DMN5L06 NEW PRODUCT Lead-free Green SINGLE N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features · · · · · · · · · Single N-Channel MOSFET Low On-Resistance SOT-23 Very Low Gate Threshold Voltage A Low Input Capacitance Dim Min Max A 0.37 0.51 B 1.20 1.40 C 2.30 2.50 D 0.89 1.03 E 0.45 0.60 G 1.78 2.05 H 2.80 3.00 J 0.013 0.10 K 0.903 1.10 D Fast Switching Speed Low Input/Output Leakage B Ultra-Small Surface Mount Package C G TOP VIEW S Lead Free By Design/RoHS Compliant (Note 2) D E G “Green” Device (Note 3) H K Mechanical Data M J L · · Case: SOT-23 L 0.45 0.61 · · · Moisture Sensitivity: Level 1 per J-STD-020C M 0.085 0.180 Terminals Connections: See Diagram a 0° 8° · · · Marking: Date Code and Type Code, See Page 2 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Drain Terminals: Finish ¾ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 All Dimensions in mm Gate Ordering & Date Code Information: See Page 2 Source Weight: 0.008 grams (approximate) Maximum Ratings @ TA = 25°C unless otherwise specified Symbol Value Units Drain-Source Voltage Characteristic VDSS 50 V Drain-Gate Voltage RGS £ 1.0MW VDGR 50 V Gate-Source Voltage Continuous Pulsed VGSS ±20 ±40 V Drain Current (Note 1) Continuous ID 280 mA Drain Current (Note 1) Pulsed IDM 1.5 A Pd 350 mW RqJA 357 °C/W Tj, TSTG -55 to +150 °C Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage Temperature Range Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead. 3. Diodes Inc’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. DS30614 Rev. 3 - 2 1 of 4 www.diodes.com DMN5L06 ã Diodes Incorporated @ TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition BVDSS 50 ¾ ¾ V VGS = 0V, ID = 10mA IDSS ¾ ¾ 0.1 500 µA VDS = 50V, VGS = 0V IGSS ¾ ¾ ±20 nA VGS = ±20V, VDS = 0V VGS(th) 0.49 ¾ 1.2 V VDS = VGS, ID = 250mA RDS (ON) ¾ ¾ 1.6 2.2 3 4 W VGS = 2.7V, ID = 0.2A, VGS = 1.8V, ID = 50mA ID(ON) 0.5 1.0 ¾ A VGS = 10V, VDS = 7.5V Forward Transconductance gFS 200 ¾ ¾ mS Source-Drain Diode Forward Voltage VSD 0.5 ¾ 1.4 V Input Capacitance Ciss ¾ ¾ 50 pF Output Capacitance Coss ¾ ¾ 25 pF Reverse Transfer Capacitance Crss ¾ ¾ 5.0 pF OFF CHARACTERISTICS (Note 4) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current @ TC = 25°C @ TC = 125°C Gate-Body Leakage ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Static Drain-Source On-Resistance On-State Drain Current VDS =10V, ID = 0.2A VGS = 0V, IS = 115mA DYNAMIC CHARACTERISTICS VDS = 25V, VGS = 0V f = 1.0MHz 1 1.5 VGS = 10V 8V 6V 5V 4V 3V VDS = 10V Pulsed 8V 10V 6V 5V ID, DRAIN CURRENT (A) 1.2 ID, DRAIN CURRENT (A) NEW PRODUCT Electrical Characteristics 4V 0.9 3V 0.6 0.1 TA = 150° C TA = 125° C TA = 85° C TA = 25° C 0.01 TA = 0° C 0.3 TA = -25° C TA = -55° C 0.001 0 0 1 2 3 4 5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics DS30614 Rev. 3 - 2 0 0.5 1 1.5 2 2.5 3 3.5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics 2 of 4 www.diodes.com DMN5L06 10 VDS = 10V VGS(th), GATE THRESHOLD VOLTAGE (V) VGS = 10V Pulsed ID = 1mA 0.7 Pulsed TA = 85° C TA = 125° C 0.6 TA = 150° C 0.5 0.4 1 0.3 TA = -55° C TA = 25° C 0.2 TA = 0° C TA = -25° C 0.1 0 -75 -50 -25 25 0 50 75 0.1 0.001 100 125 150 Tch, CHANNEL TEMPERATURE (°C) Fig. 3 Gate Threshold Voltage vs. Channel Temperature 0.1 0.01 ID, DRAIN CURRENT (A) Fig. 4 Static Drain-Source On-Resistance Vs. Drain Current 1 8 10 VGS = 5V Pulsed TA = 25° C Pulsed 7 TA = 85° C TA = 125° C 6 TA = 150° C 5 4 1 TA = -55° C TA = 25° C TA = 0° C 3 TA = -25° C 2 ID = 280mA 1 ID = 140mA 0 0.1 1 0.1 0.01 0.001 5 0 10 15 20 VGS, GATE SOURCE VOLTAGE (V) Fig. 6 Static Drain-Source On-Resistance vs. Gate-Source Voltage ID, DRAIN CURRENT (A) Fig. 5 Static Drain-Source On-Resistance vs. Drain Current 1 2.5 VGS = 0V Pulsed VGS = 10V Pulsed 2.3 2.1 1.9 ID = 280mA 1.7 ID = 140mA 1.5 1.3 1.1 0.9 IDR, REVERSE DRAIN CURRENT (A) NEW PRODUCT 0.8 TA = 150° C 0.1 TA = 125° C TA = 85° C 0.01 TA = 25° C TA = -25° C 0.7 TA = -55° C 0.5 0.001 -50 -25 0 25 50 75 100 125 150 Tch, CHANNEL TEMPERATURE (° C) Fig. 7 Static Drain-Source On-State Resistance vs. Channel Temperature DS30614 Rev. 3 - 2 3 of 4 www.diodes.com 0 0.5 1 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Reverse Drain Current vs. Source-Drain Voltage DMN5L06 |Yfs|, FORWARD TRANSFER ADMITTANCE (S) IDR, REVERSE DRAIN CURRENT (A) NEW PRODUCT 1 VGS = 10V 0.1 VGS = 0V 0.01 TA = 25°C Pulsed 0.001 0.5 0 1 1 TA = -25° C TA = 0° C 0.1 TA = 25° C TA = 85° C TA = 125° C TA = 150° C 0.01 0.01 0.001 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 9 Reverse Drain Current vs. Source-Drain Voltage 1 0.1 ID, DRAIN CURRENT (A) Fig.10 Forward Transfer Admittance vs. Drain Current 500 Pd, POWER DISSIPATION (mW) TA = -55° C VDS = 10V Pulsed 400 300 200 100 0 0 -50 50 100 150 TA, AMBIENT TEMPERATURE (° C) Fig. 11, Derating Curve - Total Ordering Information Notes: (Note 5) Device Packaging Shipping DMN5L06-7 SOT-23 3000/Tape & Reel 4. Short duration test pulse used to minimize self-heating effect. 5. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. K5L YM Marking Information K5L = DMN5L06 Product Type Marking Code YM = Date Code Marking Y = Year ex: S = 2005 M = Month ex: 9 = September Date Code Key Year 2005 2006 2007 2008 2009 Code S T U V W Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D DS30614 Rev. 3 - 2 4 of 4 www.diodes.com DMN5L06