Production specification PNP Silicon Epitaxial Planar Transistor BC856W/BC857W/BC858W FEATURES Pb z For AF input stages and driver applications. z High current gain. z Low collector-emitter saturation voltage. z Low noise between 30Hz and 15 kHz. z Complementary types:BC846W,BC847W,BC848W. Lead-free APPLICATIONS z General purpose switching and amplification application. SOT-323 ORDERING INFORMATION Type No. Marking Package Code BC856W BC857W BC858W 3A/3B 3E/3F/3G 3J/3K/3L SOT-323 SOT-323 SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Value Units BC856W BC857W BC858W -80 -50 -30 V BC856W BC857W BC858W -65 -45 -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -100 mA ICM Peak Collector current -200 mA IBM Peak Base current -200 mA PC Collector Dissipation 200 mW Tj,Tstg Junction and Storage Temperature -65 to +150 ℃ F046 Rev.A www.gmicroelec.com 1 Production specification PNP Silicon Epitaxial Planar Transistor BC856W/BC857W/BC858W ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Collector-base breakdown voltage Symbol Test conditions IC=-10μA,IE=0 V(BR)CBO IC=-10mA,IB=0 MIN TYP MAX UNIT BC856W BC857W BC858W -80 -50 -30 V BC856W BC857W BC858W -65 -45 -30 V -5 V Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage V(BR)EBO IE=-1μA,IC=0 Collector cut-off current ICBO VCB=-30V,IE=0 -15 nA Emitter cut-off current IEBO VEB=-5V,IC=0 -0.1 μA VCE=-5V,IC=-10μA BC856AW,BC857AW BC856BW,BC857BW,BC858BW BC857CW,BC858CW DC current gain hFE VCE=-5V,IC=-2mA BC856AW,BC857AW BC856BW,BC857BW,BC858BW BC857CW,BC858CW 140 250 480 125 220 420 180 290 520 250 475 800 Collector-emitter saturation voltage VCE(sat) IC=-10mA, IB= -0.5mA IC=-100mA, IB= -5mA -0.075 -0.25 Base-emitter saturation voltage VBE(sat) IC=-10mA, IB= -0.5mA IC=-100mA, IB= -5mA -0.7 -0.85 Base-emitter voltage VBE(on) IC=-2mA, VCE=5V IC=-10mA, VCE=5V Transition frequency fT VCE=-5V,IC=-20mA,f=100MHz Collector-base capacitance Ccb VCB=-10V,f=1MHz 3 5 pF Emitter-base capacitance Ceb VEB=-0.5V,f=1MHz 10 15 pF F046 Rev.A -0.3 -0.65 V -0.75 -0.82 -0.6 V 250 V MHz www.gmicroelec.com 2 Production specification PNP Silicon Epitaxial Planar Transistor BC856W/BC857W/BC858W TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified F046 Rev.A www.gmicroelec.com 3 Production specification PNP Silicon Epitaxial Planar Transistor BC856W/BC857W/BC858W F046 Rev.A www.gmicroelec.com 4 Production specification PNP Silicon Epitaxial Planar Transistor BC856W/BC857W/BC858W PACKAGE OUTLINE Plastic surface mounted package SOT-323 A SOT-323 E K B C D J G Dim Min Max A 2.00 2.20 B 1.15 1.35 C 0.95 Typical D 0.30 Typical E 0.25 0.40 G 1.2 1.4 H 0.02 0.10 H J K 0.10 Typical 2.20 2.40 All Dimensions in mm SOLDERING FOOTPRINT 0.65 0.65 1.90 0.90 0.70 Unit : mm PACKAGE INFORMATION Device Package Shipping BC856W/BC857W/BC858W SOT-323 3000/Tape&Reel F046 Rev.A www.gmicroelec.com 5