IRF IRF7321D2PBF Ideal for buck regulator application Datasheet

PD - 95297
IRF7321D2PbF
TM
Co-packaged HEXFET® Power
MOSFET and Schottky Diode
l Ideal For Buck Regulator Applications
l P-Channel HEXFET®
l Low VF Schottky Rectifier
l Generation 5 Technology
l SO-8 Footprint
l Lead-Free
Description
FETKY MOSFET & Schottky Diode
l
1
8
K
A
2
7
K
S
3
6
D
G
4
5
D
A
VDSS = -30V
RDS(on) = 0.062Ω
Schottky Vf = 0.52V
Top View
The FETKYTM family of Co-packaged HEXFETs and
Schottky diodes offer the designer an innovative board
space saving solution for switching regulator and
power management applications. Generation 5
HEXFETs utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area.
Combinining this technology with International
Rectifier's low forward drop Schottky rectifiers results in
an extremely efficient device suitable for use in a wide
variety of portable electronics applications.
SO-8
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics. The
SO-8 package is designed for vapor phase, infrared or
wave soldering techniques.
Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted)
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
dv/dt
TJ, TSTG
Parameter
Maximum
Units
Continuous Drain Current, VGS @ -10V
-4.7
-3.8
-38
2.0
1.3
16
± 20
-5.0
-55 to +150
A
Pulsed Drain Current À
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt Á
Junction and Storage Temperature Range
W
mW/°C
V
V/ns
°C
Thermal Resistance Ratings
Parameter
RθJA
Junction-to-Ambient Ã
Maximum
Units
62.5
°C/W
Notes:
 Repetitive rating – pulse width limited by max. junction temperature (see fig. 11)
‚ ISD ≤ -2.9A, di/dt ≤ -77A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
ƒ Pulse width ≤ 300µs – duty cycle ≤ 2%
„ Surface mounted on FR-4 board, t ≤ 10sec.
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10/12/04
IRF7321D2PbF
MOSFET Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
Parameter
Drain-to-Source Breakdown Voltage
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Min.
-30
–––
–––
-1.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.042
0.076
–––
7.7
–––
–––
–––
–––
23
3.8
5.9
13
13
34
32
710
380
180
Max. Units
Conditions
–––
V
VGS = 0V, ID = -250µA
0.062
VGS = -10V, ID = -4.9A ƒ
Ω
0.098
VGS = -4.5V, ID = -3.6A ƒ
–––
V
VDS = VGS, ID = -250µA
–––
S
VDS = -15V, ID = -4.9A
-1.0
VDS = -24V, VGS = 0V
µA
-25
VDS = -24V, VGS = 0V, TJ = 55°C
100
VGS = -20V
nA
-100
VGS = 20V
34
ID = -4.9A
5.7
nC VDS = -15V
8.9
VGS = -10V, See Fig. 6 ƒ
19
VDD = -15V
20
ID = -1.0A
ns
51
RG = 6.0Ω
48
RD = 15Ω, ƒ
–––
VGS = 0V
–––
pF
VDS = -25V
–––
ƒ = 1.0MHz, See Fig. 5
MOSFET Source-Drain Ratings and Characteristics
IS
I SM
VSD
t rr
Q rr
Parameter
Min.
Continuous Source Current(Body Diode) –––
Pulsed Source Current (Body Diode)
–––
Body Diode Forward Voltage
–––
Reverse Recovery Time (Body Diode) –––
Reverse Recovery Charge
–––
Typ.
–––
–––
-0.78
44
42
Max. Units
Conditions
-2.5
A
-30
-1.0
V
TJ = 25°C, IS = -1.7A, VGS = 0V
66
ns
TJ = 25°C, IF = -1.7A
63
nC di/dt = 100A/µs ƒ
Schottky Diode Maximum Ratings
If (av)
I SM
Parameter
Max. Average Forward Current
Max. peak one cycle Non-repetitive
Surge current
Max. Units
3.2
A
2.0
200
20
A
Conditions
50% Duty Cycle. Rectangular Wave, Tc = 25°C
See Fig.14
Tc = 70°C
5µs sine or 3µs Rect. pulse
Following any rated
10ms sine or 6ms Rect. pulse load condition &
with Vrrm applied
Schottky Diode Electrical Specifications
Vfm
Parameter
Max. Forward voltage drop
Irm
Max. Reverse Leakage current
Ct
dv/dt
Max. Junction Capacitance
Max. Voltage Rate of Charge
Max. Units
0.57
0.77
V
0.52
0.79
0.30
mA
37
310 pF
4900 V/µs
Conditions
If = 3.0, Tj = 25°C
If = 6.0, Tj = 25°C
If = 3.0, Tj = 125°C
If = 6.0, Tj = 125°C .
Vr = 30V
Tj = 25°C
Tj = 125°C
Vr = 5Vdc ( 100kHz to 1 MHz) 25°C
Rated Vr
( HEXFET is the reg. TM for International Rectifier Power MOSFET's )
2
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IRF7321D2PbF
Power Mosfet Characteristics
100
100
VGS
- 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTTOM - 3.0V
VGS
- 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTTOM - 3.0V
TOP
-I D , Drain-to-Source Current (A)
-I D , Drain-to-Source Current (A)
TOP
10
-3.0V
20µs PULSE WIDTH
TJ = 25°C
A
1
0.1
1
-3.0V
20µs PULSE WIDTH
TJ = 150°C
A
1
10
0.1
-VDS, Drain-to-Source Voltage (V)
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
TJ = 25°C
TJ = 150°C
10
V DS = -10V
20µs PULSE WIDTH
3.0
3.5
4.0
4.5
5.0
5.5
-VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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10
Fig 2. Typical Output Characteristics
100
1
1
-VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
-I D , Drain-to-Source Current (A)
10
6.0
A
-4.9A
ID =-4.9A
1.5
1.0
0.5
0.0
-60 -40 -20
-10V
VGS =-10V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF7321D2PbF
Power Mosfet Characteristics
1400
Crss = Cgd
Coss = Cds + Cgd
1200
C, Capacitance (pF)
20
1000
Ciss
800
Coss
600
400
Crss
200
0
1
10
100
VDS =-15V
16
12
8
4
0
A
0
10
20
30
40
QG , Total Gate Charge (nC)
- V DS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
-IID , Drain Current (A)
-ISD , Reverse Drain Current (A)
ID = -4.9A
SHORTED
-VGS , Gate-to-Source Voltage (V)
VGS = 0V
f = 1 MHz
Ciss = Cgs + Cgd + Cds
TJ = 150°C
10
TJ = 25°C
VGS = 0V
1
0.4
0.6
0.8
1.0
1.2
-VSD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
A
1.4
100us
10
1ms
1
TC = 25 °C
TJ = 150 °C
Single Pulse
1
10ms
10
100
-VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF7321D2PbF
Power Mosfet Characteristics
Thermal Response (Z thJA )
100
0.50
0.20
10
0.10
0.05
0.02
1
PDM
0.01
t1
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJA + TA
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
0.6
0.5
0.4
0.3
V GS = -4.5V
0.2
0.1
VGS = -10V
0.0
0
10
20
-I D , Drain Current (A)
Fig 10. Typical On-Resistance Vs. Drain
Current
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30
A
RDS (on) , Drain-to-Source On Resistance (Ω)
RDS (on) , Drain-to-Source On Resistance (Ω)
Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
0.16
0.12
0.08
I D = -4.9A
0.04
0.00
0
3
6
9
12
15
-V GS , Gate -to-Source Voltage (V)
Fig 11. Typical On-Resistance Vs. Gate
Voltage
5
A
IRF7321D2PbF
Schottky Diode Characteristics
100
100
J Reverse Current - IR (mA)
10
TJ = 150°C
1
0.1
0.01
0.001
TJ = 125°C
)
0
10
20
30
R TJ = 25°C
Fig. 13 - Typical Values of
Reverse Current Vs. Reverse Voltage
1
0.1
0.0
0.2
0.4
0.6
0.8
1.0
Forward Voltage Drop - V FM (V)
Forward Voltage Drop - VF (V)
Fig. 12 - Typical Forward Voltage Drop
Characteristics
Allowable Am bient Temperature - (°C)
Instantaneous Forward Current - IF (A)
10
160
V r = 80% Rated
R thJA = 62.5°C/W
Square wave
140
120
100
DC
80
60
40
20
D = 3/4
D = 1/2
D =1/3
D = 1/4
D = 1/5
A
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Average Forward Current - I F(AV) (A)
Fig.14 - Maximum Allowable Ambient
Temp. Vs. Forward Current
6
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IRF7321D2PbF
SO-8 (Fetky) Package Outline
D
DIM
B
5
A
8
6
7
6
H
E
1
2
3
0.25 [.010]
4
A
MIN
.0532
.0688
1.35
1.75
A1 .0040
e
e1
8X b
0.25 [.010]
A
A1
MAX
0.25
.0098
0.10
b
.013
.020
0.33
0.51
c
.0075
.0098
0.19
0.25
D
.189
.1968
4.80
5.00
E
.1497
.1574
3.80
4.00
e
.050 BASIC
1.27 BASIC
.025 BASIC
0.635 BASIC
e1
6X
MILLIMET ERS
MAX
A
5
INCHES
MIN
H
.2284
.2440
5.80
6.20
K
.0099
.0196
0.25
0.50
L
.016
.050
0.40
1.27
y
0°
8°
0°
8°
K x 45°
C
y
0.10 [.004]
8X c
8X L
7
C A B
FOOT PRINT
NOT ES :
1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994.
2. CONT ROLLING DIMENS ION: MILLIMET ER
8X 0.72 [.028]
3. DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ].
4. OUT LINE CONFORMS T O JEDEC OUT LINE MS -012AA.
5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS.
MOLD PROT RUS IONS NOT T O EXCEED 0.15 [.006].
6.46 [.255]
6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS.
MOLD PROT RUS IONS NOT T O EXCEED 0.25 [.010].
7 DIMENS ION IS T HE LENGTH OF LEAD FOR S OLDERING T O
A S UBS TRAT E.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 (Fetky) Part Marking Information
EXAMPLE: THIS IS AN IRF7807D1 (FET KY)
INT ERNAT IONAL
RECT IFIER
LOGO
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XXXX
807D1
DATE CODE (YWW)
P = DIS GNATES LEAD - FREE
PRODUCT (OPTIONAL)
Y = LAS T DIGIT OF T HE YEAR
WW = WEEK
A = AS S EMBLY S IT E CODE
LOT CODE
PART NUMBER
7
IRF7321D2PbF
SO-8 Tape and Reel
Dimensions are shown in milimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualifications Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.10/04
8
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