Inchange Semiconductor Product Specification BD190 Silicon PNP Power Transistors · DESCRIPTION ·With TO-126 package ·High current ·Complement to type BD189 APPLICATIONS ·For use in 5 to 10 watt audio amplifiers utilizing complementary or quasi complementary circuits. PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -70 V VCEO Collector-emitter voltage Open base -60 V VEBO Emitter -base voltage Open collector -5 V IC Collector current (DC) -4 A IB Base current -2 A Pt Total power dissipation 40 W Tj Junction temperature -65~150 ℃ Tstg Storage temperature -65~150 ℃ VALUE UNIT 3.12 ℃/W Tmb≤70℃ THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER Thermal resistance, junction to case Inchange Semiconductor Product Specification BD190 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX V(SUS)CEO Collector-emitter sustaining voltage IC=-0.1A; IB=0 VCEsat Collector-emitter saturation voltage IC=-2.0A; IB=-0.2A -1.0 V VBE Base-emitter on voltage IC=-2A ; VCE=-2V -1.5 V ICBO Collector cut-off current VCB=-70V; IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-5V; IC=0 -1.0 mA hFE-1 DC current gain IC=-0.5A ; VCE=-2V 40 hFE-2 DC current gain IC=-2A ; VCE=-2V 15 Transition frequency IC=-1.0A; VCE=-10V ;f=1.0MHz 2.0 fT 2 -60 UNIT V MHz Inchange Semiconductor Product Specification BD190 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3