Transistors SMD Type PNP Transistors BC856W,BC857W,BC858W (KC856W,KC857W,KC858W) ■ Features ● Ideally suited for automatic insertion ● For Switching and AF Amplifier Applications 1.Base 2.Emitter 3.Collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol BC856W Collector - Base Voltage Collector - Emitter Voltage BC857W VCBO -50 BC858W -30 BC856W -65 BC857W Unit -80 VCEO BC858W Emitter - Base Voltage Rating V -45 -30 VEBO -5 Collector Current - Continuous IC -100 mA Collector Power Dissipation PC 150 mW Junction Temperature TJ 150 Tstg -65 to 150 Storage Temperature range ℃ www.kexin.com.cn 1 Transistors SMD Type PNP Transistors BC856W,BC857W,BC858W (KC856W,KC857W,KC858W) ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min BC856W Collector- base breakdown voltage Ic= -100 μA， IE=0 BC858W -30 BC856W -65 VCEO BC857W Ic= -10 mA， IB=0 V -45 -30 Emitter - base breakdown voltage VEBO BC856W -5 IE= -100μA， IC=0 VCB= -80 V , IE=0 ICBO BC857W -0.1 VCB= -50 V , IE=0 VCB= -30 V , IE=0 BC858W Emitter cut-off current IEBO VEB= -5V , IC=0 VCE(sat) IC=-100 mA, IB=-5mA -0.65 Base - emitter saturation voltage VBE(sat) IC=-100 mA, IB=-5mA -1.1 BC846AW,847AW,848AW BC846BW,847BW,848BW 125 hFE VCE= -5V, IC=-2mA BC847CW,848CW Collector output capacitance Cob Transition frequency fT 220 475 420 800 VCB= -10V,f=1MHz 4.5 VCE= -5V, IC=-10mA,f=100MHz 100 pF MHz Type BC856AW BC856BW BC857AW BC857BW BC857CW BC858AW BC858BW BC858CW Range 125-250 220-475 125-250 220-475 420-800 125-250 220-475 420-800 Marking 3A 3B 3E 3F 3G 3J 3K 3L www.kexin.com.cn V 250 ■ Classification of hfe 2 uA -0.1 Collector-emitter saturation voltage DC current gain Unit -50 BC858W Collector-base cut-off current Max -80 VCBO BC857W Collector- emitter breakdown voltage Typ Transistors SMD Type PNP Transistors BC856W,BC857W,BC858W (KC856W,KC857W,KC858W) ■ Typical Characterisitics Static Characteristic COMMON EMITTER Ta=25℃ -18uA IC -16uA -14uA COLLECTOR CURRENT -4 DC CURRENT GAIN (mA) -20uA -5 -12uA -3 h FE 500 hFE -6 -10uA -8uA -2 -6uA VCE=-5V 400 Ta=100℃ 300 Ta=25℃ 200 -4uA -1 —— IC 100 IB=-2uA -0 -0 -2 -4 -6 -8 COLLECTOR-EMITTER VOLTAGE V BEsat -1000 —— VCE COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) Ta=100℃ -200 -1 -10 COLLECTOR CURRENT 15 C ob / ibC IC COLLECTOR POWER DISSIPATION PC (mW) (pF) CAPACITANCE C Cib 9 Cob 3 -1 β=20 -1 V -10 PC 180 Ta=25℃ (V) -10 I C COLLECTOR CURRENT 12 REVERSE BIAS VOLTAGE —— (mA) Ta=25℃ (mA) f=1MHz IE=0/IC=0 0 -0.1 -100 IC Ta=100℃ -100 -10 -0.1 -100 —— V CB / VEB 6 V CEsat -1000 -600 -0 -0.1 -10 I C Ta=25℃ -400 -1 COLLECTOR CURRENT β=20 -800 0 -10 (V) —— IC -100 (mA) T a 150 120 90 60 30 0 0 25 50 75 100 AMBIENT TEMPERATURE Ta 125 150 (℃) www.kexin.com.cn 3