Infineon IRFB38N20DPBF Hexfetâ® power mosfet Datasheet

IRFB38N20DPbF
IRFS38N20DPbF
IRFSL38N20DPbF
HEXFET® Power MOSFET
Key Parameters
Applications
 High frequency DC-DC converters
 Plasma Display Panel
Benefits
 Low Gate-to-Drain Charge to Reduce Switching Losses
 Fully Characterized Capacitance Including Effective COSS
to Simplify Design, (See App. Note AN1001)
 Fully Characterized Avalanche Voltage and Current
 Lead-Free
VDS
200
V
VDS(Avalanche) min.
260
V
RDS(on) max @ 10V
54
m
TJ max
175
°C
D
D
D
S
S
D
G
G
G
TO-220AB
D2 Pak
IRFB38N20DPbF IRFS38N20DPbF
G
Gate
Base part number
Package Type
IRFB38N20DPbF
IRFSL38N20DPbF
TO-220
TO-262
IRFS38N20DPbF
D2-Pak
Absolute Maximum Ratings
Symbol
D
Drain
Standard Pack
Form
Quantity
Tube
50
Tube
50
Tube
50
Tape and Reel Left
800
S
D
TO-262 Pak
IRFSL38N20DPbF
S
Source
Orderable Part Number
IRFB38N20DPbF
IRFSL38N20DPbF
IRFS38N20DPbF
IRFS38N20DTRLPbF
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V 
43*
ID @ TC = 100°C
IDM
PD @TA = 25°C
Continuous Drain Current, VGS @ 10V 
Pulsed Drain Current 
Maximum Power Dissipation 
30*
180
3.8
W
PD @TC = 25°C
Maximum Power Dissipation 
300*
W
2.0*
± 30
9.5
-55 to + 175
W/°C
V
V/ns
VGS
dv/dt
TJ
TSTG
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Symbol
RJC
RCS
RJA
RJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient 
Junction-to-Ambient ( PCB Mount, steady state) 
A
°C
300
10 lbf•in (1.1N•m)
Typ.
Max.
Units
–––
0.50
–––
–––
0.47*
–––
62
40
°C/W
* RJC (end of life) for D2Pak and TO-262 = 0.50°C/W. This is the maximum measured value after 1000 temperature
cycles from -55 to 150°C and is accounted for by the physical wear out of the die attach medium.
Notes  through  are on page 2.
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IRFB/S/SL38N20DPbF
Static @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Dynamic @ TJ = 25°C (unless otherwise specified)
gfs
Forward Trans conductance
Qg
Total Gate Charge
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain Charge
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
Coss
Output Capacitance
Coss eff.
Effective Output Capacitance
Min.
200
–––
–––
3.0
–––
–––
–––
–––
Typ. Max. Units
Conditions
–––
–––
V VGS = 0V, ID = 250µA
0.22 ––– V/°C Reference to 25°C, ID = 1mA
––– 0.054
 VGS = 10V, ID = 26A 
–––
5.0
V VDS = VGS, ID = 250µA
–––
25
VDS =200 V, VGS = 0V
µA
–––
250
VDS = 160V,VGS = 0V,TJ =150°C
–––
100
VGS = 30V
nA
-100
VGS = -30V
17
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
60
17
28
16
95
29
47
2900
450
73
3550
180
380
Avalanche Characteristics
Parameter
EAS
IAR
EAR
VDS (Avalanche)
S
VDS = 50V, ID = 26A
ID = 26A
nC VDS = 100V
VGS = 10V 
VDD = 100V
ID =26A
ns
RG= 2.5
VGS = 10V 
VGS = 0V
VDS = 25V
ƒ = 1.0MHz
pF
VGS = 0V, VDS = 1.0V ƒ = 1.0MHz
VGS = 0V, VDS = 160V ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 160V
Min.
–––
–––
–––
260
Single Pulse Avalanche Energy 
Avalanche Current 
Repetitive Avalanche Energy 
Repetitive Avalanche Voltage
Diode Characteristics
Parameter
Continuous Source Current
IS
(Body Diode)
Pulsed Source Current
ISM
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
–––
91
25
42
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min.
Typ.
–––
–––
44
–––
–––
180
–––
–––
–––
–––
160
1.3
1.5
240
2.0
Typ.
–––
–––
390
–––
Max.
460
26
–––
–––
Units
mJ
A
mJ
V
Max. Units
Conditions
MOSFET symbol
showing the
A
integral reverse
p-n junction diode.
V TJ = 25°C,IS = 26A,VGS = 0V 
ns TJ = 25°C ,IF = 26A
C di/dt = 100A/µs 
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
 starting TJ = 25°C, L = 1.3mH, RG = 25, IAS = 26A.
 ISD 26A, di/dt 390A/µs, VDD V(BR)DSS, TJ  175°C.
 Pulse width 300µs; duty cycle  2%.
 Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
 This is only applied to TO-220AB package.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to
application note #AN-994.
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IRFB/S/SL38N20DPbF
1000
100
VGS
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
VGS
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
100
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
10
1
5.0V
300µs PULSE WIDTH
Tj = 25°C
1
10
5.0V
1
300µs PULSE WIDTH
Tj = 175°C
0.1
0.1
0.1
10
0.1
100
1
10
100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig. 2 Typical Output Characteristics
Fig. 1 Typical Output Characteristics
3.5
1000.00
I D = 44A
100.00
T J = 175°C
10.00
VDS = 15V
300µs PULSE WIDTH
1.00
5.0
7.0
9.0
11.0
13.0
VGS, Gate-to-Source Voltage (V)
Fig. 3 Typical Transfer Characteristics
3
15.0
2.5
(Normalized)
T J = 25°C
RDS(on) , Drain-to-Source On Resistance
ID, Drain-to-Source Current  )
3.0
2.0
1.5
1.0
0.5
V GS = 10V
0.0
-60
-40
-20
0
20
40
60
TJ, Junction Temperature
80
100
120
140
160
180
( ° C)
Fig. 4 Normalized On-Resistance
vs. Temperature
2016-5-31
IRFB/S/SL38N20DPbF
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd , Cds
Crss = Cgd
ID = 26A
SHORTED
Coss = Cds + Cgd
10000
C, Capacitance(pF)
12
VGS, Gate-to-Source Voltage (V)
100000
Ciss
1000
Coss
100
Crss
VDS = 160V
10
VDS = 100V
8
6
4
2
0
10
1
10
100
0
1000
10
1000
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
1000.00
10.00
T J = 25°C
1.00
VGS = 0V
60
70
OPERATION IN THIS AREA
LIMITED BY R DS (on)
1.0
1.5
2.0
VSD , Source-toDrain Voltage (V)
Fig. 7 Typical Source-to-Drain Diode
Forward Voltage
100µsec
10
1msec
1
0.1
0.10
0.5
50
100
T J = 175°C
0.0
40
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
100.00
30
QG Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
4
20
2.5
10msec
Tc = 25°C
Tj = 175°C
Single Pulse
1
10
100
1000
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
2016-5-31
IRFB/S/SL38N20DPbF
45
40
ID, Drain Current (A)
35
30
25
20
Fig 10a. Switching Time Test Circuit
15
10
5
0
25
50
75
100
125
150
175
T C , Case Temperature (°C)
Fig 9. Maximum Drain Current vs. Case Temperature
Fig 10b. Switching Time Waveforms
(Z thJC )
1
D = 0.50
0.1
0.20
Thermal Response
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P DM
0.01
t1
t2
Notes:
1. Duty f actor D =
2. Peak T
0.001
0.00001
0.0001
0.001
0.01
t1/ t
2
J = P DM x Z thJC
+T C
0.1
1
t 1, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
5
2016-5-31
IRFB/S/SL38N20DPbF
900
ID
TOP
15V
L
VDS
DRIVER
D.U.T
RG
+
V
- DD
IAS
20V
tp
A
0.01
Fig 12a. Unclamped Inductive Test Circuit
EAS , Single Pulse Avalanche Energy (mJ)
720
BOTTOM
540
360
180
0
25
V(BR)DSS
11A
19A
26A
50
75
100
125
Starting Tj, Junction Temperature
150
175
( °C)
tp
Fig 12c. Maximum Avalanche Energy
vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
Fig 13a. Gate Charge Waveform
6
Fig 13b. Gate Charge Test Circuit
2016-5-31
IRFB/S/SL38N20DPbF
Fig 14. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
7
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IRFB/S/SL38N20DPbF
TO-220AB Package Outline (Dimensions are shown in millimeters (inches))
TO-220AB Part Marking Information
EXAM PLE:
T H IS IS A N IR F 1 0 1 0
LO T C O D E 1789
ASSEM BLED O N W W 19, 2000
IN T H E A S S E M B L Y L IN E "C "
N o t e : "P " in a s s e m b ly lin e p o s it io n
in d ic a t e s "L e a d - F r e e "
IN T E R N A T IO N A L
R E C T IF IE R
LO G O
ASSEM BLY
LO T C O D E
PART NUM BER
D ATE C O D E
YEA R 0 = 2000
W EEK 19
L IN E C
TO-220AB packages are not recommended for Surface Mount Application.
Notes:
1. For an Automotive Qualified version of this part please seehttp://www.infineon.com/product-info/auto/
2. For the most current drawing please refer to Infineon website at http://www.infineon.com/package/
8
2016-5-31
IRFB/S/SL38N20DPbF
D2-Pak (TO-263AB) Package Outline (Dimensions are shown in millimeters (inches))
D2-Pak (TO-263AB) Part Marking Information
THIS IS AN IRF530S WITH
LOT CODE 8024
ASSEMBLED ON WW 02, 2000
IN THE ASSEMBLY LINE "L"
INTERNATIONAL
RECTIFIER
LOGO
PART NUMBER
F530S
DATE CODE
YEAR 0 = 2000
WEEK 02
LINE L
ASSEMBLY
LOT CODE
OR
INTERNATIONAL
RECTIFIER
LOGO
ASSEMBLY
LOT CODE
PART NUMBER
F530S
DATE CODE
P = DESIGNATES LEAD - FREE
PRODUCT (OPTIONAL)
YEAR 0 = 2000
WEEK 02
A = ASSEMBLY SITE CODE
Notes:
1. For an Automotive Qualified version of this part please seehttp://www.infineon.com/product-info/auto/
2. For the most current drawing please refer to Infineon website at http://www.infineon.com/package/
9
2016-5-31
IRFB/S/SL38N20DPbF
TO-262 Package Outline (Dimensions are shown in millimeters (inches)
TO-262 Part Marking Information
EXAMPLE: THIS IS AN IRL3103L
LOT CODE 1789
ASSEMBLED ON WW19, 1997
IN THE ASSEMBLYLINE "C"
INTERNATIONAL
RECTIFIER
LOGO
ASSEMBLY
LOT CODE
PART NUMBER
DATE CODE
YEAR 7 = 1997
WEEK 19
LINE C
OR
INTERNATIONAL
RECTIFIER
LOGO
ASSEMBLY
LOT CODE
PART NUMBER
DATE CODE
P = DESIGNATES LEAD-FREE
PRODUCT (OPTIONAL)
YEAR 7 = 1997
WEEK 19
A = ASSEMBLY SITE CODE
Notes:
1. For an Automotive Qualified version of this part please seehttp://www.infineon.com/product-info/auto/
2. For the most current drawing please refer to Infineon website at http://www.infineon.com/package/
10
2016-5-31
IRFB/S/SL38N20DPbF
D2-Pak (TO-263AB) Tape & Reel Information (Dimensions are shown in millimeters (inches))
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
11.60 (.457)
11.40 (.449)
0.368 (.0145)
0.342 (.0135)
15.42 (.609)
15.22 (.601)
24.30 (.957)
23.90 (.941)
TRL
10.90 (.429)
10.70 (.421)
1.75 (.069)
1.25 (.049)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
60.00 (2.362)
MIN.
26.40 (1.039)
24.40 (.961)
3
30.40 (1.197)
MAX.
4
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
11
2016-5-31
IRFB/S/SL38N20DPbF
Qualification Information†
Qualification Level
TO-220AB
Moisture Sensitivity Level
D2-Pak
TO-262
RoHS Compliant
Industrial
(per JEDEC JESD47F) ††
N/A
MSL1
(per JEDEC J-STD-020D) ††
N/A
Yes
†
Qualification standards can be found at Infineon’s web site www.infineon.com
††
Applicable version of JEDEC standard at the time of product release.
Revision History
Date
5/31/2016
Comments


Updated datasheet with corporate template.
Added disclaimer on last page.
Trademarks of Infineon Technologies AG
µHVIC™, µIPM™, µPFC™, AU‐ConvertIR™, AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, CoolDP™, CoolGaN™, COOLiR™, CoolMOS™, CoolSET™, CoolSiC™,
DAVE™, DI‐POL™, DirectFET™, DrBlade™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™, GaNpowIR™,
HEXFET™, HITFET™, HybridPACK™, iMOTION™, IRAM™, ISOFACE™, IsoPACK™, LEDrivIR™, LITIX™, MIPAQ™, ModSTACK™, my‐d™, NovalithIC™, OPTIGA™,
Op MOS™, ORIGA™, PowIRaudio™, PowIRStage™, PrimePACK™, PrimeSTACK™, PROFET™, PRO‐SIL™, RASIC™, REAL3™, SmartLEWIS™, SOLID FLASH™,
SPOC™, StrongIRFET™, SupIRBuck™, TEMPFET™, TRENCHSTOP™, TriCore™, UHVIC™, XHP™, XMC™
Trademarks updated November 2015
Other Trademarks
All referenced product or service names and trademarks are the property of their respec ve owners.
Edi on 2016‐04‐19
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2016 Infineon Technologies AG.
All Rights Reserved.
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event be regarded as a guarantee of condi ons or
characteris cs (“Beschaffenheitsgaran e”) .
With respect to any examples, hints or any typical
values stated herein and/or any informa on
regarding the applica on of the product, Infineon
Technologies hereby disclaims any and all
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In addi on, any informa on given in this document
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use of the product of Infineon Technologies in
customer’s applica ons.
The data contained in this document is exclusively
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intended applica on and the completeness of the
product informa on given in this document with
respect to such applica on.
12
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(www.infineon.com).
Please note that this product is not qualified
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Due to technical requirements products may
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2016-5-31
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