ON NSF2250WT1 Npn silicon oscillator and mixer transistor Datasheet

NSF2250WT1
NPN Silicon Oscillator and
Mixer Transistor
The NSF2250WT1 NPN silicon epitaxial bipolar transistor is
intended for use in general purpose UHF oscillator and mixer
applications. It is suitable for automotive keyless entry and TV tuner
designs.
The device features stable oscillation and small frequency drift
during changes in the supply voltage and over the ambient temperature
range.
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COLLECTOR
3
Features
•
•
•
•
1
BASE
High Gain Bandwidth Product: fT = 2000 MHz Minimum
Tightly Controlled hFE Range: hFE = 120 to 250
Low Feedback Capacitance: CRE = 0.45 pF Typical
Pb−Free Package is Available
2
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Units
Collector to Base Voltage
VCBO
30
V
Collector to Emitter Voltage
VCEO
15
V
Emitter to Base Voltage
VEBO
3.0
V
IC
50
mA
Collector Current
Electrostatic Discharge
ESD
1
SOT−323/SC−70
CASE 419
STYLE 3
HBM − Class 1C
MM − Class A
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
TA = 25°C
Derate above 25°C
Symbol
Max
Unit
PD
202 (Note 1)
310 (Note 2)
1.6 (Note 1)
2.5 (Note 2)
mW
3M M G
G
mW/°C
Thermal Resistance, Junction-to-Ambient
RqJA
618 (Note 1)
403 (Note 2)
°C/W
Thermal Resistance, Junction-to-Lead
RqJL
280 (Note 1)
332 (Note 2)
°C/W
TJ, Tstg
−55 to +150
°C
Junction and Storage Temperature
Range
MARKING DIAGRAM
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ Minimum Pad
2. FR−4 @ 1.0 x 1.0 inch Pad
1
3M = Specific Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending upon
manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping †
NSF2250WT1
SOT−323
3000/Tape & Reel
NSF2250WT1G
SOT−323
(Pb−Free)
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2006
April, 2006 − Rev. 5
1
Publication Order Number:
NSF2250WT1/D
NSF2250WT1
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic
Symbol
Collector Cutoff Current
VCB = 12 V, IE = 0
ICBO
DC Current Gain
VCE = 10 V, IC = 5.0 mA
hFE
Collector Saturation Voltage
IC = 10 mA, IB = 1.0 mA
VCE(sat)
Gain Bandwidth Product
VCE = 3 V, IE = −5.0 mA
fT
Output Capacitance
VCB = 3 V, IE = 0 mA, f = 1.0 MHz
−
−
0.1
120
−
250
−
−
0.5
2.0
2.3
−
−
0.7
1.2
−
3.5
8.0
−
0.45
−
V
GHz
pF
ps
CRE
pF
300
250
200
150
100
RqJA = 403°C/W
0
50
100
TA, AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
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2
Unit
−
350
PD, POWER DISSIPATION (mW)
Max
mA
CCSrb’b
Feedback Capacitance
VCB = 10 V, IE = 0 mA, f = 1.0 MHz
0
−50
Typ
COB
Collector to Base Time Constant
VCE = 3 V, IE = −5.0 mA, f = 31.9 MHz
50
Min
150
NSF2250WT1
350
300
200
VCE = 12 V
hFE, DC CURRENT GAIN
IC, COLLECTOR CURRENT (mA)
250
150
5V
3V
100
50
TA = 125°C
250
200
25°C
150
100
−55°C
50
VCE = 5 V
0
0.1
1
10
hFE, DC CURRENT GAIN
0
100
0.1
Figure 2. DC Current Gain versus Collector
Current
CRE, FEEDBACK CAPACITANCE (pF)
VCE = 12 V
1000
100
100
Figure 4. Gain Bandwidth Product versus
Collector Current
10
f = 1 MHz
TA = 25°C
1
0.1
1
10
VCB, COLLECTOR BASE VOLTAGE (VOLTS)
1.4
1.2
1
0.8
0.6
0.4
f = 1 MHz
TA = 25°C
0.2
0
0
100
Figure 5. Device Capacitance versus Collector
Base Voltage
1.6
Cob, CAPACITANCE (pF)
ft, GAIN BANDWIDTH PRODUCT (MHz)
5V
1
10
IC, COLLECTOR CURRENT (mA)
100
Figure 3. DC Current Gain versus Collector
Current
10,000
0.1
1
10
IC, COLLECTOR CURRENT
5
10
15
20
25
30
VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 6. Output Capacitance
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3
35
NSF2250WT1
TYPICAL COMMON EMITTER SCATTERING PARAMETER (TA = 25°C)
Freq
MHz
S11
Mag
S21
S12
S22
Ang
Mag
Ang
Mag
Ang
Mag
Ang
VCE = 2.5 V, IC = 2.5 mA
50
0.926
−14.124
6.803
162.639
0.018
82.792
0.973
−7.062
100
0.855
−26.794
6.224
148.649
0.034
73.296
0.921
−12.818
200
0.667
−47.287
5.033
126.317
0.058
62.292
0.807
−19.210
300
0.513
−60.931
4.072
110.981
0.074
58.641
0.736
−21.979
400
0.411
−70.342
3.326
100.524
0.090
57.333
0.694
−23.695
500
0.342
−77.461
2.831
92.771
0.104
56.067
0.670
−25.311
600
0.297
−84.335
2.445
86.222
0.117
55.166
0.651
−27.095
700
0.261
−90.986
2.154
80.493
0.131
53.800
0.637
−29.095
800
0.236
−97.798
1.935
75.382
0.144
52.087
0.627
−31.026
900
0.218
−104.905
1.755
70.672
0.155
50.745
0.617
−33.167
1000
0.205
−112.449
1.617
66.258
0.168
49.386
0.608
−35.352
1500
0.190
−147.224
1.200
48.079
0.219
42.418
0.575
−46.016
2000
0.215
−171.677
1.011
33.299
0.258
35.910
0.544
−58.267
2500
0.230
−172.291
0.889
20.271
0.294
31.024
0.510
−68.713
3000
0.236
−155.125
0.866
10.984
0.340
28.868
0.450
−81.517
TYPICAL COMMON EMITTER SCATTERING PARAMETER (TA = 25°C)
Freq
MHz
S11
Mag
S21
S12
S22
Ang
Mag
Ang
Mag
Ang
Mag
Ang
VCE = 3 V, IC = 5 mA
50
0.858
−20.126
12.065
156.269
0.017
78.802
0.945
−10.278
100
0.733
−36.552
10.452
139.116
0.029
69.100
0.850
−16.656
200
0.493
−58.358
7.472
115.678
0.047
62.893
0.712
−20.497
300
0.362
−69.976
5.544
103.053
0.062
62.188
0.653
−21.545
400
0.288
−78.272
4.337
94.866
0.075
61.876
0.621
−22.551
500
0.242
−85.666
3.582
88.592
0.090
61.259
0.603
−23.975
600
0.212
−93.237
3.048
83.504
0.103
59.861
0.590
−25.526
700
0.190
−101.308
2.656
78.785
0.116
58.802
0.580
−27.405
800
0.177
−109.656
2.375
74.561
0.128
57.017
0.573
−29.334
900
0.167
−118.336
2.145
70.348
0.141
55.629
0.563
−31.402
1000
0.163
−127.188
1.968
66.700
0.153
53.851
0.555
−33.301
1500
0.176
−164.287
1.435
50.083
0.203
47.574
0.528
−43.164
2000
0.210
−174.155
1.187
35.998
0.246
41.767
0.501
−54.213
2500
0.226
−159.754
1.034
23.227
0.288
36.614
0.469
−63.689
3000
0.239
−144.224
0.995
14.088
0.340
34.458
0.413
−74.387
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4
NSF2250WT1
TYPICAL COMMON EMITTER SCATTERING PARAMETER (TA = 25°C)
Freq
MHz
S11
Mag
S21
S12
S22
Ang
Mag
Ang
Mag
Ang
Mag
Ang
VCE = 3 V, IC = 10 mA
50
0.643
−35.313
15.384
140.063
0.015
69.823
0.864
−14.048
100
0.459
−53.013
11.650
121.580
0.024
63.636
0.738
−17.013
200
0.289
−70.035
7.214
104.714
0.040
65.531
0.647
−17.265
300
0.225
−80.644
5.260
96.934
0.053
66.205
0.618
−18.444
400
0.192
−91.607
4.122
91.266
0.068
66.344
0.598
−20.216
500
0.172
−102.488
3.419
86.447
0.082
64.574
0.584
−22.273
600
0.161
−113.748
2.929
82.212
0.096
63.206
0.572
−24.418
700
0.156
−125.151
2.575
78.231
0.107
61.822
0.561
−26.828
800
0.155
−135.549
2.313
74.282
0.119
60.606
0.553
−28.821
900
0.156
−145.469
2.099
70.461
0.131
59.154
0.543
−31.132
1000
0.163
−153.718
1.925
67.004
0.141
57.409
0.536
−33.247
1500
0.201
−175.526
1.415
50.535
0.193
52.024
0.505
−43.365
2000
0.237
−159.398
1.173
36.726
0.240
46.396
0.477
−54.652
2500
0.247
−147.097
1.021
24.113
0.289
41.529
0.444
−64.094
3000
0.259
−133.925
0.982
15.023
0.346
38.491
0.382
−75.243
TYPICAL COMMON EMITTER SCATTERING PARAMETER (TA = 25°C)
Freq
MHz
S11
Mag
S21
Ang
S12
S22
Mag
Ang
Mag
Ang
Mag
Ang
VCE = 10 V, IC = 5 mA
50
0.877
−17.278
11.972
157.707
0.012
81.580
0.972
−7.268
100
0.765
−31.274
10.386
140.944
0.022
72.099
0.900
−12.126
200
0.539
−49.213
7.575
118.277
0.037
66.849
0.803
−14.944
300
0.406
−57.758
5.678
105.478
0.049
66.104
0.757
−16.182
400
0.334
−63.347
4.464
97.467
0.062
65.473
0.729
−17.508
500
0.286
−68.461
3.698
91.347
0.073
64.460
0.717
−19.007
600
0.252
−73.828
3.159
86.264
0.085
63.014
0.706
−20.874
700
0.227
−79.612
2.766
81.745
0.095
62.100
0.697
−22.551
800
0.208
−86.135
2.474
77.803
0.106
60.785
0.690
−24.442
900
0.190
−93.121
2.237
73.571
0.116
59.532
0.682
−26.405
1000
0.179
−100.507
2.047
70.150
0.125
57.905
0.674
−28.385
1500
0.162
−139.494
1.495
53.949
0.169
52.604
0.652
−37.411
2000
0.185
−167.453
1.242
40.156
0.207
47.697
0.631
−47.834
2500
0.200
−175.534
1.082
27.306
0.247
44.045
0.609
−55.962
3000
0.208
−159.130
1.050
18.234
0.296
42.716
0.557
−65.696
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5
NSF2250WT1
VCE = 2.5 V, IC = 2.5 mA
S11
S12
j50
j25
90°
60°
120°
j100
30°
150°
j10
3 GHz
3 GHz
10
0
25
50
100
0
180°
0.05 GHz
0.2
0.3
0.4
0.5 0°
0.05 GHz
−j10
−150°
−30°
−j100
−j25
−60°
−120°
−90°
−j50
Figure 7. Input Reflection Coefficient
S22
Figure 8. Reverse Transmission Coefficient
S21
j50
j25
90°
60°
120°
j100
30°
150°
j10
0.05 GHz
0
10
25
50
100
0
180°
3 GHz
0.05 GHz
2 4
6
8
10 0°
3 GHz
−j10
−150°
−30°
−j100
−j25
−60°
−120°
−90°
−j50
Figure 9. Output Reflection Coefficient
Figure 10. Forward Transmission Coefficient
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6
NSF2250WT1
VCE = 3.0 V, IC = 10 mA
S11
S12
j50
j25
90°
60°
120°
j100
150°
30°
3 GHz
j10
3 GHz
10
0
25
50
100
0
180°
0.05 GHz
0.2
0.3
0.4
0.5 0°
0.05 GHz
−j10
−150°
−30°
−j100
−j25
−60°
−120°
−90°
−j50
Figure 11. Input Reflection Coefficient
S22
Figure 12. Reverse Transmission Coefficient
S21
j50
j25
90°
60°
120°
j100
150°
0.05 GHz
30°
j10
0
10
25
50
100
0
180°
3 GHz
0.05 GHz
4 8
12
16
20 0°
3 GHz
−j10
−150°
−30°
−j100
−j25
−60°
−120°
−90°
−j50
Figure 13. Output Reflection Coefficient
Figure 14. Forward Transmission Coefficient
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NSF2250WT1
TYPICAL COMMON BASE SCATTERING PARAMETER (TA = 25°C)
Freq
MHz
S11
Mag
S21
S12
S22
Ang
Mag
Ang
Mag
Ang
Mag
Ang
VCE = 2.5 V, IC = 2.5 mA
50
0.627
176.455
1.6218
−3.3808
0.003
81.692
1.006
−1.7455
100
0.626
172.821
1.6153
−6.8404
0.008
87.954
1.002
−3.5734
200
0.622
165.583
1.6042
−13.205
0.014
92.620
1.005
−6.7806
400
0.608
151.867
1.5630
−26.289
0.031
96.834
1.006
−13.779
600
0.589
138.455
1.5099
−39.579
0.052
96.285
1.016
−21.141
800
0.566
126.103
1.4461
−52.382
0.076
94.675
1.022
−28.553
1000
0.541
114.811
1.3613
−65.315
0.102
90.577
1.026
−36.519
1500
0.476
89.445
1.1404
−98.892
0.170
78.774
1.014
−57.448
2000
0.397
68.206
0.8928
−133.58
0.233
68.003
0.922
−77.708
TYPICAL COMMON BASE SCATTERING PARAMETER (TA = 25°C)
Freq
MHz
S11
Mag
S21
S12
S22
Ang
Mag
Ang
Mag
Ang
Mag
Ang
VCE = 3 V, IC = 5 mA
50
0.781
176.95
1.7732
−3.0425
0.004
85.472
1.006
−1.6658
100
0.780
174.093
1.7625
−5.9870
0.006
88.871
1.002
−3.5604
200
0.776
168.012
1.7622
−11.733
0.013
94.408
1.004
−6.7723
400
0.759
156.688
1.7285
−23.541
0.029
100.70
1.006
−13.627
600
0.743
145.893
1.6911
−35.161
0.047
100.93
1.015
−20.799
800
0.725
135.660
1.6441
−46.886
0.071
98.938
1.024
−28.057
1000
0.709
126.241
1.5817
−58.697
0.095
95.803
1.031
−35.921
1500
0.674
103.465
1.4275
−90.316
0.172
85.633
1.037
−56.915
2000
0.620
81.3686
1.1968
−123.89
0.249
73.589
0.957
−77.953
TYPICAL COMMON BASE SCATTERING PARAMETER (TA = 25°C)
Freq
MHz
S11
Mag
S21
S12
S22
Ang
Mag
Ang
Mag
Ang
Mag
Ang
VCE = 3 V, IC = 10 mA
50
0.867
176.898
1.8601
−3.2938
0.004
88.195
1.006
−1.7132
100
0.863
173.941
1.8432
−6.3479
0.007
90.044
1.001
−3.6916
200
0.851
167.942
1.8370
−12.359
0.014
91.598
1.003
−6.9503
400
0.821
157.527
1.7814
−23.95
0.029
96.128
1.003
−13.909
600
0.795
148.933
1.7303
−34.993
0.045
97.955
1.011
−21.082
800
0.782
139.487
1.6831
−46.443
0.067
98.521
1.018
−28.456
1000
0.773
131.501
1.6327
−57.916
0.091
96.532
1.024
−36.296
1500
0.765
110.253
1.4975
−89.11
0.169
88.005
1.031
−57.462
2000
0.730
87.937
1.2711
−123.21
0.253
76.070
0.950
−78.777
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NSF2250WT1
VCE = 2.5 V, IC = 2.5 mA
S11
S12
j50
j25
90°
2 GHz
60°
120°
j100
30°
150°
j10
2 GHz
10
25
0.05 GHz
0
50
100
0
180°
0.05 GHz
0.1
0.15
0.2 0.25 0°
−j10
−150°
−30°
−j100
−j25
−60°
−120°
−90°
−j50
Figure 15. Input Reflection Coefficient
S22
Figure 16. Reverse Transmission Coefficient
S21
j50
j25
90°
60°
120°
j100
30°
150°
j10
0
10
25
50
100
0
0.05
180°
0.1
0.15
0.05 GHz
0.2 0.25 0°
0.05 GHz
2 GHz
−j10
−150°
−j25
2 GHz
−30°
−j100
−60°
−120°
−90°
−j50
Figure 17. Output Reflection Coefficient
Figure 18. Forward Transmission Coefficient
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NSF2250WT1
PACKAGE DIMENSIONS
SC−70 (SOT−323)
CASE 419−04
ISSUE M
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
e1
3
E
HE
1
DIM
A
A1
A2
b
c
D
E
e
e1
L
HE
2
b
e
A
0.05 (0.002)
c
A2
0.30
0.10
1.80
1.15
1.20
2.00
MILLIMETERS
NOM
MAX
0.90
1.00
0.05
0.10
0.7 REF
0.35
0.40
0.18
0.25
2.10
2.20
1.24
1.35
1.30
1.40
0.65 BSC
0.425 REF
2.10
2.40
MIN
0.032
0.000
0.012
0.004
0.071
0.045
0.047
0.079
INCHES
NOM
0.035
0.002
0.028 REF
0.014
0.007
0.083
0.049
0.051
0.026 BSC
0.017 REF
0.083
MAX
0.040
0.004
0.016
0.010
0.087
0.053
0.055
0.095
STYLE 3:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
L
A1
MIN
0.80
0.00
SOLDERING FOOTPRINT*
0.65
0.025
0.65
0.025
1.9
0.075
0.9
0.035
0.7
0.028
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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