Diodes BSS138W N-channel enhancement mode field effect transistor Datasheet

BSS138W
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
•
•
•
•
•
•
Mechanical Data
•
•
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Lead Free/RoHS Compliant (Note 4)
"Green" Device (Note 5 and 6)
Case: SOT-323
Case Material: Molded Plastic, "Green" Molding Compound,
Note 6. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.006 grams (approximate)
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•
•
•
•
•
•
Drain
SOT-323
D
Gate
G
TOP VIEW
S
Source
Equivalent Circuit
Maximum Ratings
@TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Drain-Gate Voltage (Note 1)
Gate-Source Voltage
Drain Current (Note 2)
Thermal Characteristics
Symbol
VDSS
VDGR
VGSS
ID
Continuous
Continuous
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 3)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
1.
2.
3.
4.
5.
6.
Value
50
50
±20
200
Units
V
V
V
mA
Value
200
625
-55 to +150
Units
mW
°C/W
°C
@TA = 25°C unless otherwise specified
Characteristic
Total Power Dissipation (Note 2)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Notes:
TOP VIEW
Symbol
Pd
RθJA
Tj, TSTG
@TA = 25°C unless otherwise specified
Symbol
Min
Typ
Max
Unit
Test Condition
BVDSS
IDSS
IGSS
50
⎯
⎯
75
⎯
⎯
⎯
0.5
±100
V
µA
nA
VGS = 0V, ID = 250μA
VDS = 50V, VGS = 0V
VGS = ±20V, VDS = 0V
VGS(th)
RDS (ON)
gFS
0.5
⎯
100
1.2
1.4
⎯
1.5
3.5
⎯
V
Ω
mS
VDS = VGS, ID = 250μA
VGS = 10V, ID = 0.22A
VDS = 25V, ID = 0.2A, f = 1.0KHz
Ciss
Coss
Crss
⎯
⎯
⎯
⎯
⎯
⎯
50
25
8.0
pF
pF
pF
VDS = 10V, VGS = 0V, f = 1.0MHz
tD(ON)
tD(OFF)
⎯
⎯
⎯
⎯
20
20
ns
ns
VDD = 30V, ID = 0.2A,
RGEN = 50Ω
RGS ≤ 20KΩ.
Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
Short duration pulse test used to minimize self-heating effect.
No purposefully added lead.
Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
BSS138W
Document number: DS30206 Rev. 9 - 2
1 of 4
www.diodes.com
October 2007
© Diodes Incorporated
BSS138W
0.6
0.8
0.5
0.4
0.3
0.2
0.1
0
0
0.7
0.5
0.3
0.2
0.1
0
0
1
VGS(th), GATE THRESHOLD VOLTAGE (V)
2.05
1.85
VGS = 10V
ID = 0.5A
1.65
1.45
1.25
VGS = 4.5V
1.05
ID = 0.075A
0.85
4.5
1.8
1.6
1.2
1
0.8
0.6
0.4
0.2
0
-55
45
145
-5
95
Tj, JUNCTION TEMPERATURE (°C)
Fig. 3 Drain-Source On Resistance vs. Junction Temperature
-25
5
35
65
95
125 155
Tj, JUNCTION TEMPERATURE (°C)
Fig. 4 Gate Threshold Voltage vs. Junction Temperature
8
9
150° C
VGS = 2.5V
3
-55°C
2
1
150°C
7
ON RESISTANCE (Ω)
RDS(ON), STATIC DRAIN-SOURCE
25° C
4
0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16
ID, DRAIN CURRENT (A)
Fig. 5 Drain-Source On Resistance vs. Drain Current
Document number: DS30206 Rev. 9 - 2
6
5
25°C
4
3
-55°C
2
1
0
0
BSS138W
VGS = 2.75V
8
6
5
ID = 1.0mA
1.4
0.65
-55
ON RESISTANCE (Ω)
2.5
0.5 1
1.5
2
3 3.5 4
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Transfer Characteristics
2
2.25
ON RESISTANCE (Ω)
RDS(ON), NORMALIZED DRAIN-SOURCE
150°C
0.4
2.45
RDS(ON), STATIC DRAIN-SOURCE
25°C
0.6
5
6
9 10
2
3
4
7
8
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Drain-Source Current vs. Drain-Source Voltage
7
-55°C
VDS = 1V
ID, DRAIN-SOURCE CURRENT (A)
ID, DRAIN-SOURCE CURRENT (A)
Tj = 25°C
2 of 4
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0
0.1
0.15
0.25
0.2
ID, DRAIN CURRENT (A)
Fig. 6 Drain-Source On Resistance vs. Drain Current
0
0.05
October 2007
© Diodes Incorporated
BSS138W
3.5
6
VGS = 10V
VGS = 4.5V
4
3
25°C
2
-55°C
1
150°C
3
ON RESISTANCE (Ω)
RDS(ON), STATIC DRAIN-SOURCE
5
ON RESISTANCE (Ω)
RDS(ON), STATIC DRAIN-SOURCE
150°C
2.5
2
25°C
1.5
1
-55°C
0.5
0
0
0
0.1
0.2
0.3
0.4
0.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 7 Drain-Source On Resistance vs. Drain Current
0.3
0.4
0.5
0.2
ID, DRAIN CURRENT (A)
Fig. 8 Drain-Source On Resistance vs. Drain Current
0.1
0
100
1
VGS = 0V
f = 1MHz
C, CAPACITANCE (pF)
ID, DIODE CURRENT (A)
Ciss
150°C
0.1
-55 °C
25°C
0.01
10
Crss
1
0
0.001
0
0.2
0.4
0.8
1
1.2
0.6
VSD, DIODE FORWARD VOLTAGE (V)
Fig. 9 Body Diode Current vs. Body Diode Voltage
Ordering Information
30
5
10
15
20
25
VDS, DRAIN SOURCE VOLTAGE (V)
Fig. 10 Capacitance vs. Drain Source Voltage
(Note 6 & 7)
Part Number
BSS138W -7-F
Notes:
Coss
Case
SOT-323
Packaging
3000/Tape & Reel
7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
YM
Marking Information
K38
Date Code Key
Year
Code
1998
J
1999
K
2000
L
2001
M
2002
N
K38 = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
2003
P
2004
R
2005
S
2006
T
2007
U
2008
V
2009
W
2010
X
2011
Y
2012
Z
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
BSS138W
Document number: DS30206 Rev. 9 - 2
3 of 4
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October 2007
© Diodes Incorporated
BSS138W
Package Outline Dimensions
A
SOT-323
Dim
Min
Max
A
0.25
0.40
B
1.15
1.35
C
2.00
2.20
D
0.65 Nominal
F
0.30
0.40
G
1.20
1.40
H
1.80
2.20
J
0.0
0.10
K
0.90
1.00
L
0.25
0.40
M
0.10
0.18
0°
8°
α
All Dimensions in mm
B C
TOP VIEW
G
H
K
M
J
D
L
F
Suggested Pad Layout
Y
Z
G
C
X
Dimensions Value (in mm)
Z
2.8
G
1.0
X
0.7
Y
0.9
C
1.9
E
0.65
E
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
BSS138W
Document number: DS30206 Rev. 9 - 2
4 of 4
www.diodes.com
October 2007
© Diodes Incorporated
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