BILIN BC856W Pnp silicon epitaxial planar transistor Datasheet

Production specification
PNP Silicon Epitaxial Planar Transistor
BC856W/BC857W/BC858W
FEATURES
Pb
z
For AF input stages and driver applications.
z
High current gain.
z
Low collector-emitter saturation voltage.
z
Low noise between 30Hz and 15 kHz.
z
Complementary types:BC846W,BC847W,BC848W.
Lead-free
APPLICATIONS
z
General purpose switching and amplification application.
SOT-323
ORDERING INFORMATION
Type No.
Marking
Package Code
BC856W
BC857W
BC858W
3A/3B
3E/3F/3G
3J/3K/3L
SOT-323
SOT-323
SOT-323
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Value
Units
BC856W
BC857W
BC858W
-80
-50
-30
V
BC856W
BC857W
BC858W
-65
-45
-30
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current -Continuous
-100
mA
ICM
Peak Collector current
-200
mA
IBM
Peak Base current
-200
mA
PC
Collector Dissipation
200
mW
Tj,Tstg
Junction and Storage Temperature
-65 to +150
℃
F046
Rev.A
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1
Production specification
PNP Silicon Epitaxial Planar Transistor
BC856W/BC857W/BC858W
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Collector-base breakdown
voltage
Symbol
Test conditions
IC=-10μA,IE=0
V(BR)CBO
IC=-10mA,IB=0
MIN
TYP
MAX
UNIT
BC856W
BC857W
BC858W
-80
-50
-30
V
BC856W
BC857W
BC858W
-65
-45
-30
V
-5
V
Collector-emitter breakdown
voltage
V(BR)CEO
Emitter-base breakdown
voltage
V(BR)EBO
IE=-1μA,IC=0
Collector cut-off current
ICBO
VCB=-30V,IE=0
-15
nA
Emitter cut-off current
IEBO
VEB=-5V,IC=0
-0.1
μA
VCE=-5V,IC=-10μA
BC856AW,BC857AW
BC856BW,BC857BW,BC858BW
BC857CW,BC858CW
DC current gain
hFE
VCE=-5V,IC=-2mA
BC856AW,BC857AW
BC856BW,BC857BW,BC858BW
BC857CW,BC858CW
140
250
480
125
220
420
180
290
520
250
475
800
Collector-emitter saturation
voltage
VCE(sat)
IC=-10mA, IB= -0.5mA
IC=-100mA, IB= -5mA
-0.075
-0.25
Base-emitter saturation voltage
VBE(sat)
IC=-10mA, IB= -0.5mA
IC=-100mA, IB= -5mA
-0.7
-0.85
Base-emitter voltage
VBE(on)
IC=-2mA, VCE=5V
IC=-10mA, VCE=5V
Transition frequency
fT
VCE=-5V,IC=-20mA,f=100MHz
Collector-base capacitance
Ccb
VCB=-10V,f=1MHz
3
5
pF
Emitter-base capacitance
Ceb
VEB=-0.5V,f=1MHz
10
15
pF
F046
Rev.A
-0.3
-0.65
V
-0.75
-0.82
-0.6
V
250
V
MHz
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Production specification
PNP Silicon Epitaxial Planar Transistor
BC856W/BC857W/BC858W
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
F046
Rev.A
www.gmicroelec.com
3
Production specification
PNP Silicon Epitaxial Planar Transistor
BC856W/BC857W/BC858W
F046
Rev.A
www.gmicroelec.com
4
Production specification
PNP Silicon Epitaxial Planar Transistor
BC856W/BC857W/BC858W
PACKAGE OUTLINE
Plastic surface mounted package
SOT-323
A
SOT-323
E
K
B
C
D
J
G
Dim
Min
Max
A
2.00
2.20
B
1.15
1.35
C
0.95 Typical
D
0.30 Typical
E
0.25
0.40
G
1.2
1.4
H
0.02
0.10
H
J
K
0.10 Typical
2.20
2.40
All Dimensions in mm
SOLDERING FOOTPRINT
0.65
0.65
1.90
0.90
0.70
Unit : mm
PACKAGE INFORMATION
Device
Package
Shipping
BC856W/BC857W/BC858W
SOT-323
3000/Tape&Reel
F046
Rev.A
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