DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 MPSA42; MPSA43 NPN high-voltage transistors Product specification Supersedes data of 1997 Sep 04 1999 Apr 12 Philips Semiconductors Product specification NPN high-voltage transistors MPSA42; MPSA43 FEATURES PINNING • Low current (max. 100 mA) PIN • High voltage (max. 300 V). 1 collector 2 base 3 emitter APPLICATIONS DESCRIPTION • Video • Telephony • Professional communication equipment. handbook, halfpage1 1 2 3 2 DESCRIPTION NPN high-voltage transistor in a TO-92; SOT54 plastic package. PNP complement: MPSA92. 3 MAM279 Fig.1 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO PARAMETER collector-base voltage CONDITIONS MIN. MAX. UNIT open emitter MPSA42 − 300 V MPSA43 − 200 V MPSA42 − 300 V MPSA43 − 200 V − 6 V collector-emitter voltage open base VEBO emitter-base voltage IC collector current (DC) − 100 mA ICM peak collector current − 200 mA IBM peak base current − 100 mA open collector Ptot total power dissipation − 500 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C 1999 Apr 12 Tamb ≤ 25 °C 2 Philips Semiconductors Product specification NPN high-voltage transistors MPSA42; MPSA43 THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS VALUE UNIT note 1 250 K/W CONDITIONS MIN. thermal resistance from junction to ambient Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER MAX. UNIT collector cut-off current MPSA42 IE = 0; VCB = 200 V − 100 nA MPSA43 IE = 0; VCB = 160 V − 100 nA MPSA42 IC = 0; VEB = 6 V − 100 nA MPSA43 IC = 0; VEB = 4 V − 100 nA IC = 1 mA 25 − IC = 10 mA 40 − IC = 30 mA 40 − emitter cut-off current DC current gain VCE = 10 V; note 1 VCEsat collector-emitter saturation voltage IC = 20 mA; IB = 2 mA; note 1 − 500 mV VBEsat base-emitter saturation voltage IC = 20 mA; IB = 2 mA; note 1 − 900 mV Cc collector capacitance IE = ie = 0; VCB = 20 V; f = 1 MHz − 3 pF − 4 pF 50 − MHz MPSA42 MPSA43 fT transition frequency IC = 10 mA; VCE = 20 V; f = 100 MHz Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. 1999 Apr 12 3 Philips Semiconductors Product specification NPN high-voltage transistors MPSA42; MPSA43 PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3 leads SOT54 c E d A L b 1 e1 2 D e 3 b1 L1 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A b b1 c D d E e e1 L L1(1) mm 5.2 5.0 0.48 0.40 0.66 0.56 0.45 0.40 4.8 4.4 1.7 1.4 4.2 3.6 2.54 1.27 14.5 12.7 2.5 Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT54 1999 Apr 12 REFERENCES IEC JEDEC EIAJ TO-92 SC-43 4 EUROPEAN PROJECTION ISSUE DATE 97-02-28 Philips Semiconductors Product specification NPN high-voltage transistors MPSA42; MPSA43 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1999 Apr 12 5 Philips Semiconductors Product specification NPN high-voltage transistors MPSA42; MPSA43 NOTES 1999 Apr 12 6 Philips Semiconductors Product specification NPN high-voltage transistors MPSA42; MPSA43 NOTES 1999 Apr 12 7 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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