AP6N3R8H
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Rg & UIS Test
D
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
60V
RDS(ON)
3.8mΩ
ID
G
▼ RoHS Compliant & Halogen-Free
BVDSS
5
155A
S
Description
AP6N3R8 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications using infrared reflow technique and
suited for high current application due to the low connection
resistance.
G
D
S
TO-252(H)
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
VDS
.
Parameter
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TC=25℃
Drain Current (Chip), VGS @ 10V
ID@TC=25℃
Drain Current, VGS @ 10V5
ID@TC=100℃
Drain Current, VGS @ 10V
5
5
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
PD@TA=25℃
Total Power Dissipation
EAS
Single Pulse Avalanche Energy
TSTG
TJ
Rating
Units
60
V
+20
V
155
A
90
A
90
A
360
A
156
W
2
W
184
mJ
Storage Temperature Range
-55 to 150
℃
Operating Junction Temperature Range
-55 to 150
℃
4
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Data and specifications subject to change without notice
3
Value
Units
0.8
℃/W
62.5
℃/W
1
201510021
AP6N3R8H
o
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
VGS=0V, ID=250uA
60
-
-
V
VGS=10V, ID=90A
-
-
3.8
mΩ
BVDSS
Drain-Source Breakdown Voltage
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
5
V
gfs
Forward Transconductance
VDS=5V, ID=90A
-
74
-
S
IDSS
Drain-Source Leakage Current
VDS=48V, VGS=0V
-
-
25
uA
IGSS
Gate-Source Leakage
VGS= +20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=90A
-
77
123.2
nC
Qgs
Gate-Source Charge
VDS=30V
-
17
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
38
-
nC
td(on)
Turn-on Delay Time
VDS=30V
-
16
-
ns
tr
Rise Time
ID=90A
-
135
-
ns
td(off)
Turn-off Delay Time
RG=3.5Ω
-
40
-
ns
tf
Fall Time
VGS=10V
-
175
-
ns
Ciss
Input Capacitance
VGS=0V
-
3900 6240
pF
Coss
Output Capacitance
VDS=30V
-
2480
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
170
-
pF
Rg
Gate Resistance
-
2.4
4.8
Ω
Min.
Typ.
IS=90A, VGS=0V
-
-
1.3
V
2
.
f=1.0MHz
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=50A, VGS=0V,
-
65
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
80
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
2
3.Surface mounted on 1 in copper pad of FR4 board
o
4.Starting Tj=25 C , VDD=30V , L=0.3mH , RG=25Ω
5.Package limitation current is 90A .
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP6N3R8H
200
400
o
T C = 150 o C
10V
160
9.0V
300
ID , Drain Current (A)
ID , Drain Current (A)
T C = 25 C
8.0V
7.0V
V G = 6.0V
200
10V
9.0V
8.0V
7.0V
V G = 6.0V
120
80
100
40
0
0
0
4
8
12
16
20
0
2
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
6
8
10
Fig 2. Typical Output Characteristics
18
2.0
I D =90A
V GS =10V
I D =90A
o
10
.
Normalized RDS(ON)
T C =25 C
14
RDS(ON) (mΩ)
4
V DS , Drain-to-Source Voltage (V)
1.6
1.2
0.8
6
0.4
2
5
6
7
8
9
-100
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
V GS Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2
100
I D =250uA
Normalized VGS(th)
1.6
IS(A)
10
T j =150 o C
T j =25 o C
1.2
0.8
1
0.4
0
0.1
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-100
-50
0
50
100
150
T j ,Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP6N3R8H
f=1.0MHz
12
8000
I D = 90A
V DS =30V
6000
8
C (pF)
VGS , Gate to Source Voltage (V)
10
6
4000
C iss
4
C oss
2000
2
C rss
0
0
0
20
40
60
80
100
1
21
Q G , Total Gate Charge (nC)
41
61
81
V DS ,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
Operation in this area
limited by RDS(ON)
10us
ID (A)
100
100us
10
1
1ms
10ms
DC
o
T C =25 C
Single Pulse
.
Normalized Thermal Response (Rthjc)
1000
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
T
0.02
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
0.01
Single Pulse
0.01
0.1
0.1
1
10
100
0.000001
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
200
VG
ID , Drain Current (A)
160
QG
10V
120
QGS
Limited by package
QGD
80
40
Charge
Q
0
25
50
75
100
T C , Case Temperature (
125
o
150
C)
Fig 11. Drain Current v.s. Case
Temperature
Fig 12. Gate Charge Waveform
4
AP6N3R8H
20
200
o
T j =25 C
160
PD, Power Dissipation(W)
RDS(ON) (mΩ)
16
12
8
V GS =10V
4
120
80
40
0
0
0
20
40
60
80
0
100
50
100
150
T C , Case Temperature( o C)
I D , Drain Current (A)
Fig 13. Typ. Drain-Source on State
Resistance
Fig 14. Total Power Dissipation
160
ID , Drain Current (A)
V DS =5V
120
80
.
T j =150 o C
40
o
T j =25 C
T j = -55 o C
0
0
2
4
6
8
10
V GS , Gate-to-Source Voltage (V)
Fig 15. Transfer Characteristics
5
AP6N3R8H
MARKING INFORMATION
Part Number
6N3R8
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
.
6