 1) Continuous Drain Current @TC=100°C, VGS=10V (Note 1) Continuous Drain Current @TA=25°C, VGS=10V (Note 2) Continuous Drain Current @TA=70°C, VGS=10V (Note 2) Pulsed Drain Current @ VGS=10V (Note 3) Avalanche Current (Note 3) Single Pulse Avalanche Energy @ L=0.5mH, ID=20Amps, VDD=50V (Note 5) Repetitive Avalanche Energy (Note 3) TC=25°C (Note 1) TC=100°C (Note 1) Power Dissipation TA=25°C (Note 2) TA=70°C (Note 2) Operating Junction and Storage Temperature Symbol Limits VDS VGS IDM IAS 40 ±20 40 25.3 9 7.2 160 20 EAS 100 EAR 3.1 31 12.4 1.5 0.96 -55~+150 ID IDSM PD PDSM Tj, Tstg Unit V A mJ W °C *Drain current limited by maximum junction temperature Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol RθJC RθJA (Note 4) Value 4 85 Unit °C/W Note : 1.The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. 2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment with TA=25°C. The value in any given application depends on the user’s specific board design. The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. 3. Ratings are based on low frequency and low duty cycles to keep initial TJ=25°C. 4. When mounted on1 in² copper pad of FR-4 board ; 125°C/W when mounted on minimum copper pad. 5. 100% tested by conditions of L=0.5mH, IAS=12A, VGS=10V, VDD=25V. Characteristics (Tj=25°C, unless otherwise specified) Symbol Static BVDSS ∆BVDSS/∆Tj VGS(th) *GFS IGSS IDSS MTD07A04DH8 Min. Typ. Max. Unit Test Conditions 40 1.5 - 0.03 24 - 2.5 ±100 1 25 V V/°C V S nA VGS=0V, ID=250μA Reference to 25°C, ID=250μA VDS = VGS, ID=250μA VDS =5V, ID=17A VGS=±20V VDS =40V, VGS =0V VDS =40V, VGS =0V, Tj=125°C μA CYStek Product Specification Spec. No. : C140H8 Issued Date : 2016.01.18 Revised Date : Page No. : 3/ 9 CYStech Electronics Corp. *RDS(ON) - Dynamic *Qg *Qgs *Qgd *td(ON) *tr *td(OFF) *tf Ciss Coss Crss Rg Source-Drain Diode *IS *ISM *VSD *trr *Qrr - 6.7 8.7 9.3 13.8 29.4 6.5 7.3 15.6 19.6 49.6 12.4 1514 188 119 1.7 44.1 24 30 75 19 1895 235 150 - 0.83 14.3 9.2 40 160 1.1 - mΩ VGS =10V, ID=17A VGS =4.5V, ID=10A nC VDS=20V, ID=16A, VGS=10V ns VDS=20V, ID=1A, VGS=10V, RG=6Ω pF VGS=0V, VDS=20V, f=1MHz Ω f=1MHz A V ns nC IS=17A, VGS=0V VGS=0, IF=10A, dI/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% Recommended Soldering Footprint unit : mm MTD07A04DH8 CYStek Product Specification Spec. No. : C140H8 Issued Date : 2016.01.18 Revised Date : Page No. : 4/ 9 CYStech Electronics Corp. Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 1.4 10V 9V 8V 7V ID, Drain Current(A) 120 BVDSS, Normalized Drain-Source Breakdown Voltage 150 VGS=6V 90 VGS=5V 60 VGS=4.5V 30 VGS=3.5V 1.2 1 0.8 ID=250μA, VGS=0V 0.6 VGS=4V 0.4 0 0 2 4 6 8 VDS, Drain-Source Voltage(V) -75 -50 -25 10 Reverse Drain Current vs Source-Drain Voltage Static Drain-Source On-State resistance vs Drain Current 100 VSD, Source-Drain Voltage(V) R DS(ON) , Static Drain-Source On-State Resistance(mΩ) 1.2 VGS=4.5V 10 VGS=10V 1 Tj=25°C 0.8 0.6 Tj=150°C 0.4 0.2 1 0.01 0.1 1 10 ID, Drain Current(A) 0 100 4 8 12 16 IDR , Reverse Drain Current(A) 20 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage 3 R DS(ON) , Normalized Static DrainSource On-State Resistance 100 R DS(ON) , Static Drain-Source OnState Resistance(mΩ) 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) ID=17A 80 60 40 20 2.5 VGS=10V, ID=17A 2 1.5 1 0.5 RDS(ON) @Tj=25°C : 6.7mΩ typ 0 0 0 MTD07A04DH8 2 4 6 8 VGS, Gate-Source Voltage(V) 10 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) CYStek Product Specification CYStech Electronics Corp. Spec. No. : C140H8 Issued Date : 2016.01.18 Revised Date : Page No. : 5/ 9 Typical Characteristics(Cont.) NormalizedThreshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage VGS(th), Normalized Threshold Voltage 10000 Capacitance---(pF) Ciss 1000 C os 100 Crss 1.4 1.2 ID=1mA 1 0.8 ID=250μA 0.6 0.4 10 0 5 10 15 20 25 VDS, Drain-Source Voltage(V) -75 -50 -25 30 Forward Transfer Admittance vs Drain Current Gate Charge Characteristics 10 VGS, Gate-Source Voltage(V) GFS , Forward Transfer Admittance(S) 100 10 1 VDS=5V Pulsed Ta=25°C 0.1 0.01 0.001 8 6 4 2 VDS=20V ID=16A 0 0.01 0.1 1 ID, Drain Current(A) 10 0 100 4 8 12 16 20 24 Total Gate Charge---Qg(nC) 28 32 Maximum Drain Current vs Case Temperature Maximum Safe Operating Area 50 1000 45 RDS(ON) Limited 100 ID, Maximum Drain Current(A) ID, Drain Current(A) 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) 100μs 1ms 10ms 10 100ms 1s 1 TC=25°C, Tj=150°, VGS=10V RθJC=4°C/W, Single Pulse DC 40 35 30 25 20 15 10 VGS=10V, RθJC=4°C/W 5 0 0.1 0.1 MTD07A04DH8 1 10 100 VDS, Drain-Source Voltage(V) 1000 25 50 75 100 125 TC , Case Temperature(°C) 150 175 CYStek Product Specification Spec. No. : C140H8 Issued Date : 2016.01.18 Revised Date : Page No. : 6/ 9 CYStech Electronics Corp. Typical Characteristics(Cont.) Typical Transfer Characteristics Single Pulse Maximum Power Dissipation 3000 150 VDS=10V ID, Drain Current (A) TJ(MAX) =150°C TC=25°C RθJC=4°C/W 2500 120 Power (W) 2000 90 60 1500 1000 30 500 0 0 2 4 6 8 VGS, Gate-Source Voltage(V) 10 0 0.0001 0.001 0.01 0.1 Pulse Width(s) 1 10 Transient Thermal Response Curves 1 r(t), Normalized Effective Transient Thermal Resistance D=0.5 0.2 0.1 1.RθJC(t)=r(t)*RθJC 2.Duty Factor, D=t1/t2 3.TJM-TC=PDM*RθJC(t) 4.RθJC=4 °C/W 0.1 0.05 0.02 0.01 0.01 Single Pulse 0.001 1.E-04 MTD07A04DH8 1.E-03 1.E-02 1.E-01 1.E+00 t1, Square Wave Pulse Duration(s) 1.E+01 1.E+02 1.E+03 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C140H8 Issued Date : 2016.01.18 Revised Date : Page No. : 7/ 9 Reel Dimension Carrier Tape Dimension Pin #1 MTD07A04DH8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C140H8 Issued Date : 2016.01.18 Revised Date : Page No. : 8/ 9 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTD07A04DH8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C140H8 Issued Date : 2016.01.18 Revised Date : Page No. : 9/ 9 DFN5×6 Dimension Marking: Device Name Date Code D07A 04D 8-L8-Lead ead power pakPlastic PlasticPackage Package DFN5×6 CYCYS StekPackage Package Code: Code : H8H8 Millimeters Min. Max. 0.80 1.00 0.00 0.05 0.35 0.49 0.254 REF 4.90 5.10 1.60 REF DIM A A1 b c D F Inches Min. Max. 0.031 0.039 0.000 0.002 0.014 0.019 0.010 REF 0.193 0.201 0.063 REF DIM E e H L1 G K Millimeters Min. Max. 5.70 5.90 1.27 BSC 5.95 6.20 0.10 0.18 0.60 REF 1.60 REF Inches Min. Max. 0.224 0.232 0.050 BSC 0.234 0.244 0.004 0.007 0.024 REF 0.063 REF Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTD07A04DH8 CYStek Product Specification