Spec. No. : C966H8 Issued Date : 2015.03.23 Revised Date : Page No. : 1/ 9 CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTE130N20H8 BVDSS ID@VGS=10V, TC=25°C RDS(ON)@VGS=10V, ID=9A 200V 11A 156 mΩ(typ) Features • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • Pb-free lead plating and Halogen-free package Symbol Outline DFN5×6 MTE130N20H8 Pin 1 G：Gate D：Drain S：Source Ordering Information Device MTE130N20H8-0-T6-G Package DFN 5 ×6 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T6 : 3000 pcs / tape & reel,13” reel Product rank, zero for no rank products Product name MTE130N20H8 CYStek Product Specification Spec. No. : C966H8 Issued Date : 2015.03.23 Revised Date : Page No. : 2/ 9 CYStech Electronics Corp. Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @TC=25°C, VGS=10V Continuous Drain Current @TC=100°C, VGS=10V Continuous Drain Current @TA=25°C, VGS=10V Continuous Drain Current @TA=70°C, VGS=10V Pulsed Drain Current @ VGS=10V Avalanche Current Single Pulse Avalanche Energy @ L=1mH, ID=3Amps, VDD=50V Repetitive Avalanche Energy TC=25°C TC=100°C Power Dissipation TA=25°C TA=70°C Operating Junction and Storage Temperature Symbol Limits (Note 1) VDS VGS (Note 1) ID IDM IAS 200 ±20 11 7 2.4 1.9 30 3 EAS 4.5 (Note 3) EAR (Note 1) PD 4.5 50 20 2.5 1.6 -55~+150 (Note 1) (Note 2) (Note 2) (Note 3) (Note 3) (Note 2) (Note 1) (Note 2) (Note 2) IDSM PDSM Tj, Tstg Unit V A mJ W °C *Drain current limited by maximum junction temperature Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol RθJC RθJA (Note 4) Value 2.5 50 Unit °C/W °C/W Note : 1.The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. . 2 The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment with TA=25°C. The value in any given application depends on the user’s specific board design. The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. 3. Ratings are based on low frequency and low duty cycles to keep initial TJ=25°C. 4. When mounted on1 in² copper pad of FR-4 board, t≤10s; 125°C/W when mounted on minimum copper pad. . Characteristics (Tj=25°C, unless otherwise specified) Symbol Static BVDSS ∆BVDSS/∆Tj VGS(th) *GFS IGSS IDSS MTE130N20H8 Min. Typ. Max. Unit Test Conditions 200 2.0 - 0.2 12 - 4.0 ±100 1 25 V V/°C V S nA VGS=0V, ID=250μA Reference to 25°C, ID=250μA VDS = VGS, ID=250μA VDS =10V, ID=9A VGS=±20V VDS =180V, VGS =0V VDS =180V, VGS =0V, Tj=125°C μA CYStek Product Specification CYStech Electronics Corp. *RDS(ON) Dynamic *Qg *Qgs *Qgd *td(ON) *tr *td(OFF) *tf Ciss Coss Crss Source-Drain Diode *IS *ISM *VSD *trr *Qrr - 156 195 19 5 7.2 12.6 35 27.6 14.6 813 85 36 - 0.84 80 245 11 30 1.2 - Spec. No. : C966H8 Issued Date : 2015.03.23 Revised Date : Page No. : 3/ 9 mΩ VGS =10V, ID=9A nC VDS=160V, ID=11A, VGS=10V ns VDS=100V, ID=11A, VGS=10V, RG=6Ω pF VGS=0V, VDS=25V, f=1MHz A V ns nC IS=10A, VGS=0V VGS=0, IF=10A, dI/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% Recommended Soldering Footprint unit : mm MTE130N20H8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C966H8 Issued Date : 2015.03.23 Revised Date : Page No. : 4/ 9 Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 1.4 30 BVDSS, Normalized Drain-Source Breakdown Voltage 10V, 9V, 8V, 7V ID, Drain Current(A) 25 VGS=6V 20 15 10 VGS=5V 5 1.2 1 0.8 ID=250μA, VGS=0V 0.6 0.4 0 0 2 4 6 8 VDS, Drain-Source Voltage(V) -75 -50 -25 10 Reverse Drain Current vs Source-Drain Voltage Static Drain-Source On-State resistance vs Drain Current 1000 VSD, Source-Drain Voltage(V) R DS(ON) , Static Drain-Source On-State Resistance(mΩ) 1.2 VGS=6V 100 VGS=10V 1 Tj=25°C 0.8 0.6 Tj=150°C 0.4 0.2 10 0.01 0.1 1 10 ID, Drain Current(A) 0 100 4 8 12 16 IDR , Reverse Drain Current(A) 20 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage 600 3 500 R DS(ON) , Normalized Static DrainSource On-State Resistance R DS(ON) , Static Drain-Source OnState Resistance(mΩ) 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) ID=9A 400 300 200 100 2.5 VGS=10V, ID=9A 2 1.5 1 0.5 RDS(ON) @Tj=25°C :156mΩ typ 0 0 0 MTE130N20H8 2 4 6 8 VGS, Gate-Source Voltage(V) 10 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) CYStek Product Specification Spec. No. : C966H8 Issued Date : 2015.03.23 Revised Date : Page No. : 5/ 9 CYStech Electronics Corp. Typical Characteristics(Cont.) NormalizedThreshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage VGS(th), Normalized Threshold Voltage Capacitance---(pF) 10000 Ciss 1000 C oss 100 Crss 1.4 1.2 ID=1mA 1 0.8 ID=250μA 0.6 0.4 10 0.1 1 10 VDS, Drain-Source Voltage(V) -75 -50 -25 100 Forward Transfer Admittance vs Drain Current Gate Charge Characteristics 10 GFS , Forward Transfer Admittance(S) 100 VGS, Gate-Source Voltage(V) VDS=100V 10 1 VDS=10V Pulsed Ta=25°C 0.1 0.01 0.001 8 VDS=40V 6 VDS=160V 4 2 ID=11A 0 0.01 0.1 1 ID, Drain Current(A) 10 0 100 4 8 12 16 Total Gate Charge---Qg(nC) 20 24 Maximum Drain Current vs Case Temperature Maximum Safe Operating Area 12 100μs RDS(ON) Limit 10 1ms 10ms 100ms 1 1s TC=25°C, Tj=150°, VGS=10V RθJC=2.5°C/W, Single Pulse ID, Maximum Drain Current(A) 100 ID, Drain Current(A) 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) 10 8 6 4 2 VGS=10V, RθJC=2.5°C/W DC 0 0.1 0.1 MTE130N20H8 1 10 100 VDS, Drain-Source Voltage(V) 1000 25 50 75 100 125 TC , Case Temperature(°C) 150 175 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C966H8 Issued Date : 2015.03.23 Revised Date : Page No. : 6/ 9 Typical Characteristics(Cont.) Typical Transfer Characteristics Single Pulse Maximum Power Dissipation 3000 30 2500 20 2000 Power (W) ID, Drain Current (A) VDS=10V 25 15 1500 10 1000 5 500 0 0 2 4 6 8 VGS, Gate-Source Voltage(V) 10 TJ(MAX) =150°C TC=25°C θ JC=2.5°C/W 0 0.0001 0.001 0.01 0.1 Pulse Width(s) 1 10 Transient Thermal Response Curves 1 r(t), Normalized Effective Transient Thermal Resistance D=0.5 0.2 0.1 1.RθJC(t)=r(t)*RθJC 2.Duty Factor, D=t1/t2 3.TJM-TC=PDM*Rθ JC(t) 4.RθJC=2.5 °C/W 0.1 0.05 0.02 0.01 0.01 Single Pulse 0.001 1.E-04 MTE130N20H8 1.E-03 1.E-02 1.E-01 1.E+00 t1, Square Wave Pulse Duration(s) 1.E+01 1.E+02 1.E+03 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C966H8 Issued Date : 2015.03.23 Revised Date : Page No. : 7/ 9 Reel Dimension Carrier Tape Dimension Pin #1 MTE130N20H8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C966H8 Issued Date : 2015.03.23 Revised Date : Page No. : 8/ 9 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTE130N20H8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C966H8 Issued Date : 2015.03.23 Revised Date : Page No. : 9/ 9 DFN5×6 Dimension Marking: Device Name Date Code E130 N20 8-L8-Lead ead power pakPlastic PlasticPackage Package DFN5×6 CYCYS StekPackage Package Code: Code : H8H8 Millimeters Min. Max. 0.80 1.00 0.00 0.05 0.35 0.49 0.254 REF 4.90 5.10 1.40 REF DIM A A1 b c D F Inches Min. Max. 0.031 0.039 0.000 0.002 0.014 0.019 0.010 REF 0.193 0.201 0.055 REF DIM E e H L1 G K Millimeters Min. Max. 5.70 5.90 1.27 BSC 5.95 6.20 0.10 0.18 0.60 REF 4.00 REF Inches Min. Max. 0.224 0.232 0.050 BSC 0.234 0.244 0.004 0.007 0.024 REF 0.157 REF Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTE130N20H8 CYStek Product Specification