High Voltage, High speed IGBT IXSH 35N120A VCES IC25 VCE(sat) Maximum Ratings TO-247 AD = 1200 V = 70 A = 4V Short Circuit SOA Capability Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 70 A IC90 TC = 90°C 35 A ICM TC = 25°C, 1 ms 140 A SSOA (RBSOA) VGE = 15 V, TJ = 125°C, RG = 22 W Clamped inductive load, L = 30 mH ICM = 70 @ 0.8 VCES A tSC (SCSOA) VGE = 15 V, VCE = 0.6 • VCES, TJ = 125°C RG = 22 W, non repetitive 10 ms PC TC = 25°C 300 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C Mounting torque ● ● 1.13/10 Nm/lb.in. ● Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s 6 g 300 °C ● ● Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. BVCES IC = 3 mA, VGE = 0 V 1200 VGE(th) IC = 4 mA, VCE = VGE 4 ICES VCE = 0.8 • VCES VGE = 0 V VCE = 0 V, VGE = ±20 V VCE(sat) IC ● V ● ● TJ = 25°C TJ = 125°C = IC90, VGE = 15 V IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved C = Collector, TAB = Collector 6 8 International standard package JEDEC TO-247 High frequency IGBT with guaranteed Short Circuit SOA capability Fast Fall Time for switching speeds up to 20 kHz 2nd generation HDMOSTM process Low VCE(sat) - for minimum on-state conduction losses MOS Gate turn-on - drive simplicity Applications ● IGES E Features Weight Symbol C G = Gate, E = Emitter, ● TJ Md G V ● 400 1.2 mA mA ±100 nA ● 4 V ● AC motor speed control DC servo and robot drive Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies Welding Advantages Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) High power density 92774E (12/96) 1-4 IXSH 35N120A Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs IC = IC90; VCE = 10 V, Pulse test, t £ 300 ms, duty cycle d £ 2 % IC(on) VGE = 15 V, VCE = 10 V C ies 26 S 170 A 3750 pF 235 pF C res 60 pF Qg 150 190 nC 40 60 nC 70 100 nC Coes Qge VCE = 25 V, VGE = 0 V, f = 1 MHz 20 IC = IC90, VGE = 15 V, VCE = 0.5 VCES Qgc td(on) t ri td(off) tfi Eoff Inductive load, TJ = 25°C IC = IC90, VGE = 15 V, L = 100 mH VCE = 0.8 VCES, RG = 2.7 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG 80 ns 150 ns 400 900 ns 500 700 ns TO-247 AD (IXSH) Outline Dim. Millimeter Min. Max. Inches Min. Max. A B 19.81 20.32 20.80 21.46 0.780 0.800 0.819 0.845 C D 15.75 16.26 3.55 3.65 0.610 0.640 0.140 0.144 E F 4.32 5.49 5.4 6.2 0.170 0.216 0.212 0.244 10 mJ 80 ns G H 1.65 2.13 4.5 0.065 0.084 0.177 1.0 1.4 10.8 11.0 0.040 0.055 0.426 0.433 td(on) Inductive load, TJ = 125°C t ri IC = IC90, VGE = 15 V, L = 100 mH 150 ns J K Eon VCE = 0.8 VCES, RG = 2.7 W 2.5 mJ td(off) Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG 400 ns L M 4.7 0.4 5.3 0.8 0.185 0.209 0.016 0.031 700 ns N 1.5 2.49 0.087 0.102 15 mJ tfi Eoff RthJC RthCK © 2000 IXYS All rights reserved 0.42 K/W 0.25 K/W IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-4 IXSH 35N120A Fig.1 Saturation Characteristics 70 VGE =15V TJ = 25°C Fig.2 Output Characterstics 250 13V 60 VGE = 15V TJ = 25°C 11V IC - Amperes IC - Amperes 200 50 40 30 9V 20 13V 150 11V 100 50 10 9V 7V 7V 0 0 0 1 2 3 4 5 0 2 4 6 VCE - Volts Fig.4 Temperature Dependence of Output Saturation Voltage 1.4 TJ = 25°C 9 VGE=15V 1.3 VCE(sat) - Normalized 8 7 VCE - Volts 10 12 14 16 18 20 VCE - Volts Fig.3 Collector-Emitter Voltage vs. Gate-Emitter Voltage 10 8 6 IC = 70A 5 4 IC = 35A 3 IC = 17.5A 2 IC = 70A 1.2 1.1 IC = 35A 1.0 0.9 IC =1 7.5A 0.8 1 0 8 9 10 11 12 13 14 0.7 -50 15 -25 0 VGE - Volts 25 50 75 100 125 150 TJ - Degrees C Fig.5 Input Admittance Fig.6 Temperature Dependence of Breakdown and Threshold Voltage 1.3 50 IC - Amperes 40 30 20 TJ = 125°C TJ = 25°C 10 TJ = - 40C 0 4 5 6 7 8 9 10 11 12 13 14 15 VGE - Volts © 2000 IXYS All rights reserved BV / VGE(th) - Normalized VCE = 10V 1.2 VGE(th) IC = 4mA 1.1 1.0 0.9 BVCES IC = 3mA 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ - Degrees C 3-4 IXSH 35N120A Fig.7 Turn-Off Energy per Pulse and Fall Time on Collector Current 25 TJ = 125°C 1250 18 TJ = 125°C RG = 10W 20 tfi 750 500 15 10 Eoff 1000 17 tfi 750 16 500 15 Eoff 250 0 Eoff - millijoules tfi - nanoseconds 1000 tfi - nanoseconds IC = 35A 10 20 30 40 50 60 250 5 70 0 10 20 IC - Amperes 40 14 50 Fig.10 Turn-Off Safe Operating Area 100 IC = 35A VCE = 500V 12 TJ = 125°C 10 IC - Amperes VGE- Volts 30 RG - Ohms Fig.9 Gate Charge Characteristic Curve 15 Eoff - millijoules 1250 Fig.8 Dependence of Turn-Off Energy Per Pulse and Fall Time on RG 9 6 RG = 2.7W dV/dt < 5V/ns 1 0.1 3 0 0.01 0 50 100 150 200 0 200 QG - nanocoulombs 400 600 800 1000 1200 VCE - Volts Fig.11 Transient Thermal Impedance 1 ZthjJC - K/W D=0.5 0.1 D=0.2 D=0.1 D=0.05 D=0.02 D = Duty Cycle 0.01 D=0.01 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds S35N12 2 JNB IXSH35N120 © 2000 IXYS All rights reserved 4-4