IRFB38N20DPbF IRFS38N20DPbF IRFSL38N20DPbF HEXFET® Power MOSFET Key Parameters Applications High frequency DC-DC converters Plasma Display Panel Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage and Current Lead-Free VDS 200 V VDS(Avalanche) min. 260 V RDS(on) max @ 10V 54 m TJ max 175 °C D D D S S D G G G TO-220AB D2 Pak IRFB38N20DPbF IRFS38N20DPbF G Gate Base part number Package Type IRFB38N20DPbF IRFSL38N20DPbF TO-220 TO-262 IRFS38N20DPbF D2-Pak Absolute Maximum Ratings Symbol D Drain Standard Pack Form Quantity Tube 50 Tube 50 Tube 50 Tape and Reel Left 800 S D TO-262 Pak IRFSL38N20DPbF S Source Orderable Part Number IRFB38N20DPbF IRFSL38N20DPbF IRFS38N20DPbF IRFS38N20DTRLPbF Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 43* ID @ TC = 100°C IDM PD @TA = 25°C Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation 30* 180 3.8 W PD @TC = 25°C Maximum Power Dissipation 300* W 2.0* ± 30 9.5 -55 to + 175 W/°C V V/ns VGS dv/dt TJ TSTG Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Thermal Resistance Symbol RJC RCS RJA RJA Parameter Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Junction-to-Ambient ( PCB Mount, steady state) A °C 300 10 lbf•in (1.1N•m) Typ. Max. Units ––– 0.50 ––– ––– 0.47* ––– 62 40 °C/W * RJC (end of life) for D2Pak and TO-262 = 0.50°C/W. This is the maximum measured value after 1000 temperature cycles from -55 to 150°C and is accounted for by the physical wear out of the die attach medium. Notes through are on page 2. 1 2016-5-31 IRFB/S/SL38N20DPbF Static @ TJ = 25°C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Dynamic @ TJ = 25°C (unless otherwise specified) gfs Forward Trans conductance Qg Total Gate Charge Qgs Gate-to-Source Charge Qgd Gate-to-Drain Charge td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance Coss Output Capacitance Coss eff. Effective Output Capacitance Min. 200 ––– ––– 3.0 ––– ––– ––– ––– Typ. Max. Units Conditions ––– ––– V VGS = 0V, ID = 250µA 0.22 ––– V/°C Reference to 25°C, ID = 1mA ––– 0.054 VGS = 10V, ID = 26A ––– 5.0 V VDS = VGS, ID = 250µA ––– 25 VDS =200 V, VGS = 0V µA ––– 250 VDS = 160V,VGS = 0V,TJ =150°C ––– 100 VGS = 30V nA -100 VGS = -30V 17 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 60 17 28 16 95 29 47 2900 450 73 3550 180 380 Avalanche Characteristics Parameter EAS IAR EAR VDS (Avalanche) S VDS = 50V, ID = 26A ID = 26A nC VDS = 100V VGS = 10V VDD = 100V ID =26A ns RG= 2.5 VGS = 10V VGS = 0V VDS = 25V ƒ = 1.0MHz pF VGS = 0V, VDS = 1.0V ƒ = 1.0MHz VGS = 0V, VDS = 160V ƒ = 1.0MHz VGS = 0V, VDS = 0V to 160V Min. ––– ––– ––– 260 Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Repetitive Avalanche Voltage Diode Characteristics Parameter Continuous Source Current IS (Body Diode) Pulsed Source Current ISM (Body Diode) VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ton Forward Turn-On Time ––– 91 25 42 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Min. Typ. ––– ––– 44 ––– ––– 180 ––– ––– ––– ––– 160 1.3 1.5 240 2.0 Typ. ––– ––– 390 ––– Max. 460 26 ––– ––– Units mJ A mJ V Max. Units Conditions MOSFET symbol showing the A integral reverse p-n junction diode. V TJ = 25°C,IS = 26A,VGS = 0V ns TJ = 25°C ,IF = 26A C di/dt = 100A/µs Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. starting TJ = 25°C, L = 1.3mH, RG = 25, IAS = 26A. ISD 26A, di/dt 390A/µs, VDD V(BR)DSS, TJ 175°C. Pulse width 300µs; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. This is only applied to TO-220AB package. When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994. 2 2016-5-31 IRFB/S/SL38N20DPbF 1000 100 VGS 15V 12V 10V 8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V VGS 15V 12V 10V 8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V 100 TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP 10 1 5.0V 300µs PULSE WIDTH Tj = 25°C 1 10 5.0V 1 300µs PULSE WIDTH Tj = 175°C 0.1 0.1 0.1 10 0.1 100 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig. 2 Typical Output Characteristics Fig. 1 Typical Output Characteristics 3.5 1000.00 I D = 44A 100.00 T J = 175°C 10.00 VDS = 15V 300µs PULSE WIDTH 1.00 5.0 7.0 9.0 11.0 13.0 VGS, Gate-to-Source Voltage (V) Fig. 3 Typical Transfer Characteristics 3 15.0 2.5 (Normalized) T J = 25°C RDS(on) , Drain-to-Source On Resistance ID, Drain-to-Source Current ) 3.0 2.0 1.5 1.0 0.5 V GS = 10V 0.0 -60 -40 -20 0 20 40 60 TJ, Junction Temperature 80 100 120 140 160 180 ( ° C) Fig. 4 Normalized On-Resistance vs. Temperature 2016-5-31 IRFB/S/SL38N20DPbF VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd , Cds Crss = Cgd ID = 26A SHORTED Coss = Cds + Cgd 10000 C, Capacitance(pF) 12 VGS, Gate-to-Source Voltage (V) 100000 Ciss 1000 Coss 100 Crss VDS = 160V 10 VDS = 100V 8 6 4 2 0 10 1 10 100 0 1000 10 1000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 1000.00 10.00 T J = 25°C 1.00 VGS = 0V 60 70 OPERATION IN THIS AREA LIMITED BY R DS (on) 1.0 1.5 2.0 VSD , Source-toDrain Voltage (V) Fig. 7 Typical Source-to-Drain Diode Forward Voltage 100µsec 10 1msec 1 0.1 0.10 0.5 50 100 T J = 175°C 0.0 40 Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 100.00 30 QG Total Gate Charge (nC) VDS , Drain-to-Source Voltage (V) 4 20 2.5 10msec Tc = 25°C Tj = 175°C Single Pulse 1 10 100 1000 VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area 2016-5-31 IRFB/S/SL38N20DPbF 45 40 ID, Drain Current (A) 35 30 25 20 Fig 10a. Switching Time Test Circuit 15 10 5 0 25 50 75 100 125 150 175 T C , Case Temperature (°C) Fig 9. Maximum Drain Current vs. Case Temperature Fig 10b. Switching Time Waveforms (Z thJC ) 1 D = 0.50 0.1 0.20 Thermal Response 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) P DM 0.01 t1 t2 Notes: 1. Duty f actor D = 2. Peak T 0.001 0.00001 0.0001 0.001 0.01 t1/ t 2 J = P DM x Z thJC +T C 0.1 1 t 1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 5 2016-5-31 IRFB/S/SL38N20DPbF 900 ID TOP 15V L VDS DRIVER D.U.T RG + V - DD IAS 20V tp A 0.01 Fig 12a. Unclamped Inductive Test Circuit EAS , Single Pulse Avalanche Energy (mJ) 720 BOTTOM 540 360 180 0 25 V(BR)DSS 11A 19A 26A 50 75 100 125 Starting Tj, Junction Temperature 150 175 ( °C) tp Fig 12c. Maximum Avalanche Energy vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Fig 13a. Gate Charge Waveform 6 Fig 13b. Gate Charge Test Circuit 2016-5-31 IRFB/S/SL38N20DPbF Fig 14. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs 7 2016-5-31 IRFB/S/SL38N20DPbF TO-220AB Package Outline (Dimensions are shown in millimeters (inches)) TO-220AB Part Marking Information EXAM PLE: T H IS IS A N IR F 1 0 1 0 LO T C O D E 1789 ASSEM BLED O N W W 19, 2000 IN T H E A S S E M B L Y L IN E "C " N o t e : "P " in a s s e m b ly lin e p o s it io n in d ic a t e s "L e a d - F r e e " IN T E R N A T IO N A L R E C T IF IE R LO G O ASSEM BLY LO T C O D E PART NUM BER D ATE C O D E YEA R 0 = 2000 W EEK 19 L IN E C TO-220AB packages are not recommended for Surface Mount Application. Notes: 1. For an Automotive Qualified version of this part please seehttp://www.infineon.com/product-info/auto/ 2. For the most current drawing please refer to Infineon website at http://www.infineon.com/package/ 8 2016-5-31 IRFB/S/SL38N20DPbF D2-Pak (TO-263AB) Package Outline (Dimensions are shown in millimeters (inches)) D2-Pak (TO-263AB) Part Marking Information THIS IS AN IRF530S WITH LOT CODE 8024 ASSEMBLED ON WW 02, 2000 IN THE ASSEMBLY LINE "L" INTERNATIONAL RECTIFIER LOGO PART NUMBER F530S DATE CODE YEAR 0 = 2000 WEEK 02 LINE L ASSEMBLY LOT CODE OR INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE PART NUMBER F530S DATE CODE P = DESIGNATES LEAD - FREE PRODUCT (OPTIONAL) YEAR 0 = 2000 WEEK 02 A = ASSEMBLY SITE CODE Notes: 1. For an Automotive Qualified version of this part please seehttp://www.infineon.com/product-info/auto/ 2. For the most current drawing please refer to Infineon website at http://www.infineon.com/package/ 9 2016-5-31 IRFB/S/SL38N20DPbF TO-262 Package Outline (Dimensions are shown in millimeters (inches) TO-262 Part Marking Information EXAMPLE: THIS IS AN IRL3103L LOT CODE 1789 ASSEMBLED ON WW19, 1997 IN THE ASSEMBLYLINE "C" INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE PART NUMBER DATE CODE YEAR 7 = 1997 WEEK 19 LINE C OR INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE PART NUMBER DATE CODE P = DESIGNATES LEAD-FREE PRODUCT (OPTIONAL) YEAR 7 = 1997 WEEK 19 A = ASSEMBLY SITE CODE Notes: 1. For an Automotive Qualified version of this part please seehttp://www.infineon.com/product-info/auto/ 2. For the most current drawing please refer to Infineon website at http://www.infineon.com/package/ 10 2016-5-31 IRFB/S/SL38N20DPbF D2-Pak (TO-263AB) Tape & Reel Information (Dimensions are shown in millimeters (inches)) TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) FEED DIRECTION 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 11.60 (.457) 11.40 (.449) 0.368 (.0145) 0.342 (.0135) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 4.72 (.136) 4.52 (.178) 16.10 (.634) 15.90 (.626) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 60.00 (2.362) MIN. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 11 2016-5-31 IRFB/S/SL38N20DPbF Qualification Information† Qualification Level TO-220AB Moisture Sensitivity Level D2-Pak TO-262 RoHS Compliant Industrial (per JEDEC JESD47F) †† N/A MSL1 (per JEDEC J-STD-020D) †† N/A Yes † Qualification standards can be found at Infineon’s web site www.infineon.com †† Applicable version of JEDEC standard at the time of product release. Revision History Date 5/31/2016 Comments Updated datasheet with corporate template. Added disclaimer on last page. Trademarks of Infineon Technologies AG µHVIC™, µIPM™, µPFC™, AU‐ConvertIR™, AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, CoolDP™, CoolGaN™, COOLiR™, CoolMOS™, CoolSET™, CoolSiC™, DAVE™, DI‐POL™, DirectFET™, DrBlade™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™, GaNpowIR™, HEXFET™, HITFET™, HybridPACK™, iMOTION™, IRAM™, ISOFACE™, IsoPACK™, LEDrivIR™, LITIX™, MIPAQ™, ModSTACK™, my‐d™, NovalithIC™, OPTIGA™, Op MOS™, ORIGA™, PowIRaudio™, PowIRStage™, PrimePACK™, PrimeSTACK™, PROFET™, PRO‐SIL™, RASIC™, REAL3™, SmartLEWIS™, SOLID FLASH™, SPOC™, StrongIRFET™, SupIRBuck™, TEMPFET™, TRENCHSTOP™, TriCore™, UHVIC™, XHP™, XMC™ Trademarks updated November 2015 Other Trademarks All referenced product or service names and trademarks are the property of their respec ve owners. Edi on 2016‐04‐19 Published by Infineon Technologies AG 81726 Munich, Germany © 2016 Infineon Technologies AG. All Rights Reserved. Do you have a ques on about this document? Email: [email protected] Document reference ifx1 IMPORTANT NOTICE The informa on given in this document shall in no event be regarded as a guarantee of condi ons or characteris cs (“Beschaffenheitsgaran e”) . With respect to any examples, hints or any typical values stated herein and/or any informa on regarding the applica on of the product, Infineon Technologies hereby disclaims any and all warran es and liabili es of any kind, including without limita on warran es of non‐infringement of intellectual property rights of any third party. In addi on, any informa on given in this document is subject to customer’s compliance with its obliga ons stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applica ons. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended applica on and the completeness of the product informa on given in this document with respect to such applica on. 12 For further informa on on the product, technology, delivery terms and condi ons and prices please contact your nearest Infineon Technologies office (www.infineon.com). Please note that this product is not qualified according to the AEC Q100 or AEC Q101 documents of the Automo ve Electronics Council. WARNINGS Due to technical requirements products may contain dangerous substances. For informa on on the types in ques on please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a wri en document signed by authorized representa ves of Infineon Technologies, Infineon Technologies’ products may not be used in any applica ons where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 2016-5-31