FDP8442_F085 N-Channel PowerTrench® MOSFET 40V, 80A, 3.1mΩ Applications Typ rDS(on) = 2.3mΩ at VGS = 10V, ID = 80A Automotive Engine Control Typ Qg(10) = 181nC at VGS = 10V Powertrain Management Low Miller Charge Solenoid and Motor Drivers Low Qrr Body Diode Electronic Steering UIS Capability (Single Pulse and Repetitive Pulse) Integrated Starter / Alternator Qualified to AEC Q101 Distributed Power Architectures and VRMs RoHS Compliant Primary Switch for 12V Systems A REE I DF M ENTATIO LE N MP LE Features ©2010 Fairchild Semiconductor Corporation FDP8442_F085 Rev. A1 1 www.fairchildsemi.com FDP8442_F085 N-Channel PowerTrench® MOSFET May 2010 Symbol Drain to Source Voltage VDSS VGS ID Parameter Ratings 40 Units V Gate to Source Voltage ±20 V Drain Current Continuous (TC<158oC, VGS = 10V) 80 Drain Current Continuous (Tamb = 25oC, VGS = 10V, with RθJA = 62oC/W) 23 Pulsed EAS PD A See Figure 4 Single Pulse Avalanche Energy (Note 1) 720 mJ Power Dissipation 254 W Derate above 25oC 1.7 W/oC -55 to +175 oC 0.59 oC/W 62 oC/W TJ, TSTG Operating and Storage Temperature Thermal Characteristics RθJC Thermal Resistance Junction to Case RθJA Thermal Resistance Junction to Ambient (Note 2) Package Marking and Ordering Information Device Marking FDP8442 Device FDP8442_F085 Package TO-220AB Reel Size Tube Tape Width N/A Quantity 50 units Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units V Off Characteristics Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V IDSS Zero Gate Voltage Drain Current VDS = 32V VGS = 0V IGSS Gate to Source Leakage Current BVDSS 40 - - - - 1 - - 250 VGS = ±20V - - ±100 nA V TJ = 150°C FDP8442_F085 N-Channel PowerTrench® MOSFET MOSFET Maximum Ratings TC = 25°C unless otherwise noted µA On Characteristics VGS(th) rDS(on) Gate to Source Threshold Voltage Drain to Source On Resistance VDS = VGS, ID = 250µA 2 2.9 4 ID = 80A, VGS = 10V - 2.3 3.1 ID = 80A, VGS = 10V, TJ = 175°C - 3.9 5.3 mΩ VDS = 25V, VGS = 0V, f = 1MHz - 12200 - pF - 1040 - pF - 640 - pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG Gate Resistance VGS = 0.5V, f = 1MHz - 1.0 - Ω Qg(TOT) Total Gate Charge at 10V VGS = 0 to 10V - 181 235 nC Qg(TH) Threshold Gate Charge VGS = 0 to 2V - 23 30 nC Qgs Gate to Source Gate Charge - 49 - nC Qgs2 Gate Charge Threshold to Plateau Qgd Gate to Drain “Miller” Charge FDP8442_F085 Rev. A1 2 VDD = 20V ID = 80A Ig = 1mA - 26 - nC - 41 - nC www.fairchildsemi.com Symbol Parameter Test Conditions Min Typ Max Units Switching Characteristics t(on) Turn-On Time - - 62 ns td(on) Turn-On Delay Time - 19.5 - ns - 19.3 - ns - 57 - ns tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time - 17.2 - ns toff Turn-Off Time - - 118 ns ISD = 80A - 0.9 1.25 V ISD = 40A - 0.8 1.0 V VDD = 20V, ID = 80A VGS = 10V, RGS = 2Ω Drain-Source Diode Characteristics VSD Source to Drain Diode Voltage trr Reverse Recovery Time IF = 75A, di/dt = 100A/µs - 49 64 ns Qrr Reverse Recovery Charge IF = 75A, di/dt = 100A/µs - 70 91 nC Notes: 1: Starting TJ = 25oC, L = 0.35mH, IAS = 64A 2: Pulse width = 100s. FDP8442_F085 N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. FDP8442_F085 Rev. A1 3 www.fairchildsemi.com 300 1.0 250 ID, DRAIN CURRENT (A) POWER DISSIPATION MULIPLIER 1.2 0.8 0.6 0.4 0 25 50 75 100 125 150 TC, CASE TEMPERATURE(oC) 200 150 100 2 1 0 25 175 Figure 1. Normalized Power Dissipation vs Case Temperature NORMALIZED THERMAL IMPEDANCE, ZθJC VGS = 10V 50 0.2 0.0 CURRENT LIMITED BY PACKAGE 50 75 100 TC, CASE 125 150 175 TEMPERATURE(oC) Figure 2. Maximum Continuous Drain Current vs Case Temperature DUTY CYCLE - DESCENDING ORDER D = 0.50 0.20 0.10 0.05 0.02 0.01 0.1 PDM FDP8442_F085 N-Channel PowerTrench® MOSFET Typical Characteristics t1 t2 0.01 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC x RθJC + TC SINGLE PULSE 1E-3 -5 10 -4 -3 10 -2 -1 0 10 10 10 t, RECTANGULAR PULSE DURATION(s) 1 10 10 Figure 3. Normalized Maximum Transient Thermal Impedance 10000 IDM, PEAK CURRENT (A) VGS = 10V TC = 25oC TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 1000 175 - TC I = I25 150 100 SINGLE PULSE 10 -5 10 -4 10 -3 -2 -1 10 10 10 t, RECTANGULAR PULSE DURATION(s) 0 10 1 10 Figure 4. Peak Current Capability FDP8442_F085 Rev. A1 4 www.fairchildsemi.com 500 ID, DRAIN CURRENT (A) 1000 10us 100us 100 10 LIMITED BY PACKAGE 1ms 1 0.1 IAS, AVALANCHE CURRENT (A) 4000 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 1 SINGLE PULSE TJ = MAX RATED o TC = 25 C 10ms 100 o STARTING TJ = 25 C 10 o STARTING TJ = 150 C 1 0.01 DC 10 VDS, DRAIN TO SOURCE VOLTAGE (V) If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R ≠ 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] 100 0.1 1 10 100 tAV, TIME IN AVALANCHE (ms) 1000 5000 NOTE: Refer to Fairchild Application Notes AN7514 and AN7515 Figure 5. Forward Bias Safe Operating Area 160 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX VGS = 10V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 160 Figure 6. Unclamped Inductive Switching Capability VDD = 5V 120 TJ = 175oC 80 TJ = 25oC TJ = -55oC 40 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX VGS = 5V 120 FDP8442_F085 N-Channel PowerTrench® MOSFET Typical Characteristics VGS = 4.5V 80 40 VGS = 4V 0 2.0 2.5 3.0 3.5 4.0 4.5 VGS, GATE TO SOURCE VOLTAGE (V) 0 5.0 Figure 7. Transfer Characteristics NORMALIZED DRAIN TO SOURCE ON-RESISTANCE rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 40 TJ = 175oC 20 TJ = 25oC 10 0 4 5 6 7 8 9 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 9. Drain to Source On-Resistance Variation vs Gate to Source Voltage FDP8442_F085 Rev. A1 1 2 3 4 VDS, DRAIN TO SOURCE VOLTAGE (V) 5 Figure 8. Saturation Characteristics 50 30 0 1.8 1.6 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 1.4 1.2 1.0 0.8 0.6 -80 ID = 80A VGS = 10V -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 200 Figure 10. Normalized Drain to Source On Resistance vs Junction Temperature 5 www.fairchildsemi.com NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE NORMALIZED GATE THRESHOLD VOLTAGE 1.2 VGS = VDS ID = 250µA 1.1 1.0 0.9 0.8 0.7 0.6 0.5 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 200 CAPACITANCE (pF) Ciss 10000 Coss Crss f = 1MHz VGS = 0V 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 13. Capacitance vs Drain to Source Voltage FDP8442_F085 Rev. A1 1.05 1.00 0.95 0.90 -80 -40 0 40 80 120 160 200 50 Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature VGS, GATE TO SOURCE VOLTAGE(V) 40000 100 0.1 ID = 250µA TJ, JUNCTION TEMPERATURE (oC) Figure 11. Normalized Gate Threshold Voltage vs Junction Temperature 1000 1.10 10 ID = 80A 8 VDD = 15V VDD = 20V 6 FDP8442_F085 N-Channel PowerTrench® MOSFET Typical Characteristics VDD = 25V 4 2 0 0 50 100 150 Qg, GATE CHARGE(nC) 200 Figure 14. 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