Honeywell HC6856WVFZC35 32k x 8 static ram Datasheet

Military & Space Products
32K x 8 STATIC RAM
HC6856
FEATURES
RADIATION
OTHER
• Fabricated with RICMOS™ IV Bulk
0.8 µm Process (Leff = 0.65 µm)
• Listed on SMD #5962-92153. Available as
MIL-PRF-38535 QML Class Q and Class V
• Total Dose Hardness through 1x106 rad(SiO2)
• Read/Write Cycle Times
≤ 30 ns (Typical)
≤ 40 ns (-55 to 125°C)
• Neutron Hardness through 1x1014 cm-2
• Dynamic and Static Transient Upset Hardness
through 1x109 rad(Si)/s
• Standby Current of 20 µA (typical)
• Asynchronous Operation
• Soft Error Rate of <1x10-10 upsets/bit-day
• CMOS or TTL Compatible I/O
• Dose Rate Survivability through 1x1012 rad(Si)/s
• Single 5 V ± 10% Power Supply
• Latchup Free
• Packaging Options
- 36-Lead Flat Pack (0.630 in. x 0.650 in.)
- 28-Lead Flat Pack (0.530 in. x 0.720 in.)
- 28-Lead DIP, MIL-STD-1835, CDIP2-T28
GENERAL DESCRIPTION
The 32K x 8 Radiation Hardened Static RAM is a high
performance 32,768 x 8-bit static random access memory
with industry-standard functionality. It is fabricated with
Honeywell’s radiation hardened technology, and is designed for use in systems operating in radiation environments. The RAM operates over the full military temperature
range and requires only a single 5 V ± 10% power supply.
The RAM is available with either TTL or CMOS compatible
I/O. Power consumption is typically less than 50 mW/MHz
in operation, and less than 5 mW/MHz in the low power
disabled mode. The RAM read operation is fully asynchronous, with an associated typical access time of 20 ns.
Honeywell’s enhanced RICMOS™ IV (Radiation Insensitive
CMOS) technology is radiation hardened through the use of
advanced and proprietary design, layout, and process hardening techniques. The RICMOS™ IV process is a 5-volt,
twin-well CMOS technology with a 170 Å gate oxide and a
minimum drawn feature size of 0.8 µm (0.65 µm effective
gate length—Leff). Additional features include a three layer
interconnect metalization and a lightly doped drain (LDD)
structure for improved short channel reliability. High resistivity cross-coupled polysilicon resistors have been incorporated for single event upset hardening.
HC6856
FUNCTIONAL DIAGRAM
A:0-8,12-13
•
•
•
Row
Decoder
11
32,768 x 8
Memory
Array
CE
•
•
•
Column Decoder
Data Input/Output
NCS
NWE
8
DQ:0-7
8
WE • CS • CE
NWE • CS • CE • OE
NOE
(0 = high Z)
CS • CE
A:9-11,14
Signal
1 = enabled
#
Signal
All controls must be
enabled for a signal to
pass. (#: number of
buffers, default = 1)
4
SIGNAL DEFINITIONS
A: 0-14
Address input pins (A) which select a particular eight-bit word within the memory array.
DQ: 0-7
Bidirectional data pins which serve as data outputs during a read operation and as data inputs during a write
operation.
NCS
Negative chip select, when at a low level allows normal read or write operation. When at a high level it forces
the SRAM to a precharge condition, holds the data output drivers in a high impedance state and disables all
the input buffers. If this signal is not used it must be connected to VSS.
NWE
Negative write enable, when at a low level activates a write operation and holds the data output drivers in a
high impedance state. When at a high level it allows normal read operation.
NOE
Negative output enable, when at a high level holds the data output drivers in a high impedance state. When
at a low level, the data output driver state is defined by NCS, NWE and CE. If this signal is not used it must
be connected to VSS.
CE
Chip enable, when at a high level allows normal operation. When at a low level it forces the SRAM to a
precharge condition, holds the data output drivers in a high impedance state and disables all the input buffers.
If this signal is not used it must be connected to VDD.
TRUTH TABLE
NCS
CE
NWE
NOE
MODE
DQ
L
H
H
L
Read
Data Out
L
H
L
X
Write
Data In
H
X
XX
XX
Deselected
High Z
X
L
XX
XX
Disabled
High Z
2
Notes:
X: VI=VIH or VIL
XX: VSS≤VI≤VDD
NOE=H: High Z output state maintained for
NCS=X, CE=X, NWE=X
HC6856
RADIATION CHARACTERISTICS
Total Ionizing Radiation Dose
The RAM will meet any functional or electrical specification
after exposure to a radiation pulse of ≤ 50 ns duration up to
1x1012 rad(Si)/s, when applied under recommended operating conditions. Note that the current conducted during the
pulse by the RAM inputs, outputs, and power supply may
significantly exceed the normal operating levels. The application design must accommodate these effects.
The RAM will meet all stated functional and electrical specifications over the entire operating temperature range after
the specified total ionizing radiation dose. All electrical and
timing performance parameters will remain within specifications after rebound at VDD = 5.5 V and T =125°C extrapolated to ten years of operation. Total dose hardness is
assured by wafer level testing of process monitor transistors
and RAM product using 10 keV X-ray radiation. Transistor
gate threshold shift correlations have been made between
10 keV X-rays applied at a dose rate of 1x105 rad(SiO2)/min
at T = 25°C and gamma rays (Cobalt 60 source) to ensure
that wafer level X-ray testing is consistent with standard
military radiation test environments.
The RAM will meet any functional or timing specification
after a total neutron fluence of up to 1x1014 cm-2 applied
under recommended operating or storage conditions. This
assumes an equivalent neutron energy of 1 MeV.
Transient Pulse Ionizing Radiation
Soft Error Rate
The RAM is capable of writing, reading, and retaining
stored data during and after exposure to a transient ionizing
radiation pulse of ≤1 µs duration up to 1x109 rad(Si)/s, when
applied under recommended operating conditions. To ensure validity of all specified performance parameters before, during, and after radiation (timing degradation during
transient pulse radiation is ≤10%), it is suggested that a
minimum of 0.8 µF per part of stiffening capacitance be
placed between the package (chip) VDD and VSS, with a
maximum inductance between the package (chip) and
stiffening capacitance of 0.7 nH per part. If there are no
operate-through or valid stored data requirements, the
capacitance specification can be reduced to a minimum of
0.1 µF per part.
The RAM is capable of soft error rate (SER) performance
of <1x10-10 upsets/bit-day, under recommended operating
conditions. This hardness level is defined by the Adams
10% worst case cosmic ray environment.
Neutron Radiation
Latchup
The RAM will not latch up due to any of the above radiation
exposure conditions when applied under recommended
operating conditions. Fabrication with the RICMOS™ p-epi
on p+ substrate process and use of proven design techniques, such as double guardbanding, ensure latchup
immunity.
RADIATION HARDNESS RATINGS (1)
Test Conditions
Total Dose
≥1x106
rad(SiO2)
TA=25°C
Transient Dose Rate Upset (3)
≥1x109
rad(Si)/s
Pulse width≤1 µs
Transient Dose Rate Survivability
≥1x1012
rad(Si)/s
Pulse width≤50 ns, X-ray,
VDD=6.6 V, TA=25°C
Soft Error Rate:
Level A
<1x10-9 (4)
Level Z
<1x10-10
Neutron Fluence
(1)
(2)
(3)
(4)
Units
Limits (2)
Parameter
≥1x1014
upsets/bit-day
Adams 10%
worst case environment
N/cm2
1 MeV equivalent energy,
Unbiased, TA=25°C
Device will not latch up due to any of the specified radiation exposure conditions.
Operating conditions (unless otherwise specified): VDD=4.5 V to 5.5 V, TA=-55°C to 125°C.
Suggested stiffening capacitance specifications for optimum expected dose rate upset performance is stated above in the text.
SER <1x10-10 u/b-d from -55 to 80°C.
3
HC6856
ABSOLUTE MAXIMUM RATINGS (1)
Rating
Symbol
Parameter
Min
Max
Units
VDD
Positive Supply Voltage (2)
-0.5
7.0
V
VPIN
Voltage on Any Pin (2)
-0.5
VDD+0.5
V
TSTORE
Storage Temperature (Zero Bias)
-65
150
°C
TSOLDER
Soldering Temperature • Time
270•5
°C•s
PD
Total Package Power Dissipation (3)
2.5
W
IOUT
DC or Average Output Current
25
mA
VPROT
ESD Input Protection Voltage (4)
ΘJC
Thermal Resistance (Jct-to-Case)
TJ
2000
V
28 FP/36 FP
2
°C/W
28 DIP
10
°C/W
175
°C
Junction Temperature
(1) Stresses in excess of those listed above may result in permanent damage. These are stress ratings only, and operation at these levels is not
implied. Frequent or extended exposure to absolute maximum conditions may affect device reliability.
(2) Voltage referenced to VSS.
(3) RAM power dissipation (IDDSB + IDDOP) plus RAM output driver power dissipation due to external loading must not exceed this specification.
(4) Class 2 electrostatic discharge (ESD) input protection. Tested per MIL-STD-883, Method 3015 by DESC certified lab.
RECOMMENDED OPERATING CONDITIONS
Description
Parameter
Symbol
Min
Typ
Max
Units
VDD
Supply Voltage (referenced to VSS)
4.5
5.0
5.5
V
TA
Ambient Temperature
-55
25
125
°C
VPIN
Voltage on Any Pin (referenced to VSS)
-0.3
VDD+0.3
V
CAPACITANCE (1)
Worst Case
Symbol
Parameter
CI
Input Capacitance
CO
Output Capacitance
Typical
Max
Units
Test Conditions
4
6
pF
VI=VDD or VSS, f=1 MHz
6.5
8
pF
VIO=VDD or VSS, f=1 MHz
(1) This parameter is tested during initial design characterization only.
DATA RETENTION CHARACTERISTICS
Symbol
Parameter (2)
Typical
(1)
VDR
Data Retention Voltage (3)
2.0
IDR
Data Retention Current
150
Worst Case
Min
Units
Test Conditions
Max
2.5
V
400
µA
NCS=VDR
VI=VDR or VSS
NCS=VDD=VDR
VI=VDR or VSS
(1) Typical operating conditions: TA= 25°C, pre-radiation.
(2) Worst case operating conditions: TA= -55°C to +125°C, post total dose at 25°C.
(3) To maintain valid data storage during transient radiation, VDD must be held within the recommended operating range.
4
HC6856
DC ELECTRICAL CHARACTERISTICS
Symbol
Typical Worst Case (2) Units
(1)
Min
Max
Parameter
Test Conditions (3)
IDDSB1
Static Supply Current
0.02
1.2
mA
IDDSB2
Static Supply Current with Chip Disabled
0.02
1.2
mA
IDDOPW
Dynamic Supply Current, Selected (Write)
5.5
7.5
mA
IDDOPR
Dynamic Supply Current, Selected (Read)
4.5
6.5
mA
VIH=VDD IO=0
VIL=VSS Inputs Stable
CE=VSS or NCS=VDD
IO=0, VSS≤ VI≤VDD (4)
f=1 MHz, IO=0, CE=VIH=VDD
NCS=VIL=VSS (5)
f=1 MHz, IO=0, CE=VIH=VDD
NCS=VIL=VSS (5)
II
Input Leakage Current
±0.05
-5
+5
µA
VSS≤VI≤VDD
IOZ
Output Leakage Current
±0.1
-10
10
µA
VSS≤VIO≤VDD
Output=high Z
VIL
Low-Level InputVoltage
VIH
High-Level Input Voltage
VOL
Low-Level Output Voltage
VOH
High-Level Output Voltage
CMOS
TTL
1.9
1.3
CMOS
TTL
3.0
1.7
0.8
0.7xVDD
2.2
0.2
4.8
(1)
(2)
(3)
(4)
(5)
0.3xVDD
0.4
0.05
4.2
VDD-0.05
V
V
VDD=4.5V
VDD=4.5V
V
V
VDD=5.5V
VDD=5.5V
V
V
VDD=4.5V, IOL=10 mA
VDD=4.5V, IOL=200 µA
V
V
VDD=4.5V, IOH=-5 mA
VDD=4.5V, IOH=-200 µA
Typical operating conditions: VDD= 5.0 V,TA=25°C, pre-radiation.
Worst case operating conditions: VDD=4.5 V to 5.5 V, TA=-55°C to +125°C, post total dose at 25°C.
Input high = VIH ≥ VDD-0.3V, input low =VIL ≤ 0.3V
Guaranteed but not tested.
All inputs switching. DC average current.
2.9 V
Vref1
+
-
Valid high
output
249Ω
DUT
output
Vref2
+
-
Valid low
output
CL >50 pF*
*CL = 5 pF for TWLQZ, TSHQZ, TELQZ, and TGHQZ
Tester Equivalent Load Circuit
5
HC6856
READ CYCLE AC TIMING CHARACTERISTICS (1)
Worst Case (3)
Symbol
Parameter
Typical
-55 to 125°C
(2)
Min
40
Units
Max
TAVAVR
Address Read Cycle Time
18
ns
TAVQV
Address Access Time
18
TAXQX
Address Change to Output Invalid Time
15
TSLQV
Chip Select Access Time
20
TSLQX
Chip Select Output Enable Time
20
TSHQZ
Chip Select Output Disable Time
6
10
ns
TEHQV
Chip Enable Access Time
20
40
ns
TEHQX
Chip Enable Output Enable Time
20
TELQZ
Chip Enable Output Disable Time
6
10
ns
TGLQV
Output Enable Access Time
4
10
ns
TGLQX
Output Enable Output Enable Time
3
TGHQZ
Output Enable Output Disable Time
4
40
5
ns
ns
40
16
ns
ns
16
ns
0
ns
10
ns
(1) Test conditions: input switching levels VIL/VIH=0.5V/VDD-0.5V (CMOS), VIL/VIH=0V/3V (TTL), input rise and fall times <1 ns/V, input and
output timing reference levels shown in the Tester AC Timing Characteristics table, capacitive output loading CL >50 pF, or equivalent capacitive
output loading CL=5 pF for TSHQZ, TELQZ TGHQZ. For CL >50 pF, derate access times by 0.02 ns/pF (typical).
(2) Typical operating conditions: VDD=5.0 V, TA=25°C, pre-radiation.
(3) Worst case operating conditions: VDD=4.5 V to 5.5 V, post total dose at 25°C.
TAVAVR
ADDRESS
TAVQV
TAXQX
TSLQV
NCS
TSLQX
DATA OUT
TSHQZ
HIGH
IMPEDANCE
DATA VALID
TEHQX
TEHQV
CE
TELQZ
TGLQX
TGLQV
TGHQZ
NOE
(NWE = high)
6
HC6856
WRITE CYCLE AC TIMING CHARACTERISTICS (1)
Symbol
Parameter
Typical (2)
Worst Case (3)
SER <1E-9 (4)
SER <1E-10
Min
Max
Min
Max
Units
TAVAVW Write Cycle Time (5)
30
40
60
ns
TWLWH
Write Enable Write Pulse Width
25
35
55
ns
TSLWH
Chip Select to End of Write Time
25
35
55
ns
TDVWH
Data Valid to End of Write Time
20
30
50
ns
TAVWH
Address Valid to End of Write Time
25
35
55
ns
TWHDX
Data Hold Time after End of Write Time
0
0
0
ns
TAVWL
Address Valid Setup to Start of Write Time
0
0
0
ns
TWHAX
Address Valid Hold after End of Write Time
0
0
0
ns
TWLQZ
Write Enable to Output Disable Time
5
0
TWHQX
Write Disable to Output Enable Time
15
5
5
ns
TWHWL
Write Disable to Write Enable Pulse Width
4
5
5
ns
TEHWH
Chip Enable to End of Write Time
25
35
55
ns
10
0
10
(1) Test conditions: input switching levels VIL/VIH=0.5V/VDD-0.5V (CMOS), VIL/VIH=0V/3V (TTL), input rise and fall times <1 ns/V, input and
output timing reference levels shown in the Tester AC Timing Characteristics table, capacitive output loading0 pF, or equivalent capacitive
load of 5 pF for TWLQZ.
(2) Typical operating conditions: VDD=5.0 V, TA=25°C, pre-radiation.
(3) Worst case operating conditions: VDD=4.5 V to 5.5 V, -55 to 125°C, post total dose at 25°C.
(4) SER ≤1E-10 u/b-d from -55 to 80°.
(5) TAVAVW= TWLWH + TWHWL
TAVAVW
ADDRESS
TAVWH
TWHAX
TAVWL
TWHWL
TWLWH
NWE
TWLQZ
DATA OUT
TWHQX
HIGH
IMPEDANCE
TDVWH
DATA IN
DATA VALID
TSLWH
NCS
TEHWH
CE
7
TWHDX
ns
HC6856
DYNAMIC ELECTRICAL CHARACTERISTICS
Read Cycle
Write Cycle
The RAM is asynchronous in operation, allowing the read
cycle to be controlled by address, chip select (NCS), or chip
enable (CE) (refer to Read Cycle timing diagram). To
perform a valid read operation, both chip select and output
enable (NOE) must be low and chip enable and write
enable (NWE) must be high. The output drivers can be
controlled independently by the NOE signal. Consecutive
read cycles can be executed with NCS held continuously
low, and with CE held continuously high.
The write operation is synchronous with respect to the
address bits, and control is governed by write enable
(NWE), chip select (NCS), or chip enable (CE) edge
transitions (refer to Write Cycle timing diagrams). To perform a write operation, both NWE and NCS must be low,
and CE must be high. Consecutive write cycles can be
performed with NWE or NCS held continuously low, or CE
held continuously high. At least one of the control signals
must transition to the opposite state between consecutive
write operations.
For an address activated read cycle, NCS and CE must be
valid prior to or coincident with the activating address edge
transition(s). Any amount of toggling or skew between
address edge transitions is permissible; however, data
outputs will become valid TAVQV time following the latest
occurring address edge transition. The minimum address
activated read cycle time is TAVAV. When the RAM is
operated at the minimum address activated read cycle
time, the data outputs will remain valid on the RAM I/O until
TAXQX time following the next sequential address transition.
The write mode can be controlled via three different control
signals: NWE, NCS, and CE. All three modes of control are
similar except the NCS and CE controlled modes actually
disable the RAM during the write recovery pulse. Only the
NWE controlled mode is shown in the table and diagram on
the previous page for simplicity; however, each mode of
control provides the same write cycle timing characteristics. Thus, some of the parameter names referenced below
are not shown in the write cycle table or diagram, but
indicate which control pin is in control as it switches high or
low.
To control a read cycle with NCS, all addresses and CE
must be valid prior to or coincident with the enabling NCS
edge transition. Address or CE edge transitions can occur
later than the specified setup times to NCS; however, the
valid data access time will be delayed. Any address edge
transition, which occurs during the time when NCS is low,
will initiate a new read access, and data outputs will not
become valid until TAVQV time following the address edge
transition. Data outputs will enter a high impedance state
TSHQZ time following a disabling NCS edge transition.
To write data into the RAM, NWE and NCS must be held low
and CE must be held high for at least TWLWH/TSLSH/
TEHEL time. Any amount of edge skew between the
signals can be tolerated, and any one of the control signals
can initiate or terminate the write operation. For consecutive write operations, write pulses must be separated by the
minimum specified TWHWL/TSHSL/TELEH time. Address
inputs must be valid at least TAVWL/TAVSL/TAVEH time
before the enabling NWE/NCS/CE edge transition, and
must remain valid during the entire write time. A valid data
overlap of write pulse width time of TDVWH/TDVSH/TDVEL,
and an address valid to end of write time of TAVWH/
TAVSH/TAVEL also must be provided for during the write
operation. Hold times for address inputs and data inputs
with respect to the disabling NWE/NCS/CE edge transition
must be a minimum of TWHAX/TSHAX/TELAX time and
TWHDX/TSHDX/TELDX time, respectively. The minimum
write cycle time is TAVAV.
To control a read cycle with CE, all addresses and NCS
must be valid prior to or coincident with the enabling CE
edge transition. Address or NCS edge transitions can
occur later than the specified setup times to CE; however,
the valid data access time will be delayed. Any address
edge transition which occurs during the time when CE is
high will initiate a new read access, and data outputs will
not become valid until TAVQV time following the address
edge transition. Data outputs will enter a high impedance
state TELQZ time following a disabling CE edge transition.
8
HC6856
TESTER AC TIMING CHARACTERISTICS
TTL I/O Configuration
CMOS I/O Configuration
3V
Input
Levels*
0V
VDD-0.4V
0.4 V
High Z
3.4 V
High Z
2.4 V
High Z = 2.9V
VDD/2
0.5 V
1.5 V
Output
Sense
Levels
VDD-0.5 V
1.5 V
VDD/2
VDD-0.4V
0.4 V
High Z
3.4 V
High Z
2.4 V
High Z = 2.9V
* Input rise and fall times <1 ns/V
QUALITY AND RADIATION HARDNESS
ASSURANCE
QML devices offer ease of procurement by eliminating the
need to create detailed specifications and offer benefits of
improved quality and cost savings through standardization.
Honeywell maintains a high level of product integrity through
process control, utilizing statistical process control, a complete “Total Quality Assurance System,” a computer data
base process performance tracking system, and a radiation hardness assurance strategy.
RELIABILITY
Honeywell understands the stringent reliability requirements that space and defense systems require and has
extensive experience in reliability testing on programs of
this nature. This experience is derived from comprehensive testing of VLSI processes. Reliability attributes of the
RICMOS™ process were characterized by testing specially
designed irradiated and non-irradiated test structures from
which specific failure mechanisms were evaluated. These
specific mechanisms included, but were not limited to, hot
carriers, electromigration and time dependent dielectric
breakdown. This data was then used to make changes to
the design models and process to ensure more reliable
products.
The radiation hardness assurance strategy starts with a
technology that is resistant to the effects of radiation.
Radiation hardness is assured on every wafer by irradiating
test structures as well as SRAM product, and then monitoring key parameters which are sensitive to ionizing radiation. Conventional MIL-STD-883 TM 5005 Group E testing,
which includes total dose exposure with Cobalt 60, may
also be performed as required. This Total Quality approach
ensures our customers of a reliable product by engineering
in reliability, starting with process development and continuing through product qualification and screening.
SCREENING LEVELS
In addition, the reliability of the RICMOS™ process and
product in a military environment was monitored by testing
irradiated and non-irradiated circuits in accelerated dynamic life test conditions. Packages are qualified for product use after undergoing Groups B & D testing as outlined
in MIL-STD-883, TM 5005, Class S. The product is qualified by following a screening and testing flow to meet the
customer’s requirements. Quality conformance testing is
performed as an option on all production lots to ensure the
ongoing reliability of the product.
Honeywell offers several levels of device screening to meet
your system needs. “Engineering Devices” are available
with limited performance and screening for breadboarding
and/or evaluation testing. Hi-Rel Level B and S devices
undergo additional screening per the requirements of MILSTD-883. As a QML supplier, Honeywell also offers QML
Class Q and V devices per MIL-PRF-38535 and are available per the applicable Standard Military Drawing (SMD).
9
HC6856
PACKAGING
The 32K x 8 SRAM is offered in a custom 36-lead flat pack
(FP), 28-Lead FP, or standard 28-lead DIP. Each package
is constructed of multilayer ceramic (Al2O3) and features
internal power and ground planes. The 36-lead FP also
features a non-conductive ceramic tie bar on the lead
frame. The purpose of the tie bar is to allow electrical testing
of the device, while preserving the lead integrity during
shipping and handling, up to the point of lead forming and
insertion. Ceramic chip capacitors can be mounted to the
package by the user to maximize supply noise decoupling
and increase board packing density. These capacitors
attach directly to the internal package power and ground
planes. This design minimizes resistance and inductance
of the bond wire and package, both of which are critical in
a transient radiation environment. All NC (no connect) pins
must be connected to either VDD, VSS or an active driver
to prevent charge build up in the radiation environment.
28-LEAD DIP & FP PINOUT
36-LEAD FLAT PACK PINOUT
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
VSS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
VDD
NWE
A13
A8
A9
A11
NOE
A10
NCS
DQ7
DQ6
DQ5
DQ4
DQ3
28
27
26
25
24
23
22
21
20
19
18
17
16
15
Top
View
VSS
VDD
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
NC
VDD
VSS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
20
19
Top
View
36-LEAD FLAT PACK (22017194-001)
E
1
b
(width)
D
G
Top
Side
e
(pitch)
H
L
L
Optional
Standoff
Ceramic
Body
A
J
I
0.004
C
X
Optional
Capacitors
N
VDD
VSS
VDD
Y
1
O
V
W
T
P
R
M
All dimensions are in inches [1]
VSS
1
F
NonConductive
Tie-Bar
Kovar
Lid [3]
U
10
S
A
b
C
D
E
e
F
G
H
I
J
L
0.095 ± 0.010
0.008 ± 0.002
0.005 to 0.0075
0.650 ± 0.010
0.630 ± 0.007
0.025 ± 0.002 [2]
0.425 ± 0.005 [2]
0.525 ± 0.005
0.135 ± 0.005
0.030 ± 0.005
0.080 typ.
0.285 ± 0.015
M
N
O
P
R
S
T
U
V
W
X
Y
0.008 ± 0.003
0.050 ± 0.010
0.090 ref
0.015 ref
0.075 ref
0.113 ± 0.010
0.050 ref
0.030 ref
0.080 ref
0.005 ref
0.450 ref
0.400 ref
[1] Parts delivered with leads unformed
[2] At tie bar
[3] Lid tied to VSS
VSS
VDD
NWE
CE
A13
A8
A9
A11
NOE
A10
NCS
DQ7
DQ6
DQ5
DQ4
DQ3
VDD
VSS
HC6856
28-LEAD FLAT PACK (22017362-001)
1
b
(width)
e
S
(pitch)
Z
L
VSS
All dimensions in inches
VDD
1
BOTTOM
VIEW
D
TOP
VIEW
F
Optional capacitors
in cutout
VDD
E
X
U
Y
W
Q
A
G
Kovar
Lid [4]
Cutout
Area
Ceramic
Body
E2
V
C
Lead
Alloy 42
[1]
[2]
[3]
[4]
E3
A
b
C
D
e
E
E2
E3
F
G
L
Q
S
U
V
W
X
Y
Z
0.135 ± 0.015
0.015 ± 0.002
0.004 to 0.009
0.720 ± 0.008
0.050 ± 0.005 [1]
0.530 ± 0.008
0.420 ± 0.008
0.055 ref
0.650 ± 0.005 [2]
0.050 ± 0.005
0.295 min [3]
0.026 to 0.045
0.035 ± 0.010
0.065 ref
0.300 ref
0.050 ref
0.030 ref
0.100 ref
0.080 ref
BSC - Basic lead spacing between centers
Where lead is brazed to package
Parts delivered with leads unformed
Lid connected to VSS
28-LEAD DIP (22017502-001)
For 28-Lead DIP description, see MIL-STD-1835, Type CDIP2-T28, Config. C, Dimensions D-10
F16
F7
F6
F5
F4
F3
F2
F8
F13
F14
F1
F1
F1
R
R
R
R
R
R
R
R
R
R
R
R
R
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
VSS
VDD
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQO
DQ1
DQ2
VDD
VSS
VSS
VDD
NWE*
CE*
A13*
A8
A9
A11
NOE
A10
NCS
DQ7
DQ6
DQ5
DQ4
DQ3
VDD
VSS
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
20
19
STATIC BURN-IN DIAGRAM
VDD
VDD
R
R
R
R
R
R
R
R
R
R
R
R
R
R
VSS
R
F0
F17
F15
F12
F11
F10
F17
F9
F17
F1
F1
F1
F1
F1
R
R
R
R
R
R
R
R
R
R
R
R
NC
VSS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
VSS
VDD
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQO
DQ1
DQ2
VDD
VSS
32K x 8 SRAM
VSS
32K x 8 SRAM
DYNAMIC BURN-IN DIAGRAM
VSS
VDD
NWE*
CE*
A13*
A8
A9
A11
NOE
A10
NCS
DQ7
DQ6
DQ5
DQ4
DQ3
VDD
VSS
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
20
19
R
R
R
R
R
R
R
R
R
R
R
R
R
R
VSS
VDD = 6.5V, R ≤ 10 KΩ, VIH = VDD, VIL = VSS
Ambient Temperature ≥ 125 °C, F0 ≥ 100 KHz Sq Wave
Frequency of F1 = F0/2, F2 = F0/4, F3 = F0/8, etc.
VDD = 5.5V, R ≤ 10 KΩ
Ambient Temperature ≥ 125 °C
NOTE — *Denotes package pinout option dependent (28-Lead DIP/FP diagrams not shown but have similar connections)
11
HC6856
ORDERING INFORMATION (1)
H
6856/1
C
PART NUMBER
Pinout options (2)
PROCESS
C=CMOS
SOURCE
H=HONEYWELL
X
H
Q
SCREEN LEVEL (1)
V=QML Class V
Q=QML Class Q
S=Level S
B=Level B
E=Engr Device (4)
PACKAGE DESIGNATION
W=36-Lead FP
X=36-Lead FP, with standoff
Y=36-Lead FP, with standoff & caps
N=28-Lead FP
R=28-Lead DIP
- = Bare Die (No Package)
Z
SOFT ERROR
RATE
Z=<1x10-10 upsets/bit-day
A=<1x10-9 upsets/bit-day (3)
C=<1x10-7 upsets/bit-day
- =No SER Guaranteed
TOTAL DOSE
HARDNESS
R=1x105rad(SiO2)
F=3x105 rad(SiO2)
H=1x106 rad(SiO2)
N=No Level Guaranteed
40
C
SPEED (5)
60 ns
40 ns
35 ns
INPUT BUFFER TYPE
C=CMOS Level
T=TTL Level
(1) Orders may be faxed to 612-954-2051. Please contact our Customer Logistics Department at 612-954-2888 for further information.
(2) Pinout options:
36-Lead FP
28-Lead FP & DIP
pin 32 pin 33
pin 34
HC6856/1
A13
CE
NWE
JEDEC Pinout
HC6856/2
CE
NWE
A13
N/A
(3) SER <1E-10 u/b-d from -55 to 80°C.
(4) Engineering Device description: Parameters are tested from -55 to 125°C, 24 hr burn-in, no radiation guaranteed.
(5) Only specified for Engineering Devices. Number defines worst case maximum Write Cycle time in nano-seconds (ns).
Contact Factory with other needs.
To learn more about Honeywell Solid State Electronics Center,
visit our web site at http://www.ssec.honeywell.com
Honeywell reserves the right to make changes to any products or technology herein to improve reliability, function or design. Honeywell does not assume any liability
arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights nor the rights of others.
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