HOTTECH BC847PN Plastic-encapsulate transistor Datasheet

Plastic-Encapsulate Transistors
COMPLEMENTARY PAIR SMALL SIGNAL SURFACE
MOUNT TRANSISTOR
BC847PN
Features
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Epitaxial Die Construction
Two internal isolated NPN/PNP Transistors in
one package
Ultra-Small Surface Mount Package
Mechanical Data
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·
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C1
Case: SOT-363, Molded Plastic
Case material - UL Flammability Rating
Classification 94V-0
Moisture sensitivity: Level 1 per J-STD-020A
Terminals: Solderable per MIL-STD-202,
Method 208
Terminal Connections: See Diagram
Marking (See Page 3): K7P
Ordering & Date Code Information: See Page 3
Weight: 0.006 grams (approx.)
Maximum Ratings
E1
Symbol
Value
Pd
200
mW
RqJA
625
°C/W
Tj, TSTG
-65 to +150
°C
Unit
NPN BC847B Section
@ TA = 25°C unless otherwise specified
Characteristic
C2
Total Device
Thermal Resistance, Junction to Ambient (Note 1)
Maximum Ratings
B1
SOT-363
Power Dissipation (Note 1)
Operating and Storage Temperature Range
E2
G
@ TA = 25°C unless otherwise specified
Characteristic
B2
Symbol
Value
Unit
Collector-Base Voltage
VCBO
50
V
Collector-Emitter Voltage
VCEO
45
V
Emitter-Base Voltage
VEBO
6.0
V
IC
100
mA
Peak Collector Current
ICM
200
mA
Peak Emitter Current
IEM
200
mA
Collector Current
Maximum Ratings
@ TA = 25°C unless otherwise specified
Characteristic
PNP BC857B Section
Symbol
Value
Unit
Collector-Base Voltage
VCBO
-50
V
Collector-Emitter Voltage
VCEO
-45
V
Emitter-Base Voltage
VEBO
-5.0
V
IC
-100
mA
Peak Collector Current
ICM
-200
mA
Peak Emitter Current
IEM
-200
mA
Collector Current
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
GUANGDONG HOTTECH
INDUSTRIAL CO,. LTD.
Page:P2-P1
Plastic-Encapsulate Transistors
Electrical Characteristics
NPN BC847B Section
@ TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Collector-Base Breakdown Voltage (Note 2)
V(BR)CBO
50
—
—
V
IC = 10mA, IB = 0
Collector-Emitter Breakdown Voltage (Note 2)
V(BR)CEO
45
—
—
V
IC = 10mA, IB = 0
Emitter-Base Breakdown Voltage (Note 2)
V(BR)EBO
6
—
—
V
IE = 1mA, IC = 0
hFE
DC Current Gain (Note 2)
Test Condition
200
290
450
—
VCE = 5.0V, IC = 2.0mA
250
600
mV
IC = 10mA, IB = 0.5mA
IC = 100mA, IB = 5.0mA
Collector-Emitter Saturation Voltage (Note 2)
VCE(SAT)
—
90
200
Base-Emitter Saturation Voltage (Note 2)
VBE(SAT)
—
700
900
—
mV
IC = 10mA, IB = 0.5mA
IC = 100mA, IB = 5.0mA
Base-Emitter Voltage (Note 2)
VBE(ON)
580
—
660
—
700
720
mV
VCE = 5.0V, IC = 2.0mA
VCE =5.0V, IC = 10mA
ICBO
ICBO
—
—
—
—
15
5.0
nA
µA
VCB = 30V
VCB = 30V, TA = 150°C
fT
100
300
—
MHz
VCE = 5.0V, IC = 10mA,
f = 100MHz
CCBO
—
3.5
6.0
pF
VCB = 10V, f = 1.0MHz
NF
—
2.0
10
dB
VCE = 5V, IC = 200µA,
RG = 2.0kW,
f = 1.0kHz, Df = 200Hz
Collector-Cutoff Current (Note 2)
Gain Bandwidth Product
Collector-Base Capacitance
Noise Figure
Electrical Characteristics
PNP BC857B Section
@ TA = 25°C unless otherwise specified
Symbol
Min
Typ
Max
Unit
Collector-Base Breakdown Voltage (Note 2)
Characteristic
V(BR)CBO
-50
—
—
V
IC = 10mA, IB = 0
Collector-Emitter Breakdown Voltage (Note 2)
V(BR)CEO
-45
—
—
V
IC = 10mA, IB = 0
Emitter-Base Breakdown Voltage (Note 2)
V(BR)EBO
-5
—
—
V
IE = 1mA, IC = 0
hFE
220
290
475
—
VCE = 5.0V, IC = 2.0mA
-300
-650
mV
IC = 10mA, IB = 0.5mA
IC = 100mA, IB = 5.0mA
DC Current Gain (Note 2)
Test Condition
Collector-Emitter Saturation Voltage (Note 2)
VCE(SAT)
—
-75
-250
Base-Emitter Saturation Voltage (Note 2)
VBE(SAT)
—
-700
-850
—
-950
mV
IC = 10mA, IB = 0.5mA
IC = 100mA, IB = 5.0mA
Base-Emitter Voltage (Note 2)
VBE(ON)
-600
—
-650
—
-750
-820
mV
VCE = 5.0V, IC = 2.0mA
VCE =5.0V, IC = 10mA
ICBO
ICBO
—
—
—
—
-15
-4.0
nA
µA
VCB = 30V
VCB = 30V, TA = 150°C
fT
100
200
—
MHz
VCE = 5.0V, IC = 10mA,
f = 100MHz
CCBO
—
3
4.5
pF
VCB = 10V, f = 1.0MHz
NF
—
—
10
dB
VCE = 5V, IC = 200µA,
RG = 2.0kW,
f = 1.0kHz, Df = 200Hz
Collector-Cutoff Current (Note 2)
Gain Bandwidth Product
Collector-Base Capacitance
Noise Figure
Notes:
2. Short duration pulse test used to minimize self-heating effect.
GUANGDONG HOTTECH
INDUSTRIAL CO,. LTD.
Page:P2-P2
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