Freescale Semiconductor Advance Information Document Number: MC34653 Rev. 8.0, 2/2007 1.0 A Negative Voltage Hot Swap Controller 34653 The 34653 is a highly integrated - 48 V hot swap controller with an internal Power MOSFET. It provides the means to safely install and remove boards from live - 48 V backplanes without having to power down the entire system. It regulates the inrush current, from the supply to the load’s filter capacitor, to a user-programmable limit, allowing the system to safely stabilize. A disable function allows the user to disable the 34653 manually or through a microprocessor and safely disconnect the load from the main power line. HOT SWAP The 34653 has active high and active low power good output signals that can be used to directly enable a power module load. Undervoltage and overvoltage detection circuitry monitors the input voltage to check that it is within its operating range. A start-up delay timer ensures that it is safe to turn on the Power MOSFET and charge the load capacitor. EF SUFFIX (Pb-Free) 98ASB42564B 8-PIN SOICN A two-level current limit approach to controlling the inrush current and switching on the load limits the peak power dissipation in the Power MOSFET. Both current limits are user programmable. Features • Integrated Power MOSFET and Control IC in a Small Outline Package • Input Voltage Operation Range from - 39 V to - 74 V • Programmable Overcurrent Limit with Auto Retry • Programmable Charging Current Limit Independent of Load Capacitor • Start-Up and Retry Delay Timer • Overvoltage and Undervoltage Detection • Active High and Low Power Good Output Signals • Thermal Shutdown • Pb-Free Packaging Designated by Suffix Code EF ORDERING INFORMATION Device MCZ34653EF/ R2 MC34653EF/ R2 Temperature Range (TA) Package - 40°C to 85°C 8 SOICN 34653 DISABLE PG GND Application Dependent VPWR PG System Power Supply (Backplane) -48 V Optional External Components VOUT Load VIN ILIM ICHG Optional External Components Figure 1. 34653 Simplified Application Diagram * This document contains certain information on a new product. Specifications and information herein are subject to change without notice. © Freescale Semiconductor, Inc., 2007. All rights reserved. INTERNAL BLOCK DIAGRAM INTERNAL BLOCK DIAGRAM DISABLE Referenced VPWR Logic Fixed Oscillator VPWR PG - UVLO 1.3 V + - Logic UV PG 1.3 V + + OV 1.3 V - VIN Thermal Shutdown ILIM 3.1 V 8.0 µA External Resistors Detection Programmable Current Limit Gate Control Driver ICHG Sensor MOSFET VIN Power MOSFET VOUT Figure 2. 34653 Simplified Internal Block Diagram 34653 2 Analog Integrated Circuit Device Data Freescale Semiconductor PIN CONNECTIONS PIN CONNECTIONS PG 1 8 ICHG PG 2 7 ILIM VOUT 3 6 DISABLE VIN 4 5 VPWR Figure 3. 8-SOICN Pin Connections Table 1. 8-SOICN Pin Definitions A functional description of each pin can be found in the FUNCTIONAL PIN DESCRIPTION section beginning on page 8. Pin Pin Name Formal Name Definition 1 PG Power Good Output (Active High) This is an active high power good output signal. This pin is referenced to VIN. 2 PG Power Good Output (Active Low) This is an active low power good output signal. This pin is referenced to VIN. 3 VOUT Voltage Output This pin is the drain of the internal Power MOSFET and supplies a current limited voltage to the load. 4 VIN Negative Supply Voltage Input This is the most negative power supply input. All pins except DISABLE are referenced to this input. 5 VPWR Positive Supply Voltage Input This is the most-positive power supply input. The load connects between this pin and the VOUT pin. 6 DISABLE Disable Input Control This pin is used to easily disconnect or connect the load from the main power line by disabling or enabling the 34653. It can also be used to reset the fault conditions that cause a “Power No Good” signal. This pin is referenced to VPWR. 7 ILIM Current Limit Control This pin is used to set the overcurrent limit during normal operation. 8 ICHG Charging Current Limit Control This pin is used to set the load’s input capacitor charging current limit, hence limiting the inrush current to a known constant value. 34653 Analog Integrated Circuit Device Data Freescale Semiconductor 3 ELECTRICAL CHARACTERISTICS MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS MAXIMUM RATINGS Table 2. Maximum Ratings All voltages are with respect to ground unless otherwise noted. Exceeding these ratings may cause a malfunction or permanent damage to the device. Ratings Symbol Value Unit VPWR 85 V Power MOSFET Energy Capability EMOSFET Varies (1) mJ Continuous Output Current (2) IO (CONT) 1.0 A DISABLE Pin — VIN - 0.3 to VPWR + 5.5 ILIM and ICHG Pins — 5.0 PG Pin (VPG - VIN) — 85 PG Pin (VPG - VIN) — 85 All Pins Minimum Voltage — - 0.3 V PG, PG Maximum Current — Internally Limited A VESD3 ± 2000 VESD4 ± 200 TSTG - 65 to 150 TA - 40 to 85 TJ - 40 to 160 TPPRT Note 6 RθJA 167 RθJMA 115 ELECTRICAL RATINGS Power Supply Voltage Maximum Voltage ESD Voltage, All Pins V (3) V Human Body Model Machine Model THERMAL RATINGS Storage Temperature °C Operating Temperature Ambient (4) Junction Peak Package Reflow Temperature During Reflow (5), (6) °C °C/W Thermal Resistance (7) , (8) Junction-to-Ambient, Single-Layer Board °C (9) Junction-to-Ambient, Four-Layer Board (10) Notes 1. Refer to the section titled Power MOSFET Energy Capability on page 21 for a detailed explanation on this parameter. 2. Continuous output current capability so long as TJ is ≤ 160°C. 3. ESD1 testing is performed in accordance with the Human Body Model (CZAP = 100 pF, RZAP = 1500 Ω), ESD2 testing is performed in accordance with the Machine Model (CZAP = 200 pF, RZAP = 0 Ω). 4. 5. The limiting factor is junction temperature, taking into account power dissipation, thermal resistance, and heatsinking. Pin soldering temperature limit is for 10 seconds maximum duration. Not designed for immersion soldering. Exceeding these limits may cause malfunction or permanent damage to the device. Freescale’s Package Reflow capability meets Pb-free requirements for JEDEC standard J-STD-020C. For Peak Package Reflow Temperature and Moisture Sensitivity Levels (MSL), Go to www.freescale.com, search by part number [e.g. remove prefixes/suffixes and enter the core ID to view all orderable parts. (i.e. MC33xxxD enter 33xxx), and review parametrics. Refer to the section titled Thermal Shutdown on page 15 for more thermal resistance values under various conditions. The VOUT and VIN pins comprise the main heat conduction paths. Per SEMI G38-87 and JEDEC JESD51-2 with the single-layer board (JESD51-3) horizontal. Per JEDEC JESD51-6 with the board (JESD51-7) horizontal. There are no thermal vias connecting the package to the two planes in the board. 6. 7. 8. 9. 10. 34653 4 Analog Integrated Circuit Device Data Freescale Semiconductor ELECTRICAL CHARACTERISTICS STATIC ELECTRICAL CHARACTERISTICS STATIC ELECTRICAL CHARACTERISTICS Table 3. Static Electrical Characteristics Characteristics noted under conditions 36 V ≤ VPWR ≤ 80 V and - 40°C ≤ TA ≤ 85°C. All voltages are referenced to VIN unless otherwise noted. Characteristic Symbol Min Typ Max Unit Supply Voltage VPWR 36 — 80 V Operating Voltage Range VPWR VUV (ON) VOV (ON) V IIN — 900 1400 µA VUVLOR 7.0 8.0 9.0 POWER SUPPLY PIN (VPWR) Supply Current, Device Enabled, Default Mode, Normal Operation (11) Undervoltage Lockout Threshold (UVLO) V Rising VUVLOF 6.0 7.0 8.0 VUVLOHY — 1.0 — Rising VUV(ON) — 38 — Falling VUV(OFF) — 37 — VUVHY — 1.0 — Falling Hysteresis UNDERVOLTAGE CONTROL UV Threshold (Default) V Hysteresis OVERVOLTAGE CONTROL OV Threshold (Default) V Rising VOV (OFF) — 78 — Falling VOV (ON) — 76 — VOVHY — 2.0 — VDISL VPWR - 1.2 — VPWR + 1.2 Active State, Positive Signal VDISHP VPWR + 2.0 — — Active State, Negative Signal VDISHN — — VPWR - 2.0 Hysteresis DISABLE INPUT CONTROL PIN (DISABLE) (12) DISABLE Input Voltage V Inactive State DISABLE Input Current µA IDIS VDIS = VPWR + 3.3 V 20 60 140 VDIS = VPWR - 3.3 V - 20 - 60 -140 VDIS = VIN - 50 -150 - 250 Notes 11. The supply current depends on operation mode and can be calculated as follows: •Start-Up Mode: IIN = 539 µA + 548 µ * ICHG(A) + 216 µ * ILIM(A) + VPWR(V) / 460(kΩ) •Normal Mode: IIN = 539 µA + 240 µ * ILIM(A) + 288 µ * ILOAD(A) + VPWR(V) / 460(kΩ) •Overcurrent Mode: IIN = 539 µA + 612 µ * ILIM(A) + VPWR(V) / 460(kΩ) •Disable Mode: IIN = 539 µA + 240 µ * ILIM(A) + IDIS(µA) + VPWR(V) / 460(kΩ) 12. Referenced to VPWR. 34653 Analog Integrated Circuit Device Data Freescale Semiconductor 5 ELECTRICAL CHARACTERISTICS STATIC ELECTRICAL CHARACTERISTICS Table 3. Static Electrical Characteristics (continued) Characteristics noted under conditions 36 V ≤ VPWR ≤ 80 V and - 40°C ≤ TA ≤ 85°C. All voltages are referenced to VIN unless otherwise noted. Characteristic Symbol Min Typ Max Default — 1.0 — Maximum with External Resistor — 1.25 — Minimum with External Resistor — 0.15 — Unit CURRENT LIMIT PINS (ILIM, ICHG) Overcurrent Limit Steady State Current Limit During Start-Up ILIM A ICHG A Default — 0.1 — Maximum with External Resistor — 0.5 — Minimum with External Resistor — 0.05 — Short Circuit Current Limit ISHORT — 5.0 — A ILIM Current Limit Hysteresis ILIMHY — 12 — % ILIM Current Limit Accuracy ILIMCLA -20 — 20 % ICHG Current Limit Accuracy ICHGCLA - 35 — 35 % VILIM — 3.1 — V ILIM to RILIM Setting Constant ILIMCNS — 129 — A * kΩ ICHG Reference Current ICHGOUT — - 8.0 — µA ICHGCNS — 335 — kΩ/A — — 0.5 — — 10 — — 7.0 IOUTLG — — 50 µA RDS(ON) — 144 — mΩ TSD — 160 — °C TSDHY — 25 — °C ILIM Pin Voltage ICHG to RICHG Setting Constant POWER GOOD PINS (PG, PG) (13) Power Good Output Low Voltage VPGL IPG = 1.6 mA Power Good Leakage Current IPGLG Power Good Current Limit IPGCL VPG or VPG = 3.0 V V µA mA OUTPUT VOLTAGE PIN (VOUT) VOUT Leakage Current POWER MOSFET ON Resistance @ 25°C THERMAL SHUTDOWN Thermal Shutdown Temperature Thermal Shutdown Temperature Hysteresis Notes 13. Referenced to VIN. 34653 6 Analog Integrated Circuit Device Data Freescale Semiconductor ELECTRICAL CHARACTERISTICS DYNAMIC ELECTRICAL CHARACTERISTICS DYNAMIC ELECTRICAL CHARACTERISTICS Table 4. Dynamic Electrical Characteristics Characteristics noted under conditions 36 V ≤ VPWR ≤ 80 V and - 40°C ≤ TA ≤ 85°C. All voltages are referenced to VIN unless otherwise noted. Characteristic Symbol Min Typ Max Unit t UVAL — 1.0 — ms t OVAL — 1.0 — ms t DISAL — 1.0 — ms Short Circuit Protection Delay t SCPD — — 10 µs Overcurrent Limit Filter Time t OCFT — 100 — µs t OC — 3.0 — ms UNDERVOLTAGE CONTROL Undervoltage Active to Gate Low Filter Time OVERVOLTAGE CONTROL Overvoltage Active to Gate Low Filter Time DISABLE INPUT CONTROL PIN (DISABLE) (14) DISABLE Active to Gate Low Filter Time CURRENT LIMIT CONTROL PINS (ILIM, ICHG) Overcurrent Limit Regulation Time ICHG Rise Time t ICHGR ms Default — 1.0 — Adjustable with an External Capacitor 1.0 — — 10 28 46 130 200 270 POWER GOOD OUTPUT PINS (PG, PG) (15) Power Good Output Delay Time, from Power MOSFET Enhancement to PG and PG Asserted t PG ms FAULT TIMER Start-Up and Retry Delay Timer Default t TIMER ms Notes 14. Referenced to VPWR. 15. Referenced to VIN. 34653 Analog Integrated Circuit Device Data Freescale Semiconductor 7 FUNCTIONAL DESCRIPTION INTRODUCTION FUNCTIONAL DESCRIPTION INTRODUCTION Most telecom and data transfer networks require that circuit boards be inserted and removed from the system without powering down the entire system. When a circuit board is inserted into or removed from a live backplane, the filter or bypass capacitors at the input of the board’s power module or switching power supply can cause large transient currents when being charged or discharged. These currents can cause severe and permanent damage to the boards, thus making the system unstable. Figure 4 displays the inrush current to the filter capacitor if a hot swap device is absent. The inrush current reached an unsafe value of more than 55 A. voltages in a controlled manner and regulating the inrush current to a user-programmable limit, thus allowing the system to safely stabilize (see Figure 5). The 34653 provides protection against overcurrent, undervoltage, overvoltage, and overtemperature. Furthermore, it protects the system from short circuits. Figure 5. Circuit Board Insertion With the Hot Swap Device, Inrush Current Limited Figure 4. Circuit Board Insertion Without a Hot Swap Device, Inrush Current Not Limited The 34653 is an integrated negative voltage hot swap controller with an internal Power MOSFET. The 34653 resides on the plug-in boards and allows the boards to be safely inserted or removed by powering up the supply By integrating the control circuitry and the Power MOSFET switch into a space-efficient package, the 34653 offers a complete, cost-effective, and simple solution that takes much less board space than a similar part with an external Power MOSFET requires. The 34653 can be used in - 48 V telecom and networking systems, servers, electronic circuit breakers, - 48 V distributed power systems, negative power supply control, and central office switching. FUNCTIONAL PIN DESCRIPTION NEGATIVE SUPPLY INPUT VOLTAGE (VIN) This is the most negative power supply input. All pins except DISABLE, PG, and PG are referenced to this input. POWER GOOD OUTPUT (ACTIVE HIGH) (PG) The PG pin is the active high power good output signal that is used to enable or disable a load. This signal goes active after a successful power-up sequence and stays active as long as the device is in normal operation and is not experiencing any faults. The signal is deactivated under the following conditions: • Power is turned off. • The device is disabled for more than 1.0 ms. • The device exceeded its thermal shutdown threshold for more than 12 µs. • The device is in overvoltage or undervoltage mode for more than 1.0 ms. • Load current exceeded the overcurrent limit for more than 3.0 ms. This pin is referenced to VIN. 34653 8 Analog Integrated Circuit Device Data Freescale Semiconductor FUNCTIONAL DESCRIPTION FUNCTIONAL PIN DESCRIPTION POWER GOOD OUTPUT (ACTIVE LOW) PG DISABLE INPUT CONTROL (DISABLE) The PG pin is the active low power good output signal that is used to enable or disable a load. This signal goes active after a successful power-up sequence and stays active as long as the device is in normal operation and is not experiencing any faults. The signal is deactivated under the following conditions: The DISABLE pin is used to easily disconnect or connect the load from the main power line by disabling or enabling the 34653. It can also be used to reset the fault conditions that cause a “Power No Good” signal. If left open or connected to VPWR, the DISABLE pin is inactive and the device is enabled. If a positive voltage (above VPWR) or a negative voltage (below VPWR) is applied to DISABLE, it is active and the device is disabled. The disable function has a 1.0 ms filter timer. This pin is referenced to VPWR. • Power is turned off. • The device is disabled for more than 1.0 ms. • The device exceeded its thermal shutdown threshold for more than 12 µs. • The device is in overvoltage or undervoltage mode for more than 1.0 ms. • Load current exceeded the overcurrent limit for more than 3.0 ms. This pin is referenced to VIN. OUTPUT VOLTAGE (VOUT) The VOUT pin is the drain of the internal Power MOSFET and supplies a current-limited voltage to the load. The load connects between the VOUT and VPWR pins. POSITIVE SUPPLY VOLTAGE INPUT (VPWR) The VPWR pin is the most-positive power supply input. The load connects between the VPWR and VOUT pins. CURRENT LIMIT CONTROL (ILIM) The ILIM pin is used to set the overcurrent limit during normal operation. This pin can be left unconnected for a default overcurrent limit value of 1.0 A or the user can connect an external resistor between the ILIM and VIN pins to set the overcurrent limit value. This value can vary between 0.15 A and 1.25 A. The overcurrent detection circuit has a 100 µs filter timer. CHARGING CURRENT LIMIT CONTROL (ICHG) The ICHG pin is used to set the current limit that is used to charge the load’s input capacitor, hence limiting the inrush current to a known constant value. This pin can be left unconnected for a default charging current limit value of 0.1 A and a default ICHG rise time of 1.0 ms. Or the user can connect an external resistor between the ICHG and VIN pins to set the current limit value between 0.05 A and 0.5 A and an external capacitor to increase the ICHG rise time. The recommended maximum rise time is 10 ms. 34653 Analog Integrated Circuit Device Data Freescale Semiconductor 9 FUNCTIONAL DEVICE OPERATION OPERATIONAL MODES FUNCTIONAL DEVICE OPERATION OPERATIONAL MODES START-UP SEQUENCE When power is first applied to the 34653 by connecting the VIN pin to the negative voltage rail and the VPWR pin to the positive voltage rail, the 34653 keeps the Power MOSFET turned off, deactivates the power good output signals, and resets the retry counter. If the device is disabled, no further activities will occur and power-up would not start. If the device is enabled, it starts to establish an internally regulated supply voltage required for the internal circuitry. The Power MOSFET will stay off until the start of the charging process. After the Power-ON Reset (POR) and once the Undervoltage Lockout (UVLO) threshold is cleared, the 34653 checks for external components on two pins — ILIM and ICHG —to set the levels of the Overcurrent Limit and the Charging Current Limit, respectively. The device then initiates the start-up timer (Point A in Figure 6) and checks for the start-up conditions (see next paragraph). The duration of the timer is a default value. For undervoltage and overvoltage faults during power up the 34652 retries infinitely until normal input voltage is attained. If the die temperature ever increased beyond the thermal shutdown threshold or the device is disabled, then the start-up timer resets and the retry counter increments. If after 10 retries the die temperature is still high and the device is still disabled, the 34652 will not retry again and the power in the device must be recycled or the device must be disabled to reset the retry counter. Start-Up Conditions The start-up conditions are as follows: • Input voltage is below the overvoltage turn-off threshold. This threshold is a default. • Input voltage is above the undervoltage turn-off threshold. This threshold is a default. • Die temperature is less than the thermal shutdown temperature. • Device is enabled. If the start-up conditions are satisfied for a time equal to the length of the start-up timer and the retry counter is less than or equal to 10, the device starts to turn on the Power MOSFET gradually to control the inrush current that charges up the load capacitor to eventually switch on the load (Point B in Figure 6). Charging Process When charging a capacitor from a fixed voltage source, a definite amount of energy will be dissipated in the control circuit, no matter what the control algorithm is. This energy is equal to the energy transferred to the capacitor — ½ CV 2. With this in mind, the Power MOSFET in the 34653 cannot absorb this pulse of energy instantaneously, so the pulse must be dissipated over time. To limit the peak power dissipation in the Power MOSFET and to spread out the duration of the energy dissipation in the Power MOSFET, the circuit uses a two-level current approach to controlling the inrush current and switching on the load as explained in the following paragraphs. When the Power MOSFET is turned on, the current limit is set gradually from 0 A to ICHG (between Points A and B in Figure 7). The low charging current value and the gradual rise time of ICHG are either defaults or they can be user programmable (2.0 ms rise time in the example in Figure 7). The low charging current value of ICHG is intended to limit the temperature increase during the load capacitor charging process, and the gradual rise to ICHG is to prevent transient dips in the input voltage due to sharp increases in the current. This prevents the input voltage from drooping due to current steps acting on the input line inductance, and that in turn prevents a premature activation of the UV detection circuit. Figure 6. Start-Up Sequence 34653 10 Analog Integrated Circuit Device Data Freescale Semiconductor FUNCTIONAL DEVICE OPERATION OPERATIONAL MODES NORMAL MODE If one of the start-up conditions (list on page 10) is violated any time from the start of the Power MOSFET enhancement process and thereafter during normal operation, the Power MOSFET turns off and the power good output signals deactivate, disabling the load, and a new timer cycle starts as explained previously. The 34653 also monitors the load current to prevent any overload or short circuit conditions from happening to protect the load from damage. LOAD CURRENT CONTROL When in normal operation mode, the 34653 monitors the load and provides two modes of current control as explained in the paragraphs below. Overcurrent Mode Figure 7. Power MOSFET Turn-On and the Gradual Increase in the Charging Current from 0 A to ICHG (2.0 ms in Example) The ICHG current charges up the load capacitor relatively slowly. When the load capacitor is fully charged, the Power MOSFET reaches its full enhancement, which triggers the current limit detection to change from ICHG to ILIM and the load current to decrease (Point C in Figure 6, page 10). The current spike at Point C in Figure 6 is better displayed in Figure 8. We can see that when the ⎜VOUT - VIN ⎜< 0.5 V, the Power MOSFET fully turns on to reach its full enhancement, charging the capacitor an additional 0.5 V with a higher current value that quickly ramps down. This eliminates the need for a current slew rate control because the hazard for a voltage change is less than 0.5 V. The power good output signals activate after a 20 ms delay (Point D in Figure 6), which in turn enables the load. The 34653 is now in normal operation mode and the retry counter resets. The 34653 monitors the load for overcurrent conditions. If the current going through the load becomes larger than the overcurrent limit for longer than the overcurrent limit filter timer of 100 µs, the overcurrent signal is asserted and the gate of the Power MOSFET is discharged to try to regulate the current at the ILIM value (Point A in Figure 9). The 34653 is in overcurrent mode for 3.0 ms. If after a 3.0 ms filter timer the device is still in overcurrent mode, the device turns off the Power MOSFET and deactivates the power good output signals (Point B in Figure 9). The 34653 then initiates another start-up timer and goes back through the enhancement process. If during the 3.0 ms timer the fault was cleared, then the 34653 goes back to the normal operation mode and the power good output signals stay activated as shown in Figure 10. This way the device overcomes temporary overcurrent situations and at the same time protects the load from a more severe overcurrent situation. Short Circuit Mode If the current going through the load becomes > 5.0 A, the Power MOSFET is discharged very fast (in less than 10 µs) to try to regulate the current at the ILIM value, and the 34653 is in the overcurrent mode for 3.0 ms. Then it follows the pattern outlined in the Overcurrent Mode paragraph above. Figure 8. Full Power MOSFET Turn-On and Current Spike Associated with It. End of Charging Process 34653 Analog Integrated Circuit Device Data Freescale Semiconductor 11 FUNCTIONAL DEVICE OPERATION OPERATIONAL MODES Figure 9. Overcurrent Mode for More Than 3.0 ms Figure 11. Disabling and Enabling the 34653 Figure 12 demonstrates that the 34653 must be enabled for the length of the start-up timer to start turning on the Power MOSFET. After the fourth disable signal, the 34653 was enabled for the length of the start-up timer. And because the retry counter is less than 10, the 34653 turns on the Power MOSFET and starts the charging process (refer to Charging Process, pages 10–11). Figure 10. Overcurrent Mode for Less Than 3.0 ms DISABLING AND ENABLING THE 34653 When a negative voltage (< 1.8 V below VPWR) is applied to the DISABLE pin for more than 1.0 ms (Point A in Figure 11), the 34653 is disabled, the Power MOSFET turns off, and the power good output signals deactivate. The 34653 stays in this state until the voltage on the DISABLE pin is brought to within ± 1.2 V of VPWR for more than 1.0 ms to enable the device (Point B in Figure 11). Then a new start-up sequence initiates as described on page 10. Applying a positive voltage (> 1.8 V above VPWR) would also disable the 34653 in the same manner. Figure 12. Start-Up Timer Versus Disable BOARD REMOVAL When the board is removed, its power ramps down. As soon as the 34653’s input voltage reaches the undervoltage turn-off threshold, the undervoltage detection circuit activates and the Power MOSFET turns off for having violated one of the start-up conditions (list on page 10). 34653 12 Analog Integrated Circuit Device Data Freescale Semiconductor FUNCTIONAL DEVICE OPERATION OPERATIONAL MODES STATE MACHINE Figure 13 is a representation of the 34653 behavior in different modes of operation. Temp > 160°C Filter = 12 µs Temp < 135°C Filter = 12 µs Thermal Shutdown MOSFET → OFF PG = 0 Start-Up Conditions • Thermal Shutdown < 160°C • DISABLE = 0 N=N+1 • VPWR < VOV(OFF) VPWR > VOV(OFF) • VPWR > VUV(OFF) VPWR < VOV(ON) Filter = t TIMER Filter = 1.0 ms Filter = 1.0 ms Overvoltage N > 10 MOSFET → OFF PG = 0 VPWR < VUV(OFF) Filter = 1.0 ms VPWR > VUV(ON) Filter = 1.0 ms Undervoltage MOSFET → OFF PG = 0 Charging Mode Retry Fault STOP Pass PG Check Toggle DISABLE or cycle Power Off then On to clear fault Power Good Check If ILOAD < ILIM and VDS < 500 mV for 20 ms Overcurrent for > 3.0 ms ILOAD > ILIM for 100 µs Normal Operation Overcurrent Mode PG = 1 Filter = 3.0 ms N=0 ILOAD < ILIM - ILIMHY A signal “set” is generated to check resistors on UV, ILIM, ICHG, and TIMER pins and 128 µs later the OV pin Power Off MOSFET → OFF PG = 0 N=0 POR is generated VDS < 500 mV Fail PG Check Ext. Resistor Check VPWR > VUVLOR Filter = 1.0 ms VPWR < VUVLOF Filter = 1.0 ms N ≤ 10 Turn Off MOSFET → OFF PG = 0 ILOAD > ISHORT DISABLE = 0 Filter = 1.0 ms Short Circuit Detection Fast Gate Discharge < 10 µs DISABLE MOSFET → OFF PG = 0 N=0 POR is generated DISABLE = 1 Filter = 1.0 ms Figure 13. State Diagram 34653 Analog Integrated Circuit Device Data Freescale Semiconductor 13 FUNCTIONAL DEVICE OPERATION PROTECTION AND DIAGNOSIS FEATURES PROTECTION AND DIAGNOSIS FEATURES UNDERVOLTAGE When the input voltage drops below the undervoltage falling threshold for more than 1.0 ms, an undervoltage fault is detected and one of the start-up conditions (list on page 10) is violated. The 34653 turns off the Power MOSFET and deactivates the power good output signals, disabling the load (Point A in Figure 14). The 34653 stays in this state until the input voltage rises above the undervoltage rising threshold for more than 1.0 ms, signaling that the supply voltage is in the normal operation range (Point B in Figure 14). Then a new start-up sequence initiates as described on page 10. The undervoltage detection circuit is also equipped with a 1.0 V hysteresis. Figure 15. Start-Up Timer Protection Against Undervoltage Faults OVERVOLTAGE Figure 14. Undervoltage Fault Followed by a New Start-Up Sequence shows how the 34653 uses the start-up timer to Figure 15 make sure that the input voltage is above the undervoltage falling threshold. The 34653 was in normal operation before Point A. At Point A an undervoltage fault occurs. Then the fault is cleared at Point B, and the 34653 initiates a start-up sequence. Before the end of the start-up timer another undervoltage fault occurs at Point C, so the 34653 does not turn on the Power MOSFET. At Point D the fault is cleared again for the length of the start-up timer and the 34653 turns on the Power MOSFET and starts the charging process (refer to Charging Process, pages 10–11). When the input voltage exceeds the overvoltage rising threshold for more than 1.0 ms, an overvoltage fault is detected and one of the start-up conditions (list on page 10) is violated. The 34653 turns off the Power MOSFET and deactivates the power good output signals, disabling the load. The 34653 stays in this state until the input voltage falls below the overvoltage falling threshold for more than 1.0 ms, signaling that the supply voltage is in the normal operation range. Then a new start-up sequence initiates as described on page 10. The overvoltage detection circuit is also equipped with a 2.0 V hysteresis. The waveforms for an overvoltage fault are shown in Figure 16. Figure 16. Overvoltage Fault 34653 14 Analog Integrated Circuit Device Data Freescale Semiconductor FUNCTIONAL DEVICE OPERATION PROTECTION AND DIAGNOSIS FEATURES The thermal shutdown feature helps protect the internal Power MOSFET and circuitry from excessive temperatures. During start-up and thereafter during normal operation, the 34653 monitors the temperature of the internal circuitry for excessive heat. If the temperature of the device exceeds the thermal shutdown temperature of 160°C, one of the start-up conditions (list on page 10) is violated, and the device turns off the Power MOSFET and deactivates the power good output signals. Until the temperature of the device goes below 135°C, a new start-up sequence will not be initiated. This feature is an advantage over solutions with an external Power MOSFET, because it is not easy for a device with an external MOSFET to sense the temperature quickly and accurately. The thermal shutdown circuit is equipped with a 12 µs filter. Thermal design is critical to proper operation of the 34653. The typical RDS(ON) of the internal Power MOSFET is 0.144 Ω at room ambient temperature and can reach up to 0.251 Ω at high temperatures. The thermal performance of the 34653 can vary depending on many factors, among them: • The ambient operating temperature (TA). • The type of PC board — whether it is single layer or multilayer, has heat sinks or not, etc. — all of which affects the value of the junction-to-ambient thermal resistance (RθJA). • The value of the desired load current (ILOAD). When choosing an overcurrent limit, certain guidelines need to be followed to make sure that if the load current is running close to the overcurrent limit the 34653 does not go into thermal shutdown. It is good practice to set the parameters so that the resulting maximum junction temperature is below the thermal shutdown temperature by a safe margin. Equation 1 can be used to calculate the maximum allowable overcurrent limit based on the maximum desired junction temperature or vice versa. The power dissipation in the device can be calculated as follows: P = I2(LOAD) * RDS(ON) OR P = [ TJ(max) - TA(max)] / RθJA Combining the two equations: I2(LOAD) = [ TJ(max) - TA(max)] / [RθJA * RDS(ON) ] Eq 1 For example: TA(max) = 55°C RθJA = 111 °C/W for a four-layer board RDS(ON) = 0.251 Ω at high temperatures Then: I2(LOAD) = [ TJ(max) - 55 °C] / [111 °C/W * 0.251 Ω] I2(LOAD) = [ TJ(max) - 55 °C] / 27.86 °C / A2 So if the overcurrent limit is 1.0 A, then the maximum junction temperature is 82.86 °C, which is well below the thermal shutdown temperature that is allowed. The previous explanation applies to steady state power when the device is in normal operation. During the charging process, the power is dominated by the I * V across the Power MOSFET. When charging starts, the power in the Power MOSFET rises up and reaches a maximum value of I * V, then quickly ramps back down to the steady state level in a period governed by the size of the load’s input capacitor that is being charged and by the value of the charging current limit ICHG. In this case the instantaneous power dissipation is much higher than the steady state case, but it is on for a very short time. For example: ICHG = 100 mA, the default value CLOAD = 400 µF, a very large capacitor VPWR = 80 V, worst case Then: The power pulse magnitude = ICHG * VPWR = 8.0 W The power pulse duration = CLOAD * VPWR / ICHG = 320 ms Figure 17 displays the temperature profile of the device under the instantaneous power pulse during the charging process. Table 5 depicts thermal resistance values for different board configurations. 70.0 Temperature Rise (°C) Temperature Rise (°C) Temperature Rise Temperature Rise THERMAL SHUTDOWN 60.0 50.0 40.0 30.0 20.0 10.0 0.0 0.000 0.050 0.100 0.150 0.200 0.250 0.300 0.350 Time (sec) Time (sec) Figure 17. Instantaneous Temperature Rise of an 8.0 W Power Pulse that Decreases Linearly at End of a 320 ms Period 34653 Analog Integrated Circuit Device Data Freescale Semiconductor 15 FUNCTIONAL DEVICE OPERATION PROTECTION AND DIAGNOSIS FEATURES Table 5. Thermal Resistance Data Type Condition Symbol Value Unit RθJA 167 °C/W RθJMA 115 °C/W Junction to Ambient Single-layer board (1s), per JEDEC jesd51-2 with board (JESD51-3) horizontal Junction to Ambient Four-layer board (2s2p), per JEDEC JESD51-2 with board (JESD51-3) horizontal Junction to Ambient Single-layer board with a 300 mm2 radiator pad on its top surface, not standard JEDEC – 145 °C/W Junction to Ambient Single-layer board with a 600 mm2 radiator pad on its top surface, not standard JEDEC – 143 °C/W Junction to Ambient Four-layer board with a via for each thermal lead, not standard JEDEC – 111 °C/W Junction to Ambient Four-layer board with a 300 mm2 radiator pad on its top surface and a full array of vias between radiator pad and top surface, not standard JEDEC – 107 °C/W Junction to Ambient Four-layer board with a 600 mm2 radiator pad on its top surface and a full array of vias between radiator pad and top surface, not standard JEDEC – 107 °C/W Junction to Board Thermal resistance between die and board per JEDEC JESD51-8 RθJB 62 °C/W Junction to Case Thermal resistance between die and case top RθJC 57 °C/W Temperature difference between package top and junction per JEDEC JESD51-2 ΨJT 18 °C/W Junction to Package Top 34653 16 Analog Integrated Circuit Device Data Freescale Semiconductor TYPICAL APPLICATIONS TYPICAL APPLICATIONS GND 44 kΩ Live Backplane VPWR PG PG VOUT VIN ICHG ILIM 33653 44 kΩ VPWR DISABLE PG Enable/Enable CLOAD VOUT VIN DC/DC Converter RILIM ILIM RICHG ICHG CICHG -48 V Application Dependent PG Figure 19. Typical Application Diagram with External Components Necessary to Program the Device UNDERVOLTAGE AND OVERVOLTAGE DETECTION PLUG-IN CARD 33653 PLUG-IN CARD GND Live Backplane The 34653 resides on the plug-in board (see Figures 18 and 19), allowing the board to be safely inserted or removed without damaging electrical equipment. The 34653 can be operated with no external components other than the power good output signal pull-up resistor if the default mode was selected for all the programmable features. This is one of the great advantages of the 34653: it operates with minimal user interface and minimal external component count and still offers complete hot swapping functionality with all the necessary protection features, from undervoltage/ overvoltage detection, to current limiting, to short circuit protection and power good output signaling. The default values were chosen to be sufficient for many standard applications. Figure 18 is a typical application diagram depicting the default mode and using the power good output signal pullup resistor. Refer to the static and dynamic electrical characteristics tables on pages 5 through 7 for the various default values. Application Dependent Enable/Enable CLOAD DC/DC Converter -48 V Figure 18. Typical Application Diagram with Default Settings and Minimal External Components The 34653 can be also programmed for different values of the Overcurrent Limit and the Charging Current Limit using external components connected to the device. Figure 19 shows the 34653 with the required external components that allow access to all programmable features in the device. The 34653 monitors the input voltage to ensure that it is within the operating range and that there are no overvoltage or undervoltage conditions, and to quickly turn off the Power MOSFET if there are. Internal comparators connected to an internal resistor divider between the VPWR and VIN input pins compare the supply voltages with a reference voltage. The typical default values of 37 V for the UV turn-off threshold (falling threshold) and 78 V for the OV turn-off threshold (rising threshold) will give a typical operating range of 38 V to 76 V. This range is suitable for telecom industry standards. When the device passes the UVLO threshold, it uses the UV/OV detection circuits to check the input supply levels before turning on the Power MOSFET during the start-up Timer delay and thereafter. As long as the voltage is above the undervoltage falling threshold and below the overvoltage rising threshold, the supply is within operating range and the Power MOSFET is allowed to turn on and stay on. If the input voltage falls below its undervoltage falling threshold or rises above its overvoltage rising threshold, then one of the startup conditions (list on page 10) is violated and the Power MOSFET turns off, the power good signal deactivates, and a new start-up timer initiates. The undervoltage and overvoltage detection circuits are equipped with a 1.0 ms filter to filter out momentary input supply dips. TIMER The Timer function on the 34653 provides the time base used to generate the timing sequences at start-up. The same timer controls the retry delay when the device experiences any fault. The Timer function has a default timer value of 34653 Analog Integrated Circuit Device Data Freescale Semiconductor 17 TYPICAL APPLICATIONS 200 ms. During start-up and if any fault occurred, this timer value is used when initiating a start-up sequence. POWER GOOD OUTPUT SIGNALS The power good pins PG and PG are output pins that are used to directly enable a power module load. The device has active high and active low power good output signals. Choosing which power good active signal depends on the Enable signal requirement of the load. This feature allows the 34653 to adapt to different applications and a wide variety of loads. The power good output signal is active if the Power MOSFET is fully enhanced and the device is in normal operation. The signal goes active after a typical 20 ms delay. The signal deactivates if one of the following occurs: • Power is turned off. • The device is disabled for more than 1.0 ms. • The device exceeded its thermal shutdown threshold for more than 12 µs. • The device is in overvoltage or undervoltage mode for more than 1.0 ms. • Load current exceeded the overcurrent limit for more than 3.0 ms. When the power good output signal becomes inactive, it disables the load, protecting it from any faults or damage. These loads are usually DC/ DC converters, depicted in Figure 19, page 17. An LED can also be connected to PG to indicate that the power is good. The PG and PG pins are referenced to VIN and require a pullup resistor connected to VPWR (Figures 18 and 19, page 17). DISABLING AND ENABLING THE 34653 The Disable control input (DISABLE) provides two functions: • External enable /disable control. • Manual resetting of the device and the retry counter after a fault has occurred. Using the DISABLE pin, a user can enable /disable the 34653 device, which facilitates easy access to connect the load to or disconnect it from the main power rail. When power is first applied, the DISABLE pin must be inactive in order for the 34653 to initiate a start-up sequence. If the DISABLE pin is active, the device makes no further steps until the pin is inactive. At any point during the start-up and thereafter during normal operation, if the DISABLE pin is activated, then the retry counter resets, the Power MOSFET turns off and the power good output signals deactivate. The DISABLE circuit is equipped with a 1.0 ms filter to filter out any glitches or transients on the DISABLE input and prevent the Power MOSFET from turning off prematurely. The DISABLE pin is referenced to VPWR . If left open or connected to VPWR, meaning the voltage at the DISABLE pin is between VPWR + 1.2 V and VPWR - 1.2 V, it is inactive and the device is enabled. If a positive voltage (1.8 V above VPWR) or a negative voltage (1.8 V below VPWR) is applied to DISABLE, it is active and the device is disabled. CHARGING CURRENT LIMIT When the device passes the UVLO threshold, it checks if there is any external resistor or external capacitor connected to the ICHG pin. If there is, then it determines the value of the charging current limit value and the charging current limit rise time accordingly. If there is not, it uses the default charging current limit value of 100 mA and rise time of 1.0 ms. Note Users are allowed to connect an external capacitor to ICHG pin only if an external resistor is also connected. During the external components’ check, a capacitor produces an impulse of current and an external resistor will be detected, even it the external resistor is absent. When the Power MOSFET is turned on, the current limit is set gradually from 0 A to ICHG. This current charges up the load capacitor relatively slowly. When the load capacitor is fully charged, the Power MOSFET reaches its full enhancement, which triggers the current limit to change from ICHG to ILIM and the load current to decrease. The power good output signals activate after a 20 ms delay, which in turn enables the load. The 34653 is now in normal operation mode and the retry counter resets. The low charging current value of ICHG is intended to limit the temperature increase during the load capacitor charging process, and the gradual rise to ICHG is to prevent transient dips in the input voltage due to sharp increases in the limit current. This prevents the input voltage from drooping due to current steps acting on the input line inductance, and that in turn prevents a premature activation of the UV detection circuit. Choosing the External Resistor RICHG Value The user can change the value of the charging current limit by adding a resistor (RICHG) between the ICHG and VIN pins, as shown in Figure 19, page 17. The charging current value ranges between 50 mA and 500 mA, with a default value of 100 mA. Table 6 lists examples of RICHG for different values of ICHG and Figure 20 shows a plot of RICHG versus ICHG . It is recommended that the closest 1% standard resistor value to the actual value be chosen. Note Accuracy requirements are application dependent. To calculate the value of the RICHG resistor we use the following equations: ICHG (A) = [ RICHG (kΩ) + 1.4 kΩ] / 335 RICHG (kΩ) = 335 * ICHG (A) - 1.4 kΩ 34653 18 Analog Integrated Circuit Device Data Freescale Semiconductor TYPICAL APPLICATIONS Table 6. RICHG Values for Some Desired ICHG Values ICHG (A) RICHG (kΩ) 0.05 15.35 0.1 32.10 0.15 48.85 0.2 65.60 0.25 82.35 0.3 99.10 0.35 115.85 0.4 135.60 0.45 149.35 0.5 166.10 Choosing the External Capacitor CICHG Value The user can also change the charging current rise time by adding a capacitor (CICHG) between the ICHG and VIN pins, as shown in Figure 19, page 17. The charging current rise time ranges between 1.0 ms (default value) and a recommended maximum of 10 ms. Table 7 lists examples of CICHG for different values of t ICHGR and Figure 21 shows a plot of CICHG versus t ICHGR. To calculate the value of the CICHG capacitor we use the following equation: CICHG(nF) = 1000 * t ICHGR(ms) / [ 3 * RICHG(kΩ) ] Table 7. CICHG Values for Some Desired t ICHGR Values at a Specific ICHG Value t ICHGR (ms) CICHG (nF) ICHG = 0.05 A CICHG (nF) ICHG = 0.1 A CICHG (nF) ICHG = 0.5 A 1.0 21.72 10.38 2.01 2.0 43.43 20.77 4.01 3.0 65.15 31.15 6.02 180 160 RICHG (kohm) (kΩ) RICHG 140 4.0 86.86 41.54 8.03 120 5.0 108.58 51.92 10.03 100 6.0 130.29 62.31 12.04 80 7.0 152.01 72.69 14.05 60 8.0 173.72 83.07 16.05 40 9.0 195.44 93.46 18.06 10 217.16 103.84 20.07 20 0 0 0.1 0.2 0.3 IICHG CHG (A) 0.4 0.5 0.6 220 200 ICHG ICHG = 0.05 A 180 Figure 20. External Resistor (RICHG ) Value Versus Charging Current Limit Value (ICHG) C ICHG (nF) CICHG (nF) 160 140 120 100 ICHG ICHG = 0.1 A 80 60 40 ICHG ICHG = 0.5 A 20 0 0 1 2 3 4 5 6 7 8 9 10 11 t ICHGR (ms) TICHGR (m s) Figure 21. Charging Current External Capacitor (CICHG) Versus Charging Current Rise Time t ICHGR 34653 Analog Integrated Circuit Device Data Freescale Semiconductor 19 TYPICAL APPLICATIONS When in normal operation mode, the 34653 monitors the load and compares (with a hysteresis) the current going through a Sensor MOSFET with a reference current value generated in reference to the current limit value ILIM. If the current going through the Sensor MOSFET becomes larger than the reference current for more than 100 µs, the overcurrent signal is asserted, the gate of the Power MOSFET is discharged fast (in less than 10 µs) to try to regulate the current, and the 34653 is in overcurrent mode for 3.0 ms. If after a 3.0 ms filter time the device is still in overcurrent mode, the device turns off the Power MOSFET and deactivates the power good output signals. The 34653 then initiates another start-up timer and goes back through the enhancement process. If during the 3.0 ms timer the fault was cleared where the load current was less than ILIM minus the hysteresis value, which is 12% of ILIM value, then the 34653 goes back to the normal operation mode and the power good output signals stay activated. This way the device overcomes temporary overcurrent situations and at the same time protects the load from more severe overcurrent situations. When the device passes the UVLO threshold, it checks if there is any external resistor connected to the ILIM pin. If there is, it determines the value of the overcurrent limit. If there is not, it uses the default overcurrent limit value of 1.0 A. It then uses the Sensor MOSFET to monitor the load for any overcurrent conditions during operation as explained in the previous paragraph. Choosing the External Resistor RILIM Value The user can change the current limit by adding a resistor (RILIM) between the ILIM and VIN pins, as shown in Figure 19, page 17. This way the 34653 device is adaptable to different requirements and operating environments. The overcurrent value ranges between 0.15 A and 1.25 A, with a default value of 1.0 A. Table 8 lists examples of RILIM for different values of ILIM and Figure 22 shows a plot of RILIM versus ILIM . It is recommended that the closest 1% standard resistor value to the actual value be chosen. Note Accuracy requirements are application dependent. To calculate the value of the RILIM resistor we use the following equations: ILIM (A) = 129 / [ RILIM (kΩ) + 1.4 kΩ ] RILIM (kΩ) = [ 129 / ILIM (A)] - 1.4 kΩ Table 8. RILIM Values for Some Desired ILIM Values RILIM(kohm)) (kΩ) RILIM OVERCURRENT LIMIT ILIM (A) RILIM (kΩ) 0.15 859.71 0.2 644.43 0.3 429.15 0.4 321.52 0.5 256.93 0.6 213.88 0.7 183.12 0.8 160.06 0.9 142.12 1.0 127.77 1.1 116.02 1.2 106.24 1.25 101.93 900 850 800 750 700 650 600 550 500 450 400 350 300 250 200 150 100 50 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 ILIM (A) ILIM (A) Figure 22. External Resistor (RILIM) Value Versus Current Limit Value (ILIM) SHORT CIRCUIT DETECTION If the current going through the load becomes > 5.0 A, the Power MOSFET is discharged very fast (in less than 10 µs) to try to regulate the current, and the 34653 is in the overcurrent mode for 3.0 ms. Then it follows the pattern outlined in the Overcurrent Limit paragraph above. 34653 20 Analog Integrated Circuit Device Data Freescale Semiconductor TYPICAL APPLICATIONS POWER MOSFET ENERGY CAPABILITY 3500 Estimated for Area =1.7 mm2 400 µF 3000 200 µF 2500 Energy (mJ) Figure 23 shows a projected energy capability of the device’s internal Power MOSFET under a drain-to-source voltage of 82 V and an ambient temperature of 90°C. It is compared to the energy levels required for the capacitive loads of 100 µF, 200 µF, and 400 µF at 80 V for the discharge periods of 16 ms, 32 ms, and 64 ms, respectively. It is clear that the Power MOSFET well exceeds the required energy capability for all three cases with a sufficient margin. For example, the 400 µF capacitor load with a 64 ms discharge time requires an energy capability of about 1540 mJ, which is well below the Power MOSFET capability of about 3500 mJ. As a result to this analysis the 33652 is expected to exceedingly meet all the energy capability requirements for the possible capacitive loads. 100 µF 2000 1500 1000 500 0 0 20 40 60 Time (ms) Figure 23. Projected Energy Capability of the Power MOSFET Compared to the Required Energy Levels of Some Capacitive Loads 34653 Analog Integrated Circuit Device Data Freescale Semiconductor 21 PACKAGING PACKAGING PACKAGE DIMENSIONS Important For the most current revision of the package, visit www.freescale.com and perform a keyword search on the “98A” drawing number below. EF SUFFIX (Pb-Free) 8-PIN SOIC NARROW BODY PLASTIC PACKAGE 98ASB42564B ISSUE U 34653 22 Analog Integrated Circuit Device Data Freescale Semiconductor REVISION HISTORY REVISION HISTORY REVISION DATE DESCRIPTION OF CHANGES 6.0 2/2006 • Changed Document Order No. 7.0 8/2006 • • • Corrected PIN CONNECTIONS on page 3 Updated document to the prevailing Freescale form and style Updated PACKAGE DIMENSIONS on page 22 8.0 2/2007 • • • Added Part Number MCZ34653EF/R2 to Ordering Information Added RoHS logo Removed Peak Package Reflow Temperature During Reflow (solder reflow) parameter from MAXIMUM RATINGS on page 4. Added note Freescale’s Package Reflow capability meets Pb-free requirements for JEDEC standard J-STD-020C. For Peak Package Reflow Temperature and Moisture Sensitivity Levels (MSL), Go to www.freescale.com, search by part number [e.g. remove prefixes/suffixes and enter the core ID to view all orderable parts. (i.e. MC33xxxD enter 33xxx), and review parametrics. on page 4. • 34653 Analog Integrated Circuit Device Data Freescale Semiconductor 23 How to Reach Us: Home Page: www.freescale.com E-mail: [email protected] USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. Alma School Road Chandler, Arizona 85224 +1-800-521-6274 or +1-480-768-2130 [email protected] Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) [email protected] Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1-8-1, Shimo-Meguro, Meguro-ku, Tokyo 153-0064 Japan 0120 191014 or +81 3 5437 9125 [email protected] Asia/Pacific: Freescale Semiconductor Hong Kong Ltd. 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