Freescale ATC100B330JT500XT Rf power field effect transistor Datasheet

Freescale Semiconductor
Technical Data
Document Number: MRF6VP11KH
Rev. 7, 4/2010
RF Power Field Effect Transistor
N--Channel Enhancement--Mode Lateral MOSFET
MRF6VP11KHR6
Designed primarily for pulsed wideband applications with frequencies up to
150 MHz. Device is unmatched and is suitable for use in industrial, medical
and scientific applications.
• Typical Pulsed Performance at 130 MHz: VDD = 50 Volts, IDQ = 150 mA,
Pout = 1000 Watts Peak (200 W Avg.), Pulse Width = 100 μsec,
Duty Cycle = 20%
Power Gain — 26 dB
Drain Efficiency — 71%
• Capable of Handling 10:1 VSWR, @ 50 Vdc, 130 MHz, 1000 Watts Peak
Power
Features
• Characterized with Series Equivalent Large--Signal Impedance Parameters
• CW Operation Capability with Adequate Cooling
• Qualified Up to a Maximum of 50 VDD Operation
• Integrated ESD Protection
• Designed for Push--Pull Operation
• Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
• RoHS Compliant
• In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
1.8--150 MHz, 1000 W, 50 V
LATERAL N--CHANNEL
BROADBAND
RF POWER MOSFET
CASE 375D--05, STYLE 1
NI--1230
PART IS PUSH--PULL
RFinA/VGSA 3
1 RFoutA/VDSA
RFinB/VGSB 4
2 RFoutB/VDSB
(Top View)
Figure 1. Pin Connections
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +110
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Storage Temperature Range
Tstg
-- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature (1,2)
TJ
225
°C
Symbol
Value (2,3)
Unit
ZθJC
RθJC
0.03
0.13
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 1000 W Pulsed, 100 μsec Pulse Width, 20% Duty Cycle
Case Temperature 67°C, 1000 W CW, 100 MHz
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
© Freescale Semiconductor, Inc., 2008--2010. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF6VP11KHR6
1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2 (Minimum)
Machine Model (per EIA/JESD22--A115)
A (Minimum)
Charge Device Model (per JESD22--C101)
IV (Minimum)
Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
IGSS
—
—
10
μAdc
V(BR)DSS
110
—
—
Vdc
Zero Gate Voltage Drain Leakage Current
(VDS = 50 Vdc, VGS = 0 Vdc)
IDSS
—
—
100
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 100 Vdc, VGS = 0 Vdc)
IDSS
—
—
5
mA
Gate Threshold Voltage (1)
(VDS = 10 Vdc, ID = 1600 μAdc)
VGS(th)
1
1.63
3
Vdc
Gate Quiescent Voltage (2)
(VDD = 50 Vdc, ID = 150 mAdc, Measured in Functional Test)
VGS(Q)
1.5
2.2
3.5
Vdc
Drain--Source On--Voltage (1)
(VGS = 10 Vdc, ID = 4 Adc)
VDS(on)
—
0.28
—
Vdc
Reverse Transfer Capacitance
(VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
3.3
—
pF
Output Capacitance
(VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
147
—
pF
Input Capacitance
(VDS = 50 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
Ciss
—
506
—
pF
Characteristic
Off Characteristics
(1)
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
Drain--Source Breakdown Voltage
(ID = 300 mA, VGS = 0 Vdc)
On Characteristics
Dynamic Characteristics (1)
Functional Tests (2) (In Freescale Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 150 mA, Pout = 1000 W Peak (200 W Avg.), f = 130 MHz,
100 μsec Pulse Width, 20% Duty Cycle
Power Gain
Gps
24
26
28
dB
Drain Efficiency
ηD
69
71
—
%
Input Return Loss
IRL
—
--16
--9
dB
1. Each side of device measured separately.
2. Measurement made with device in push--pull configuration.
MRF6VP11KHR6
2
RF Device Data
Freescale Semiconductor
VBIAS
B1
+
+
+
C1
C2
C3
L1
R2
R1
C4
C5
C6
C7
C8
C9
Z4
Z1
+
L3
C10
C11
C13
Z8
RF
INPUT
VSUPPLY
Z5
C12
Z14
C16 C17 C18 C19
C20
Z16
Z18
DUT
J1
L2
Z12
C15
+
Z6
Z3
Z2
C21
Z10
C14
+
C23
C24
C25
J2
Z7
Z9
Z11
Z13
Z15
C26
Z17
T1
Z19
RF
OUTPUT
T2
C22
Z1
Z2*
Z3*
Z4, Z5
Z6, Z7, Z8, Z9
Z10, Z11
Z12, Z13
0.175″ x 0.082″ Microstrip
1.461″ x 0.082″ Microstrip
0.080″ x 0.082″ Microstrip
0.133″ x 0.193″ Microstrip
0.500″ x 0.518″ Microstrip
0.102″ x 0.253″ Microstrip
0.206″ x 0.253″ Microstrip
Z14, Z15
Z16*, Z17*
Z18
Z19
PCB
0.116″ x 0.253″ Microstrip
0.035″ x 0.253″ Microstrip
0.275″ x 0.082″ Microstrip
0.845″ x 0.082″ Microstrip
Arlon CuClad 250GX--0300--55--22, 0.030″, εr = 2.55
*Line length includes microstrip bends.
Figure 2. MRF6VP11KHR6 Test Circuit Schematic
Table 5. MRF6VP11KHR6 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1
95 Ω, 100 MHz Long Ferrite Bead
2743021447
Fair--Rite
C1
47 μF, 50 V Electrolytic Capacitor
476KXM050M
Illinois Cap
C2
22 μF, 35 V Tantalum Capacitor
T491X226K035AT
Kemet
C3
10 μF, 35 V Tantalum Capacitor
T491D106K035AT
Kemet
C4, C9, C17
10K pF Chip Capacitors
ATC200B103KT50XT
ATC
C5, C16
20K pF Chip Capacitors
ATC200B203KT50XT
ATC
C6, C15
0.1 μF, 50 V Chip Capacitors
CDR33BX104AKYS
Kemet
C7
2.2 μF, 50 V Chip Capacitor
C1825C225J5RAC
Kemet
C8
0.22 μF, 100 V Chip Capacitor
C1825C223K1GAC
Kemet
C10, C11, C13, C14
1000 pF Chip Capacitors
ATC100B102JT50XT
ATC
C12
18 pF Chip Capacitor
ATC100B180JT500XT
ATC
C18, C19, C20
470 μF, 63 V Electrolytic Capacitors
MCGPR63V477M13X26--RH
Multicomp
C21, C22
47 pF Chip Capacitors
ATC100B470JT500XT
ATC
C23
75 pF Chip Capacitor
ATC100B750JT500XT
ATC
C24, C25
100 pF Chip Capacitors
ATC100B101JT500XT
ATC
C26
33 pF Chip Capacitor
ATC100B330JT500XT
ATC
J1, J2
Jumpers from PCB to T1 and T2
Copper Foil
L1
82 nH Inductor
1812SMS--82NJLC
CoilCraft
L2
47 nH Inductor
1812SMS--47NJLC
CoilCraft
L3*
10 Turn, #18 AWG Inductor, Hand Wound
Copper Wire
R1
1 KΩ, 1/4 W Carbon Leaded Resistor
MCCFR0W4J0102A50
Multicomp
R2
20 Ω, 3 W Chip Resistor
CPF320R000FKE14
Vishay
T1
Balun
TUI--9
Comm Concepts
T2
Balun
TUO--4
Comm Concepts
*L3 is wrapped around R2.
MRF6VP11KHR6
RF Device Data
Freescale Semiconductor
3
C1
C19
C2 C3
C17
C16
C15
C4
C5
C6
B1
C20
L1
C14
C7
C8
C9
C18
R1
C10
C11
C13
C21
T1
L3, R2*
T2
C24
C25
L2
C12
CUT OUT AREA
J1
J2
C23
C22
C26
MRF6VP11KH
Rev. 3
* L3 is wrapped around R2.
Figure 3. MRF6VP11KHR6 Test Circuit Component Layout
MRF6VP11KHR6
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
100
Ciss
ID, DRAIN CURRENT (AMPS)
C, CAPACITANCE (pF)
1000
Coss
100
Measured with ±30 mV(rms)ac @ 1 MHz
VGS = 0 Vdc
Crss
10
0
10
20
30
40
10
TC = 25°C
1
50
TJ = 175°C
TJ = 150°C
1
1
100
10
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Note: Each side of device measured separately.
Note: Each side of device measured separately.
Figure 4. Capacitance versus Drain--Source Voltage
Figure 5. DC Safe Operating Area
80
26
70
Gps
25
60
24
50
23
40
ηD
22
30
21
20
VDD = 50 Vdc, IDQ = 150 mA, f = 130 MHz
Pulse Width = 100 μsec, Duty Cycle = 20%
20
10
100
1000
65
63
62
P1dB = 60.57 dBm (1140.24 W)
61
Actual
60
59
58
VDD = 50 Vdc, IDQ = 150 mA, f = 130 MHz
Pulse Width = 100 μsec, Duty Cycle = 20%
57
10
2000
Ideal
P3dB = 61.23 dBm (1327.39 W)
64
Pout, OUTPUT POWER (dBm)
27
ηD, DRAIN EFFICIENCY (%)
Gps, POWER GAIN (dB)
TJ = 200°C
56
30
31
32
33
34
35
36
37
38
Pout, OUTPUT POWER (WATTS) PULSED
Pin, INPUT POWER (dBm) PULSED
Figure 6. Pulsed Power Gain and Drain Efficiency
versus Output Power
Figure 7. Pulsed Output Power versus
Input Power
39
28
32
28
Gps, POWER GAIN (dB)
Gps, POWER GAIN (dB)
IDQ = 6000 mA
3600 mA
1500 mA
750 mA
375 mA
24
150 mA
20
24
20
VDD = 30 V
40 V
35 V
16
100
10
1000
2000
12
50 V
IDQ = 150 mA, f = 130 MHz
Pulse Width = 100 μsec
Duty Cycle = 20%
VDD = 50 Vdc, f = 130 MHz
Pulse Width = 100 μsec, Duty Cycle = 20%
16
45 V
0
200
400
600
800
1000
1200
1400
Pout, OUTPUT POWER (WATTS) PULSED
Pout, OUTPUT POWER (WATTS) PULSED
Figure 8. Pulsed Power Gain versus
Output Power
Figure 9. Pulsed Power Gain versus
Output Power
1600
MRF6VP11KHR6
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS
Gps, POWER GAIN (dB)
Pout, OUTPUT POWER (dBm)
25_C
85_C
55
VDD = 50 Vdc
IDQ = 150 mA
f = 130 MHz
Pulse Width = 100 μsec
Duty Cycle = 20%
50
45
20
30
25
70
26
TC = --30_C
60
80
TC = --30_C
40
35
25_C
25
50
24
Gps
23
40
ηD
22
21
20
10
45
60
85_C
VDD = 50 Vdc
IDQ = 150 mA
f = 130 MHz
Pulse Width = 100 μsec
Duty Cycle = 20%
1000
100
30
ηD, DRAIN EFFICIENCY (%)
27
65
20
10
2000
Pin, INPUT POWER (dBm) PULSED
Pout, OUTPUT POWER (WATTS) PULSED
Figure 10. Pulsed Output Power versus
Input Power
Figure 11. Pulsed Power Gain and Drain Efficiency
versus Output Power
0.2
ZJC, THERMAL IMPEDANCE (°C/W)
0.18
0.16
D = 0.7
0.14
0.12
D = 0.5
0.1
PD
0.08
0.04
D = Duty Factor = t1/t2
t1 = Pulse Width
t2 = Pulse Period
TJ = PD * ZJC + TC
D = 0.1
0.02
0
0.00001
t1
t2
0.06
0.0001
0.001
0.01
1
0.1
10
RECTANGULAR PULSE WIDTH (S)
108
109
107
108
MTTF (HOURS)
MTTF (HOURS)
Figure 12. Maximum Transient Thermal Impedance
106
105
106
90
110
130
150
170
190
210
230
250
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device
is operated at VDD = 50 Vdc, Pout = 1000 W CW, and ηD = 72%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 13. MTTF versus Junction Temperature -- CW
MRF6VP11KHR6
6
107
90
110
130
150
170
190
210
230
250
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device
is operated at VDD = 50 Vdc, Pout = 1000 W Peak, Pulse Width = 100 μsec,
Duty Cycle = 20%, and ηD = 71%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 14. MTTF versus Junction Temperature -- Pulsed
RF Device Data
Freescale Semiconductor
f = 130 MHz
Zsource
Zo = 10 Ω
f = 130 MHz
Zload
VDD = 50 Vdc, IDQ = 150 mA, Pout = 1000 W Peak
f
MHz
Zsource
Ω
Zload
Ω
130
1.58 + j6.47
4.6 + j1.85
Zsource = Test circuit impedance as measured from
gate to gate, balanced configuration.
Zload
= Test circuit impedance as measured from
drain to drain, balanced configuration.
Input
Matching
Network
+
Device
Under
Test
--
-Z
source
Output
Matching
Network
+
Z
load
Figure 15. Series Equivalent Source and Load Impedance
MRF6VP11KHR6
RF Device Data
Freescale Semiconductor
7
PACKAGE DIMENSIONS
MRF6VP11KHR6
8
RF Device Data
Freescale Semiconductor
MRF6VP11KHR6
RF Device Data
Freescale Semiconductor
9
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
• Electromigration MTTF Calculator
• RF High Power Model
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software &
Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Jan. 2008
• Initial Release of Data Sheet
1
Apr. 2008
• Corrected description and part number for the R1 resistor and updated R2 resistor to latest RoHS
compliant part number in Table 5, Test Circuit Component Designations and Values, p. 3.
• Added Fig. 12, Maximum Transient Thermal Impedance, p. 6
2
July 2008
• Added MTTF CW graph, Fig. 13, MTTF versus Junction Temperature, p. 6
3
Sept. 2008
• Added Note to Fig. 4, Capacitance versus Drain--Source Voltage, to denote that each side of device is
measured separately, p. 5
• Updated Fig. 5, DC Safe Operating Area, to clarify that measurement is on a per--side basis, p. 5
• Corrected Fig. 13, MTTF versus Junction Temperature – CW, to reflect the correct die size and increased
the MTTF factor accordingly, p. 6
• Corrected Fig. 14, MTTF versus Junction Temperature – Pulsed, to reflect the correct die size and
increased the MTTF factor accordingly, p. 6
4
Dec. 2008
• Fig. 15, Series Equivalent Source and Load Impedance, corrected Zsource copy to read “Test circuit
impedance as measured from gate to gate, balanced configuration” and Zload copy to read “Test circuit
impedance as measured from drain to drain, balanced configuration”, p. 7
5
July 2009
• Added 1000 W CW thermal data at 100 MHz to Thermal Characteristics table, p. 1
• Changed “EKME630ELL471MK25S” part number to “MCGPR63V477M13X26--RH”, changed R1
Description from “1 KΩ, 1/4 W Axial Leaded Resistor” to “1 KΩ, 1/4 W Carbon Leaded Resistor” and
“CMF601000R0FKEK” part number to “MCCFR0W4J0102A50”, Table 5, Test Circuit Component
Designations and Values, p. 3
• Corrected Fig. 13, MTTF versus Junction Temperature – CW, to reflect change in Drain Efficiency from
70% to 72%, p. 6
• Added Electromigration MTTF Calculator and RF High Power Model availability to Product Documentation,
Tools and Software, p. 20
6
Dec. 2009
• Device frequency range improved from 10--150 MHz to 1.8--150 MHz, p. 1
• Reporting of pulsed thermal data now shown using the ZθJC symbol, Table 2. Thermal Characteristics, p. 1
7
Apr. 2010
• Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related
“Continuous use at maximum temperature will affect MTTF” footnote added, p. 1
MRF6VP11KHR6
10
RF Device Data
Freescale Semiconductor
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MRF6VP11KHR6
Document
Number:
RF
Device
Data MRF6VP11KH
Rev. 7, 4/2010
Freescale
Semiconductor
11
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