Diodes DMN5L06 Single n-channel enhancement mode field effect transistor Datasheet

DMN5L06
NEW PRODUCT
Lead-free Green
SINGLE N-CHANNEL ENHANCEMENT
MODE FIELD EFFECT TRANSISTOR
Features
·
·
·
·
·
·
·
·
·
Single N-Channel MOSFET
Low On-Resistance
SOT-23
Very Low Gate Threshold Voltage
A
Low Input Capacitance
Dim
Min
Max
A
0.37
0.51
B
1.20
1.40
C
2.30
2.50
D
0.89
1.03
E
0.45
0.60
G
1.78
2.05
H
2.80
3.00
J
0.013
0.10
K
0.903
1.10
D
Fast Switching Speed
Low Input/Output Leakage
B
Ultra-Small Surface Mount Package
C
G TOP VIEW S
Lead Free By Design/RoHS Compliant (Note 2)
D
E
G
“Green” Device (Note 3)
H
K
Mechanical Data
M
J
L
·
·
Case: SOT-23
L
0.45
0.61
·
·
·
Moisture Sensitivity: Level 1 per J-STD-020C
M
0.085
0.180
Terminals Connections: See Diagram
a
0°
8°
·
·
·
Marking: Date Code and Type Code, See Page 2
Case Material: Molded Plastic, "Green" Molding
Compound. UL Flammability Classification Rating 94V-0
Drain
Terminals: Finish ¾ Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
All Dimensions in mm
Gate
Ordering & Date Code Information: See Page 2
Source
Weight: 0.008 grams (approximate)
Maximum Ratings
@ TA = 25°C unless otherwise specified
Symbol
Value
Units
Drain-Source Voltage
Characteristic
VDSS
50
V
Drain-Gate Voltage RGS £ 1.0MW
VDGR
50
V
Gate-Source Voltage
Continuous
Pulsed
VGSS
±20
±40
V
Drain Current (Note 1)
Continuous
ID
280
mA
Drain Current (Note 1)
Pulsed
IDM
1.5
A
Pd
350
mW
RqJA
357
°C/W
Tj, TSTG
-55 to +150
°C
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
3. Diodes Inc’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
DS30614 Rev. 3 - 2
1 of 4
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DMN5L06
ã Diodes Incorporated
@ TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
BVDSS
50
¾
¾
V
VGS = 0V, ID = 10mA
IDSS
¾
¾
0.1
500
µA
VDS = 50V, VGS = 0V
IGSS
¾
¾
±20
nA
VGS = ±20V, VDS = 0V
VGS(th)
0.49
¾
1.2
V
VDS = VGS, ID = 250mA
RDS (ON)
¾
¾
1.6
2.2
3
4
W
VGS = 2.7V, ID = 0.2A,
VGS = 1.8V, ID = 50mA
ID(ON)
0.5
1.0
¾
A
VGS = 10V, VDS = 7.5V
Forward Transconductance
gFS
200
¾
¾
mS
Source-Drain Diode Forward Voltage
VSD
0.5
¾
1.4
V
Input Capacitance
Ciss
¾
¾
50
pF
Output Capacitance
Coss
¾
¾
25
pF
Reverse Transfer Capacitance
Crss
¾
¾
5.0
pF
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
@ TC = 25°C
@ TC = 125°C
Gate-Body Leakage
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Static Drain-Source On-Resistance
On-State Drain Current
VDS =10V, ID = 0.2A
VGS = 0V, IS = 115mA
DYNAMIC CHARACTERISTICS
VDS = 25V, VGS = 0V
f = 1.0MHz
1
1.5
VGS = 10V
8V
6V
5V
4V
3V
VDS = 10V
Pulsed
8V
10V
6V
5V
ID, DRAIN CURRENT (A)
1.2
ID, DRAIN CURRENT (A)
NEW PRODUCT
Electrical Characteristics
4V
0.9
3V
0.6
0.1
TA = 150° C
TA = 125° C
TA = 85° C
TA = 25° C
0.01
TA = 0° C
0.3
TA = -25° C
TA = -55° C
0.001
0
0
1
2
3
4
5
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
DS30614 Rev. 3 - 2
0
0.5
1
1.5
2
2.5
3
3.5
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
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DMN5L06
10
VDS = 10V
VGS(th), GATE THRESHOLD VOLTAGE (V)
VGS = 10V
Pulsed
ID = 1mA
0.7
Pulsed
TA = 85° C
TA = 125° C
0.6
TA = 150° C
0.5
0.4
1
0.3
TA = -55° C
TA = 25° C
0.2
TA = 0° C
TA = -25° C
0.1
0
-75 -50
-25
25
0
50
75
0.1
0.001
100 125 150
Tch, CHANNEL TEMPERATURE (°C)
Fig. 3 Gate Threshold Voltage
vs. Channel Temperature
0.1
0.01
ID, DRAIN CURRENT (A)
Fig. 4 Static Drain-Source On-Resistance
Vs. Drain Current
1
8
10
VGS = 5V
Pulsed
TA = 25° C
Pulsed
7
TA = 85° C
TA = 125° C
6
TA = 150° C
5
4
1
TA = -55° C
TA = 25° C
TA = 0° C
3
TA = -25° C
2
ID = 280mA
1
ID = 140mA
0
0.1
1
0.1
0.01
0.001
5
0
10
15
20
VGS, GATE SOURCE VOLTAGE (V)
Fig. 6 Static Drain-Source On-Resistance
vs. Gate-Source Voltage
ID, DRAIN CURRENT (A)
Fig. 5 Static Drain-Source On-Resistance
vs. Drain Current
1
2.5
VGS = 0V
Pulsed
VGS = 10V
Pulsed
2.3
2.1
1.9
ID = 280mA
1.7
ID = 140mA
1.5
1.3
1.1
0.9
IDR, REVERSE DRAIN CURRENT (A)
NEW PRODUCT
0.8
TA = 150° C
0.1
TA = 125° C
TA = 85° C
0.01
TA = 25° C
TA = -25° C
0.7
TA = -55° C
0.5
0.001
-50
-25
0
25
50
75
100
125 150
Tch, CHANNEL TEMPERATURE (° C)
Fig. 7 Static Drain-Source On-State Resistance
vs. Channel Temperature
DS30614 Rev. 3 - 2
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0
0.5
1
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Reverse Drain Current
vs. Source-Drain Voltage
DMN5L06
|Yfs|, FORWARD TRANSFER ADMITTANCE (S)
IDR, REVERSE DRAIN CURRENT (A)
NEW PRODUCT
1
VGS = 10V
0.1
VGS = 0V
0.01
TA = 25°C
Pulsed
0.001
0.5
0
1
1
TA = -25° C
TA = 0° C
0.1
TA = 25° C
TA = 85° C
TA = 125° C
TA = 150° C
0.01
0.01
0.001
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 9 Reverse Drain Current
vs. Source-Drain Voltage
1
0.1
ID, DRAIN CURRENT (A)
Fig.10 Forward Transfer Admittance
vs. Drain Current
500
Pd, POWER DISSIPATION (mW)
TA = -55° C
VDS = 10V
Pulsed
400
300
200
100
0
0
-50
50
100
150
TA, AMBIENT TEMPERATURE (° C)
Fig. 11, Derating Curve - Total
Ordering Information
Notes:
(Note 5)
Device
Packaging
Shipping
DMN5L06-7
SOT-23
3000/Tape & Reel
4. Short duration test pulse used to minimize self-heating effect.
5. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
K5L
YM
Marking Information
K5L = DMN5L06 Product Type Marking Code
YM = Date Code Marking
Y = Year ex: S = 2005
M = Month ex: 9 = September
Date Code Key
Year
2005
2006
2007
2008
2009
Code
S
T
U
V
W
Month
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
DS30614 Rev. 3 - 2
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DMN5L06
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