NOT RECOMMENDED FOR NEW DESIGN USE DMP2065UFDB DMP2160UFDB DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance 70mΩ @VGS = -4.5V 85mΩ @VGS = -2.5V 86mΩ (Typ) @VGS = -1.8V Case: U-DFN2020-6 (Type B) Case Material: Molded Plastic, “Green” Molding Compound; UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Low Gate Threshold Voltage, -0.9V Max Terminal Connections: See Diagram Fast Switching Speed Low Input/Output Leakage Terminals: Finish – NiPdAu Annealed over Copper Leadframe; Solderable per MIL-STD-202, Method 208 e4 Low Profile, 0.5mm Max Height Weight: 0.0065 grams (Approximate) Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability An Automotive-Compliant Part is Available Under Separate Datasheet (DMP2160UFDBQ) U-DFN2020-6 (Type B) D2 D1 S2 G2 D2 D1 D1 G2 G1 D2 G1 S1 S2 S1 Pin1 Bottom View Equivalent Circuit Ordering Information (Note 4) Part Number DMP2160UFDB-7 DMP2160UFDB-7R Notes: Case U-DFN2020-6 (Type B) U-DFN2020-6 (Type B) Packaging 3,000/Tape & Reel 3,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. Marking Information U-DFN2020-6 (Type B) Date Code Key Year Code 2008 V 2009 W Month Code Jan 1 Feb 2 DMP2160UFDB Document number: DS31643 Rev. 10 - 3 ….. ….. Mar 3 2015 C Apr 4 YM P2 P2 = Marking Code YM = Date Marking Y = Year (ex: E = 2017) M = Month (ex: 9 = September) Dot Denotes Pin 1 2016 D May 5 2017 E Jun 6 1 of 7 www.diodes.com 2018 F Jul 7 Aug 8 2019 G Sep 9 2020 H Oct O 2021 I Nov N 2022 J Dec D December 2017 © Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN USE DMP2065UFDB DMP2160UFDB Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Drain-Source Voltage Gate-Source Voltage Drain Current (Note 5) Pulsed Drain Current (Note 6) Symbol VDSS VGSS ID IDM Value -20 ±12 -3.8 -13 Unit V V A A Value 1.4 89 -55 to +150 Unit W °C/W °C Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage (Note 7) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: Symbol PD RJA TJ, TSTG Symbol Min Typ Max Unit BVDSS IDSS — — — -1 ±100 ±800 V µA IGSS -20 — — — VGS(TH) -0.45 — -0.9 V RDS(ON) — — — 54 68 86 70 85 — mΩ VDS = VGS, ID = -250µA VGS = -4.5V, ID = -2.8A VGS = -2.5V, ID = -2.0A |Yfs| VSD — — 8 -0.7 — -1.2 S V VGS = -1.8V, ID = -1.0A VDS = -5V, ID = -2.8A VGS = 0V, IS = -1.6A Ciss Coss Crss Rg Qg Qgs Qgd — — — — — — — — — — — 536 68 59 34 6.5 0.8 1.4 11.51 12.09 55.34 27.54 — — — — — — — — — — — pF pF pF Ω nC nC nC ns ns ns ns tD(ON) tR tD(OFF) tF — nA Test Condition VGS = 0V, ID = -250µA VDS = -20V, VGS = 0V VGS = ±8V, VDS = 0V VGS = ±12V, VDS = 0V VDS = -10V, VGS = 0V f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VGS = -4.5V, VDD = -10V, ID = -1.5A VGEN = -4.5V, VDD = -10V, RL = 10Ω, RG = 6Ω 5. Device mounted on FR-4 PCB, on minimum recommended, 2oz Copper pad layout. 6. Repetitive rating, pulse width limited by junction temperature. 7. Short duration pulse test used to minimize self-heating effect. DMP2160UFDB Document number: DS31643 Rev. 10 - 3 2 of 7 www.diodes.com December 2017 © Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN USE DMP2065UFDB 10 DMP2160UFDB 10 VGS = -8.0V V DS = -5V VGS = -4.5V 8 )A ( T N E R 6 R U C N IA R 4 D ,D -I VGS = -2.5V -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) 8 VGS = -2.0V 6 VGS = -1.5V 4 1 2 3 4 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics TA = -55°C ) ( E C N A T S IS E R -N O E C R U O S -N I A R D , )N 0.1 0.06 VGS = -2.5V VGS = -4.5V 0.04 0.02 O (S D R 0 0 1 2 3 4 5 6 7 -ID, DRAIN CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 8 1.4 VGS = -2.5V ID = -2A VGS = -4.5V ID = -5A 1.0 0.8 0.6 -50 -25 0 25 50 75 100 125 150 C)) TJ, JUNCTION TEMPERATURE (° (癈 Fig. 5 On-Resistance Variation with Temperature DMP2160UFDB Document number: DS31643 Rev. 10 - 3 2 0.14 0.12 0.1 TA = 150°C TA = 125°C 0.08 TA = 85°C 0.06 TA = 25°C 0.04 TA = -55°C 0.02 0 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 1.6 1.2 1 1.5 -VGS, GATE SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics 0.12 VGS = -1.8V 0 0.5 5 0.14 0.08 TA = 85°C TA = 25°C RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0 TA = 125°C VGS = -1.2V VGS = -1.0V 0 R DS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) TA = 150°C 2 2 3 of 7 www.diodes.com 1 2 3 4 5 6 7 -ID, DRAIN CURRENT (A) Fig. 4 Typical Drain-Source On-Resistance vs. Drain Current and Temperature 8 0.11 0.09 VGS = -2.5V ID = -2A 0.07 VGS = -4.5V ID = -5A 0.05 0.03 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (° (癈 C)) Fig. 6 On-Resistance Variation with Temperature December 2017 © Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN USE DMP2065UFDB 10,000 1 )V ( E G A T L O V D L O H S E R H T E T A G , )H -VGS(TH), GATE THRESHOLD VOLTAGE (V) f = 1MHz C, CAPACITANCE (pF) 1,000 Ciss 100 Coss Crss 0.9 0.8 0.7 0.6 ID = -250µA 0.4 0.3 V - 0.2 -50 10 0 4 8 12 16 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 7 Typical Capacitance ID = -1mA 0.5 T ( S G -25 0 25 50 75 100 125 150 TA , AMBIENT TEMPERATURE (°C) Fig. 8 Gate Threshold Variation vs. Ambient Temperature 20 10 10,000 )A n ( 1,000 T N E R R U C 100 E G A K A E L ,S 10 S D -I 8 6 TA = 150°C -IDSS, LEAKAGE CURRENT (nA) -IS, SOURCE CURRENT (A) DMP2160UFDB = 25癈 TA =TA25° C 25 4 2 0 TA = 125°C TA = 85°C TA = 25°C 1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 -V SD, SOURCE-DRAIN VOLTAGE (V) Fig. 9 Diode Forward Voltage vs. Current 0 4 8 12 16 20 -VDS , DRAIN-SOURCE VOLTAGE (V) Fig. 10 Typical Drain-Source Leakage Current vs. Voltage 10 VDS = -10V -VGS, GATE-SOURCE VOLTAGE (V) 9 I D = -1.5A 8 7 6 5 4 3 2 1 0 0 5 10 15 Q g, TOTAL GATE CHARGE (nC) Figure 11 Gate-Charge Characteristics DMP2160UFDB Document number: DS31643 Rev. 10 - 3 4 of 7 www.diodes.com December 2017 © Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN USE DMP2065UFDB DMP2160UFDB r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.9 D = 0.1 D = 0.05 R JA = r(t) R JA RθJA (t)(t) = r(t) * R*θJA RθJAR= 146℃/W = 146°C/W D = 0.02 0.01 JA P(pk) D = 0.01 t1 t2 * θJA RJA(t)(t) TTJ J- T- ATA= =P P *R D = 0.005 Duty Cycle, D = t1 /t2 D = Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t 1, PULSE DURATION TIME (s) 10 100 1,000 Fig. 12 Transient Thermal Response DMP2160UFDB Document number: DS31643 Rev. 10 - 3 5 of 7 www.diodes.com December 2017 © Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN USE DMP2065UFDB DMP2160UFDB Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. U-DFN2020-6 (Type B) A A3 A1 Seating Plane D D2 R0.1 (Pin E D2 50 #1 ID ) z1 E2 z1 k L z U-DFN2020-6 (Type B) Dim Min Max Typ A 0.545 0.605 0.575 A1 0.00 0.05 0.02 A3 0.13 b 0.20 0.30 0.25 D 1.95 2.075 2.00 D2 0.50 0.70 0.60 e 0.65 E 1.95 2.075 2.00 E2 0.90 1.10 1.00 k 0.45 L 0.25 0.35 0.30 z 0.225 z1 0.175 All Dimensions in mm e b Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. U-DFN2020-6 (Type B) X2 C Dimensions X1(2x) Y2 Y1(2x) G G1 C G G1 X X1 X2 Y Y1 Y2 Value (in mm) 0.650 0.150 0.450 0.350 0.600 1.650 0.500 1.000 2.300 Y X DMP2160UFDB Document number: DS31643 Rev. 10 - 3 6 of 7 www.diodes.com December 2017 © Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN USE DMP2065UFDB DMP2160UFDB IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2017, Diodes Incorporated www.diodes.com DMP2160UFDB Document number: DS31643 Rev. 10 - 3 7 of 7 www.diodes.com December 2017 © Diodes Incorporated