IXYS IXSH35N120A High voltage, high speed igbt Datasheet

High Voltage,
High speed IGBT
IXSH 35N120A
VCES
IC25
VCE(sat)
Maximum Ratings
TO-247 AD
= 1200 V
= 70 A
= 4V
Short Circuit SOA Capability
Symbol
Test Conditions
VCES
TJ = 25°C to 150°C
1200
V
VCGR
TJ = 25°C to 150°C; RGE = 1 MW
1200
V
VGES
Continuous
±20
V
VGEM
Transient
±30
V
IC25
TC = 25°C
70
A
IC90
TC = 90°C
35
A
ICM
TC = 25°C, 1 ms
140
A
SSOA
(RBSOA)
VGE = 15 V, TJ = 125°C, RG = 22 W
Clamped inductive load, L = 30 mH
ICM = 70
@ 0.8 VCES
A
tSC
(SCSOA)
VGE = 15 V, VCE = 0.6 • VCES, TJ = 125°C
RG = 22 W, non repetitive
10
ms
PC
TC = 25°C
300
W
-55 ... +150
°C
TJM
150
°C
Tstg
-55 ... +150
°C
Mounting torque
●
●
1.13/10 Nm/lb.in.
●
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
6
g
300
°C
●
●
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
BVCES
IC
= 3 mA, VGE = 0 V
1200
VGE(th)
IC
= 4 mA, VCE = VGE
4
ICES
VCE = 0.8 • VCES
VGE = 0 V
VCE = 0 V, VGE = ±20 V
VCE(sat)
IC
●
V
●
●
TJ = 25°C
TJ = 125°C
= IC90, VGE = 15 V
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
C = Collector,
TAB = Collector
6
8
International standard package
JEDEC TO-247
High frequency IGBT with guaranteed
Short Circuit SOA capability
Fast Fall Time for switching speeds
up to 20 kHz
2nd generation HDMOSTM process
Low VCE(sat)
- for minimum on-state conduction
losses
MOS Gate turn-on
- drive simplicity
Applications
●
IGES
E
Features
Weight
Symbol
C
G = Gate,
E = Emitter,
●
TJ
Md
G
V
●
400
1.2
mA
mA
±100
nA
●
4
V
●
AC motor speed control
DC servo and robot drive
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
Welding
Advantages
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
High power density
92774E (12/96)
1-4
IXSH 35N120A
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs
IC = IC90; VCE = 10 V,
Pulse test, t £ 300 ms, duty cycle d £ 2 %
IC(on)
VGE = 15 V, VCE = 10 V
C ies
26
S
170
A
3750
pF
235
pF
C res
60
pF
Qg
150
190
nC
40
60
nC
70
100
nC
Coes
Qge
VCE = 25 V, VGE = 0 V, f = 1 MHz
20
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Qgc
td(on)
t ri
td(off)
tfi
Eoff
Inductive load, TJ = 25°C
IC = IC90, VGE = 15 V, L = 100 mH
VCE = 0.8 VCES, RG = 2.7 W
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES,
higher TJ or increased RG
80
ns
150
ns
400
900
ns
500
700
ns
TO-247 AD (IXSH) Outline
Dim. Millimeter
Min. Max.
Inches
Min. Max.
A
B
19.81 20.32
20.80 21.46
0.780 0.800
0.819 0.845
C
D
15.75 16.26
3.55 3.65
0.610 0.640
0.140 0.144
E
F
4.32 5.49
5.4
6.2
0.170 0.216
0.212 0.244
10
mJ
80
ns
G
H
1.65 2.13
4.5
0.065 0.084
0.177
1.0
1.4
10.8 11.0
0.040 0.055
0.426 0.433
td(on)
Inductive load, TJ = 125°C
t ri
IC = IC90, VGE = 15 V, L = 100 mH
150
ns
J
K
Eon
VCE = 0.8 VCES, RG = 2.7 W
2.5
mJ
td(off)
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES,
higher TJ or increased RG
400
ns
L
M
4.7
0.4
5.3
0.8
0.185 0.209
0.016 0.031
700
ns
N
1.5 2.49
0.087 0.102
15
mJ
tfi
Eoff
RthJC
RthCK
© 2000 IXYS All rights reserved
0.42 K/W
0.25
K/W
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
2-4
IXSH 35N120A
Fig.1 Saturation Characteristics
70
VGE =15V
TJ = 25°C
Fig.2 Output Characterstics
250
13V
60
VGE = 15V
TJ = 25°C
11V
IC - Amperes
IC - Amperes
200
50
40
30
9V
20
13V
150
11V
100
50
10
9V
7V
7V
0
0
0
1
2
3
4
5
0
2
4
6
VCE - Volts
Fig.4 Temperature Dependence
of Output Saturation Voltage
1.4
TJ = 25°C
9
VGE=15V
1.3
VCE(sat) - Normalized
8
7
VCE - Volts
10 12 14 16 18 20
VCE - Volts
Fig.3 Collector-Emitter Voltage
vs. Gate-Emitter Voltage
10
8
6
IC = 70A
5
4
IC = 35A
3
IC = 17.5A
2
IC = 70A
1.2
1.1
IC = 35A
1.0
0.9
IC =1 7.5A
0.8
1
0
8
9
10
11
12
13
14
0.7
-50
15
-25
0
VGE - Volts
25
50
75
100 125 150
TJ - Degrees C
Fig.5 Input Admittance
Fig.6 Temperature Dependence of
Breakdown and Threshold Voltage
1.3
50
IC - Amperes
40
30
20
TJ = 125°C
TJ = 25°C
10
TJ = - 40C
0
4
5
6
7
8
9
10 11 12 13 14 15
VGE - Volts
© 2000 IXYS All rights reserved
BV / VGE(th) - Normalized
VCE = 10V
1.2
VGE(th)
IC = 4mA
1.1
1.0
0.9
BVCES
IC = 3mA
0.8
0.7
-50
-25
0
25
50
75
100 125 150
TJ - Degrees C
3-4
IXSH 35N120A
Fig.7 Turn-Off Energy per Pulse and
Fall Time on Collector Current
25
TJ = 125°C
1250
18
TJ = 125°C
RG = 10W
20
tfi
750
500
15
10
Eoff
1000
17
tfi
750
16
500
15
Eoff
250
0
Eoff - millijoules
tfi - nanoseconds
1000
tfi - nanoseconds
IC = 35A
10
20
30
40
50
60
250
5
70
0
10
20
IC - Amperes
40
14
50
Fig.10 Turn-Off Safe Operating Area
100
IC = 35A
VCE = 500V
12
TJ = 125°C
10
IC - Amperes
VGE- Volts
30
RG - Ohms
Fig.9 Gate Charge Characteristic Curve
15
Eoff - millijoules
1250
Fig.8 Dependence of Turn-Off Energy
Per Pulse and Fall Time on RG
9
6
RG = 2.7W
dV/dt < 5V/ns
1
0.1
3
0
0.01
0
50
100
150
200
0
200
QG - nanocoulombs
400
600
800
1000
1200
VCE - Volts
Fig.11 Transient Thermal Impedance
1
ZthjJC - K/W
D=0.5
0.1
D=0.2
D=0.1
D=0.05
D=0.02
D = Duty Cycle
0.01 D=0.01
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
S35N12 2 JNB IXSH35N120
© 2000 IXYS All rights reserved
4-4
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