MCR218−6FP, MCR218−10FP Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits. • Glass Passivated Junctions with Center Gate Fire for Greater Parameter Uniformity and Stability • Small, Rugged, Thermowatt Constructed for Low Thermal Resistance, High Heat Dissipation and Durability • Blocking Voltage to 800 Volts • 80 A Surge Current Capability • Insulated Package Simplifies Mounting • Indicates UL Registered — File #E69369 • Device Marking: Logo, Device Type, e.g., MCR218−6, Date Code http://onsemi.com ISOLATED SCRs ( 8 AMPERES RMS 400 thru 800 VOLTS ) G A K MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Rating Voltage(1) Value Unit Peak Repetitive Off−State (TJ = −40 to +125°C, Sine Wave 50 to 60 Hz, Gate Open) MCR218−6FP MCR218−10FP VDRM, VRRM On-State RMS Current (TC = +70°C)(2) (180° Conduction Angles) IT(RMS) 8.0 Amps ITSM 100 Amps Peak Nonrepetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, TJ = 125°C) Circuit Fusing (t = 8.3 ms) Forward Peak Gate Power (TC = +70°C, Pulse Width v 1.0 μs) Forward Average Gate Power (TC = +70°C, t = 8.3 ms) Forward Peak Gate Current (TC = +70°C, Pulse Width v 1.0 μs) RMS Isolation Voltage (TA = 25°C, Relative Humidity p 20%) ( ) Volts 400 800 I2t 26 A2s PGM 5.0 Watts PG(AV) 0.5 Watt IGM 2.0 Amps V(ISO) 1500 Volts Operating Junction Temperature TJ −40 to +125 °C Storage Temperature Range Tstg −40 to +150 °C (1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. (2) The case temperature reference point for all TC measurements is a point on the center lead of the package as close as possible to the plastic body. © Semiconductor Components Industries, LLC, 2006 August, 2006 − Rev. 3 1 1 2 3 ISOLATED TO−220 Full Pack CASE 221C STYLE 2 PIN ASSIGNMENT 1 Cathode 2 Anode 3 Gate ORDERING INFORMATION Device Package Shipping MCR218−6FP ISOLATED TO220FP 500/Box MCR218−10FP ISOLATED TO220FP 500/Box Preferred devices are recommended choices for future use and best overall value. Publication Order Number: MCR218FP/D MCR218−6FP, MCR218−10FP THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 2 °C/W Thermal Resistance, Case to Sink RθCS 2.2 (typ) °C/W Thermal Resistance, Junction to Ambient RθJA 60 °C/W TL 260 °C Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit — — — — 10 2 μA mA OFF CHARACTERISTICS Peak Repetitive Forward or Reverse Blocking Current (VD = Rated VDRM, Gate Open) TJ = 25°C TJ = 125°C IDRM, IRRM ON CHARACTERISTICS Peak Forward On−State Voltage(1) (ITM = 16 A Peak) VTM — 1 1.8 Volts Gate Trigger Current (Continuous dc) (VAK = 12 Vdc, RL = 100 Ohms) IGT — 10 25 mA Gate Trigger Voltage (Continuous dc) (VAK = 12 Vdc, RL = 100 Ohms) VGT — — 1.5 Volts Gate Non-Trigger Voltage (VAK = 12 Vdc, RL = 100 Ohms, TJ = 125°C) VGD 0.2 — — Volts Holding Current (VAK = 12 Vdc, Initiating Current = 200 mA, Gate Open) IH — 16 30 mA Turn-On Time (ITM = 8 A, IGT = 40 mAdc) tgt — 1.5 — μs — — 15 35 — — — 100 — Turn-Off Time (VD = Rated VDRM, ITM = 8 A, IR = 8 A) tq TJ = 25°C TJ = 125°C μs DYNAMIC CHARACTERISTICS Critical Rate-of-Rise of Off-State Voltage (Gate Open, VD = Rated VDRM, Exponential Waveform) dv/dt (1) Pulse Test: Pulse Width = 1 ms, Duty Cycle p 2%. http://onsemi.com 2 V/μs MCR218−6FP, MCR218−10FP Voltage Current Characteristic of SCR + Current Symbol Parameter VDRM Peak Repetitive Off State Forward Voltage IDRM Peak Forward Blocking Current VRRM Peak Repetitive Off State Reverse Voltage IRRM Peak Reverse Blocking Current VTM Peak on State Voltage IH Holding Current Anode + VTM on state IH IRRM at VRRM Reverse Blocking Region (off state) Reverse Avalanche Region + Voltage IDRM at VDRM Forward Blocking Region (off state) P(AV) , AVERAGE ON-STATE POWER DISSIPATION (WATTS) TC , MAXIMUM ALLOWABLE CASE TEMPERATURE ( °C) Anode − 125 115 a α = CONDUCTION ANGLE 105 95 dc 85 75 α = 30° 0 1 60° 2 90° 120° 3 4 180° 5 6 7 8 15 12 a α = CONDUCTION ANGLE 9 120° 60° 6 dc 180° 90° α = 30° 3 0 0 IT(AV), AVERAGE ON-STATE FORWARD CURRENT (AMPS) 1 2 3 4 5 6 7 IT(AV), AVG. ON-STATE CURRENT (AMPS) Figure 2. On-State Power Dissipation Figure 1. Current Derating http://onsemi.com 3 8 MCR218−6FP, MCR218−10FP 100 70 TJ = 25°C 50 125°C 20 10 7 5 3 2 80 I TSM , PEAK SURGE CURRENT (AMP) iF , INSTANTANEOUS ON-STATE FORWARD CURRENT (AMP) 30 1 0.7 0.5 0.3 0.2 0.1 0.4 1.2 2 2.8 3.6 4.4 5.2 75 70 65 TC = 85°C f = 60 Hz 60 SURGE IS PRECEDED AND FOLLOWED BY RATED CURRENT 55 6 2 1 v F, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) 3 4 6 8 10 NUMBER OF CYCLES Figure 3. Maximum On-State Characteristics r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1 CYCLE Figure 4. Maximum Non-Repetitive Surge Current 1 0.7 0.5 0.3 0.2 ZθJC(t) = RθJC • r(t) 0.1 0.07 0.05 0.03 0.02 0.01 0.1 0.2 0.3 0.5 1 2 3 5 10 20 30 50 t, TIME (ms) 100 Figure 5. Thermal Response http://onsemi.com 4 200 300 500 1.0 k 2.0 k 3.0 k 5.0 k 10 k VGT , GATE TRIGGER VOLTAGE (NORMALIZED) I GT, GATE TRIGGER CURRENT (NORMALIZED) MCR218−6FP, MCR218−10FP 2 VD = 12 V 1.6 1.2 0.8 0.4 −40 −20 0 20 40 60 80 100 120 140 VD = 12 V 1.6 1.2 0.8 0.4 0 −60 −40 −20 TJ, JUNCTION TEMPERATURE (°C) 0 20 VD = 12 V 1.6 1.2 0.8 0.4 −40 60 80 100 120 Figure 7. Typical Gate Trigger Voltage versus Temperature 2 0 −60 40 TJ, JUNCTION TEMPERATURE (°C) Figure 6. Typical Gate Trigger Current versus Temperature IH , HOLDING CURRENT (NORMALIZED) 0 −60 2 −20 0 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (°C) Figure 8. Typical Holding Current versus Temperature http://onsemi.com 5 140 MCR218−6FP, MCR218−10FP PACKAGE DIMENSIONS ISOLATED TO−220 Full Pack CASE 221C−02 ISSUE C −T− −B− F C P N SEATING PLANE S E A Q H 1 2 3 −Y− K Z J L R G D 3 PL 0.25 (0.010) M B M Y NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. LEAD DIMENSIONS UNCONTROLLED WITHIN DIMENSION Z. DIM A B C D E F G H J K L N P Q R S Z INCHES MIN MAX 0.680 0.700 0.388 0.408 0.175 0.195 0.025 0.040 0.340 0.355 0.140 0.150 0.100 BSC 0.110 0.155 0.018 0.028 0.500 0.550 0.045 0.070 0.049 −−− 0.270 0.290 0.480 0.500 0.090 0.120 0.105 0.115 0.070 0.090 MILLIMETERS MIN MAX 17.28 17.78 9.86 10.36 4.45 4.95 0.64 1.01 8.64 9.01 3.56 3.81 2.54 BSC 2.80 3.93 0.46 0.71 12.70 13.97 1.15 1.77 1.25 −−− 6.86 7.36 12.20 12.70 2.29 3.04 2.67 2.92 1.78 2.28 STYLE 2: PIN 1. CATHODE 2. ANODE 3. GATE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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