万和兴电子有限公司 www.whxpcb.com AOD2210 200V N-Channel MOSFET General Description Product Summary The AOD2210 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss. This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. VDS ID (at VGS=10V) 200V 18A RDS(ON) (at VGS=10V) < 105mΩ RDS(ON) (at VGS=5V) < 120mΩ 100% UIS Tested 100% Rg Tested TO252 DPAK D Top View Bottom View D D S G G S S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH C TC=25°C Power Dissipation B TA=25°C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Prelim: Sep. 2012 3.0 9 A EAS 4 mJ 100 Steady-State Steady-State W 50 2.5 RθJA RθJC W 1.6 -55 to 175 TJ, TSTG Symbol t ≤ 10s A IAS PDSM TA=70°C A 2.5 PD TC=100°C V 13 IDSM TA=70°C ±20 45 IDM TA=25°C Continuous Drain Current Units V 18 ID TC=100°C Maximum 200 Typ 15 41 1 www.aosmd.com °C Max 20 50 1.5 Units °C/W °C/W °C/W Page 1 of 6 AOD2210 万和兴电子有限公司 www.whxpcb.com Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V 200 1 TJ=55°C Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS，ID=250µA 1.5 ID(ON) On state drain current VGS=10V, VDS=5V 45 ±100 nA 2 2.5 V 87 105 185 225 VGS=5V, ID=16A 93 120 mΩ 1 V 18 A VGS=10V, ID=18A Static Drain-Source On-Resistance TJ=125°C A gFS Forward Transconductance VDS=5V, ID=18A 40 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Units µA 5 IGSS Coss Max V VDS=200V, VGS=0V VGS(th) RDS(ON) Typ VGS=0V, VDS=100V, f=1MHz mΩ S 2065 pF 74 pF 3.8 pF 2.2 3.3 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 27 40 nC Qg(4.5V) Total Gate Charge 12 20 Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=100V, ID=18A 1.1 nC 7 nC 3 nC 8 ns VGS=10V, VDS=100V, RL=5.5Ω, RGEN=3Ω 10 ns 30 ns 4 ns IF=18A, dI/dt=500A/µs 60 Body Diode Reverse Recovery Charge IF=18A, dI/dt=500A/µs 800 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Prelim: Sep. 2012 www.aosmd.com Page 2 of 6 AOD2210 万和兴电子有限公司 www.whxpcb.com TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 30 10V VDS=5V 3.5V 5V 4.5V 20 ID(A) ID (A) 20 10 10 125°C 25°C VGS=3.0V 0 0 0 1 2 3 4 0 5 130 2 3 4 5 Normalized On-Resistance 3.2 110 RDS(ON) (mΩ Ω) 1 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) VGS=5V 90 70 VGS=10V 2.8 VGS=10V ID=18A 2.4 17 5 2 10 =5V 2 1.6 VGS ID=16A 1.2 0.8 50 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 200 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 200 1.0E+02 ID=18A 180 1.0E+01 160 1.0E+00 140 IS (A) RDS(ON) (mΩ Ω) 40 125°C 120 125°C 1.0E-01 25°C 1.0E-02 100 1.0E-03 80 1.0E-04 25°C 60 1.0E-05 2 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 0: Sep. 2012 4 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AOD2210 万和兴电子有限公司 www.whxpcb.com TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 2500 VDS=100V ID=18A Ciss 2000 Capacitance (pF) VGS (Volts) 8 6 4 2 1500 1000 Coss 500 Crss 0 0 0 5 10 15 20 25 Qg (nC) Figure 7: Gate-Charge Characteristics 30 0 20 40 60 80 100 120 140 160 180 200 VDS (Volts) Figure 8: Capacitance Characteristics 300 100.0 TJ(Max)=175°C TC=25°C 10µs 10µs 10.0 100µs RDS(ON) Power (W) ID (Amps) 250 1ms 10ms 1.0 DC 0.1 TJ(Max)=175°C TC=25°C 200 17 5 2 10 150 100 50 0.0 0 0.01 0.1 1 10 VDS (Volts) 100 1000 0.0001 0.001 0.01 0.1 1 0 10 100 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJC=1.5°C/W 1 PD 0.1 Ton Single Pulse T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 0: Sep. 2012 www.aosmd.com Page 4 of 6 AOD2210 万和兴电子有限公司 www.whxpcb.com TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 Power Dissipation (W) IAR (A) Peak Avalanche Current 100 TA=100°C TA=25°C 10 TA=150°C TA=125°C 100 80 60 40 20 1 0 1 10 Time in avalanche, tA (µ µs) Figure 12: Single Pulse Avalanche capability (Note C) 100 0 25 50 75 100 125 150 TCASE (°C) Figure 13: Power De-rating (Note F) 175 10000 20 Power (W) Current rating ID(A) TA=25°C 1000 15 10 17 5 2 10 100 10 5 1 0 1E-05 0 25 50 75 100 125 150 TCASE (°C) Figure 14: Current De-rating (Note F) 0.001 0.1 10 1000 0 18 175 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=50°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev 0: Sep. 2012 www.aosmd.com Page 5 of 6 AOD2210 万和兴电子有限公司 www.whxpcb.com Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev 0: Sep. 2012 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6