FQB25N33TM_F085 330V N-Channel MOSFET tm Features General Description • 25A, 330V, RDS(on) = 0.23Ω @VGS = 10V These N-Channel enhancement mode power field effect transistors are produced using Farichild’s proprietary, planar stripe, DMOS technology. • Low gate charge (typical 58nC) • Low Crss (typical 40pF) This advanced technology has been especially tailored to minimized on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology. • Fast switching • 100% avalanche tested • Improved dv/dt capability • Qualified to AEC Q101 • RoHS Compliant Absolute Maximum Ratings Symbol VDSS Drain-Source Voltage ID Drain Current Parameter - Continuous (TC = 25oC) - Continuous (TC = 100oC) IDM Drain Current VGSS Gate -Source Voltage EAS Single Pulse Avalanche Energy IAR Avalanche Current EAR dv/dt - Pulsed (Note 1) V 25 A 16.0 A 100 A V (Note 2) 370 mJ (Note 1) 25 A Repetitive Avalance Energy (Note 1) 37 mJ Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns 3.1 W Power Dissipation (TC = 25oC) - Derate above 25oC TJ, TSTG Operating and Storage Temperature TL Units 330 ±30 Power Dissipation (TA = 25oC) * PD Ratings Maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds 250 W 2.0 W/oC -55 to +150 o C 300 o C Thermal Characteristics Symbol Ratings Parameter Units RθJC Thermal Resistance, Junction to Case 0.5 o RθJA Thermal Resistance, Junction to Ambient * 40 oC/W RθJA Thermal Resistance, Junction to Ambient 62.5 o C/W C/W * When mounted on the minimum pad size recommended (PCB Mount) ©2010 Fairchild Semiconductor Corporation FQB25N33TM_F085 Rev. A 1 www.fairchildsemi.com FQB25N33TM_F085 330V N-Channel MOSFET April 2010 Device Marking Device Package Reel Size FQB25N33 FQB25N33TM_F085 D2-PAK 330mm Tape Width Quantity 24mm 800 Electrical Characteristics TC = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage ID = 250µA, VGS = 0V 330 -- -- V -- 0.34 -- V/oC ∆BVDSS/ ∆TJ Breakdown Voltage Temperature Coefficient ID = 250µA, Referenced to 25 C IDSS Zero Gate Voltage Drain Current VDS = 330V,VGS = 0V VDS = 264V,TC =125°C -- -- 1 -- -- 10 IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA IGSSR Gate-Body Leakage Current, Forward VGS = -30V, VDS = 0V -- -- -100 nA o µA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA 3.0 -- 5.0 V RDS(on) Drain to Source On Resistance VGS = 10V, ID = 12.5A, -- 0.18 0.23 Ω gFS Forward Transonductance VDS = 50V, ID = 12.5A, (Note 4) -- 1 -- S -- 1510 2010 pF -- 290 385 pF -- 40 60 pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg(TOT) Total Gate Charge Qgs Gate to Source Gate Charge Qgd Gate to Drain Charge VDD = 165V, ID = 25A RGS = 25Ω (Note 4, 5) VDS = 297V, ID = 25A, VGS = 15V, (Note 4, 5) -- 20 35 ns -- 100 160 ns -- 90 145 ns -- 70 110 ns -- 58 75 nC -- 11.2 -- nC -- 21 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 25 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 100 A VSD Drain-Source Diode Forward Voltage VGS = 0, IS = 25A -- -- 1.5 V trr Reverse Recovery Time -- 275 -- ns Qrr Reverse Recovery Charge VGS = 0, IS = 25A, dIF/dt = 100A/µs -- 3.6 -- µC (Note 4) Notes: 1: Repetitive Rating : Pluse width Limited by maximum junction temperature 2: L = 1.79mH, IAS = 25A, VDD = 50V, RG = 25Ω, Starting TJ = 25oC 3: ISD ≤ 25A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25oC 4: Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5: Essentially independent of operating temperature FQB25N33TM_F085 Rev. A 2 www.fairchildsemi.com FQB25N33TM_F085 330V N-Channel MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 100 100 VGS 10 15.0 V 10.0 V 8.0 V 7.5 V 7.0 V 6.5 V 6.0 V 5.5 V Bottom : 5.0 V ID, Drain Current [A] ID, Drain Current [A] Top : 1 1 o 150 C o 25 C 1 2. 250µs Pulse Test 0.1 10 2 4 6 8 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 0.45 100 IDR, Reverse Drain Current [A] 0.40 VGS = 10V 0.35 0.30 0.25 0.20 VGS = 15V 0.15 10 1 o 150 C 0.1 o 25 C 0.01 1E-3 * Notes : 1. VGS = 0V o * Note : TJ = 25 C 0.10 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] RDS(ON) [Ω ], Drain-Source On-Resistance o -55 C * Notes : 1. VDS = 50V * Notes : 1. 250µs Pulse Test o 2. TC = 25 C 0.1 10 0 10 20 30 40 50 2. 250µs Pulse Test 1E-4 0.0 60 0.2 ID, Drain Current [A] 0.4 0.6 0.8 1.0 1.2 VSD, Source-Drain voltage [V] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 12 VDS = 66V 4000 VGS, Gate-Source Voltage [V] Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Capacitances [pF] CAPACITANCE (pF) Crss = Cgd 3000 Ciss 2000 Coss * Note ; 1. VGS = 0 V 1000 Crss 10 1 6 4 2 2. f = 1 MHz * Note : ID = 25A 10 0 10 20 30 40 50 60 70 QG, Total Gate Charge [nC] 100 VDS, Drain-Source Voltage [V] FQB25N33TM_F085 Rev. A VDS = 264V 8 0 0 0.1 VDS = 165V 3 www.fairchildsemi.com FQB25N33TM_F085 330V N-Channel MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 * Notes : 1. VGS = 0 V 2.5 2.0 1.5 1.0 * Notes : 1. VGS = 10 V 0.5 2. ID = 250 µA 0.8 -100 -50 0 50 100 2. ID = 12.5 A 150 0.0 -100 200 -50 50 100 150 200 TJ, Junction Temperature [ C] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 500 30 25 100 100 µs ID, DRAIN CURRENT (A) ID, Drain Current [A] 0 o o TJ, Junction Temperature [ C] 1ms 10 10ms DC Operation in This Area is Limited by R DS(on) 1 * Notes : o 1. TC = 25 C 20 15 10 5 o 2. TJ = 150 C 3. Single Pulse 0.1 1 10 100 0 25 1000 50 75 100 125 150 o TC, Case Temperature [ C] VDS, Drain-SourceVoltage[V] Figure 11. Transient Thermal Response Curve Z θJC (t), Thermal Response 2 1 D = 0 .5 0 .2 0 .1 0 .1 0 .0 5 0 .0 2 0 .0 1 PDM t1 0 .0 1 s in g le p u ls e * N o te s : 1 . Z θJC (t) = 0 .5 0 C /W t2 M a x . 2 . D u ty F a c to r , D = t1/t2 3 . T 1 E -3 1 0 -5 1 0 -4 1 0 -3 t1, S q u a re FQB25N33TM_F085 Rev. A 1 0 W a v e -2 P u ls e 4 1 0 J M - T C = -1 D u r a t io n P * Z D M 1 0 0 θ J C (t) 1 0 1 [s e c ] www.fairchildsemi.com FQB25N33TM_F085 330V N-Channel MOSFET Typical Performance Characteristics (Continued) FQB25N33TM_F085 330V N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FQB25N33TM_F085 Rev. A 5 www.fairchildsemi.com FQB25N33TM_F085 330V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms FQB25N33TM_F085 Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production Definition Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I48 FQB25N33TM_F085 Rev. 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