Jiangsu FMMBD4448HAQW Surface mount switching diode array Datasheet

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-06C Plastic-Encapsulate Diode
FMMBD4448HAQW
WBFBP-06C
SURFACE MOUNT SWITCHING DIODE ARRAYS
(2×2×0.5)
unit: mm
DESCRIPTION
Silicon epitaxial planar
Switching Diode
FEATURES
z
Ultra-Small Surface Mount Package
z
Fast Switching Speed
z
High Conductance
1
APPLICATION
For General Purpose Switching Applications, rectifiers
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
FMMBD4448HAQW
Marking:KA5
Maximum Ratings and Electrical Characteristics, Single Diode @TA=25
Parameter
Non-Repetitive Peak reverse voltage
Symbol
Limits
Unit
VRM
100
V
Peak Repetitive peak reverse voltage
VRRM
Working Peak Reverse Voltage
VRWM
80
V
DC Blocking
VR
Voltage
VR(RMS)
57
V
Forward Continuous Current
IFM
500
mA
Average Rectified Output Current
IO
250
mA
RMS Reverse Voltage
Non-Repetitive Peak forward surge current @=1.0µs
4.0
IFSM
@=1.0s
Pd
Power Dissipation
Thermal Resistance Junction to Ambient
Junction temperature
Storage temperature range
A
2.0
150
mW
RθJA
625
℃/W
TJ
150
℃
TSTG
-65 to +150
℃
Electrical Ratings @TA=25℃
Parameter
Symbol
Min.
0.72
V
IF=5mA
VF2
0.855
V
IF=10mA
VF3
1.0
V
IF=100mA
VF4
1.25
V
IF=150mA
IR1
0.1
µA
VR=70V
IR2
25
nA
VR=20V
Capacitance between terminals
CT
3.5
pF
VR=6V,f=1MHz
Reverse Recovery Time
trr
4
ns
VR=6V,IF=5mA
Reverse current
VF1
0.62
Conditions
Unit
IR=100μA
Forward voltage
80
Max.
V
Reverse Breakdown Voltage
VR
Typ.
Typical Characteristics
Symbol
A
A1
b
D
E
D1
E1
e
L
k
z
Dimensions In Millimeters
Min.
Max.
0.450
0.550
0.000
0.100
0.150
0.250
1.900
2.100
1.900
2.100
0.420 REF.
0.420 REF.
0.650 TYP.
0.400 REF.
0.300 REF.
0.500 REF.
Dimensions In Inches
Min.
Max.
0.018
0.022
0.000
0.004
0.006
0.010
0.075
0.083
0.075
0.083
0.017 REF.
0.017 REF.
0.026 TYP.
0.016 REF.
0.012 REF.
0.020 REF.
APPLICATION CIRCUITS
Bridge rectifiers
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