Plastic-Encapsulate Transistors COMPLEMENTARY PAIR SMALL SIGNAL SURFACE MOUNT TRANSISTOR BC847PN Features · · · Epitaxial Die Construction Two internal isolated NPN/PNP Transistors in one package Ultra-Small Surface Mount Package Mechanical Data · · · · · · · · C1 Case: SOT-363, Molded Plastic Case material - UL Flammability Rating Classification 94V-0 Moisture sensitivity: Level 1 per J-STD-020A Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking (See Page 3): K7P Ordering & Date Code Information: See Page 3 Weight: 0.006 grams (approx.) Maximum Ratings E1 Symbol Value Pd 200 mW RqJA 625 °C/W Tj, TSTG -65 to +150 °C Unit NPN BC847B Section @ TA = 25°C unless otherwise specified Characteristic C2 Total Device Thermal Resistance, Junction to Ambient (Note 1) Maximum Ratings B1 SOT-363 Power Dissipation (Note 1) Operating and Storage Temperature Range E2 G @ TA = 25°C unless otherwise specified Characteristic B2 Symbol Value Unit Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 45 V Emitter-Base Voltage VEBO 6.0 V IC 100 mA Peak Collector Current ICM 200 mA Peak Emitter Current IEM 200 mA Collector Current Maximum Ratings @ TA = 25°C unless otherwise specified Characteristic PNP BC857B Section Symbol Value Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -45 V Emitter-Base Voltage VEBO -5.0 V IC -100 mA Peak Collector Current ICM -200 mA Peak Emitter Current IEM -200 mA Collector Current Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. GUANGDONG HOTTECH INDUSTRIAL CO,. LTD. Page:P2-P1 Plastic-Encapsulate Transistors Electrical Characteristics NPN BC847B Section @ TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Collector-Base Breakdown Voltage (Note 2) V(BR)CBO 50 — — V IC = 10mA, IB = 0 Collector-Emitter Breakdown Voltage (Note 2) V(BR)CEO 45 — — V IC = 10mA, IB = 0 Emitter-Base Breakdown Voltage (Note 2) V(BR)EBO 6 — — V IE = 1mA, IC = 0 hFE DC Current Gain (Note 2) Test Condition 200 290 450 — VCE = 5.0V, IC = 2.0mA 250 600 mV IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5.0mA Collector-Emitter Saturation Voltage (Note 2) VCE(SAT) — 90 200 Base-Emitter Saturation Voltage (Note 2) VBE(SAT) — 700 900 — mV IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5.0mA Base-Emitter Voltage (Note 2) VBE(ON) 580 — 660 — 700 720 mV VCE = 5.0V, IC = 2.0mA VCE =5.0V, IC = 10mA ICBO ICBO — — — — 15 5.0 nA µA VCB = 30V VCB = 30V, TA = 150°C fT 100 300 — MHz VCE = 5.0V, IC = 10mA, f = 100MHz CCBO — 3.5 6.0 pF VCB = 10V, f = 1.0MHz NF — 2.0 10 dB VCE = 5V, IC = 200µA, RG = 2.0kW, f = 1.0kHz, Df = 200Hz Collector-Cutoff Current (Note 2) Gain Bandwidth Product Collector-Base Capacitance Noise Figure Electrical Characteristics PNP BC857B Section @ TA = 25°C unless otherwise specified Symbol Min Typ Max Unit Collector-Base Breakdown Voltage (Note 2) Characteristic V(BR)CBO -50 — — V IC = 10mA, IB = 0 Collector-Emitter Breakdown Voltage (Note 2) V(BR)CEO -45 — — V IC = 10mA, IB = 0 Emitter-Base Breakdown Voltage (Note 2) V(BR)EBO -5 — — V IE = 1mA, IC = 0 hFE 220 290 475 — VCE = 5.0V, IC = 2.0mA -300 -650 mV IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5.0mA DC Current Gain (Note 2) Test Condition Collector-Emitter Saturation Voltage (Note 2) VCE(SAT) — -75 -250 Base-Emitter Saturation Voltage (Note 2) VBE(SAT) — -700 -850 — -950 mV IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5.0mA Base-Emitter Voltage (Note 2) VBE(ON) -600 — -650 — -750 -820 mV VCE = 5.0V, IC = 2.0mA VCE =5.0V, IC = 10mA ICBO ICBO — — — — -15 -4.0 nA µA VCB = 30V VCB = 30V, TA = 150°C fT 100 200 — MHz VCE = 5.0V, IC = 10mA, f = 100MHz CCBO — 3 4.5 pF VCB = 10V, f = 1.0MHz NF — — 10 dB VCE = 5V, IC = 200µA, RG = 2.0kW, f = 1.0kHz, Df = 200Hz Collector-Cutoff Current (Note 2) Gain Bandwidth Product Collector-Base Capacitance Noise Figure Notes: 2. Short duration pulse test used to minimize self-heating effect. GUANGDONG HOTTECH INDUSTRIAL CO,. LTD. Page:P2-P2